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| Number | Title | Issue Date |
| 5812363 | Multilayer capacitor including a dielectric breakdown prevention layer A multilayer capacitor capable of having reducing electrical field intensity at external electrode edges while preventing occurrence of surface dielectric breakdown. This multilayer capacitor has a capacitor main body which includes a capacitance formatio... | 09/22/1998 |
| 5812364 | Capacitor An MIM capacitor includes a lower electrode; a first insulating film disposed on the lower electrode; a second insulating film disposed on the first insulating film and having a first opening exposing a portion of the surface of the first insulating film ... | 09/22/1998 |
| 5808855 | Stacked container capacitor using chemical mechanical polishing A method for forming a stacked container capacitor for use within integrated circuits. Formed successively upon a semiconductor substrate is a first dielectric layer, a second dielectric layer and a patterned mask layer. Within an isotropic etch process, ... | 09/15/1998 |
| 5801916 | Pre-patterned contact fill capacitor for dielectric etch protection Disclosed is a capacitor incorporating a material having a high dielectric constant. In a preferred embodiment, the bottom electrode is first deposited and patterned. An insulating diffusion barrier, such as LPCVD silicon nitride, is deposited over the bo... | 09/01/1998 |
| 5799379 | Method of manufacturing a decoupling capacitor structure A capacitor structure is described as having a plurality of dielectric materials located so that each dielectric material is in parallel between capacitor plates. The capacitor value of this structure is preset, therefore, for operation electrically at di... | 09/01/1998 |
| 5798903 | Electrode structure for ferroelectric capacitor integrated on silicon A ferroelectric capacitor structure and its method of making in which a ferroelectric stack of two metal-oxide electrodes sandwiching a ferroelectric layer is fabricated on a silicon substrate with an intervening barrier layer, preferably of TiN. In one e... | 08/25/1998 |
| 5796573 | Overhanging separator for self-defining stacked capacitor An overhanging separator structure with a post projecting from a surface which may be a substrate, an underlying layer on the surface, and a separator layer on the underlying layer, with the separator layer overhanging the underlying layer. A discontinuou... | 08/18/1998 |
| 5757612 | Structure and fabrication method for non-planar memory elements Structures for memory cell applications, including capacitors for DRAM and ferroelectric memory cells from FRAM, whose method of manufacture consists of depositing a ferroelectric or high-epsilon dielectric material to completely fill a cavity whose geome... | 05/26/1998 |
| 5745334 | Capacitor formed within printed circuit board A multi-layer printed circuit board comprises a first metallic layer, a first Ta or Hf layer on one face of the first metallic layer, a first layer of Ta2 O5 or HfO on a face of the Ta or Hf layer opposite the first metallic layer, a... | 04/28/1998 |
| 5742471 | Nanostructure multilayer dielectric materials for capacitors and insulators A capacitor is formed of at least two metal conductors having a multilayer dielectric and opposite dielectric-conductor interface layers in between. The multilayer dielectric includes many alternating layers of amorphous zirconium oxide (ZrO2) ... | 04/21/1998 |
| 5740010 | Printing and adhering patterned metal on laid-up multi-layer green wafer before firing so as to later form precise integral co-fired conductive traces and pads on top and bottom surfaces of monolithic, buried-substrate, capacitors Metal, normally gold or platinum, is printed, and is adhered by a glass frit, on the top and/or bottom surfaces of a multi-layer laid-up green ceramic wafers containing typically up to 16 layers and 800+ separate devices, typically 800+ monolithic, buried... | 04/14/1998 |
| 5737179 | Metallized film capacitor Sheet capacitive materials for use in forming a thin-film capacitor comprise an electrically nonconductive substrate, a layer of electrically conductive material disposed a surface of the substrate, and a layer of electrically nonconductive material dispo... | 04/07/1998 |
| 5729424 | Autogenous electrolyte, non-pyrolytically produced solid capacitor structure A solid electrolytic capacitor having a solid electrolyte comprising manganese dioxide dispersed in an aromatic polyamide capable of further cure to form polyimide linkages, the solid electrolyte being disposed between a first electrode made of valve meta... | 03/17/1998 |
| 5636100 | Capacitor having an enhanced dielectric breakdown strength A capacitor having an enhanced dielectric breakdown strength is obtained m a base dielectric film by coating the base dielectric film on both sides with an adherent coated dielectric film having a dielectric constant that is at least 50 percent higher th... | 06/03/1997 |
| 5631804 | Contact fill capacitor having a sidewall that connects the upper and lower surfaces of the dielectric and partially surrounds an insulating layer Disclosed is a capacitor incorporating a material having a high dielectric constant and a method of fabricating the same. In a preferred embodiment, the bottom electrode is first deposited and patterned. A thick, planarized insulating layer is deposited o... | 05/20/1997 |
| 5625528 | Monolithic, buried-substrate, ceramic multiple capacitors isolated, one to the next, by dual-dielectric-constant, three-layer-laminate isolation layers A monolithic, buried-substrate, ceramic multiple capacitor is laid up as multiple capacitors that are isolated, one to the next, by a dual-dielectric-constant, three-layer-laminate, isolation layer. Each isolation layer has and presents (i) an innermost l... | 04/29/1997 |
| 5619393 | High-dielectric-constant material electrodes comprising thin ruthenium dioxide layers A preferred embodiment of this invention comprises a thin unreactive film (e.g. ruthenium dioxide 36) contacting a high-dielectric-constant material (e.g. barium strontium titanate 38) to an electrode. The thin unreactive film provides a stable conductive... | 04/08/1997 |
| 5615078 | Metallized film for electrical capacitors having a semiconductive layer extending entirely across the unmetallized margin A film capacitor in which the unmetallized margin is provided with a semiconductive layer. The layer provides a parallel resistive path within the capacitor, itself, obviating the need for an external resistor. It also grades the electric field across the... | 03/25/1997 |
| 5606486 | Capacitor employing plural materials for dielectric A capacitor employing plural dielectric materials between oppositely facing, distinctly electrically connected plates, or employing interspersed plural dielectric materials outside the space between oppositely facing, distinctly electrically connected pla... | 02/25/1997 |
| 5583738 | Capacitor array A capacitor array in which a plurality of inner electrodes are formed so as to be overlapped with each other in the thickness direction while being separated by a ceramic layer in a ceramic sintered body to construct a plurality of capacitor units, and th... | 12/10/1996 |
| 5583739 | Capacitor fabricated on a substrate containing electronic circuitry An on-chip decoupling capacitor is disclosed. The capacitor of the present invention is fabricated using an embedded conductive layered structure. A first insulative layer, a first conductive layer, a second insulative layer, a second conductive layer, an... | 12/10/1996 |
| 5581435 | Polyester film capacitor element A film capacitor element produced from a metallized polyester film is described. In the metallized polyester film, the adhesion between a vapor-deposited metal layer and a polyester substrate is improved by providing a coating layer comprising a specific ... | 12/03/1996 |
| 5576926 | Capacitor with buried isolated electrode A capacitor includes a planar electrode layer which is mounted between a pair of dielectric layers. The electrode layer generally is centered inwardly with respect to the dielectric layers leaving an outward margin of dielectric material. One of the diele... | 11/19/1996 |
| 5576928 | High-dielectric-constant material electrodes comprising thin platinum layers A preferred embodiment of this invention comprises a thin unreactive film (e.g. platinum 36) contacting a high-dielectric-constant material (e.g. barium strontium titanate 38) to an electrode. The thin unreactive film provides a stable conductive interfac... | 11/19/1996 |
| 5576925 | Flexible multilayer thin film capacitors A flexible, multilayer thin film capacitor comprises a flexible substrate and at least two electrode layers mounted on the substrate alternately with at least one dielectric layer. The dielectric layer may include amorphous hydrogenated carbon. The at lea... | 11/19/1996 |
| 5572052 | Electronic device using zirconate titanate and barium titanate ferroelectrics in insulating layer In an electronic device using lead zirconate titanate (PZT) or lanthanum lead zirconate titanate (PLZT) as the main insulating material, a PZT film or a PLZT film is formed on a sub-insulating layer consisting essentially of lead titanate, lanthanum lead ... | 11/05/1996 |
| 5566045 | High-dielectric-constant material electrodes comprising thin platinum layers A preferred embodiment of this invention comprises a thin unreactive film (e.g. platinum 36) contacting a high-dielectric-constant material (e.g. barium strontium titanate 38) to an electrode. The thin unreactive film provides a stable conductive interfac... | 10/15/1996 |
| 5563762 | Capacitor for an integrated circuit and method of formation thereof, and a method of adding on-chip capacitors to an integrated circuit A capacitor structure and method of forming a capacitor structure for an integrated circuit is provided. The capacitor structure, comprising a bottom electrode, capacitor dielectric and top electrode, is formed on a passivation layer overlying the interco... | 10/08/1996 |
| 5541807 | Ferroelectric based capacitor for use in memory systems and method for fabricating the same A ferroelectric based capacitor structure and method for making the same. The capacitor includes a bottom electrode having a layer of Pt in contact with a first layer of an ohmic material. The capacitor dielectric is constructed from a layer of lead zirco... | 07/30/1996 |
| 5539613 | Compact semiconductor device including a thin film capacitor of high reliability In a semiconductor device which has a substrate, at least one thin film capacitor having a lower electrode layer deposited on the substrate, a dielectric layer overlaid on the lower electrode layer, and an upper electrode layer stacked on the dielectric l... | 07/23/1996 |
| 5517385 | Decoupling capacitor structure A capacitor structure is described as having a plurality of dielectric materials located so that each dielectric material is in parallel between capacitor plates. The capacitor value of this structure is preset, therefore, for operation electrically at di... | 05/14/1996 |
| 5498890 | Semiconductor device having a multi-layered dielectric structure and manufacturing method thereof A semiconductor device and a manufacturing method thereof are disclpsed, the semiconductor device comprising: a first conductive layer; an oxide layer formed upon the first conductive layer; a nitride layer composed of multiple sublayers formed upon the o... | 03/12/1996 |
| 5448445 | Three-terminal capacitor and assembly A reduced size three-terminal type capacitor for removing jamming signals from an electrical signal. The three-terminal type capacitor comprises a ceramic substrate with a first ground electrode layer formed on the ceramic substrate, and a first dielectri... | 09/05/1995 |
| 5170233 | Method for increasing capacitive surface area of a conductive material in semiconductor processing and stacked memory cell capacitor A method of fabricating a semiconductor wafer comprises providing an electrically conductive area on a semiconductor wafer. Multiple alternating layers of first and second materials are provided atop the wafer. The first and second materials need be selec... | 12/08/1992 |
| 5150086 | Filter and electrical connector with filter An electrical filter connector comprises a metal shell (10,18) in which is secured a dielectric housing (8) having electrical contacts (6,6',6") secured therein, a filter member (30,50,70) electrically connected to the metal shell and having a plate membe... | 09/22/1992 |
| 4791391 | Planar filter connector having thick film capacitors A filter connector for attentuating electromagnetic interference up to 1000 MHz having a housing, a filter element enclosed within the housing and electrically conductive pins mounted within the filter element. The filter element contains an alumina subst... | 12/13/1988 |
| 4782310 | High frequency filter assembly for electric instrument A high frequency filter assembly for an electric instrument including an internal electric circuit element arranged within a casing of metallic conductive material, and a connector mounted on a peripheral wall of the casing for connecting an external elec... | 11/01/1988 |
| 4682129 | Thick film planar filter connector having separate ground plane shield A filter connector for attenuating frequencies up to 1000 MHz having a conductive housing enclosing a planar filter element. Rows of conductive pins and associated capacitors are mounted on the filter element and there is a ground plane over one or both s... | 07/21/1987 |
| 4654249 | Biaxially drawn, filled polyester film substrates Biaxially drawn, filled polyester film substrates, well adapted for the manufacture of magnetic recording tapes, are comprised of a biaxially stretched thermoplastic film matrix including a particulate filler material distributed therethrough, said filler... | 03/31/1987 |
| 4156268 | Humidity sensing element and method of manufacture thereof A doped capacitance humidity sensing element and method of manufacture thereof is provided. The element has a response time in the order of one second and has one electrode formed by an anodizable metal, an anodized layer thereon, conductive, metal atoms ... | 05/22/1979 |
