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User-operated amusement apparatus for kicking the user's buttocks
An apparatus including a user-operated and controlled apparatus for self-infliction of repetitive blows to the user's buttocks by a plurality of elongated arms bearing flexible extensions that rotate under the user's control.
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| Number | Title | Issue Date |
| 8174799 | Differential magnetoresistive magnetic head Embodiments of the present invention help to provide a single element type differential magnetoresistive magnetic head capable of achieving high resolution and high manufacturing stability. According to one embodiment, a magnetoresistive layered film is formed by st... | 05/08/2012 |
| 8045298 | Three terminal magnetic sensing device having a track width defined in a localized region by a patterned insulator and methods of making the same A three terminal magnetic sensing device (TTM) having a trackwidth defined in a localized region by a patterned insulator, and methods of making the same, are disclosed. In one illustrative example, one or more first sensor layers (e.g. which includes a “base” l... | 10/25/2011 |
| 7974047 | Current perpendicular to plane differential magnetoresistance read head design using a current confinement structure proximal to an air bearing surface A current to perpendicular to plane (CPP) differential magnetoresistance (DMR) read head using current confinement proximal to an air bearing surface (ABS) is disclosed. The CPP DMR read head includes a first electrically conductive lead, a first MR sensor formed on... | 07/05/2011 |
| 7881018 | Differential current perpendicular to plane giant magnetoresistive sensor structure having improved robustness against spin torque noise A differential giant magnetoresistive sensor for sensing a magnetic signal. The differential sensor has a structure configured to minimize spin torque noise. The differential magnetoresistive sensor includes first and second magnetoresistive sensor elements and a th... | 02/01/2011 |
| 7697242 | Method for providing a self-pinned differential GMR sensor having a bias structure comprising layers of ferromagnetic and non-magnetic material selected to provide a net-zero magnetic moment A method for providing a self-pinned differential GMR sensor and self-pinned differential GMR sensor. The differential GMR head includes two self-pinned GMR sensors separated by a gap layer. The gap layer may act as a bias structure to provide antiparallel magnetiza... | 04/13/2010 |
| 7593193 | Magnetoresistive element and magnetic memory device A magnetoresistive element has a ferromagnetic double tunnel junction having a stacked structure of a first antiferromagnetic layer/a first ferromagnetic layer/a first dielectric layer/a second ferromagnetic layer/a second dielectric layer/a third ferromagnetic laye... | 09/22/2009 |
| 7511926 | Larger dR CPP GMR structure A current perpendicular to plane (CPP) giant magnetoresistive (GMR) sensor having two dual spin valves sharing a common self pinned pinned layer. ... | 03/31/2009 |
| 7425456 | Antiferromagnetic stabilized storage layers in GMRAM storage devices A giant magnetoresistive memory device includes a magnetic sense layer, a magnetic storage layer, a non-magnetic spacer layer between the magnetic sense layer and the magnetic storage layer, and an antiferromagnetic layer formed in proximity to the magnetic storage ... | 09/16/2008 |
| 7408730 | Reproducing head and magnetic disk drive A reproducing head including a read element, first and second electrodes provided at the opposite ends of the read element, a ground electrode provided between the first and second electrodes, a first constant current circuit for passing a first constant current bet... | 08/05/2008 |
| 7405906 | Current-perpendicular-to-plane magnetoresistance effect device with double current control layers A magnetoresistance effect element of the dual spin valve type using a current-perpendicular-to-the-plane (CPP) system where a sensing current flows perpendicular to the stacked faces of a plurality of conductive layers, the magnetoresistance effect element comprise... | 07/29/2008 |
| 7370404 | Method for resetting pinned layer magnetization in a magnetoresistive sensor A spin valve sensor in a read head has a spacer layer which is located between a self-pinned AP pinned layer structure and a free layer structure. The free layer structure is longitudinally stabilized by first and second hard bias layers which abut first and second ... | 05/13/2008 |
| 7369375 | Magneto-resistance effect element and magneto-resistance effect head A magneto-resistance effect head is provided with a lower conductive layer which is provided with a recessed portion, and a vertical bias layer is provided in the recessed portion. A first magnetic layer is provided on the lower conductive layer. On the first magnet... | 05/06/2008 |
| 7369371 | Magnetoresistive sensor having a shape enhanced pinned layer A magnetoresistive sensor having a pinned layer that extends beyond the stripe height defined by the free layer of the sensor. The extended pinned layer has a strong shape induced anisotropy that maintains pinning of the pinned layer moment. The extended portion of ... | 05/06/2008 |
| 7362548 | Magnetic sensor and manufacturing method therefor A magnetic sensor comprises magnetoresistive elements and permanent magnet films, which are combined together to form GMR elements formed on a quartz substrate having a square shape, wherein the permanent magnet films are paired and connected to both ends of the mag... | 04/22/2008 |
| 7360302 | Manufacturing method of a magnetic sensor A magnetic sensor comprises magnetoresistive elements and permanent magnet films, which are combined together to form GMR elements formed on a quartz substrate having a square shape, wherein the permanent magnet films are paired and connected to both ends of the mag... | 04/22/2008 |
| 7359163 | Tunnel magnetoresistance effect device, and a portable personal device A TMR device comprising an antiferromagnetic layer made of an antiferromagnetic material containing Mn, a magnetization fixed layer made of a ferromagnetic material, a tunnel barrier layer made of a dielectric material, and a magnetization free layer made of a ferro... | 04/15/2008 |
| 7359161 | Magnetic sensor that combines both CPP and CIP modes of operation A magnetic sensor is provided. The magnetic sensor includes a magnetoresistive multi-layered portion that has a first resistance region and a second resistance region. At least two contacts are coupled to the magnetoresistive multi-layered portion. A sensing current... | 04/15/2008 |
| 7355822 | Superparamagnetic field sensing device A ferromagnetic thin-film based magnetic field sensor having an electrically insulative intermediate layer with two major surfaces on opposite sides thereof with an initial film of an anisotropic ferromagnetic material on one of those intermediate layer major surfac... | 04/08/2008 |
| 7352542 | Enhanced spin-valve sensor with engineered overlayer formed on a free layer A GMR sensor is disclosed for sensing magnetically recorded information on a data storage medium. The sensor includes a ferromagnetic free layer and a ferromagnetic pinned layer sandwiching an electrically conductive spacer layer. An engineered overlayer is formed o... | 04/01/2008 |
| 7352541 | CPP GMR using Fe based synthetic free layer A current perpendicular to plane (CPP) giant magnetoresistive (GMR) sensor having an antiparallel coupled free layer including a first magnetic layer of Fe and a second magnetic layer of FeXN, where X can be Al or Ta. The first and second magnetic layers of the free... | 04/01/2008 |
| 7352540 | Giant magneto-resistive (GMR) transducer having separation structure separating GMR sensor from head-tape interface A giant magneto-resistive (GMR) transducer for reading data signals magnetically recorded on tape includes a GMR sensor and a separation structure formed on a front edge of the GMR sensor. The GMR sensor reads data signals magnetically recorded on a tape located at ... | 04/01/2008 |
| 7345852 | Magnetoresistive element and magnetic memory device A magnetoresistive element has a ferromagnetic double tunnel junction having a stacked structure of a first antiferromagnetic layer/a first ferromagnetic layer/a first dielectric layer/a second ferromagnetic layer/a second dielectric layer/a third ferromagnetic laye... | 03/18/2008 |
| 7342753 | In-stack biasing of the free layer of a magnetoresistive read element A magnetoresistive read element with improved biasing of the free layer is disclosed. The read element includes a free layer, a spacer layer, a first pinned bias layer, an APC layer, and a second pinned bias layer antiparallel exchange coupled with the first pinned ... | 03/11/2008 |
| 7342748 | System with matrix array of write heads and matrix array of magnetoresistive (MR) read heads The invention provides a system comprising a non-linear array of magnetoresistive (MR) heads arranged in a two-dimensional matrix for reading information stored on magnetic media. The non-linear array of MR heads may comprise a planar array formed by a plurality of ... | 03/11/2008 |
| 7341876 | Anti-parallel tab sensor fabrication A method for fabricating a sensor having anti-parallel tab regions. The method includes forming a free layer having tab areas on opposite sides of an active area, forming a first layer of a carbon composition above the active area of the free layer, the first layer ... | 03/11/2008 |
| 7339769 | Magnetoresistive sensor with antiferromagnetic exchange-coupled structure having underlayer for enhancing chemical-ordering in the antiferromagnetic layer An antiferromagnetically exchange-coupled structure for use in a magnetic device, such as a magnetoresistive sensor, includes an underlayer formed of a chemically-ordered tetragonal-crystalline alloy, a chemically-ordered tetragonal-crystalline Mn-alloy antiferromag... | 03/04/2008 |
| 7336070 | Bridge circuited magnetic sensor having magneto-resistive element and fixed resistor with the same layer configuration The application provides a magnetic sensor which can suppress an irregularity of a central potential due to a change in a temperature, decrease size of the sensor, and lower the manufacturing cost of the sensor. A magneto-resistive element and fixed resister are pro... | 02/26/2008 |
| 7336449 | Three terminal magnetic sensor (TTM) having a metal layer formed in-plane and in contact with the base region for reduced base resistance A three terminal magnetic sensor (TTM) has a base region, a collector region which is adjacent the base region, an emitter region, and a barrier region which separates the emitter region from the base region. A sensing plane is defined along sides of the base region... | 02/26/2008 |
| 7331100 | Process of manufacturing a seed/AFM combination for a CPP GMR device An improved seed/AFM structure is formed by first depositing a layer of tantalum on the lower shield. A NiCr layer is then deposited on the Ta followed by a layer of IrMn. The latter functions effectively as an AFM for thicknesses in the 40-80 Angstrom range, enabli... | 02/19/2008 |
| 7327539 | CPP giant magnetoresistive head with large-area metal film provided between shield and element A CPP giant magnetoresistive (GMR) head includes lower and upper shield layers; and a GMR element disposed between the upper and lower shield layers and comprising a pinned magnetic layer, a free magnetic layer, and a nonmagnetic layer disposed between the pinned ma... | 02/05/2008 |
| 7324310 | Self-pinned dual CPP sensor exchange pinned at stripe back-end to avoid amplitude flipping A current perpendicular to plane (CPP) giant magnetoresistive (GMR) sensor having a pinning structure recessed disposed behind the sensor in the stripe height direction. ... | 01/29/2008 |
| 7324313 | Read sensor having an in-stack biasing structure and an AP coupled free layer structure for increased magnetic stability Current-perpendicular-to-the-plane (CPP), current-in-to-the-plane (CIP), and tunnel valve type sensors are provided having an antiparallel (AP) coupled free layer structure, an in-stack biasing structure which stabilizes the AP coupled free layer structure and a non... | 01/29/2008 |
| 7324312 | Sensor with in-stack bias structure providing exchange stabilization A magnetic head having an in-stack bias structure and a free layer structure. The in-stack bias structure includes an antiferromagnetic layer; a first bias layer positioned towards the antiferromagnetic layer, a magnetic moment of the first bias layer being pinned b... | 01/29/2008 |
| 7323113 | Pattern transfer with self-similar sacrificial mask layer and vector magnetic field sensor A method is provided for producing a lithographic pattern using a mask that includes the same materials as the material to be etched, allowing the pattern to be transferred and the etch mask to be removed in one step. In accordance with features of the invention, th... | 01/29/2008 |
| 7312959 | Magnetic sensor having antiferromagnetic layers and free magnetic layer and method for manufacturing magnetic sensor At two sides of a multilayer film including a free magnetic layer, a first non-magnetic material layer, and a fixed magnetic layer, extension portions extending from the fixed magnetic layer are formed. At lower sides of the extension portions, a pair of first antif... | 12/25/2007 |
| 7301735 | Higher flip threshold structure for in-stack bias layer A magnetoresistive sensor having an in stack bias layer extending beyond the track width of the sensor for improved free layer stability and resistance against amplitude flipping. ... | 11/27/2007 |
| 7298595 | Differential GMR sensor with multi-layer bias structure between free layers of first and second self-pinned GMR sensors A method for providing a self-pinned differential GMR sensor and self-pinned differential GMR sensor. The differential GMR head includes two self-pinned GMR sensors separated by a gap layer. The gap layer may act as a bias structure to provide antiparallel magnetiza... | 11/20/2007 |
| 7292415 | Ferromagnetic layered material having reliable uniaxial anisotropy A magnetoresistive film includes a pinned ferromagnetic layer, a free ferromagnetic layer, an intermediate layer interposed between the pinned and free ferromagnetic layers, and a pinning layer contacting the pinned ferromagnetic layer. The free ferromagnetic layer ... | 11/06/2007 |
| 7292416 | CPP magneto resistive head with decreased variation in asymmetry and output A magnetoresistive head comprises a free magnetic layer that has first and second free magnetic films sandwiching a non-magnetic intermediate film therebetween, the respective magnetizing directions of the first and the second free magnetic films are antiparallel. T... | 11/06/2007 |
| 7289303 | Spin valve sensors having synthetic antiferromagnet for longitudinal bias Magnetoresistive (MR) sensors are disclosed having mechanisms for reducing edge effects such as Barkhausen noise. The sensors include a pinned layer and a free layer with an exchange coupling layer adjoining the free layer, and a ferromagnetic layer having a fixed m... | 10/30/2007 |
