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| Number | Title | Issue Date |
| 8189304 | Magnetoresistive magnetic head having a cpp element using a heusler alloy layer and a high saturation magnetization layer A magnetoresistive magnetic head according to one embodiment uses a current-perpendicular-to-plane magnetoresistive element having a laminate of a free layer, an intermediate layer, and a pinned layer, the pinned layer being substantially fixed to a magnetic field t... | 05/29/2012 |
| 8184409 | Magnetoresistive device with enhanced pinned layer A magnetoresistive device includes a free layer, a separating layer, a pinned layer, and a magnetic stabilizer in close proximity to the pinned layer, wherein the magnetic stabilizer may enhance the stability of the magnetization direction of the pinned layer. ... | 05/22/2012 |
| 8184408 | Magnetoresistive element and method of manufacturing the same A magnetoresistive element includes a magnetoresistive film including a magnetization pinned layer, a magnetization free layer, an intermediate layer arranged between the magnetization pinned layer and the magnetization free layer, a cap layer arranged on the magnet... | 05/22/2012 |
| 8174800 | Magnetoresistive element, method of manufacturing the same, and magnetic multilayered film manufacturing apparatus A magnetoresistive element includes an antiferromagnetic layer formed from a layer containing manganese, a layered magnetization fixed layer which includes a first magnetization fixed layer located over a side of the antiferromagnetic layer and formed from a layer c... | 05/08/2012 |
| 8116043 | Method and system for providing a magnetic transducer having an improved read sensor synthetic antiferromagnet A method and system for providing a magnetic structure in magnetic transducer is described. The method and system include providing a pinning layer, a synthetic antiferromagnetic (SAF) adjacent to the pinning layer, a nonmagnetic layer, and a sensor layer. The SAF r... | 02/14/2012 |
| 8085511 | Magnetoresistance effect element having resistance adjusting layer and thin-film insertion layer A magnetoresistance effect element includes a magnetoresistance effect film including a magnetically pinned layer having a magnetic material film whose direction of magnetization is pinned substantially in one direction, a magnetically free layer having a magnetic m... | 12/27/2011 |
| 8068315 | Current perpendicular to plane GMR and TMR sensors with improved magnetic properties using Ru/Si seed layers A magnetoresisive sensor having a thin seed layer that provides an exceptionally smooth interface between layers of the sensor stack. The exceptionally smooth interface provided by the seed layer reduces interlayer exchange coupling allowing the non-magnetic spacer ... | 11/29/2011 |
| 8068316 | Low noise magnetic field sensor A magnetoresistive sensor including: a first pinned-magnetization magnetic layer and a free-magnetization magnetic layer, separated by first separating layer for magnetic uncoupling. The sensor further includes a second pinned-magnetization magnetic layer, separated... | 11/29/2011 |
| 7983011 | AP1 layer for TMR device A TMR read head with improved voltage breakdown is formed by laying down the AP1 layer as two or more layers. Each AP1 sub-layer is exposed to a low energy plasma for a short time before the next layer is deposited. This results in a smooth surface, onto which to de... | 07/19/2011 |
| 7978441 | CPP with elongated pinned layer CPP magnetic read head designs have been improved by increasing the length of the AFM layer relative to that of both the free and spacer layers. The length of the pinned layer is also increased, but by a lesser amount, an abutting conductive layer being inserted to ... | 07/12/2011 |
| 7978440 | Seed/AFM combination for CCP GMR device Improved CPP GMR devices have been fabricated by replacing the conventional seed layer (typically Ta) with a bilayer of NiCr on Ta, said seed being deposited on the NiFe layer that constitutes a magnetic shield. Additional improvement was also obtained by replacing ... | 07/12/2011 |
| 7978439 | TMR or CPP structure with improved exchange properties An insertion layer is provided between an AFM layer and an AP2 pinned layer in a GMR or TMR element to improve exchange coupling properties by increasing Hex and the Hex/Hc ratio without degrading the MR ratio. The insertion layer may be a 1 to 15 Angstrom thick amo... | 07/12/2011 |
| 7961441 | Exchange coupled film including hafnium and amorphous layers usable in a magnetoresistive element in a thin-film magnetic head The exchange coupled film according to the present invention comprises a buffer layer including a laminate in which an amorphous layer and a hafnium layer are laminated in that order, an antiferromagnetic layer laminated on the hafnium layer of the buffer layer via ... | 06/14/2011 |
| 7961440 | Current perpendicular to plane magnetoresistive sensor with reduced read gap A magnetoresistive sensor having a greatly reduced read gap. The sensor has a pinned layer structure formed above the free layer. A layer of antiferromagnetic material (AFM layer) is formed over the pinned layer structure and has a front edge disposed toward, but re... | 06/14/2011 |
| 7894166 | CPP GMR device with ferromagnetic layer split in depth direction A magneto-resistive effect device of a CPP structure includes a nonmagnetic intermediate layer, and a first ferromagnetic layer and a second ferromagnetic layer stacked together and formed with the nonmagnetic intermediate layer sandwiched between them. The first fe... | 02/22/2011 |
| 7894165 | CCP magnetoresistive effect device with Fe barrier layers inhibiting diffusion of Co atoms to Heusler alloy layers in fixed layer and free layer, and head, head-gimbal assembly and hard disk system including said device The invention provides a magneto-resistive effect device having a CPP (current perpendicular to plane) structure comprising a nonmagnetic spacer layer, and a fixed magnetized layer and a free layer stacked one upon another with said nonmagnetic spacer layer sandwich... | 02/22/2011 |
| 7876536 | Multilayered film having crystal grains grown at an inclination to a substrate, and magnetoresistive head using the film Embodiments of the present invention provides sufficiently high exchange coupling with a magnetic layer and improve the yield and reliability of a magnetoresistive head. By using a tilted growth crystalline structured antiferromagnetic film manufactured by an obliqu... | 01/25/2011 |
| 7872837 | Method and apparatus for providing a magnetic read sensor having a thin pinning layer and improved magnetoreistive coefficient A method and apparatus for providing a magnetic read sensor having a thin pinning layer and improved magnetoresistive coefficient ΔR/R is disclosed. A thin IrMn alloy pinning layer is disposed adjacent a composite pinned layer, wherein the percentage of iron in the... | 01/18/2011 |
| 7869166 | Thin film magnetic head having a bias magnetic layer provided with antiferromagnetic layer and a pinned layer provided with hard magnetic layer A thin film magnetic head has: a spin valve having a pinned layer whose having a fixed magnetization direction, a first nonmagnetic intermediate layer disposed on the pinned layer, and a free layer having a variable magnetization direction, the free layer disposed o... | 01/11/2011 |
| 7859800 | Magneto-resistive effect element magnetic disk device having magneto-resistive effect film and method of forming a CPP-type magneto-resistive effect element having a soft magnetic layer composed of columnar crystal A magneto-resistive effect element is provided with a first soft magnetic layer, a magneto-resistive effect film formed directly on the first soft magnetic layer. and a second soft magnetic layer formed on the magneto-resistive effect film. The magneto-resistive eff... | 12/28/2010 |
| 7855860 | Magnetoresistance element magnetic random access memory, magnetic head and magnetic storage device A magnetoresistance element includes an antiferromagnetic layer, a fixed ferromagnetic layer, a first nonmagnetic layer and a free ferromagnetic layer. The antiferromagnetic layer is formed on the upper surface side of a substrate. The fixed ferromagnetic layer is f... | 12/21/2010 |
| 7848064 | Enhanced anti-parallel-pinned sensor using thin ruthenium spacer and high magnetic field annealing An anti-parallel pinned sensor is provided with a spacer that increases the anti-parallel coupling strength of the sensor. The anti-parallel pinned sensor is a GMR or TMR sensor having a pure ruthenium or ruthenium alloy spacer. The thickness of the spacer is less t... | 12/07/2010 |
| 7835116 | Magnetoresistive stack with enhanced pinned layer A magnetoresistive stack includes a free layer, a separating layer, a pinned layer, and a magnetic stabilizer in close proximity to the pinned layer such that such that the magnetic stabilizer enhances the stability of the magnetization direction of the pinned layer... | 11/16/2010 |
| 7835117 | Detection of magnetic beads using a magnetoresistive device together with ferromagnetic resonance A method and apparatus for detecting the presence of magnetic beads is disclosed. By providing both a static magnetic field and a magnetic field that alternates in the MHz range, or beyond, the bead can be excited into FMR (ferromagnetic resonance). The appearance o... | 11/16/2010 |
| 7804667 | Magnetoresistive element with a Heusler alloy layer that has a region in which an additive element changes in concentration An MR element incorporates a nonmagnetic conductive layer, and a pinned layer and a free layer that are disposed to sandwich the nonmagnetic conductive layer. Each of the pinned layer and the free layer includes a Heusler alloy layer. The Heusler alloy layer contain... | 09/28/2010 |
| 7800867 | CPP GMR head with antiferromagnetic layer disposed at rear of ferrimagnetic pinned layer A CPP giant magnetoresistive head includes lower and upper shield layers, and a giant magnetoresistive element disposed between the upper and lower shield layers and including a pinned magnetic layer, a free magnetic layer and a nonmagnetic layer disposed between th... | 09/21/2010 |
| 7796364 | Current-perpendicular-to-plane sensor epitaxially grown on a bottom shield A current-perpendicular-to-plane (CPP) magnetoresistance sensor and a method for forming a current-perpendicular-to-plane (CPP) magnetoresistance sensor. The method includes providing a ferromagnetic shield layer and disposing one or more seed layers on the ferromag... | 09/14/2010 |
| 7791843 | Magnetoresistance effect element, magnetic head and magnetic recording and/or reproducing system There is provided a practical magnetoresistance effect element which has an appropriate value of resistance, which can be sensitized and which has a small number of magnetic layers to be controlled, and a magnetic head and magnetic recording and/or reproducing syste... | 09/07/2010 |
| 7782576 | Exchange-coupling film incorporating stacked antiferromagnetic layer and pinned layer, and magnetoresistive element including the exchange-coupling film An exchange-coupling film incorporates an antiferromagnetic layer and a pinned layer. The pinned layer includes a first ferromagnetic layer, a second ferromagnetic layer, a third ferromagnetic layer, a nonmagnetic middle layer, and a fourth ferromagnetic layer that ... | 08/24/2010 |
| 7764471 | Magneto-resistance effect element having diffusion blocking layer and thin-film magnetic head A magnetoresistance effect element (MR element) for use in a thin-film magnetic head has a buffer layer, an antiferromagnetic layer, a pinned layer, a spacer layer, a free layer, and a cap layer that are successively stacked. A sense current flows in a direction per... | 07/27/2010 |
| 7760473 | Magnetoresistance element employing Heusler alloy as magnetic layer An advantage of the application is to provide a magnetoresistance element capable of increasing a plateau magnetic field Hp1 while maintaining high ΔRA. A magnetic layer 4c1 adjacent to a non-magnetic material layer 5 in a second ... | 07/20/2010 |
| 7733612 | GMR device of the CPP structure, thin-film magnetic head, head gimbal assembly, and hard disk system In the GMR device of the CPP structure using the synthetic pinned layer as the fixed magnetization layer (pinned layer), the width W1 of the inner pin layer is set at 50 nm or less; the fixed magnetization layer is configured in such a way as to have a given ... | 06/08/2010 |
| 7733613 | Method for manufacturing a magnetoresistive-effect device A magnetic disk apparatus having a highly sensitive reproducing head and a method for manufacturing the magnetic disk apparatus are disclosed. A spin-value-type multilayer film composed of an antiferromagnetic layer, a ferromagnetic layer, a nonmagnetic layer and a ... | 06/08/2010 |
| 7715153 | Magnetoresistive effect element having inner and outer pinned layers including a cobalt iron alloy A magneto-resistive effect element includes a free layer having a magnetization direction which varies with respect to an external magnetic field; a pinned layer which includes a stacked structure comprising an outer pinned layer which has a magnetization direction ... | 05/11/2010 |
| 7679866 | CPP spin valve with long spin diffusion length AP1 layers A magnetoresistive sensor having a pinned layer that includes a first magnetic layer (AP1) a second magnetic layer (AP2) and an antiparallel coupling layer sandwiched between the AP1 and AP2 layers. The AP1 layer is adjacent to a layer of antiferromagnetic material ... | 03/16/2010 |
| 7675717 | Magnetic read head having increased electron exchange A magnetic head of either CIP or CPP configuration is disclosed, having a read sensor with a strongly pinned ferromagnetic layer due to increased electronic exchange with the AFM layer. The read sensor includes a lower seed layer whose material is chosen from a grou... | 03/09/2010 |
| 7672088 | Heusler alloy with insertion layer to reduce the ordering temperature for CPP, TMR, MRAM, and other spintronics applications A spin valve structure is disclosed in which an AP1 layer and/or free layer are made of a laminated Heusler alloy having Al or FeCo insertion layers. The ordering temperature of a Heusler alloy such as Co2MnSi is thereby lowered from about 350° C. to 280... | 03/02/2010 |
| 7672089 | Current-perpendicular-to-plane sensor with dual keeper layers This invention provides a CPP TMR or GMR sensor with an amorphous ferromagnetic lower keeper layer and a crystalline ferromagnetic upper keeper layer. The amorphous ferromagnetic lower keeper layer strongly exchange-couples to an underlying antiferromagnetic pinning... | 03/02/2010 |
| 7663846 | Magnetoresistive sensor having an enhanced lead overlay design and shape enhanced pinning A magnetoresistive sensor having a lead overlay defined trackwidth and a pinned layer that extends beyond the stripe height defined by the free layer of the sensor. The extended pinned layer has a strong shape induced anisotropy that maintains pinning of the pinned ... | 02/16/2010 |
| 7652856 | Current perpendicular to plane (CPP) magnetoresistive sensor having strong pinning and small gap thickness A current perpendicular to plane (CPP) magnetoresistive sensor that avoids spin torque noise while having high dr/R performance and small gap. The sensor is a dual magnetoresistive sensor having first and second pinned layers and a free layer disposed between the tw... | 01/26/2010 |
