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| Number | Title | Issue Date |
| 8179050 | Helicon plasma source with permanent magnets A helicon plasma source has a discharge tube, a radio frequency antenna disposed proximate the discharge tube, and a permanent magnet positioned with respect to the discharge tube so that the discharge tube is in a far-field region of a magnetic field produced by th... | 05/15/2012 |
| 8138677 | Radial hall effect ion injector with a split solenoid field A closed drift Hall Current accelerator with a split solenoid Hall field, a radial injection collimated gas source, an anode, intermediate Hall effect ionization magnetic field structures and intermediate acceleration electrodes, for injection of ions into the solen... | 03/20/2012 |
| 7569995 | Apparatus for magnetic and electrostatic confinement of plasma An apparatus and method for containing plasma and forming a Field Reversed Configuration (FRC) magnetic topology are described in which plasma ions are contained magnetically in stable, non-adiabatic orbits in the FRC. Further, the electrons are contained electrosta... | 08/04/2009 |
| 7439678 | Magnetic and electrostatic confinement of plasma with tuning of electrostatic field A system and method for containing plasma and forming a Field Reversed Configuration (FRC) magnetic topology are described in which plasma ions are contained magnetically in stable, non-adiabatic orbits in the FRC. Further, the electrons are contained electrostatica... | 10/21/2008 |
| 7439521 | Ion source with removable anode assembly An ion source has a removable anode assembly that is separable and from a base assembly to allow for ease of servicing the consumable components of the anode assembly. Such consumables may include a gas distributor, a thermal control plate, an anode, and one or more... | 10/21/2008 |
| 7425711 | Thermal control plate for ion source A thermal control plate is easily removable and replaceable in an ion source. The ion source has a removable anode assembly, including the thermal control plate, that is separable and from a base assembly to allow for ease of servicing consumable components of the a... | 09/16/2008 |
| 7420182 | Combined radio frequency and hall effect ion source and plasma accelerator system This invention features a combined radio frequency (RF) and Hall Effect ion source and plasma accelerator system including a plasma accelerator having an anode and a discharge zone, the plasma accelerator for providing plasma discharge. A gas distributor introduces ... | 09/02/2008 |
| 7411352 | Dual plasma beam sources and method A pair of plasma beam sources are connected across an AC power supply to alternatively produce an ion beam for depositing material on a substrate transported past the ion beams. Each plasma beam source includes a discharge cavity having a first width and a nozzle ex... | 08/12/2008 |
| 7408303 | Pulsed plasma accelerator and method A pulsed plasma accelerator includes two electrodes (1) arranged between dielectric bars (2) made from an ablating material, a discharge channel with an open end part whose walls are defined by the surfaces of electrodes (1) and dielectric bars ... | 08/05/2008 |
| 7404879 | Ionized physical vapor deposition apparatus using helical self-resonant coil Provided is an ionized physical vapor deposition (IPVD) apparatus having a helical self-resonant coil. The IPVD apparatus comprises a process chamber having a substrate holder that supports a substrate to be processed, a deposition material source that supplies a ma... | 07/29/2008 |
| 7405411 | Ion source with multi-piece outer cathode In certain example embodiments of this invention, there is provided an ion source including an anode and a cathode. In certain example embodiments, a multi-piece outer cathode is provided. The multi-piece outer cathode allows precision adjustments to be made, thereb... | 07/29/2008 |
| 7400096 | Large area plasma source An all permanent magnet Electron Cyclotron Resonance, large diameter (e.g., 40 cm) plasma source suitable for ion/plasma processing or electric propulsion, is capable of producing uniform ion current densities at its exit plane at very low power (e.g., below 200 W),... | 07/15/2008 |
| 7391160 | Controlled fusion in a field reversed configuration and direct energy conversion A system and apparatus for controlled fusion in a field reversed configuration (FRC) magnetic topology and conversion of fusion product energies directly to electric power. Preferably, plasma ions are magnetically confined in the FRC while plasma electrons are elect... | 06/24/2008 |
| 7372059 | Plasma-based EUV light source Various mechanisms are provided relating to plasma-based light source that may be used for lithography as well as other applications. For example, a device is disclosed for producing extreme ultraviolet (EUV) light based on a sheared plasma flow. The device can prod... | 05/13/2008 |
| 7371991 | Iron beam irradiation device and insulating spacer for the device Disclosed is a structure aimed to reduce the frequency of replacement of an insulating spacer arranged between grids of an ion beam irradiation device. More specifically, disclosed is a so-called insulating spacer arranged in order to maintain insulation between the... | 05/13/2008 |
| 7363876 | Multi-core transformer plasma source A transformer-coupled plasma source using toroidal cores forms a plasma with a high-density of ions along the center axis of the torus. In one embodiment, cores of a plasma generator are stacked in a vertical alignment to enhance the directionality of the plasma and... | 04/29/2008 |
| 7359177 | Dual bias frequency plasma reactor with feedback control of E.S.C. voltage using wafer voltage measurement at the bias supply output A plasma reactor has a dual frequency plasma RF bias power supply furnishing RF bias power comprising first and second frequency components, f(1), f(2), respectively, and an RF power path having an input end coupled to the plasma RF bias power supply a... | 04/15/2008 |
| 7342361 | Plasma source A plasma source is described. The source includes a reactive impedance element formed from a plurality of electrodes. By providing such a plurality of electrodes and powering adjacent electrodes out of phase with one another, it is possible to improve the characteri... | 03/11/2008 |
| 7342236 | Fluid-cooled ion source An ion source is cooled using a cooling plate that is separate and independent of the anode. The cooling plate forms a coolant cavity through which a fluid coolant (e.g., liquid or gas) can flow to cool the anode. In such configurations, the magnet may be thermally ... | 03/11/2008 |
| 7327089 | Beam plasma source A plasma source which includes a discharge cavity having a first width, where that discharge cavity includes a top portion, a wall portion, and a nozzle disposed on the top portion and extending outwardly therefrom, where the nozzle is formed to include an aperture ... | 02/05/2008 |
| 7323821 | Device for generating and/or influencing electromagnetic radiation from a plasma A device generates and/or influences electromagnetic radiation from a plasma, for the lithographic production of semiconductor elements. For example, the device generates and/or reflects EUV-radiation for EUV-lithography. In a first example, a magnetic means (10 | 01/29/2008 |
| 7319295 | High-frequency power supply structure and plasma CVD device using the same A radio frequency power supply structure and a plasma CVD device comprising the same are provided in which reflection of radio frequency power at a connecting portion where an RF cable connects to an electrode is reduced so that incidence of the radio frequency powe... | 01/15/2008 |
| 7316199 | Method and apparatus for controlling the magnetic field intensity in a plasma enhanced semiconductor wafer processing chamber A magnetic field generator for producing a magnetic field that accelerates plasma formation is placed proximate a reaction chamber of semiconductor substrate processing system. The magnetic field generator has four main magnetic coil sections for producing a magneti... | 01/08/2008 |
| 7315128 | Magnetically enhanced capacitive plasma source for ionized physical vapor deposition A capacitive plasma source for iPVD is immersed in a strong local magnetic field, and maybe a drop-in replacement for an inductively coupled plasma (ICP) source for iPVD. The source includes an annular electrode having a magnet pack behind it that includes a surface... | 01/01/2008 |
| 7312579 | Hall-current ion source for ion beams of low and high energy for technological applications A Hall-current ion source for generation of low and high energy ion beams with selection of magnetic fields and emission currents, where there are utilized low magnetic fields and high emission currents that are higher than discharge currents for low energy ion beam... | 12/25/2007 |
| 7311851 | Apparatus and method for reactive atom plasma processing for material deposition Reactive atom plasma processing can be used to shape, polish, planarize, and clean surfaces of difficult materials with minimal subsurface damage. The apparatus and methods use a plasma torch, such as a conventional ICP torch. The workpiece and plasma torch are move... | 12/25/2007 |
| 7300559 | Filtered cathodic arc deposition method and apparatus An apparatus for the application of coatings in a vacuum comprising a plasma duct surrounded by a magnetic deflecting system communicating with a first plasma source and a coating chamber in which a substrate holder is arranged off of an optical axis of the plasma s... | 11/27/2007 |
| 7285247 | Apparatus and method for operating a fuel reformer so as to purge soot therefrom A method of operating a fuel reformer includes advancing a first air/fuel mixture having a first air-to-fuel ratio into the fuel reformer. The method further includes determining if a soot purge is to be performed and generating a purge-soot signal in response there... | 10/23/2007 |
| 7262555 | Method and system for discretely controllable plasma processing A method and system for plasma generation and processing includes a plurality of beam generators each locally controllable and configured for operation upon a single substrate. A control circuit couples to each of the plurality of beam generators with the control ci... | 08/28/2007 |
| 7259378 | Closed drift ion source A closed drift ion source which includes a channel having an open end, a closed end, and an input port for an ionizable gas. A first magnetic pole is disposed on the open end of the channel and extends therefrom in a first direction. A second magnetic pole disposed ... | 08/21/2007 |
| 7255062 | Pseudo surface microwave produced plasma shielding system A pseudo surface microwave produced plasma shielding system is a simple device that creates a prescribed plasma environment with a prescribed plasma density gradient, and protects an object surrounded by this environment as a shield. Pseudo surface microwaves intera... | 08/14/2007 |
| 7253109 | Method of depositing a tantalum nitride/tantalum diffusion barrier layer system We have discovered a method of providing a thin, approximately from about 2 Å to about 100 Å thick TaN seed layer, which can be used to induce the formation of alpha tantalum when tantalum is deposited over the TaN seed layer. Further, the ... | 08/07/2007 |
| 7253572 | Electromagnetic induced accelerator based on coil-turn modulation An electromagnetic induced accelerator based on coil-turn modulation, including inner and outer cylinders with different diameters, the cylinders being coaxially disposed to form a channel which is a spatial portion therebetween; a discharging coil wound spirally in... | 08/07/2007 |
| 7252745 | Filtered cathodic arc deposition method and apparatus An apparatus for the application of coatings in a vacuum comprising a plasma duct surrounded by a magnetic deflecting system communicating with a first plasma source and a coating chamber in which a substrate holder is arranged off of an optical axis of the plasma s... | 08/07/2007 |
| 7250727 | High power, long focus electron source for beam processing Beam processing methods including e-beam welding and e-beam evaporation for thin film deposition are implemented with a novel high power, long focus electron source. The high power, long focus electron source generates an e-beam. The e-beam is transported through a ... | 07/31/2007 |
| 7247218 | Plasma density, energy and etch rate measurements at bias power input and real time feedback control of plasma source and bias power A plasma reactor process measurement instrument includes an input phase processor receiving wafer bias voltage, current and power and computing an input impedance, an input current and an input voltage to the transmission line; a transmission line processor for comp... | 07/24/2007 |
| 7244281 | Method and apparatus for trapping and purging soot from a fuel reformer A plasma fuel reformer assembly for producing reformate gas includes a fuel reformer having an air/fuel input assembly, an electrode assembly, and a soot trap positioned downstream of the electrode assembly. The electrode assembly includes a first electrode and a se... | 07/17/2007 |
| 7235819 | Semiconductor device having group III nitride buffer layer and growth layers An epitaxial growth system comprises a housing around an epitaxial growth chamber. A substrate support is located within the growth chamber. A gallium source introduces gallium into the growth chamber and directs the gallium towards the substrate. An activated nitro... | 06/26/2007 |
| 7232985 | Controlled fusion in a field reversed configuration and direct energy conversion A system and apparatus for controlled fusion in a field reversed configuration (FRC) magnetic topology and conversion of fusion product energies directly to electric power. Preferably, plasma ions are magnetically confined in the FRC while plasma electrons are elect... | 06/19/2007 |
| 7220937 | Plasma reactor with overhead RF source power electrode with low loss, low arcing tendency and low contamination A gas distribution ceiling electrode for use as a capacitive source power applicator and gas distribution showerhead in a plasma reactor includes a metal base and a process-compatible protective layer on the interior surface of he electrode having a dopant impurity ... | 05/22/2007 |
