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| Number | Title | Issue Date |
| 8184410 | Magnetoresistive element having free layer magnetic compound expressed by M1M2O An example magnetoresistive element includes a first magnetic layer whose magnetization direction is substantially pinned toward one direction; a second magnetic layer whose magnetization direction is changed in response to an external magnetic field; and a spacer l... | 05/22/2012 |
| 8169753 | Current-perpendicular-to-plane (CPP) read sensor with ferromagnetic amorphous buffer and polycrystalline seed layers A current-perpendicular-to-plane (CPP) tunneling magnetoresistance (TMR) or giant magnetoresistance (GMR) read sensor with ferromagnetic amorphous buffer and polycrystalline seed layers is disclosed for reducing a read gap, in order to perform magnetic recording at ... | 05/01/2012 |
| 8164863 | Current-perpendicular-to-plane (CPP) read sensor with multiple ferromagnetic sense layers The invention provides a current-perpendicular-to-plane (CPP) tunneling magnetoresistance (TMR) or giant magnetoresistance (GMR) read sensor with multiple ferromagnetic sense layers. In one embodiment of the invention, a CPP TMR read sensor comprises a first sense l... | 04/24/2012 |
| 8154828 | Magnetoresistive effect element in CPP-type structure and magnetic disk device An MR element in a CPP structure includes a spacer layer made of Cu, a magnetic pinned layer containing CoFe and a free layer containing CoFe that are laminated to sandwich the spacer layer. The free layer is located below the magnetic pinned layer. The free layer i... | 04/10/2012 |
| 8149548 | Magnetic head and manufacturing method thereof Embodiments of the present invention provide a magnetic head having a read head of stable reading operation and with less magnetic fluctuation noise. According to one embodiment, a free layer has a structure comprising two ferromagnetic layers (a first free layer an... | 04/03/2012 |
| 8149547 | Magnetoresistive effect element and thin-film magnetic head with the magnetoresistive effect element An MR element includes a pinned layer, a free layer and a nonmagnetic space layer or a tunnel barrier layer sandwiched between the pinned layer and the free layer. A magnetization direction of the free layer is substantially perpendicular to a film surface thereof, ... | 04/03/2012 |
| 8144437 | Magnetoresistive element and thin film magnetic head An orthogonalizing bias function part formed at a rear part of an MR part in a DFL structure influencing a substantial orthogonalizing function of first and second ferromagnetic layers in respective magnetization directions thereof, non-magnetic metal layers formed ... | 03/27/2012 |
| 8139324 | Magnetic read head having a non-magnetic electrode layer and a magnetic read write system To provide a magnetic head that is suited for high recording density magnetic read and write, and has little noise. A magnetic pinned layer is formed on a non-magnetic electrode layer via a first insulating layer, and a magnetic free layer is formed on a medium-side... | 03/20/2012 |
| 8130475 | Method for manufacturing CPP-type thin film magnetic head provided with a pair of magnetically free layers The present invention relates to a method of manufacturing a DFL type thin film magnetic head. The method includes laminating each of the layers from the lower magnetization control layer to the upper exchange coupling layer above the substrate; laminating an auxili... | 03/06/2012 |
| 8130474 | CPP-TMR sensor with non-orthogonal free and reference layer magnetization orientation A TMR sensor structure having free and reference layers, where the magnetic orientations of the free and reference layers are non-orthogonal. In one embodiment, a ferromagnetic free layer film has a bias-point magnetization nominally oriented in plane of the film th... | 03/06/2012 |
| 8107201 | Hard bias design for extra high density recording A hard bias structure for biasing a free layer in a MR element within a read head is comprised of a composite hard bias layer having a Co78.6Cr5.2Pt16.2/Co65Cr15Pt20 configuration. The upper Co65... | 01/31/2012 |
| 8098464 | CPP-type magneto resistance element having a pair of free layers and spacer layer sandwiched therebetween A magnetic field detecting element includes: first and second free layers; a spacer layer; a first exchange coupling transmitting layer; a first pinned layer; a second exchange coupling transmitting layer; and a second pinned layer. The first and second pinned layer... | 01/17/2012 |
| 8094420 | Magnetoresistive device of the CCP (current perpendicular to plane) type with single-domain control of magnetization, and associated magnetic disk system The invention provides a magnetoresistive device of the CCP (current perpendicular to plane) structure comprising a magnetoresistive unit sandwiched between soft magnetic shield layers with a current applied in the stacking direction. The magnetoresistive unit compr... | 01/10/2012 |
| 8085512 | CPP-type magnetoresistance effect element having a pair of free layers A magnetic field detecting element comprises: a stack which includes first, second and third magnetic layers whose magnetization directions depend upon an external magnetic field, the second magnetic layer being positioned between the first magnetic layer and the th... | 12/27/2011 |
| 8081403 | Magnetic element having a smaller critical dimension of the free layer A magnetic element includes a pinned layer, a nonferromagnetic spacer layer, and a free layer. The nonferromagnetic spacer layer resides between the pinned layer and the free layer. The free layer has a track width of not more than 0.08 micron. ... | 12/20/2011 |
| 8081404 | Magnetoresistive element including an amorphous reference layer, a crystal layer, and a pinned layer A magnetoresistive element includes: a free layer made of a ferromagnetic material, the free layer configured to change the direction of magnetization under the influence of an external magnetic field; an insulating layer overlaid on the free layer, the insulating l... | 12/20/2011 |
| 8077436 | CPP-type magnetoresistance effect element having three magnetic layers A magnetoresistance effect element comprises: a magnetoresistive stack including: first, second and third magnetic layers whose magnetization directions change in accordance with an external magnetic field, said second magnetic layer being located between said first... | 12/13/2011 |
| 8072712 | Tunneling magnetic sensing element having two-layered hard bias layer At both sides of an element portion, a first hard bias layer having a higher residual magnetization Mr and a second hard bias layer having a higher coercive force Hc are deposited in that order from the bottom with one end of the first hard bias layer being closed c... | 12/06/2011 |
| 8054587 | Magnetoresistive effect element, thin-film magnetic head with magnetoresistive effect read head element, and magnetic disk drive apparatus with thin-film magnetic head An MR element includes a lower shield layer, a magnetization free function part stacked on the lower shield layer, an upper shield layer stacked on the magnetization free function part, a nonmagnetic intermediate layer stacked on a surface, that is opposite to a mag... | 11/08/2011 |
| 8035931 | Tunneling magneto-resistive spin valve sensor with novel composite free layer The conventional free layer in a TMR read head has been replaced by a composite of two or more magnetic layers, one of which is iron rich The result is an improved device that has a higher MR ratio than prior art devices, while still maintaining free layer softness ... | 10/11/2011 |
| 8031445 | Low noise magneto-resistive sensor utilizing magnetic noise cancellation A magnetic sensor, formed from a pair of magnetically free layers located on opposing sides of a non-magnetic layer, and method for its manufacture, are described. Biasing these free layers to be roughly orthogonal to one another causes them to be magnetostatically ... | 10/04/2011 |
| 8018693 | Magnetic detector including magnetoresistive element and impact sensor A magnetic detector includes a magnetoresistive element and an impact sensor. The magnetoresistive element has a plurality of element-constituent layers that are stacked and include a free layer having a magnetization direction that changes in response to a magnetic... | 09/13/2011 |
| 8018691 | CPP dual free layer magnetoresistive head for magnetic data storage A magnetoresistive sensor having a scissor free layer design and no pinned layer. The sensor includes first and second free layers that have magnetizations that are oriented at 90 degrees to one another and has a third magnetic layer with a magnetization that is ant... | 09/13/2011 |
| 8018690 | CPP magnetic recording head with self-stabilizing vortex configuration A CPP MTJ or GMR read sensor is provided in which the free layer is self-stabilized by a magnetization in a circumferential vortex configuration. This magnetization permits the pinned layer to be magnetized in a direction parallel to the ABS plane, which thereby mak... | 09/13/2011 |
| 8018692 | Thin film magnetic head and method of manufacturing the same A thin film magnetic head has a magneto-resistive (MR) effect element including an MR effect film formed by sequentially layering a magnetic pinned layer, a nonmagnetic layer and a free layer, and a pair of bias magnetic field application layers formed at junction t... | 09/13/2011 |
| 8009392 | Thin film magnetic head and magnetic disk device Foundation layers of a thin film magnetic head are disposed between insulating layers and bias magnetic field application layers, and are configured of Cr or Cr alloy. The insulating layers are configured of a Si oxide such that the Si content of the Si oxide is in ... | 08/30/2011 |
| 8004800 | Magnetoresistive sensor with nitrogenated hard bias layer for improved coercivity A magnetoresistive sensor having a hard bias structure that provides improved bias field robustness. The sensor includes a nitrogenated hard bias layer and a seed layer that include a nitrogenated NiTa layer and a layer of Ru. The seed layer can also include a layer... | 08/23/2011 |
| 8000065 | Magnetoresistive element and thin-film magnetic head A magnetoresistive element includes: a detection surface that receives a magnetic field to be detected; a free layer made of a ferromagnetic material, having an end face located in the detection surface, and exhibiting a change in magnetization direction in response... | 08/16/2011 |
| 7965474 | Magnetic oscillation element A magnetic oscillation element includes a magnetization fixing layer whose magnetization direction is substantially pinned toward one direction, a nonmagnetic layer that is disposed on the magnetization fixing layer, and a magnetization free layer whose magnetizatio... | 06/21/2011 |
| 7957107 | Current-perpendicular-to-the-plane (CPP) magnetoresistive sensor with antiparallel-free layer structure and low current-induced noise A current-perpendicular-to-the-plane (CPP) magnetoresistive sensor has an antiparallel free (APF) structure as the free layer and a specific direction for the applied bias or sense current. The (APF) structure has a first free ferromagnetic (FL1), a second fr... | 06/07/2011 |
| 7929258 | Magnetic sensor including a free layer having perpendicular to the plane anisotropy A magnetic sensor includes a reference layer having a first magnetization direction and a free layer assembly having an effective magnetization direction substantially perpendicular to the first magnetization direction and substantially perpendicular to a plane of e... | 04/19/2011 |
| 7929259 | Magnetic sensing device including a sense enhancing layer A magnetic sensor includes a sensor stack having a first magnetic portion, a second magnetic portion, and a barrier layer between the first magnetic portion and the second magnetic portion. At least one of the first magnetic portion and the second magnetic portion i... | 04/19/2011 |
| 7916433 | Magnetic element utilizing free layer engineering A method and system for providing a magnetic element are described. The method and system include providing a pinned layer, a barrier layer, and a free layer. The free layer includes a first ferromagnetic layer, a second ferromagnetic layer, and an intermediate laye... | 03/29/2011 |
| 7911745 | Thin-film magnetic head comprising a magneto-resistive effect device of the CPP structure including a re-magnetizing bias layer and magnetic disk system A thin-film magnetic head includes a magneto-resistive effect device of the CPP structure including a multilayer film comprising a stack of a fixed magnetization layer, a nonmagnetic layer and a free layer stacked one upon another in order, with a sense current appl... | 03/22/2011 |
| 7898775 | Magnetoresistive device having bias magnetic field applying layer that includes two magnetic layers antiferromagnetically coupled to each other through intermediate layer An MR element includes a free layer whose direction of magnetization changes in response to an external magnetic field. Two bias magnetic field applying layers are disposed adjacent to two side surfaces of the MR element. Each bias magnetic field applying layer incl... | 03/01/2011 |
| 7894168 | Thin-film magnetic head comprising a magneto-resistive effect device of a CPP structure and having a shunting layer The invention provides a thin-film magnetic head having a magneto-resistive effect device of the CPP (current perpendicular to plane) structure comprising a multilayer film in which a fixed magnetization layer, a nonmagnetic layer and a free layer are stacked togeth... | 02/22/2011 |
| 7894167 | Thin-film magnetic head with little reattachment Provided is a magnetoresistive effect element in which a magneto-sensitive portion is formed in a position where the portion sufficiently receives bias field and the influence of reattachments on reading output is avoided. The magneto-sensitive portion has a pinned ... | 02/22/2011 |
| 7881023 | Magnetoresistive device of the CPP type, and magnetic disk system The invention provides a magnetoresistive device with the CPP (current perpendicular to plane) structure, comprising a magnetoresistive unit, and a first shield layer and a second shield layer located and formed such that the magnetoresistive unit is sandwiched betw... | 02/01/2011 |
| 7876537 | Magnetoresistive element incorporating conductive film disposed on peripheral surface of layered structure including spacer layer, free layer and pinned layer, the conductive film allowing conduction between the free layer and the pinned layer An MR element incorporates a layered structure. The layered structure includes: a spacer layer having a first surface and a second surface that face toward opposite directions; a free layer disposed adjacent to the first surface of the spacer layer and having a dire... | 01/25/2011 |
| 7848065 | Magnetoresistive sensor having an anisotropic hard bias with high coercivity A magnetoresistive sensor having magnetically anisotropic bias layers for biasing the free layer of the sensor. Hard bias structures for biasing the magnetization of the free layer are formed at either side of the sensor stack, and each of the hard bias structure in... | 12/07/2010 |
