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| Number | Title | Issue Date |
| 7777607 | Resistor having a predetermined temperature coefficient A material stack has an electrical resistance generally the same in the presence of a magnetic field and in the presence of no magnetic field. The electrical resistance of the material stack has a temperature coefficient generally the same as a magnetoresistance ele... | 08/17/2010 |
| 7733210 | Magnetic field detector and manufacturing method thereof A magnetic field detector includes: a magnet; a detecting magnetic resistance element having a layer structure containing a ferromagnetic layer, the resistance being changed when a direction of magnetization of the ferromagnetic layer is changed; and a reference mag... | 06/08/2010 |
| 7589612 | Current sensor A current sensor that is compact can detect with high sensitivity and high accuracy a magnetic field generated by a current. The current sensor has a thin film coil including turn portions extending in an X-axis direction at a second layer, and a first magnetoresist... | 09/15/2009 |
| 7504927 | Current sensor The present invention provides a current sensor capable of sensing a current to be detected with high precision while realizing a compact configuration. The current sensor includes a first MR element including element patterns disposed at a first level, a second MR ... | 03/17/2009 |
| 7501928 | Current sensor The present invention provides a compact current sensor capable of measuring a current to be detected with high precision. A current sensor includes: a first magnetoresistive element including a plurality of element patterns which extend in an X axis direction at a ... | 03/10/2009 |
| 7495541 | Current sensor The present invention provides a current sensor capable of sensing a current to be detected with high precision. The current sensor includes a bus line which extends in an X direction at a first level and to which a current to be detected is supplied, a first magnet... | 02/24/2009 |
| 7428128 | High read output, high sensitivity magnetic sensing element A magnetic sensing element has pinned magnetic layers disposed on the two sides of a free magnetic layer in the track width direction with nonmagnetic conductive layers therebetween, and an electric current flows through these layers in parallel to the surfaces. The... | 09/23/2008 |
| 7426098 | Magnetoresistive element having three-layer buffer layer, magnetic head, magnetic reproducing apparatus, and magnetic memory A magnetoresistive element includes a magnetoresistive film having a magnetization pinned layer whose magnetization is substantially pinned to one direction, a nonmagnetic intermediate layer, and a magnetization free layer whose magnetization is changed in direction... | 09/16/2008 |
| 7417442 | Method and apparatus for testing tunnel magnetoresistive effect element, manufacturing method of tunnel magnetoresistive effect element and tunnel magnetoresistive effect element A method for testing a TMR element includes a step of measuring a plurality of resistances of the TMR element by feeding a plurality of sense currents with different current values each other through the TMR element, a step of calculating a ratio of change in resist... | 08/26/2008 |
| 7414397 | Angle switch device with magnetoresistive effect element An angle switch device includes at least one MR element with a pinned layer and a free layer, and a magnet section. A relative angle between the magnet section and a lamination plane of the at least one MR element in a plane that contains a fixed magnetization direc... | 08/19/2008 |
| 7405908 | Magnetic head with improved free magnetic layer biasing for thinner CPP sensor stack In a CPP magnetic head a free magnetic layer and a magnetic biasing layer are disposed within a central layer stack. To pin the magnetization of the bias layer, an antiferromagnetic (AFM) layer is fabricated on the sides of the central stack. The AFM layer may be co... | 07/29/2008 |
| 7372116 | Heat assisted switching in an MRAM cell utilizing the antiferromagnetic to ferromagnetic transition in FeRh A magnetic memory cell for use in a magnetic random access memory array that uses the antiferromagnetic to ferromagnetic transition properties of FeRh to assist in the control of switching of the memory cell. ... | 05/13/2008 |
| 7370515 | Probes for use in scanning probe microscopes and methods of fabricating such probes Probes for use in a scanning probe microscope and methods of manufacturing such probes. Each probe includes a probe tip having a substantially vertical sidewall formed by an anisotropic etching process and a flared post underlying the probe tip that is formed by an ... | 05/13/2008 |
| 7362548 | Magnetic sensor and manufacturing method therefor A magnetic sensor comprises magnetoresistive elements and permanent magnet films, which are combined together to form GMR elements formed on a quartz substrate having a square shape, wherein the permanent magnet films are paired and connected to both ends of the mag... | 04/22/2008 |
| 7358846 | Magnetic spin valve with a magnetoelectric element The present invention provides systems and method utilizing magnetoelectric materials such as Cr2O3 to construct tunneling magnetoresistence and/or giant magnetoresistence structures for memory and/or logical circuitry. An applied voltage diffe... | 04/15/2008 |
| 7358722 | Integrated three-dimensional magnetic sensing device and method to fabricate an integrated three-dimensional magnetic sensing device An integrated three-dimensional magnetic or any field sensing device and a method to fabricate an integrated three-dimensional magnetic sensing device is presented. An integrated three-dimensional magnetic sensing device comprises an apparatus that defines at least ... | 04/15/2008 |
| 7359162 | Magnetoresistance effect element, magnetic head and magnetic recording and/or reproducing system There is provided a practical magnetoresistance effect element which has an appropriate value of resistance, which can be sensitized and which has a small number of magnetic layers to be controlled, and a magnetic head and magnetic recording and/or reproducing syste... | 04/15/2008 |
| 7358724 | Integrated magnetic flux concentrator A method and apparatus provide a substrate having a depression into which a magnetic material is disposed, forming a magnetic flux concentrator and/or a permanent magnet. A magnetic field sensing element can be disposed proximate to the depression. ... | 04/15/2008 |
| 7358723 | Magnetoresistive sensor What is described is a magnetoresistive sensor for operation with a magnetized encoder, which is equipped with a zone with magnetic north and south poles arranged alternately along a direction of motion, comprising a Wheatstone bridge configuration with a first brid... | 04/15/2008 |
| 7355822 | Superparamagnetic field sensing device A ferromagnetic thin-film based magnetic field sensor having an electrically insulative intermediate layer with two major surfaces on opposite sides thereof with an initial film of an anisotropic ferromagnetic material on one of those intermediate layer major surfac... | 04/08/2008 |
| 7351484 | High field contrast magnetic stampers/imprinters for contact patterning of magnetic media A high field contrast magnetic stamper/imprinter for use in patterning of magnetic and magneto-optical (MO) recording media by contact printing, comprises: (a) a layer of a magnetic material having a high saturation magnetization B... | 04/01/2008 |
| 7349186 | Magnetic read head A TMR head capable of reconciling high output with high band width is implemented. To that end, two multilayered films each comprised of an insulating layer and a ferromagnetic layer are formed at different locations on an electrode layer, and a current is caused to... | 03/25/2008 |
| 7341887 | Integrated circuit die configuration for packaging Integrate circuit die terminal arrangements and configurations for mounting an integrate circuit die on a package substrate to reduce package transmission paths. In one embodiment, terminals for signals sensitive to trace length outside a die are arranged at the cor... | 03/11/2008 |
| 7339769 | Magnetoresistive sensor with antiferromagnetic exchange-coupled structure having underlayer for enhancing chemical-ordering in the antiferromagnetic layer An antiferromagnetically exchange-coupled structure for use in a magnetic device, such as a magnetoresistive sensor, includes an underlayer formed of a chemically-ordered tetragonal-crystalline alloy, a chemically-ordered tetragonal-crystalline Mn-alloy antiferromag... | 03/04/2008 |
| 7336451 | Magnetic sensing element containing half-metallic alloy A pinned magnetic layer 20 and a free magnetic layer 26 include a magnetic portion 17 and a magnetic sublayer 22, respectively, each comprising a half-metallic ferromagnetic alloy. Since each of the magnetic portion 17 and magnetic... | 02/26/2008 |
| 7336453 | Magnetic sensing element including pinned layer and/or free layer composed of [110] crystal planes-oriented Heusler alloy A magnetic sensing element using a thin film composed of an adequately crystallized Heusler alloy is provided. At least one of free magnetic layer and pinned magnetic layer includes a Heusler alloy layer. The Heusler alloy layer has a body-centered cubic (bcc) struc... | 02/26/2008 |
| 7336064 | Apparatus for current measurement The apparatus for measurement of a current which is flowing in an axially elongated electrical conductor at a first electrical potential. The apparatus contains at least one associated sensor element associated with the conductor that is electrically isolated from i... | 02/26/2008 |
| 7330339 | Structure providing enhanced self-pinning for CPP GMR and tunnel valve heads A magnetic head having improved self-pinning. The head includes a sensor having an antiparallel (AP) pinned layer structure, where the AP pinned layer structure includes at least two pinned layers having magnetic moments that are self-pinned antiparallel to each oth... | 02/12/2008 |
| 7324312 | Sensor with in-stack bias structure providing exchange stabilization A magnetic head having an in-stack bias structure and a free layer structure. The in-stack bias structure includes an antiferromagnetic layer; a first bias layer positioned towards the antiferromagnetic layer, a magnetic moment of the first bias layer being pinned b... | 01/29/2008 |
| 7323870 | Magnetoresistive sensor element and method of assembling magnetic field sensor elements with on-wafer functional test A method of performing an on-wafer function testis provided for multiple magnetic field sensor elements on a wafer. Each sensor element includes a magnetic-field-sensitive structure and a current conductor structure. The current conductor structure provides a test m... | 01/29/2008 |
| 7320896 | Infrared radiation detector Electronic devices are disclosed that may be used for infrared radiation detection. An example electronic device includes a substrate, a transistor included in the substrate and a silicon-germanium (Si—Ge) structural layer coupled with the transistor. The structur... | 01/22/2008 |
| 7318962 | Magnetically directed self-assembly of molecular electronic junctions comprising conductively coated ferromagnetic microparticles A device having a substrate, a pair of ferromagnetic leads on a surface of the substrate, laterally separated by a gap, and one or more ferromagnetic microparticles comprising a conductive coating at least partially within the gap. The conductive coating forms at le... | 01/15/2008 |
| 7319262 | MRAM over sloped pillar An apparatus including a pillar located over a substrate and having at least one sloped surface oriented at an acute angle relative to the substrate. The apparatus also includes an MRAM stack substantially conforming to the sloped surface, the MRAM stack thereby als... | 01/15/2008 |
| 7317369 | Superconductor magnet coil configuration A superconducting magnet coil configuration comprising at least one section of a superconducting strip conductor, which is continuously wound in a cylindrical winding chamber (1) between two end flanges (2, 3) in several solenoid-like layers is charact... | 01/08/2008 |
| 7310207 | Magnetic sensing element including magnetic layer composed of Heusler alloy disposed on underlayer having {111}-oriented fcc structure A magnetic sensing element using a Heusler alloy is provided. In the magnetic sensing element, a free magnetic layer composed of a Heusler alloy layer is disposed on a nonmagnetic layer that corresponds to an fcc layer having the face-centered cubic (fcc) structure.... | 12/18/2007 |
| 7295407 | Magnetoresistance effect element, magnetic head and magnetic reproducing system A magnetoresistance effect element a stacked film including a magnetization fixed layer in which the direction of magnetization is substantially fixed to one direction, and a magnetization free layer in which the direction of magnetization varies in response to an e... | 11/13/2007 |
| 7292415 | Ferromagnetic layered material having reliable uniaxial anisotropy A magnetoresistive film includes a pinned ferromagnetic layer, a free ferromagnetic layer, an intermediate layer interposed between the pinned and free ferromagnetic layers, and a pinning layer contacting the pinned ferromagnetic layer. The free ferromagnetic layer ... | 11/06/2007 |
| 7280029 | Laminated ferrimagnetic thin film, and magneto-resistive effect element and ferromagnetic tunnel element using this thin film A laminated ferrimagnetic thin film consists of two ferromagnetic layers and a non-magnetic intermediate layer sandwiched therebetween. The respective ferromagnetic layers are magnetically coupled in an anti-ferromagnetic manner through the non-magnetic intermediate... | 10/09/2007 |
| 7279891 | Permalloy bridge with selectable wafer-anistropy using multiple layers A magnetic sensing method and apparatus include a plurality of bridge circuits, wherein each bridge circuit or element within a bridge is formed on a separate permalloy layer comprising a plurality of permalloy bridge runners. The permalloy bridge runners can be sel... | 10/09/2007 |
| 7271698 | Laminated ferrimagnetic thin film, and magneto-resistive effect element and ferromagnetic tunnel element using this thin film A laminated ferrimagnetic thin film consists of two ferromagnetic layers and a non-magnetic intermediate layer sandwiched therebetween. The respective ferromagnetic layers are magnetically coupled in an antiferromagnetic manner through the non-magnetic intermediate ... | 09/18/2007 |
