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| Number | Title | Issue Date |
| 8154210 | Ion implantation ion source, system and method An ion source is disclosed incorporating various aspects of the invention including i) a vaporizer, ii) a vaporizer valve, iii) a gas feed, iv) an ionization chamber, v) an electron gun, vi) a cooled mounting frame, and vii) an ion exit aperture. The ion source incl... | 04/10/2012 |
| 8129913 | Closed electron drift thruster In a closed electron drift thruster, a magnetic circuit for creating a magnetic field in a main annular channel comprises at least one axial magnetic core surrounded by a first coil and an inner upstream pole piece forming a body of revolution, together with a plura... | 03/06/2012 |
| 8072149 | Unbalanced ion source A dual unbalanced indirectly heated cathode (IHC) ion chamber is disclosed. The cathodes have different surface areas, thereby affecting the amount of heat radiated by each. In the preferred embodiment, one cathode is of the size and dimension typically used for IHC... | 12/06/2011 |
| 7872422 | Ion source with recess in electrode An ion source capable of generating and/or emitting an ion beam which may be used to deposit a layer on a substrate or to perform other functions is provided. The ion source includes at least one anode and at least one cathode. In certain example embodiments, the an... | 01/18/2011 |
| 7834554 | Dual mode ion source for ion implantation An ion source is disclosed for providing a range of ion beams consisting of either ionized clusters, such as B2Hx+, B5Hx+, B18Hx+, B18Hx+ | 11/16/2010 |
| 7825601 | Axial Hall accelerator with solenoid field The present patent letters discloses a Hall Current accelerator with a solenoid Hall field, a collimated gas source, an anode, intermediate Hall effect ionization magnetic field structures and intermediate acceleration electrodes. The Hall field in this case is the ... | 11/02/2010 |
| 7800312 | Dual mode ion source for ion implantation A direct electron impact ion source is disclosed that includes a vaporizer for producing a process gas; an electron source for generating an electron beam; and an ionization chamber. The electron source is located outside the ionization chamber. Aligned apertures ar... | 09/21/2010 |
| 7719200 | Plasma generator A plasma generator, comprising a dielectric tube having a first end and a second end, wherein the first end is sealed, but for a gas inlet; at least one first dielectric disk located within the dielectric tube, wherein the first dielectric disk includes at least one... | 05/18/2010 |
| 7609003 | Ion implantation system and control method Ion implantation with high brightness, ion beam by ionizing gas or vapor, e.g. of dimers, or decaborane, by direct electron impact ionization adjacent the outlet aperture (46, 176) of the ionization chamber (80; 175)). Preferably: conditions are mainta... | 10/27/2009 |
| 7589474 | Ion source with upstream inner magnetic pole piece A closed drift ion source is disclosed. The ion source has an open end 1 and a central axis 150 around which are arranged outer magnetic pole piece 3, inner magnetic pole piece 5, anode 2, shield 6 and back magnetic shunt | 09/15/2009 |
| 7579780 | Power supply apparatus A power supply apparatus for controlling an ion accelerator includes a controller configured to adjust magnitude of ion acceleration in the ion accelerator. The controller controls an anode voltage applied to an anode electrode of the ion accelerator, a gas flow rat... | 08/25/2009 |
| 7560870 | Power supply apparatus for ion accelerator A power supply apparatus for controlling a Hall thruster which is an ion accelerator includes an anode power supply for applying anode voltage Va to an anode of the Hall thruster, inner and outer coil power supplies for supplying coil current Ic to each of inner and... | 07/14/2009 |
| 7550927 | System and method for generating ions and radicals A system and method for producing electrons and ions are disclosed. One embodiment includes an outer electrode with a discharge chamber; an inner electrode positioned inside the discharge chamber, the inner electrode positioning forming a upper portion of the discha... | 06/23/2009 |
| 7528550 | Ion implantation system and control method An ion implantation is disclosed that includes an ionization chamber having a restricted outlet aperture and configured so that the gas or vapor in the ionization chamber is at a pressure substantially higher than the pressure within an extraction region into which ... | 05/05/2009 |
| 7479643 | Ion implantation ion source, system and method The ionization chamber is defined by a removable block disposed in heat transfer relationship to a temperature controlled mounting block, preferably the removable block comprised of graphite, silicon carbide or aluminum. The ion source includes a mounting flange for... | 01/20/2009 |
| 7439678 | Magnetic and electrostatic confinement of plasma with tuning of electrostatic field A system and method for containing plasma and forming a Field Reversed Configuration (FRC) magnetic topology are described in which plasma ions are contained magnetically in stable, non-adiabatic orbits in the FRC. Further, the electrons are contained electrostatica... | 10/21/2008 |
| 7439521 | Ion source with removable anode assembly An ion source has a removable anode assembly that is separable and from a base assembly to allow for ease of servicing the consumable components of the anode assembly. Such consumables may include a gas distributor, a thermal control plate, an anode, and one or more... | 10/21/2008 |
| 7439529 | High current density ion source A high current density ion beam source includes a plasma source for generating plasma, a vacuum chamber coupled to the plasma source for extracting an ion beam from the plasma generated by the plasma source, a microwave field source configured to produce a microwave... | 10/21/2008 |
| 7436122 | Helicon hall thruster Atoms of a propellant gas are ionized in a helicon plasma source, preferably in an annular area between inner and outer cylinders. The annular ionization area is aligned with an annular acceleration stage similar to the electrical-magnetic acceleration stage of a Ha... | 10/14/2008 |
| 7435971 | Ion source An exemplary ion source for creating a stream of ions has an aluminum alloy arc chamber body that at least partially bounds an ionization region of the arc chamber. The arc chamber body is used with a hot filament arc chamber housing that either directly or indirect... | 10/14/2008 |
| 7435980 | Electron beam irradiation device An electron beam irradiation device having an electron beam generating unit R, an irradiation chamber E for irradiating an electron beam to a irradiated object F, and an oxygen cutoff section S for blowing inert gas N on an upstream side of the irradiated chamber. T... | 10/14/2008 |
| 7432468 | Plasma processing apparatus and plasma processing method A microwave plasma processing apparatus 100 allows microwaves, passed through a plurality of slots 37, to be transmitted through a plurality of dielectric parts 31 supported by beams 26, raises a gas to plasma with the transmitted microwa... | 10/07/2008 |
| 7432470 | Surface cleaning and sterilization Methods and apparatus are provided for igniting, modulating, and sustaining a plasma for various plasma processes and treatments. Such treatments include cleaning and sterilizing parts. In some embodiments, a plasma is ignited by subjecting a gas in a multi-mode pro... | 10/07/2008 |
| 7425711 | Thermal control plate for ion source A thermal control plate is easily removable and replaceable in an ion source. The ion source has a removable anode assembly, including the thermal control plate, that is separable and from a base assembly to allow for ease of servicing consumable components of the a... | 09/16/2008 |
| 7425709 | Modular ion source A modular ion source design relies on relatively short modular core ALS components, which can be coupled together to form a longer ALS while maintaining an acceptable tolerance of the anode-cathode gap. Many of the modular components may be designed to have common c... | 09/16/2008 |
| 7420181 | Liquid metal ion gun An emitter of a Ga liquid metal ion source is constituted to include W12 of a base material and Ga9 of an ion source element covering a surface as construction materials. By making back-sputtered particles become elements (W and Ga) of the Ga liquid metal ion sour s... | 09/02/2008 |
| 7405415 | Ion source with particular grid assembly An ion source (1) to be used in optical thin film deposition by IAD process includes a discharge chamber (10), a gas source, an actuator (11), a grid assembly (20) and an outer shell (30). The grid assembly includes a screen grid (... | 07/29/2008 |
| 7405411 | Ion source with multi-piece outer cathode In certain example embodiments of this invention, there is provided an ion source including an anode and a cathode. In certain example embodiments, a multi-piece outer cathode is provided. The multi-piece outer cathode allows precision adjustments to be made, thereb... | 07/29/2008 |
| 7405521 | Multiple frequency plasma processor method and apparatus A workpiece is processed with a plasma in a vacuum plasma processing chamber by exciting the plasma at several frequencies such that the excitation of the plasma by the several frequencies simultaneously causes several different phenomena to occur in the plasma. The... | 07/29/2008 |
| 7394202 | Ion implantation system and control method An ion implantation is disclosed that includes an ionization chamber having a restricted outlet aperture and configured so that the gas or vapor in the ionization chamber is at a pressure substantially higher than the pressure within an extraction region into which ... | 07/01/2008 |
| 7391160 | Controlled fusion in a field reversed configuration and direct energy conversion A system and apparatus for controlled fusion in a field reversed configuration (FRC) magnetic topology and conversion of fusion product energies directly to electric power. Preferably, plasma ions are magnetically confined in the FRC while plasma electrons are elect... | 06/24/2008 |
| 7382098 | Plasma producing apparatus and doping apparatus An object of the present invention is to provide an apparatus for producing stable plasma. Another object of the present invention is to provide an apparatus having a long-lasting cathode electrode which is superior in field emission characteristic since the plasma ... | 06/03/2008 |
| 7371991 | Iron beam irradiation device and insulating spacer for the device Disclosed is a structure aimed to reduce the frequency of replacement of an insulating spacer arranged between grids of an ion beam irradiation device. More specifically, disclosed is a so-called insulating spacer arranged in order to maintain insulation between the... | 05/13/2008 |
| 7371992 | Method for non-contact cleaning of a surface A flame torch can be used to clean the surface of a contact-sensitive object, such as a glass optic, extremely thin workpiece, or semiconductor wafer by providing a reactive precursor gas to the feed gases of the torch. Reactive atom plasma processing can be used to... | 05/13/2008 |
| 7372059 | Plasma-based EUV light source Various mechanisms are provided relating to plasma-based light source that may be used for lithography as well as other applications. For example, a device is disclosed for producing extreme ultraviolet (EUV) light based on a sheared plasma flow. The device can prod... | 05/13/2008 |
| 7372195 | Electron beam source having an extraction electrode provided with a magnetic disk element An electron beam source for use in an electron gun. The electron beam source includes an emitter terminating in a tip. The emitter is configured to generate an electron beam. The electron beam source further includes a suppressor electrode laterally surrounding the ... | 05/13/2008 |
| 7365339 | Ion source A cathode holder of a tubular shape is inserted into an opening for a cathode of a plasma generating chamber with a tip of the cathode holder positioned outward from an inner wall surface of the plasma generating chamber. The cathode is held in the cathode holder so... | 04/29/2008 |
| 7365347 | Ion implantation apparatus for use in manufacturing of semiconductor device Disclosed herein is an ion implantation apparatus for use in manufacturing of a semiconductor device, which has a software program including an option for selecting a manipulator, enabling a time for beam tuning to be minimized. The ion implantation apparatus furthe... | 04/29/2008 |
| 7365346 | Ion-implanting apparatus, ion-implanting method, and device manufactured thereby An ion-implanting apparatus and method can dynamically control a beam current value with time and does not change energy. This ion-implanting apparatus controls a dynamic change in beam current value with time by giving feedback on the beam current value measured wi... | 04/29/2008 |
| 7365341 | Gas cluster ion beam emitting apparatus and method for ionization of gas cluster An emitting apparatus 50 has a gas cluster generation chamber 2 and a nozzle 3 as means for generating a gas cluster and emitting the gas cluster to a processing object 10. A group of gas clusters jetted from the nozzle 3 is shaped... | 04/29/2008 |
