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| Number | Title | Issue Date |
| 8169252 | Low voltage drop closed loop unidirectional electronic valve A low voltage drop unidirectional electronic valve constituted of: a first terminal; a second terminal; a first electronically controlled switch coupled between the first terminal and the second terminal; and a first charge pump arranged to close the first electroni... | 05/01/2012 |
| 7944268 | Switch circuit, variable capacitor circuit and IC of the same A first terminal T1 is connected to the drain (or the source) of a MOS-FET (Q11), whose back gate is separated, through a capacitor C11. The MOS-FET (Q11) is connected at the source (or the drain) thereof to a second terminal T2. T... | 05/17/2011 |
| 7932769 | Protected power devices A power insulated gate field effect transistor has main cells (2) controlled by a main cell insulated gate and sense cells (4) controlled by a sense cell insulated gate. A sample and hold circuit (10, 50) is arranged to operate in a plurality of... | 04/26/2011 |
| 7893751 | Method and circuit for protecting a MOSFET An integrated circuit includes a transistor. During operation a current slew-rate is determined based on a duration the transistor has been conducting and a current flowing through the transistor. The transistor can then be controlled to switch to its non-conducting... | 02/22/2011 |
| 7834678 | Circuit arrangement and method of driving a circuit arrangement The present invention relates to controlling switches in a series connection of electrical devices, in particular to a circuit arrangement, and method of operating same, in which a transistor switch (44, 54) is used to control operation of the devices (12,... | 11/16/2010 |
| 7746158 | Driving device of voltage drive type semiconductor device A driving device of an IGBT includes a high potential side switch device group having a plurality of switch devices and, one end of each switch device being connected to a high potential side; a low potential side switch device group having a plurality of switch dev... | 06/29/2010 |
| 7741897 | Method and apparatus for self gate pumped NMOS high speed switch A method and apparatus for self gate pumped NMOS high speed switch have been disclosed. ... | 06/22/2010 |
| 7710189 | Semiconductor device for RF switching A semiconductor switch according to an embodiment of the invention includes resistive members connected with a source and a drain witch are n-type diffusion layers formed in a P-well of an n-type MOSFET. When a gate of the n-type MOFET is turned off, a positive volt... | 05/04/2010 |
| 7679425 | Turn-off of gate-controlled switch A gate-controlled switch configuration comprising a gate-controlled switch (V4) and a gate driver system (Ctrl, D1, D2, V1, V2), which in its first functional state is configured to change the amount of charge (Qgate) in the gate (... | 03/16/2010 |
| 7592853 | Drive circuit for insulated gate device A drive circuit for an insulated gate device includes a constant current source generating a constant current, and a switching circuit, wherein a gate of the insulated gate device is connected to a power supply potential side via the constant current source at the t... | 09/22/2009 |
| 7570102 | Gate driving circuit for driving a gate electrode of an electric power switching element with simple structure A one mode of a gate driving circuit that drives a gate electrode of an electric power switching element (9), comprising drive means (6) configured to supply to the gate electrode a current in accordance with a voltage applied across the principal elec... | 08/04/2009 |
| 7443224 | Multi-threshold MIS integrated circuit device and circuit design method thereof On a chip 50A, disposed are macro cell 20A not including a virtual power supply line and a leak-current-shielding MOS transistor of a high threshold voltage, and a leak-current-shielding MOS transistor cell 51 of the high threshold voltage. The ... | 10/28/2008 |
| 7439582 | Semiconductor device with sense structure A power semiconductor device is described with a plurality of cells divided into power cells (14) and sense cells (16). A plurality of groups (30, 32) of sense cells (16) are provided. The device allows for compensation of effects caused ... | 10/21/2008 |
| 7427887 | Open drain driver, and a switch comprising the open drain driver An open drain driver (7) selectively switches a MOSFET switch (MN1) which is passively held in the conducting state into the non-conducting state. The MOSFET switch (MN1) switches an AC analogue input signal on a main input terminal (3) t... | 09/23/2008 |
| 7397290 | Method and relative circuit for generating a control voltage of a synchronous rectifier A control voltage for a synchronous rectifying transistor is generated with the desired anticipation time. The anticipation time is continuously controlled with a closed-loop technique by comparing it with the duration of a reference pulse. The resulting error signa... | 07/08/2008 |
| 7372685 | Multi-fault protected high side switch with current sense An integrated high side switch with multi-fault protection. When a fault condition is detected, the switch is turned off. The switch includes a pair of transistors that are connected such that the source of the first transistor is connected with the source of the se... | 05/13/2008 |
| 7368957 | Capacitively coupled floating gate driver High-performance low-power isolated bootstrapped gate drive apparatus and methods are disclosed for driving high-side and floating transistors. The gate drivers use edge-triggered capacitive-coupled inputs. The gate drivers may include detection and delay circuitry ... | 05/06/2008 |
| 7368972 | Power transistor control device The invention relates to a gate control device 10 of a power semiconductor component 11 of the IGBT type. A ramp generator circuit 20 delivers a reference gate voltage at its output. A stage for the current amplification of the said reference vo... | 05/06/2008 |
| 7368995 | Power amplifier with active bias circuit A power amplifier with an active bias circuit and operating method thereof are provided. The power amplifier comprises a power amplifier transistor and an active bias circuit. The active circuit receives input power and applies a bias voltage to the gate of the powe... | 05/06/2008 |
| 7365559 | Current sensing for power MOSFETs A power MOSFET, comprising main and current mirror MOSFETs, has a current sense resistance coupled between its mirror and source terminals and a monitoring circuit responsive to a first voltage dependent upon current through the current sense resistance. The circuit... | 04/29/2008 |
| 7362148 | Device for controlling a semiconductor element A control device for controlling a load drive semiconductor element for driving a load has a test operation mode for measuring a leak current of the load drive semiconductor element. In the test operation mode, a control terminal of the load drive semiconductor elem... | 04/22/2008 |
| 7356310 | Adaptive radio transceiver with floating MOSFET capacitors An exemplary embodiment of the present invention described and shown in the specification and drawings is a transceiver with a receiver, a transmitter, a local oscillator (LO) generator, a controller, and a self-testing unit. All of these components can be packaged ... | 04/08/2008 |
| 7352232 | Method and apparatus for extending the size of a transistor beyond one integrated circuit A technique for extending the size of a power transistor beyond one integrated circuit is disclosed. An example apparatus includes a first integrated circuit chip having a first switch, which includes first, second and third terminals. The first integrated circuit c... | 04/01/2008 |
| 7339413 | Clock generator and organic light emitting display (OLED) including the clock generator A clock generator, which can be included in an Organic Light Emitting Display (OLED), includes four switching units and two inverters. Each of the switching units includes two transistors. Transistors of two switching units that are connected to a high-level voltage... | 03/04/2008 |
| 7336119 | Gate driver output stage with bias circuit for high and wide operating voltage range A simple, low cost, gate driver and bias circuit provides for a wider operating voltage range exceeding the normal component breakdown voltage of components such as NMOS and PMOS transistors. A CMOS process with an epitaxial layer as bulk and p-type substrate is use... | 02/26/2008 |
| 7336118 | Inverter apparatus To provide a highly reliable inverter apparatus which discriminates long-cycle noise generated by the isolated signal transmission element from short-cycle dv/dt noise and induction noise. A low pass filter, band pass filter, and a switching means are provided betwe... | 02/26/2008 |
| 7332942 | Operation of a half-bridge, in particular a field-effect transistor half-bridge The invention relates to a circuit configuration (1) for controlling the operation of a half-bridge (13) by pulse-width modulation, especially in a synchronous rectifier mode. Said circuit configuration comprises a first terminal connection (23, 25 | 02/19/2008 |
| 7330065 | Inrush current slew control circuit and method Circuitry and methodology for controlling a FET or another transistor device provided to supply power to a circuit board insertable into a live backplane to provide inrush current slew rate control. The FET control circuit is responsive to an input signal variable i... | 02/12/2008 |
| 7304526 | Switching circuit for handling signal voltages greater than the supply voltage Analog bidirectional switches (20) comprising a first (1) and a second (2) transistor function badly in case of the signal voltage at an input or an output of the switch (20) exceeding the supply voltage used for operating the switch (... | 12/04/2007 |
| 7301746 | Thermal shutdown trip point modification during current limit A thermal shutdown circuit for protecting a main FET that conducts a load current ILOAD. A reference circuit provides a temperature current proportional to temperature. A thermal sensor circuit has a resistor and generates an output signal signaling thermal shutdown... | 11/27/2007 |
| 7295366 | Optical integrated device and optical module An optical integrated device includes a plurality of input optical waveguides connected respectively to a plurality of input ports provided on one end face of the optical integrated device, a single output optical waveguide connected to an output port, an optical co... | 11/13/2007 |
| 7295043 | Differential output circuit for improving bandwidth A differential output circuit includes first and second inputs, first and second outputs, a resistor element connected between the outputs, first and second N-channel MISFETs, and first and second P-channel MISFETs. The inputs respectively receive first and second c... | 11/13/2007 |
| 7292088 | Gate driver output stage with bias circuit for high and wide operating voltage range A simple, low cost, gate driver and bias circuit provides for a wider operating voltage range exceeding the normal component breakdown voltage of components such as NMOS and PMOS transistors. A CMOS process with an epitaxial layer as bulk and p-type substrate is use... | 11/06/2007 |
| 7274241 | Global closed loop control system with DV/DT control and EMI/switching loss reduction A gate driver for a power switch, comprising a gate drive circuit coupled to the gate of the power switch for at least one of turning on and turning off the power switch; a gate voltage control circuit in the gate drive circuit for controlling a voltage applied to t... | 09/25/2007 |
| 7274246 | Switching circuit using multiple common-drain JFETs for good heat dissipation capability and small PCB layout area A switching circuit uses multiple common-drain JFETs to serve as the low-side switches of the switching circuit, and each of the low-side JFET is coupled between a high-side switch and a power node. Since a JFET can endure high voltage at both drain side and source ... | 09/25/2007 |
| 7268613 | Transistor switch with integral body connection to prevent latchup A circuit device having a transistor-based switch topology that substantially eliminates the possibility of latchup of the device. A series-connected low voltage threshold (LVT) N-channel transistor and a pull-up resistor are coupled across a switching (P-channel) t... | 09/11/2007 |
| 7265589 | Independent gate control logic circuitry A dynamic logic gate has a dynamic node pre-charged in response to a pre-charge phase of a clock signal and a logic tree with a plurality of logic inputs for evaluating the dynamic node during an evaluate phase of the clock signal in response to a Boolean combinatio... | 09/04/2007 |
| 7265603 | MOSFET gate driver with a negative gate bias voltage A circuit for preventing shoot-through in a high side switching transistor coupled in series with a low side switching transistor across a supply voltage, the circuit comprising a voltage reference circuit having an output providing a reference voltage which is nega... | 09/04/2007 |
| 7253540 | Method for operating a parallel arrangement of semiconductor power switches The invention relates to a method for statically balancing the loading of power semiconductor switches (S1, S2, S3) in a parallel circuit (1). To achieve this in prior art, switching instants of individual switches (S1 | 08/07/2007 |
| 7245163 | Overcurrent limiting controller A semiconductor device controller includes a current supply control unit for controlling a conduction state of a semiconductor device connected to a load in response to a control signal to supply current to the load, a current level judging unit for comparing one or... | 07/17/2007 |
