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| Number | Title | Issue Date |
| 8169752 | Method for manufacturing a magneto-resistance effect element having spacer layer In a method for manufacturing a magneto-resistance effect element having a pinned magnetic layer of which a magnetization is fixed substantially in one direction, a free magnetization layer of which a magnetization is rotated in accordance with an external magnetic ... | 05/01/2012 |
| 8164862 | Seed layer for TMR or CPP-GMR sensor A composite seed layer that reduces the shield to shield distance in a read head while improving Hex (exchange coupling field) and Hex/Hc (Hc=coercivity) is disclosed and has a SM/A/SM/B configuration in which the SM layers are soft magnetic layers, the A (amorphous... | 04/24/2012 |
| 8154825 | Magnetic recording head and magnetic recording device It is made possible to provide a magnetic head that can stabilize the high-frequency magnetic field generated from the spin torque oscillator. A magnetic head includes: first and second main magnetic poles; and a spin torque oscillator provided between the first and... | 04/10/2012 |
| 8125744 | Current perpendicular to plane magneto-resistance effect element, magnetic head, and magnetic recording/reproducing device A current perpendicular to plane magneto-resistance effect element includes: a magneto-resistance effect film comprised of a fixed magnetization layer, a free magnetization layer, and a complex spacer layer including an insulating layer and current paths formed thro... | 02/28/2012 |
| 8125745 | Magnetic thin film, and magnetoresistance effect device and magnetic device using the same A magnetic thin film being ferromagnetic and exhibiting large spin polarization at room temperature is provided that comprises a substrate (2) and a Co2Fe(Si1-xAlx) thin film (3) formed on the substrate (2) where... | 02/28/2012 |
| 8094445 | Electronic device with protection for disk drive An electronic device includes a tray, a disk drive secured in the tray, a first back plane secured on the tray, and a flexible connecting member. The disk drive connects with the first back plane by the connecting member so that the disk drive is spaced from the fir... | 01/10/2012 |
| 8081402 | Magnetoresistive head having a current screen layer for confining current therein and method of manufacture thereof Embodiments of the present invention provide a magnetic head incorporating a CPP-GMR device having a high output at a suitable resistance. According to one embodiment, in a Current Perpendicular to Plane-Giant Magneto Resistive (CPP-GMR) head comprising a pinned lay... | 12/20/2011 |
| 8049999 | Magnetoresistance effect element with a layer containing an oxide as a principal component and containing a magnetic transition metal element which does not bond to oxygen There are provided a magnetoresistance effect element, a magnetic head, a magnetic head assembly and a magnetic recording system, which have high sensitivity and high reliability. The magnetoresistance effect element has two ferromagnetic layers, a non-magnetic laye... | 11/01/2011 |
| 8040641 | Magneto-resistance effect element with a stacked body having a constricted shape A magneto-resistance effect element comprises a stacked body which comprises a pinned layer having a fixed magnetization direction, a free layer having a magnetization direction that varies according to an external magnetic field, and a nonmagnetic spacer layer whic... | 10/18/2011 |
| 8031443 | Magneto-resistance effect element, magnetic head, magnetic recording/reproducing device and method for manufacturing a magneto-resistance effect element A magneto-resistance effect element, including: a first magnetization layer of which a magnetization is substantially fixed in one direction; a second magnetization layer of which a magnetization is rotated in accordance with an external magnetic field; an intermedi... | 10/04/2011 |
| 8031444 | Magnetoresistive device of the CPP type, and magnetic disk system The semiconductor oxide layer that forms a part of the spacer layer in the inventive giant magnetoresistive device (CPP-GMR device) is composed of zinc oxide of wurtzite structure that is doped with a dopant given by at least one metal element selected from the grou... | 10/04/2011 |
| 8031441 | CPP device with an enhanced dR/R ratio A CPP-GMR spin valve having a composite spacer layer comprised of at least one metal (M) layer and at least one semiconductor or semi-metal (S) layer is disclosed. The composite spacer may have a M/S, S/M, M/S/M, S/M/S, M/S/M/S/M, or a multilayer (M/S/M)n | 10/04/2011 |
| 8031442 | Magnetic head having CPP sensor with improved biasing for free magnetic layer A magnetic head for a hard disk drive having a CPP read head sensor that includes a layered sensor stack including a free magnetic layer and hard bias elements that are disposed on the sides of the free magnetic layer to provide a biasing magnetization for the free ... | 10/04/2011 |
| 8023232 | Film and method for producing nano-particles for magnetoresistive device A method of generating a thin film for use in a spin valve of a magnetoresistive (MR) sensor having a nano-constricted spacer is provided. The bottom portion of the spin valve is deposited up to the pinned layer, a deposition chamber is provided, and the spacer laye... | 09/20/2011 |
| 8014109 | Current-perpendicular-to-the-plane (CPP) magnetoresistive sensor with antiparallel-pinned layer containing silicon A current-perpendicular-to-the-plane (CPP) spin-valve (SV) magnetoresistive sensor uses an antiparallel (AP) pinned structure and has a ferromagnetic alloy comprising Co, Fe and Si in the reference layer of the AP-pinned structure and optionally in the CPP-SV sensor... | 09/06/2011 |
| 7957106 | Chemically disordered material used to form a free layer or a pinned layer of a magnetoresistance (MR) read element Magnetoresistive (MR) read elements and associated methods of fabrication are disclosed. A free layer and/or a pinned layer of an MR read element are formed from a magnetic material such as Co2−x−yMn1+xAl1+y, Co2−x−y | 06/07/2011 |
| 7952839 | Magnetoresistive element including an antiferromagnetic layer disposed away from a detection surface An MR element includes a first ferromagnetic layer, a second ferromagnetic layer, a spacer layer disposed between the first and second ferromagnetic layers; and an antiferromagnetic layer disposed on a side of the first ferromagnetic layer farther from the spacer la... | 05/31/2011 |
| 7948718 | Magnetoresistive head having an insulating layer with a particular compressive stress An MR element incorporates: a nonmagnetic conductive layer having two surfaces facing toward opposite directions; a free layer disposed adjacent to one of the surfaces of the nonmagnetic conductive layer, wherein the direction of magnetization in the free layer chan... | 05/24/2011 |
| 7944651 | CPP-type magnetoresistive effect head and method of manufacturing the same Embodiments of the present invention help to prevent a reduction in the bias magnetic field of a current perpendicular to the plane-type (CPP-type) magnetoresistive effect head, thus suppressing a reduction in read output. According to one embodiment, a CPP-type mag... | 05/17/2011 |
| 7944650 | Magnetoresistive element including layered film touching periphery of spacer layer An MR element includes an MR stack including a first ferromagnetic layer, a second ferromagnetic layer, and a spacer layer disposed between the first and the second ferromagnetic layer. The MR stack has an outer surface, and the spacer layer has a periphery located ... | 05/17/2011 |
| 7936539 | Bottom spin valve GMR sensor incorporating plural oxygen surfactant layers A bottom spin-valve GMR sensor has been fabricated that has ultra-thin layers of high density and smoothness. In addition, these layers are inherently furnished with sub-monolayer thick oxygen surfactant layers. The sensor is fabricated using a method in which the l... | 05/03/2011 |
| 7929257 | Magnetic thin film having spacer layer that contains CuZn A magnetic thin film has a pinned layer whose magnetization direction is fixed with respect to an external magnetic field, a free layer whose magnetization direction is changed according to the external magnetic field, and a spacer layer which is sandwiched between ... | 04/19/2011 |
| 7920361 | Magnetoresistive effect element with intermediate oxide layer containing boron and an element selected from Ca, Mg, Sr, Ba, Ti, and Sc It is made possible to provide a magnetoresistive effect element that can reverse magnetization direction with a low current, having low areal resistance (RA) and a high TMR ratio. A magnetoresistive effect element includes: a film stack that includes a magnetizatio... | 04/05/2011 |
| 7920362 | Magnetio-resistive device including a multi-layer spacer which includes a semiconductor oxide layer A giant magneto-resistive effect device having a CPP structure including a spacer layer, and a fixed magnetization layer and a free layer stacked one upon another with said spacer layer interposed between them. The free layer functions such that its magnetization di... | 04/05/2011 |
| 7916432 | Thin-film patterning method for magnetoresistive device The thin-film patterning method for a magnetoresistive device comprises forming a functional layer on a substrate; forming a first mask layer above the functional layer; forming a patterned resist on the first mask layer; etching the first mask layer by using the re... | 03/29/2011 |
| 7916431 | Magnetoresistive element including insulating film touching periphery of spacer layer An MR element includes a stack of layers including a first ferromagnetic layer, a second ferromagnetic layer, and a spacer layer disposed between the first and the second ferromagnetic layer. The stack of layers has an outer surface, and the spacer layer has a perip... | 03/29/2011 |
| 7881022 | Magnetic head and method for fabricating the same Embodiments in accordance with the present invention provide a sensor to produce high output with a small track width. Particular embodiments include forming a magnetoresistive sensor of a read head to be substantially vertical in its upper portion and gently upward... | 02/01/2011 |
| 7864490 | CPP head with parasitic shunting reduction The series resistance of a CPP GMR stack can be reduced by shaping it into a small upper, on a somewhat larger, lower part. Because of the sub-micron dimensions involved, good alignment between these is normally difficult to achieve. The present invention discloses ... | 01/04/2011 |
| 7859798 | Magnetic thin film having non-magnetic spacer layer that is provided with SnOlayer A magnetic thin film has: a pinned layer whose magnetization direction is fixed with respect to an external magnetic field; a free layer whose magnetization direction is changed in accordance with the external magnetic field; and a non-magnetic spacer layer that is ... | 12/28/2010 |
| 7859799 | Magnetoresistive head and a manufacturing method thereof Embodiments in accordance with the present invention reduce the influence of etching damage at junction edge of a magnetoresistive film in the sensor height direction, lower the deterioration of dielectric breakdown voltage between an upper magnetic shield layer and... | 12/28/2010 |
| 7855859 | Magnetoresistive element and magnetic head In an MR element, first and second ferromagnetic layers are antiferromagnetically coupled to each other through a spacer layer, and have magnetizations that are in opposite directions when no external magnetic field is applied thereto and that change directions in r... | 12/21/2010 |
| 7843669 | Magnetoresistance effect element, magnetic head, magnetic reproducing apparatus, and magnetic memory A magnetoresistance effect element comprises a magnetoresistance effect film and a pair of electrode. The magnetoresistance effect film having a first magnetic layer whose direction of magnetization is substantially pinned in one direction; a second magnetic layer w... | 11/30/2010 |
| 7826180 | Magneto-resistive effect device of the CPP structure, and magnetic disk system The invention provides a giant magneto-resistive effect device (CPP-GMR device) having a CPP (current perpendicular to plane) structure comprising a spacer layer, and a fixed magnetized layer and a free layer stacked one upon another with said spacer layer interpose... | 11/02/2010 |
| 7826181 | Magnetic memory with porous non-conductive current confinement layer A magnetic element having a ferromagnetic pinned layer, a ferromagnetic free layer, a non-magnetic spacer layer therebetween, and a porous non-electrically conducting current confinement layer between the free layer and the pinned layer. The current confinement laye... | 11/02/2010 |
| 7813086 | Thin film magnetic head comprising metal layer and having improved asymmetry characteristic and method of producing the same Producing a thin film magnetic head includes forming a pair of openings in a predetermined region of a TMR layer formed on a lower magnetic shield layer; forming a pair of bias-applying layers in the pair of openings so that an upper surface thereof is located above... | 10/12/2010 |
| 7813087 | Magnetic memory device having spin wave oscillator arranged to heat magnetic tunnel junction element A magnetic memory device includes a magnetic tunnel junction element having a plurality of ferromagnetic layers stacked with a dielectric layer interposed between the adjacent ferromagnetic layers and storing magnetic information through reversal of magnetization of... | 10/12/2010 |
| 7808748 | Magnetoresistive element including heusler alloy layer A pinned layer of an MR element includes an underlying magnetic layer made of a magnetic alloy layer having a body-centered cubic structure, and a Heusler alloy layer formed on the underlying magnetic layer. A free layer of the MR element includes an underlying magn... | 10/05/2010 |
| 7808747 | Magnetoresistive effect element, magnetic head and magnetic recording/reproducing apparatus A magnetoresistive effect element includes a fixed magnetization layer; a free magnetization layer; a nonmagnetic spacer layer between the fixed magnetization layer and the free magnetization layer; and an insertion layer disposed on an opposite side of the free mag... | 10/05/2010 |
| 7808749 | Magnetoresistance effect element, substrate therefor and manufacturing method thereof A magnetoresistance effect element which is used in a magnetic sensor is disclosed. The magnetoresistance effect element includes a soft layer whose magnetization easy direction is changed by a direction of an external magnetic field, and a magnetization fixing laye... | 10/05/2010 |
| 7800866 | Magnetic sensing element containing quaternary Heusler alloy CoMn (GeSn) which constitutes a free magnetic layer or pinned magnetic layer A magnetic sensing element is described, including a multilayer film including a pinned magnetic layer, a free magnetic layer disposed on the pinned magnetic layer with a nonmagnetic layer therebetween, wherein a current flows perpendicular to the surfaces of the in... | 09/21/2010 |
