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| Number | Title | Issue Date |
| 7863961 | Vehicle communication system An ECU serving as a transmission side and an ECU serving as a reception side are coupled to each other through communication lines and junction connectors. A diode in which a direction directed from a negative-side output terminal of the ECU serving as the transmiss... | 01/04/2011 |
| 7443225 | Thermally stable semiconductor power device A semiconductor power device includes a circuit to provide a gate signal wherein the gate signal has a negative temperature coefficient of gate driving voltage for decreasing a gate driving voltage with an increase temperature whereby the semiconductor power device ... | 10/28/2008 |
| 7362126 | Floating CMOS input circuit that does not draw DC current A floating CMOS input circuit is disclosed that does not draw direct current. The floating CMOS input circuit comprises a first inverter circuit that is capable of being coupled to an input voltage (Vin) and an n-channel pull-down transistor (N1) that is coup... | 04/22/2008 |
| 7321257 | Semiconductor device capable of detecting an open bonding wire using weak current An IC chip has a series regulator built therein. A battery voltage is applied to an input pin. An output of a transistor constituting the series regulator occurs at an output pin via an output pad. A feedback signal derived from an output voltage occurs at an end of... | 01/22/2008 |
| 7279952 | Voltage clamp circuit with reduced I/O capacitance A voltage converter includes a first N-channel MOSFET transistor, an inverter, a plurality of serially-connected diodes and a second N-channel MOSFET transistor. The inverter is coupled to the gate of the first N-channel MOSFET transistor to turn on/off the voltage ... | 10/09/2007 |
| 7236043 | Antifuse programming, protection, and sensing device An antifuse programming, protection, and sensing device incorporates a control circuit to program and protect an antifuse. The antifuse, which is initially constructed as a low conductivity path, is programmable to a high conductivity path by application of an eleva... | 06/26/2007 |
| 7199636 | Active diode An active diode including a NMOS transistor having a source terminal, a drain terminal, a gate terminal and a back gate terminal, where the source terminal is connected to the back gate terminal and forms the anode terminal of the active diode, and the drain termina... | 04/03/2007 |
| 7176722 | Low power high performance inverter circuit A low-power, high-performance inverter circuit comprises first and second inverter circuit portions. The first portion comprises a first inverter, including a first pull-up element and a first pull-down element, for inverting an input signal, a first switching eleme... | 02/13/2007 |
| 7135908 | Input stage resistant against high voltage swings An input stage includes a signal input (IN) for receiving an input signal s(t) and a digital input stage (15) designed for operation at a supply voltage (VDD). The input stage (15) includes CMOS transistors, which are sensitive to voltages across trans... | 11/14/2006 |
| 7126148 | Neutron detection based on boron activated liquid scintillation A system for detecting neutron radiation. A liquid cocktail mixture comprised of a neutron absorber and a scintillator is housed in a Teflon® tube having a mirror at one end of the tube and a windowed portal at the other end of the tube. Neutrons that penetrate the... | 10/24/2006 |
| 7046079 | Circuit for generating a reference voltage A circuit for generating a reference voltage of an image sensor is provided. The circuit comprises a signal differential amplifier, a gain amplifier, a source follower and a clamp circuit. The signal differential amplifier is adapted for receiving and comparing a bi... | 05/16/2006 |
| 7035069 | Semiconductor integrated circuit device Into an internal circuit to operate in a high-frequency band, there is incorporated a protective circuit of a multistage connection which is constructed to include a plurality of diode-connected transistors having a low parasitic capacity and free from a malfunction... | 04/25/2006 |
| 6937080 | Current-controlled CMOS logic family Various circuit techniques for implementing ultra high speed circuits use current-controlled CMOS (C3MOS) logic fabricated in conventional CMOS process technology. An entire family of logic elements including inverter/buffers, level shifters, NAND, NOR, X... | 08/30/2005 |
| 6919774 | Broadband PIN diode attenuator bias network Diode network configurations are disclosed in which cathode bias voltage is held substantially constant to provide an attenuator circuit in which return loss is optimized throughout a broad dynamic attenuation range. Preferred embodiments include PIN diodes arranged... | 07/19/2005 |
| 6859084 | Low-power voltage modulation circuit for pass devices Power supply voltages are selectively modulated to correspond with degraded input voltages to a logic device. Modulated power supply voltages are provided to transistors within the logic device, so that the degraded input voltages supplied to the transistors are suf... | 02/22/2005 |
| 6777996 | Radio frequency clamping circuit A clamping circuit (10) including an input/output node (12), adapted to be coupled to the protected circuit or component; a first diode (D1) having an anode connected to the input/output node (12); a second diode (D2) having a cath... | 08/17/2004 |
| 6734715 | Two terminal rectifier using normally off JFET A two terminal semiconductor circuit that can be used to replace the semiconductor diodes used as rectifiers in conventional DC power supply circuits. Three semiconductor circuits that can efficiently supply the DC currents required in both discrete and integrated c... | 05/11/2004 |
| 6639444 | Protection circuit A protection circuit 10 has a diode 31 being connected in parallel to an inductive load 11 and having a forward direction set reverse to the conduction direction of a power supply current and a Zener diode 33 being placed between one terminal of the diode... | 10/28/2003 |
| 6636118 | High-frequency power amplification module and radio communication device In a high frequency power amplifier module of a multi-stage structure in which a plurality of heterojunction bipolar transistors (npn-type HBTs) are cascade-connected, a protection circuit in which a plurality of pn junction diodes are connected in series... | 10/21/2003 |
| 6598171 | Integrated circuit I/O using a high performance bus interface The present invention includes a memory subsystem comprising at least two semiconductor devices, including at least one memory device, connected to a bus, where the bus includes a plurality of bus lines for carrying substantially all address, data and con... | 07/22/2003 |
| 6597228 | Diode-rectifier with non-linear load resistance In a half-wave or multi-path RF diode-rectifier circuit having at least one rectifier diode and at least one output-side charging capacitor, the output is loaded with a non-linear load resistance having approximately the same relative temperature coeffici... | 07/22/2003 |
| 6566936 | Two terminal rectifier normally OFF JFET A two terminal semiconductor circuit that can be used to replace the semiconductor diodes used as rectifiers in conventional DC power supply circuits. Three semiconductor circuits that can efficiently supply the DC currents required in both discrete and i... | 05/20/2003 |
| 6414532 | Gate ground circuit approach for I/O ESD protection An I/O ESD protection circuit is provided utilizing a driver circuit, an ESD protection circuit, a Vcc/Vss protection circuit, and a clamping circuit. The driver circuit and the ESD protection circuit each comprise a NMOS cascode circuit. NMOS transistors... | 07/02/2002 |
| 6414363 | Semiconductor device with power cutting transistors A semiconductor device that operates at high speed using a low voltage power source, in which the output of each gate in the standby state is stable, and which has a delay time that is not affected by the frequency of the input signal. TrQ1 to TrQ8, which... | 07/02/2002 |
| 6411155 | Power integrated circuit A monolithic assembly includes vertical power semiconductor components formed throughout the thickness of a low doped semiconductive wafer of a first conductivity type, whose bottom surface is uniformly coated with a metallization. At least some of these ... | 06/25/2002 |
| 6388516 | Precision high speed magnetic coil driver circuit Accuracy of correction of offset drift with temperature and noise are corrected in a high voltage, high current amplifier is improved by thermal isolation and/or temperature regulation of another amplifier having greater gain and connected to a different ... | 05/14/2002 |
| 6255886 | Method for protecting an integrated circuit during burn-in testing A multi-phase charge pump continuously pumps to establish a DC voltage outside the range of supply and reference voltages. The multi-phase charge pump in one embodiment includes four stages operating in a ring with a four-phase clock. Each stage includes ... | 07/03/2001 |
| 6222412 | Circuit for controlling waveform distortion at a control terminal of a radio frequency transistor The present invention relates to a circuit for controlling waveform distortion resulting from nonlinearity of the impedance of a control terminal (gate or base) capacitance of a transistor, which can be employed in circuits showing a nonlinearity performa... | 04/24/2001 |
| 6218882 | Diode circuit for clamping the signals on a transmission line to a predetermined potential A diode circuit of the present invention comprise an input/output terminal connected to the transmission line, a power supply terminal connected to the power supply, a plurality of diodes connected in series between the input/output terminal and the power... | 04/17/2001 |
| 6181193 | Using thick-oxide CMOS devices to interface high voltage integrated circuits A high voltage tolerant CMOS input/output interface circuit. In this circuit, a process feature called "dual-gate" or "thick-oxide" process is used on any devices that will be exposed to high voltage. The thick-oxide devices have a larger capacitance and ... | 01/30/2001 |
| 6169426 | Back bias voltage level detector A back bias voltage level detector is capable of accurately detecting a back bias voltage level by constantly maintaining a voltage inputted into a comparator using a clamp circuit or a current mirror circuit. The back bias voltage level detector includes... | 01/02/2001 |
| 6130812 | Protection circuit for high speed communication Provided is a protection circuit for high speed signal communication via a two-wire connection between the two output terminals of a PECL driver and the two input terminals of a PECL receiver. The PECL driver and receiver are supplied with power from indi... | 10/10/2000 |
| 6081151 | Electronically controlled variable attenuator The present invention relates to a variable power-attenuation circuit whose attenuation is controlled electronically by a control voltage (Vc). This circuit includes resistive elements (R20, R21, D20, D21) of which at least two resistive elements are diod... | 06/27/2000 |
| 6057725 | Protection circuit for use during burn-in testing A multi-phase charge pump continuously pumps to establish a DC voltage outside the range of supply and reference voltages. The multi-phase charge pump in one embodiment includes four stages operating in a ring with a four-phase clock. Each stage includes ... | 05/02/2000 |
| 6043868 | Distance measurement and ranging instrument having a light emitting diode-based transmitter A circuit and apparatus for generating a light pulse from an inexpensive light-emitting diode (LED) for an accurate distance measurement and ranging instrument comprises an LED and a firing circuit. An optional pre-biasing circuit provides a reverse-bias ... | 03/28/2000 |
| 6028465 | ESD protection circuits Electro-static-discharge (ESD) protection circuits are supplied for inhibiting the destruction of buffers, drivers, logic and memory cells in Metal-Oxide-Semiconductor (MOS) devices such as a CMOS device including Static-Random-Access-Memory (SRAM). This ... | 02/22/2000 |
| 6025746 | ESD protection circuits Electro-static-discharge (ESD) protection circuits are supplied for inhibiting the destruction of buffers, drivers, logic and memory cells in Metal-Oxide-Semiconductor (MOS) devices such as a CMOS device including Static-Random-Access-Memory (SRAM). This ... | 02/15/2000 |
| 5977823 | Semiconductor amplifier circuit A semiconductor amplifier circuit receiving a high frequency signal and amplifying and outputting the signal includes a transistor for receiving the high frequency signal; and a waveform control connected to an input terminal of the transistor and control... | 11/02/1999 |
| 5920206 | Differential ECL In order to provide a differential ECL wherein the malfunction resulting from the constant current source being cut off from the power supply is prevented and wherein the output logic is determined on one side even when input terminals thereof are left op... | 07/06/1999 |
| 5914626 | Voltage clamping circuit for semiconductor devices A voltage clamping circuit for a semiconductor memory device which is capable of rapidly coping with the demand of the user. The voltage clamping circuit includes PMOS transistors connected in series between an external supply voltage terminal and a node ... | 06/22/1999 |
