Class 257/E45.003 - Switching materials being oxides or nitrides (EPO)

Subclass of Class 257 - Active solid-state devices (e.g., transistors, solid-state diodes)
Definition: This subclass is indented under subclass E45.002. This subclass
No. of patents: 28
Last issue date: 10/21/2008

Number	Title	Issue Date
7439536	Phase change memory cell with tubular heater and manufacturing method thereof A phase change memory cell includes a phase change region of a phase change material, a heating element of a resistive material, arranged in contact with the phase change region and a memory element formed in said phase change region at a contact area with the heati...	10/21/2008
7400006	Conductive memory device with conductive oxide electrodes A multi-resistive state element that uses barrier electrodes is provided. If certain materials are used as electrodes, the electrodes can be used for multiple purposes. Oxides and nitrides are especially well suited for acting as a barrier layer, and possibly even a...	07/15/2008
7378678	Memory device and method of manufacturing the device by simultaneously conditioning transition metal oxide layers in a plurality of memory cells Disclosed are non-volatile memory devices that incorporate a series of single or double memory cells. The single memory cells are essentially “U” shaped. The double memory cells comprise two essentially “U” shaped memory cells. Each memory cell comprises a m...	05/27/2008
7307270	Memory element and memory device A memory element which stably performs operations such as data recording and which has a stable structure with respect to heat is provided. A memory element 10 includes a memory layer 4 and an ion source layer 3 positioned between the fir...	12/11/2007
7259387	Nonvolatile semiconductor memory device A nonvolatile memory element is formed by layering a lower electrode, a variable resistor and an upper electrode in sequence. The variable resistor is formed in which crystallinity and amorphism are mixed. Thus, the nonvolatile memory element is formed. More prefera...	08/21/2007
7256415	Memory device and method of manufacturing the device by simultaneously conditioning transition metal oxide layers in a plurality of memory cells Disclosed are non-volatile memory devices that incorporate a series of single or double memory cells. The single memory cells are essentially “U” shaped. The double memory cells comprise two essentially “U” shaped memory cells. Each memory cell comprises a m...	08/14/2007
6673691	Method for resistance switch using short electric pulses A method of changing the resistance of a perovskite metal oxide thin film device with a resistance-change-producing pulse includes changing the resistance of the device by varying the duration of a resistance-change-producing pulse....	01/06/2004
6664117	Method for resistance memory metal oxide thin film deposition A method of forming a multi-layered, spin-coated perovskite thin film on a wafer includes preparing a perovskite precursor solution including mixing solid precursor material into acetic acid forming a mixed solution; heating the mixed solution in air for ...	12/16/2003
6649957	Thin film polycrystalline memory structure A polycrystalline memory structure is described for improving reliability and yield of devices employing polycrystalline memory materials comprising a polycrystalline memory layer, which has crystal grain boundaries forming gaps between adjacent crystalli...	11/18/2003
6642092	Thin-film transistors formed on a metal foil substrate A method for is provided forming a thin-film transistor (TFT) on a flexible substrate. The method comprises: supplying a metal foil substrate such as titanium (Ti), Inconel alloy, stainless steel, or Kovar, having a thickness in the range of 10 to 500 mic...	11/04/2003
5481491	Recording medium, recording method, and readout method A recording medium comprises an electroconductive oxide film held between a substrate and an insulating oxide film. A recording method locally applies a voltage onto the medium to form a portion different in electric resistance or oxygen content in the el...	01/02/1996
5422982	Neural networks containing variable resistors as synapses A synthetic neural network having a plurality of neuronal elements arranged in an input layer, an output layer, and a hidden layer between the input layer and the output layer. The network has a first plurality of synaptic weighting elements interconnecti...	06/06/1995
5401981	Threshold switching device This invention relates to a threshold switching device which exhibits negative differential resistance, and which is made by depositing a silicon dioxide film derived from hydrogen silsesquioxane resin between at least two electrodes and then applying a v...	03/28/1995
5348773	Threshold switching device This invention relates to a method of forming a threshold switching device which exhibits negative differential resistance and to the devices formed thereby. The method comprises depositing a silicon dioxide film derived from hydrogen silsesquioxane resin...	09/20/1994
5339211	Variable capacitor An electrical or electronic circuit having at least one variable capacitor device connected in parallel relationship in the circuit by at least a pair of electrodes. The improvement constitutes the capacitor device being in the form of a silicon dioxide f...	08/16/1994
5312684	Threshold switching device This invention relates to a method of forming a threshold switching device which exhibits negative differential resistance and to the devices formed thereby. The method comprises depositing a silicon dioxide film derived from hydrogen silsesquioxane resin...	05/17/1994
5293335	Ceramic thin film memory device A digital memory circuit for electronic applications. The circuit has at least one memory element connected in series with a load resistor. The digital memory circuit also includes a voltage supply and a data output terminal. The memory element in the dig...	03/08/1994
5289402	Recording medium, recording method, and readout method A recording medium comprises an electroconductive oxide film held between a substrate and an insulating oxide film. A recording method locally applies a voltage onto the medium to form a portion different in electric resistance or oxygen content in the el...	02/22/1994
5283545	Variable resistors This invention relates to a voltage pulse controlled variable resistor in which at least 2 leads are placed in direct contact with a material containing silica derived from hydrogen silsesquioxane. The resistor is formed by depositing a silica film derive...	02/01/1994
4931763	Memory switches based on metal oxide thin films MnO2-x thin films (12) exhibit irreversible memory switching (28) with an "OFF/ON" resistance ratio of at least about 103 and the tailorability of "ON" state (20) resistance. Such films are potentially extremely useful as a "connecti...	06/05/1990
4839700	Solid-state non-volatile electronically programmable reversible variable resistance device A solid-state variable resistance device (10) whose resistance can be repeatedly altered by a control signal over a wide range, and which will remain stable after the signal is removed, is formed on an insulated layer (14), supported on a substrate (12) a...	06/13/1989
4472296	Bulk, polycrystalline switching materials for threshold and/or memory switching A new group of bulk polycrystalline materials which are capable of exhibiting, selectively, either memory switching or threshold switching. The body of the material, which can be molded into a suitable ceramic resistor configuration with ohmic electrodes ...	09/18/1984
4163982	Solid state electrical switch employing electrochromic material A solid state electrical switch is described which exhibits high off/on resistance ratios and low insertion loss. An additional advantage is that removal of the switching energy does not alter the status (off or on) of the switch. The active solid state m...	08/07/1979
4118727	MOX multi-layer switching device comprising niobium oxide At least two metal oxide switch devices sandwiched together with each dev consisting of polycrystalline refractory transition metal oxide such as NbO2 formed on a conducting refractory substrate such as single crystal NbO. The polycrystalline ...	10/03/1978
4050082	Glass switching device using an ion impermeable glass active layer A glass electronic switching device having improved long-term reliability comprises a thin layer of an ion impermeable glass disposed between a pair of electrical contacts. Preferably the glass is an insulating glass having a thermal coefficient of expans...	09/20/1977
4045712	Voltage responsive switches and methods of making A method of making a voltage sensitive switch characterized by an irreversible change in resistance from a high resistance state greater than one megohm to a low resistance state less than approximately one hundred ohms is described as comprising heating ...	08/30/1977
3976811	Voltage responsive switches and methods of making A method of making a voltage sensitive switch characterized by an irreversible change in resistance from a high resistance state greater than one megohm to a low resistance state less than approximately one hundred ohms is described as comprising heating ...	08/24/1976
3962715	High-speed, high-current spike suppressor and method for fabricating same There is disclosed a spike suppressor which is capable of switching very high currents at very high speeds. Typically, a current in the order of 80 amperes can be switched in less than 1 nanosecond. The device is also capable of dissipating high power. Ty...	06/08/1976

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Class 257/E45.003 - Switching materials being oxides or nitrides (EPO)