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| Number | Title | Issue Date |
| 4464630 | Transimpedance pre-amplifier A transimpedance pre-amplifier is used in connection with optical detectors and is designed to obtain low noise, low distortion and flat frequency response simultaneously. The amplifier design accomplishes low distortion and flat frequency response over a... | 08/07/1984 |
| 4454481 | Shielded amplifier A shielded amplifier adapted for use with an infrared detector array mounted on a focal plane and operating in a cryogenically cooled environment and adapted to receive a signal output from a high impedance signal source, the shielded amplifier being requ... | 06/12/1984 |
| 4427991 | High frequency semiconductor device A high frequency, hermetically-sealed, semiconductor device with the capability of being cascade-connected with corresponding devices in an advantageous manner. The device consists of a function element which includes at least one semiconductor and other ... | 01/24/1984 |
| 4423388 | RF Amplifier circuit employing FET devices An RF amplifier including first and second FETs which are interconnected to function as a single transistor with improved gate. An input signal is applied across the gate and source of the first FET, and an output signal is obtained across the drain and s... | 12/27/1983 |
| 4417240 | Plural output switched current amplifier as for driving light emitting diodes A plural-output switched current source, as may be used to provide current drive to inidividual display segments of an LED display. Each respective current source output is selectively operable from a respective low level I2 L signal source. Me... | 11/22/1983 |
| 4414514 | Two signal amplifying system A two signal amplifying system is constructed of first and second BTL amplifiers each including a phase splitter and first and second push-pull output circuits. In each of the first and second push-pull output circuits, output transistors are connected be... | 11/08/1983 |
| 4403240 | Integrated circuit with at least three ground pads A semiconductor integrated circuit device for an amplifier circuit including a semiconductor substrate in which an audio amplifier circuit is formed in an integrated circuit form, at least one first wire bonding pad which is formed on said semiconductor s... | 09/06/1983 |
| 4403200 | Output stage for operational amplifier An operational amplifier includes an input stage, an output stage including first, second and third NPN output transistors, and an intermediate stage including first and second emitter follower transistors. The first NPN output transistor sources load cur... | 09/06/1983 |
| 4394625 | Semiconductor integrated circuit device A semiconductor integrated circuit device including a power amplifier circuit which includes a first PNP transistor, first NPN transistor, second PNP transistor and second NPN transistor which are formed in a common semiconductor substrate. The first PNP ... | 07/19/1983 |
| 4374364 | Darlington amplifier with excess-current protection A Darlington amplifier comprising an auxiliary transistor (16) for overload protection. The base of the auxiliary transistor is connected to a tapping (17) provided on a resistor (12) included between the emitter and base of the output transistor (11) of ... | 02/15/1983 |
| 4371847 | Data transmission link A method and apparatus for altering the apparent electrical characteristic of a distributed electrical component in an integrated circuit is disclosed. In one form a distributed load resistor is sunk into a parallel distributed guard resistor. The mutual ... | 02/01/1983 |
| 4370627 | Integrated injection logic amplifier and oscillator circuits An oscillation circuit including an amplifier portion wherein the collector of a first switching transistor has a load connected thereto, means is provided for transmitting an output of the collector of the first switching transistor to the base thereof, ... | 01/25/1983 |
| 4365208 | Gain-controlled amplifier using a controllable alternating-current resistance A gain-controlled amplifier is provided which employs a controllable alternating-current resistance device. The device is constructed in a similar manner as a vertical PNP transistor, having an emitter region of high conductivity P+ material, a P type col... | 12/21/1982 |
| 4353047 | (1-x)BaO.xTiO2 System dielectric material for use in a microwave device The present invention provides a dielectric material adapted for microwave integrated circuits (MIC) and an electric circuit making use of said dielectric material. More particularly, an oxide dielectric material principally consisting of (1-x)BaO.xTiO | 10/05/1982 |
| 4341963 | Integrated circuit for chip op/amp interface An integrated circuit including a charge-coupled device for accumulating charge in a potential well and pair of metal-oxide semiconductor (MOS) transistors connected to form a differential amplifier. The gate of one transistor is coupled to the CCD potent... | 07/27/1982 |
| 4327332 | Circuit arrangement useful in developing decoupled operating voltages for IF amplifier stages of an integrated circuit In an integrated circuit structure including IF amplifier stages coupled in cascade by d-c blocking capacitors to restrict the noise bandwidth of an FM receiver in which it is employed and receiving power from a common power supply line, separate operatin... | 04/27/1982 |
| 4321428 | Acoustic monolithic power semiconductor integrated circuit and acoustic system using the same An acoustic monolithic IC, which is enabled by a simple modification of the external circuit thereof to realize either the amplification of the left and right channels of stereophonic signals or the application to a balanced transformer-less (BTL) amplifi... | 03/23/1982 |
| 4297647 | Hybrid integrated circuit and a method for producing the same A hybrid integrated circuit for high output power having a conductive pattern on a ceramic substrate, a lead frame connected to said pattern, and electronic components mounted on said pattern wired with one another, has been found. When said conductive pa... | 10/27/1981 |
| 4286227 | Transistor amplifying circuit for preventing the operation of an amplifying transistor in the quasi-saturation region The cut-off frequency of a transistor drops remarkably when the collector-emitter voltage of the transistor is driven into the quasi-saturation region of about 1 V. To prevent this problem, the collector-emitter voltage of the transistor is detected and c... | 08/25/1981 |
| 4276516 | Thermal stress reduction in IC power transistors In an integrated circuit class B audio output device the transistors are fabricated as plural parallel connected sections. The two output transistors have their sections interdigitated so that adjacent sections are not turned on simultaneously. This leads... | 06/30/1981 |
| 4253033 | Wide bandwidth CMOS class A amplifier A CMOS inverter is coupled to drive a bipolar transistor emitter follower which has a field effect transistor load. The load transistor is provided with a d-c bias that causes the circuit to function as a class A amplifier. The amplifier has a gain-band-w... | 02/24/1981 |
| 4247827 | Surface acoustic wave filter arrangement A surface acoustic wave filter arrangement is provided in which both filter and associated driving amplifier are arranged in the same integrated circuit package.... | 01/27/1981 |
| 4247826 | Semiconductor integrated amplifier A semiconductor integrated amplifier having a p-channel type MISFET and an n-channel type MISFET which are integrated in a single semiconductor substrate, a load resistance connected between the drain regions of the MISFETs, a power source to which the MI... | 01/27/1981 |
| 4240042 | Bandwidth limited large signal IC amplifier stage An amplifier stage is disclosed having junction capacitors for by-passing high frequency signals without introducing substantial signal nonlinearities. A pair of similar serially connected diodes are reverse biased between the amplifier supply potentials.... | 12/16/1980 |
| 4227157 | Frequency compensated high frequency amplifiers The disclosed amplifier includes first and second gain stages and first and second frequency compensating capacitors. The second gain stage has a first high impedance node coupled to the first gain stage, a second high impedance node, a first circuit coup... | 10/07/1980 |
| 4220932 | Buffer amplifier A buffer amplifier is described for use in an integrated circuit in which a siganl from a processing circuit is coupled by the buffer amplifier to an output pin on the integrated circuit. The buffer amplifier includes a pair of transistors, the first of w... | 09/02/1980 |
| 4215322 | High frequency oscillating circuit using AT cut quartz crystal vibrator A high frequency oscillating circuit comprises an integrated circuitry composed of first and second lateral type transistors and a longitudinal type junction field effect transistor formed in a semiconductor layer of low impurity concentration epitaxially... | 07/29/1980 |
| 4210875 | Integrated amplifier with adjustable offset voltage An operational amplifier including two parallel transistors in each of the two current paths with one of the transistors being connected to the current path by a fusible element and the other transistor being connected to the path by an impedance which do... | 07/01/1980 |
| 4209754 | Ceramic capacitors A ceramic capacitor with at least one semiconductor device mount hole, comprising a metal substrate and a dielectric ceramic layer provided with electrode layer on its surfaces and mounted on the substrate. At least the lateral surface of the mount hole i... | 06/24/1980 |
| 4199733 | Extended-drain MOS mirrors An improved current amplifier, of the type having input, output and common terminals and which is subject to having widely dissimilar voltages at its input and output terminals has field-effect master and slave transistors formed in a region of semiconduc... | 04/22/1980 |
| 4190808 | Amplifier-oscillator frequency multiplier apparatus An amplifier-oscillator frequency multiplier apparatus utilizing a pair of servo-connected amplifiers which are electronically switchable to provide either a coherent amplifier or a non-coherent oscillator.... | 02/26/1980 |
| 4189682 | Microwave FET power circuit A field effect transistor (FET) is comprised of a plurality of unit transistors having a common gallium arsenide substrate with an N-type active region. Each unit transistor is comprised of a unit gate, a unit drain and a unit source. The FET is mounted i... | 02/19/1980 |
| 4184124 | Operational amplifier An operational amplifier wherein each of the active elements is comprised of complimentary coupled pairs of insulated gate type field effect transistors is provided. A first active stage and a second active stage are coupled together to perform a predeter... | 01/15/1980 |
| 4157513 | Protective system for power stage of monolithic circuitry A power transistor in the final stage of an IC amplifier feeding a reactive load, such as a loudspeaker, has an emitter resistor connected across the input of a monitoring transistor by way of a diode, the monitoring transistor being part of a protective ... | 06/05/1979 |
| 4152662 | Preamplifier having integrated circuitry In a preamplifier having integrated circuitry, the improvement where the active elements of the first stage amplification of the preamplifier and the resistor which establishes the current flowing through these active elements are mounted on the outside o... | 05/01/1979 |
| 4140922 | Amplifier stage for the current supply of I2 L circuits An amplifier stage is provided for supplying differing currents to integrated injection logic I2 L circuits. The amplifier stage has a current hogging injection logic input CHIL gate, at least one further gate, and a CHIL output gate. Each of t... | 02/20/1979 |
| 4134080 | Low inductance resistor A low inductance resistor comprising a metalized, planar silicon wafer, positioned beneath the emitter tabs of an RF power transistor to provide dc balancing and stabilization and thus eliminate the need for more costly collector feedback circuits.... | 01/09/1979 |
| 4112386 | Modular radio frequency amplifier having a gain variable by external passive component selection A broad-band radio-frequency amplifier is characterized by a gain which may be adjusted over a relatively large range, and which remains stable over the range of gain adjustments. The amplifier includes first and second transistor pairs each arranged in a... | 09/05/1978 |
| 4107725 | Compound field effect transistor A horizontal junction-type field effect transistor having a saturated drain current to drain voltage characteristic and constituting an input transistor and a vertical junction-type field effect transistor having an unsaturated drain current to drain volt... | 08/15/1978 |
| 4100431 | Integrated injection logic to linear high impedance current interface An interface circuit for interconnecting an integrated injection logic (I2 L) portion of an integrated circuit to a linear portion of an integrated circuit. The circuit transfers both logic information and I2 L current level referenc... | 07/11/1978 |
