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Class 361/311 - Solid dielectric


Subclass of Class 361 - Electricity: electrical systems and devices
Definition: Subject matter under subclasses 301.1+ wherein
No. of patents: 809
Last issue date: 05/22/2012


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NumberTitleIssue Date
6985350Dielectric composition on the basis of barium titanate
The invention relates to the dielectric composition on the basis of barium titanate (BaTiO3) that is present with Ba(Zn1/3Nb2/3)O3 in a perovslite structure, which dielectric composition exhibits an average grain size d
01/10/2006
6982864Copper termination inks containing lead free and cadmium free glasses for capacitors
Lead-free and cadmium-free glass composition that is particularly suitable for use in conductive ink applications. The invention includes a capacitor comprising a copper termination, the copper termination is made by firing an ink including a glass component, the gl...
01/03/2006
6980413Thin film multi-layered ceramic capacitor and method of manufacturing the same
The present invention provides a thin film type multi-layered ceramic capacitor including a stacked body composed of a plurality of capacitor layers. Each of the capacitor layers comprises a substrate having an upper surface where a plurality of holes are formed and...
12/27/2005
6980414Capacitor structure in a semiconductor device
A capacitor structure is provided that includes a substrate, a first group of conducting strips, a second group of conducting strips, a third group of conducting strips, and a fourth group of conducting strips. The capacitor structure can further include a first set...
12/27/2005
6979486Multilayer ceramic capacitor
A multilayer ceramic capacitor includes ceramic layers made of a dielectric material, and internal electrodes made of a conductive material. The internal electrodes are provided with cavities which have an average size ranging from about 1.0 μm to about 10 μm and ...
12/27/2005
6977806Multi-layered unit including electrode and dielectric layer
A multi-layered unit according to the present invention includes a support substrate formed of platinum (Pt), a buffer layer formed on the support substrate and formed of a dielectric material containing a bismuth layer structured compound having an excellent orient...
12/20/2005
6977805Capacitor element, semiconductor integrated circuit and method of manufacturing those
A dielectric layer is formed on a first metal layer, the dielectric layer is formed with many concave portions at the upper surface. A second metal layer is formed on the dielectric layer, the second metal layer is formed with a convex portion at a position correspo...
12/20/2005
6975501Electronic device and method of applying voltage to capacitor
An electronic device comprises a silicon substrate (base material), an underlying insulating film formed on the silicon substrate, a capacitor constructed by forming a bottom electrode, a capacitor dielectric film, and a top electrode sequentially on the underlying ...
12/13/2005
6975502Multilayer ceramic capacitor
A multilayer ceramic capacitor including an internal electrode layer, an internal dielectric layer having a thickness of less than 2 μm, and an external dielectric layer is provided, wherein the internal dielectric layer and external dielectric layer contain a plur...
12/13/2005
6972942Plated terminations
Improved termination features for multilayer electronic components are disclosed. Monolithic components are provided with plated terminations whereby the need for typical thick-film termination stripes is eliminated or greatly simplified. Such termination technology...
12/06/2005
6972060Method for producing stacked ceramic body
This invention provides a method for producing a stacked ceramic body that does not require strict control of an oxygen partial pressure in a sintering gas. To produce a stacked ceramic body by alternately stacking dielectric layer and electrode layers, an unsintere...
12/06/2005
6970342Multilayer capacitor
A multilayer capacitor configured of internal electrodes, each of which has a similar shape that is continuous and has a pair of parallel parts extending parallel to one another. First and second ends of each internal electrode are formed at different positions from...
11/29/2005
6970341Integrated broadband ceramic capacitor array
A monolithic capacitor structure includes opposed and overlapping plates within a dielectric body, which are arranged to form a lower frequency, higher value capacitor. Other conductive structure is located either inside the dielectric body or on an external surface...
11/29/2005
6970362Electronic assemblies and systems comprising interposer with embedded capacitors
To reduce switching noise, the power supply terminals of an integrated circuit die are coupled to the respective terminals of at least one capacitor embedded in an interposer that lies between the die and a substrate. In an embodiment, the interposer is a multilayer...
11/29/2005
6967827Laminated capacitor
A laminated capacitor includes a first capacitor element having a capacitance component provided by capacitance forming portions, facing each other, and an inductance component provided by the current pass between lead-out portions, a second capacitance element havi...
11/22/2005
6967540Synthesizers incorporating parascan TM varactors
A synthesizer incorporating voltage tunable capacitors, comprising at least one resonator coupled into a base circuit of a bipolar transistor, the at least one resonator including at least one voltage tunable capacitor; the bipolar transistor including a collector w...
11/22/2005
6967135Method of forming capacitor of semiconductor device
Disclosed is a method of forming a capacitor of a semiconductor device which can secure a desired leakage current characteristic while securing a desired charging capacitance. The inventive method of forming a capacitor of a semiconductor device comprises steps of: ...
11/22/2005
6964908Metal-insulator-metal capacitor and method of fabricating same
A metal-insulator-metal (MIM) capacitor including a metal layer, an insulating layer formed on the metal layer, at least a first opening and at least a second opening formed in the first insulating layer, a dielectric layer formed in the first opening, a conductive ...
11/15/2005
6962613Low-temperature fabrication of thin-film energy-storage devices
A method and system for fabricating solid-state energy-storage devices including fabrication films for devices without an anneal step, especially a cathode anneal of thin-film batteries. A film of an energy-storage device is fabricated by depositing a first material...
11/08/2005
6962888Dielectric ceramic composition and electronic device
A dielectric ceramic composition comprising a main component including a dielectric oxide expressed by a composition formula {(Ca1-xMex)O}m.(Zr1-yTiy)O2, and a first subcomponent including at least on...
11/08/2005
6961231Interposer providing low-inductance decoupling capacitance for a packaged integrated circuit
Structures that provide decoupling capacitance to packaged IC devices with reduced capacitor and via parasitic inductance. A capacitive interposer structure is physically interposed between the packaged IC and the PCB, thus eliminating the leads and vias that traver...
11/01/2005
6960546Dielectric composite materials including an electronically tunable dielectric phase and a calcium and oxygen-containing compound phase
Dielectric composite materials including an electronically tunable dielectric phase and a calcium and oxygen-containing compound are disclosed. The tunable phase may comprise a material such as barium strontium titanate. The calcium/oxygen compound may comprise CaO ...
11/01/2005
6958900Multi-layered unit including electrode and dielectric layer
A multi-layered unit according to the present invention includes a support substrate formed of fused quartz, an electrode layer formed on the support substrate and formed of a conductive material, a buffer layer formed on the electrode layer and formed of a dielectr...
10/25/2005
6956730Multilayer capacitor
A multilayer capacitor includes: a dielectric element; two kinds of terminal internal conductors and two kinds of connecting internal conductors both disposed in the dielectric element; two kinds of terminal electrodes; and two kinds of external electrodes, wherein:...
10/18/2005
6955960Decoupling capacitor for high frequency noise immunity
Systems and methods are provided for an on-chip decoupling device and method. One aspect of the present subject matter is a capacitor. One embodiment of the capacitor includes a substrate, a high K dielectric layer doped with nano crystals disposed on the substrate,...
10/18/2005
6956729Capacitor element and production thereof
A capacitor element includes a lower electrode, a ferroelectric film, and an upper electrode that are formed on a substrate. In the capacitor element, the ferroelectric film is formed by a reaction rate-determining method, and the lower electrode has a thickness of ...
10/18/2005
6953721Methods of forming a capacitor with an amorphous and a crystalline high K capacitor dielectric region
The invention comprises integrated circuitry and to methods of forming capacitors. In one implementation, integrated circuitry includes a capacitor having a first capacitor electrode, a second capacitor electrode and a high K capacitor dielectric region received the...
10/11/2005
6954118Voltage tunable coplanar phase shifters with a conductive dome structure
A phase shifter includes a substrate, a tunable dielectric film having a dielectric constant between 70 to 600, a tuning range of 20 to 60%, and a loss tangent between 0.008 to 0.03 at K and Ka bands positioned on a surface of the substrate, a coplanar waveguide pos...
10/11/2005
6954349Metallized film capacitor
A metallized film capacitor is made by winding or laminating a both-side metallized polypropylene (PP) film and a non-metallized PP film. Limiting the heat shrinkage factor and the thickness of the PP films, the position of deposited electrodes, and the rate of the ...
10/11/2005
6952364Magnetic tunnel junction structures and methods of fabrication
A method for forming an MTJ structure suitable for use in a MRAM device having a bottom electrode including a layer of platinum, ruthenium, iridium, rhodium, osmium, palladium or their oxides and having reduced surface roughness to improve the hysteresis loop charac...
10/04/2005
6949421Method of forming a vertical MOS transistor
A vertical MOS transistor has a very short channel length that is indirectly defined by the thickness of a layer of semiconductor material or the depths of implants. The transistor has a first (source/drain) region formed in a substrate material, a semiconductor reg...
09/27/2005
6949982Voltage controlled oscillators incorporating parascan R varactors
A voltage controlled oscillator incorporating voltage tunable capactiors, comprising at least one resonator coupled into a base circuit of a bipolar transistor, said at least one resonator including at least one voltage tunable capacitor. The bipolar transistor incl...
09/27/2005
6950300Ultra low inductance multi layer ceramic capacitor
A multilayer capacitor having a low parasitic inductance includes a first electrode, a second electrode, a dielectric, a first contact, and a second contact. The first electrode is substantially rectangular and it includes a first contact finger. The dielectric has ...
09/27/2005
6946357Conductive container structures having a dielectric cap
Container structures for use in integrated circuits and methods of their manufacture. The container structures have a dielectric cap on the top of a conductive container to reduce the risk of container-to-container shorting by insulating against bridging of conducti...
09/20/2005
6947275Fin capacitor
Disclosed is a capacitor structure and method for forming the same. This structure has a conductive substrate, conductive fins extending above the substrate, and trenches extending into the substrate. These trenches are positioned between locations where the fins ex...
09/20/2005
6947276Process for producing laminated ceramic capacitor
The present invention relates to a method of manufacturing a multilayer ceramic capacitor, having the steps of: (a) alternately layering internal electrodes and ceramic green sheets containing a ceramic material having barium titanate to form a laminated body; (b) s...
09/20/2005
6944008Charge dissipation in electrostatically driven devices
A charge-dissipation structure is formed within the dielectric of an electrostatically driven device, such as a micro-electro-mechanical systems (“MEMS”) device, by ion implantation. Electrical and other properties of the charge-dissipation structure may be cont...
09/13/2005
6944009Ultra broadband capacitor assembly
Systems and apparatuses for providing a broadband capacitor assembly. One broadband capacitor assembly includes a first capacitor operable to provide a first end of an operational band of frequencies within an operational band of a broadband capacitor assembly. The ...
09/13/2005
6940710Multilayered chip capacitor
A multilayered chip capacitor including a capacitor main body including a plurality of dielectric layers, which are laminated; at least one pair of first and second internal electrodes, each of which is formed on the corresponding one of the plural dielectric layers...
09/06/2005
6940709Storage capacitor having a scattering effect and method of manufacturing the same
A storage capacitor having a scattering effect is positioned in a substrate for use in a thin film transistor array loop. The storage capacitor is characterized by having a rough layer overlapped by a medium layer and a passivation layer. The storage capacitor furth...
09/06/2005
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