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Method and apparatus for making a drink hop along a bar or counter
A method for generating a drink which appears to hop from a remote spot on the bar or counter and take one or more leaps, before landing in a patron's glass.
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| Number | Title | Issue Date |
| 7443003 | Shape memory alloy information storage device An information storage device includes a substrate and a shape memory alloy film established on the substrate. The shape memory alloy film may receive, supply, and store digital information. One or more thermoelectric modules is/are nanoimprinted between the substra... | 10/28/2008 |
| 7381982 | Method for fabricating chalcogenide-applied memory A chalcogenide memory cell includes a lower electrode, a chalcogenide layer, and an upper electrode. The lower electrode includes a tapered cavity. The chalcogenide layer is formed in the tapered cavity of the lower electrode. One side of the chalcogenide layer is a... | 06/03/2008 |
| 7326950 | Memory device with switching glass layer A memory device, such as a PCRAM, including a chalcogenide glass backbone material with germanium telluride glass and methods of forming such a memory device. ... | 02/05/2008 |
| 6677629 | Electric or electronic component and application as non volatile memory and device with surface acoustic waves The invention concerns a component of composite structure (10) consisting of a layer of ferroelectric material (11) and at least a thin film of semiconductor material or of a thin metal or supraconducting film (12) in close contact with the layer of ferro... | 01/13/2004 |
| 6614178 | Solid-state excimer devices and processes for producing same Useful, new electronic devices are disclosed which utilize the huge polarization and electric double layer generated by excimer formation reaction in solid thin host films doped with excimer forming atoms (rare-gases and halogens: hereinafter, the parent ... | 09/02/2003 |
| 6590750 | Limiting magnetoresistive electrical interaction to a preferred portion of a magnetic region in magnetic devices Magnetoresistive devices are disclosed which include a changeable magnetic region within which at least two magnetic states can be imposed. Upon magnetoresistive electrical interaction with the device, the relative orientation of the magnetic states of th... | 07/08/2003 |
| 6572974 | Modification of infrared reflectivity using silicon dioxide thin films derived from silsesquioxane resins Changes in the infrared reflection spectrum of a thin film of silica-like resinous material sandwiched between metal electrodes can be induced by applying an electric potential to a top electrode which is semitransparent. Characteristic infrared absorptio... | 06/03/2003 |
| 6570224 | Quantum-size electronic devices and operating conditions thereof Quantum-size electronic devices comprise electrodes and at least one cluster seperated from the said electrodes by a tunnel-transparent gap. The characteristic dimensions for elements of quantum-size devices are determined by the formula in the range 1×4... | 05/27/2003 |
| 6563555 | Methods of manufacturing a two-terminal nonlinear device An MIM nonlinear device having a large nonlinearity coefficient that represents the sharpness of the voltage-current characteristic, a liquid crystal display panel with high image-quality that uses this device, and a manufacturing method of said MIM nonli... | 05/13/2003 |
| 6563185 | High speed electron tunneling device and applications A detector for detecting electromagnetic radiation incident thereon over a desired range of frequencies exhibits a given responsivity and includes an output and first and second non-insulating layers, which layers are spaced apart such that a given voltag... | 05/13/2003 |
| 6525532 | Magnetic device A magnetic sensor is constructed to be capable of detecting the change of tunnel current due to co-tunneling effect at a high S/N ratio by using a tunneling magneto-resistive element having a first magnetic layer of a soft magnetic material formed on a fl... | 02/25/2003 |
| 6504197 | Magnetic memory element and magnetic memory using the same A magnetic memory element has a first ferromagnetic layer, a second ferromagnetic layer, and a non-magnetic layer disposed between these ferromagnetic layers. The non-magnetic layer has an electrical characteristic that is changeable depending on an exter... | 01/07/2003 |
| 6452764 | Limiting magnetoresistive electrical interaction to a preferred portion of a magnetic region in magnetic devices Magnetoresistive devices are disclosed which include a changeable magnetic region within which at least two magnetic states can be imposed. Upon magnetoresistive electrical interaction with the device, the relative orientation of the magnetic states of th... | 09/17/2002 |
| 6417060 | Method for making a diode device A method for manufacturing a pair of electrodes comprises fabricating a first electrode with a substantially flat surface and placing a sacrificial layer over a surface of the first electrode, wherein the sacrificial layer comprises a first material. A se... | 07/09/2002 |
| 6388268 | Semiconducting YBCO device and superconducting YBCO device locally converted by AFM tip and manufacturing methods therefor A semiconducting yttrium-barium-copper-oxygen(YBCO) device which locally converts a semiconducting YBCO film to a nonconducting YBCO film by a conductive atomic force microscope (AFM), a superconducting YBCO device which locally converts a superconducting... | 05/14/2002 |
| 6384880 | Two-terminal type non-linear element, manufacturing method thereof and liquid crystal display panel The present invention provides a MIM type non-linear element in which the capacitance is sufficiently small and in which little changes over time are exhibited in the current-voltage characteristics, a liquid crystal display panel with high image quality ... | 05/07/2002 |
| 6368705 | Metal-insulator-metal diodes and methods of manufacture A metal insulator diode device and method of manufacture are described. The device includes a conductive layer and a metal-insulator layer comprising particles of a refractory metal having an intrinsic oxide coating that are suspended in a dielectric bind... | 04/09/2002 |
| 6365948 | Magnetic tunneling junction device A magnetic tunneling effect device capable of displaying a so-called magnetic tunneling effect in stability, more specifically, a magnetic tunneling junction device in which a first magnetic metal layer and a second magnetic metal layer are connected toge... | 04/02/2002 |
| 6350557 | Thin-film two-terminal elements, method of production thereof, liquid crystal display A thin-film two-terminal element including first metal film functioning as a wiring layer and a first electrode, a first insulating film formed on the first electrode of the first metal film and having a non-linear resistance property, a second metal film... | 02/26/2002 |
| 6339330 | Magnetic head A magnetic sensor is constructed to be capable of detecting the change of tunnel current due to co-tunneling effect at a high S/N ratio by using a tunneling magneto-resistive element having a first magnetic layer of a soft magnetic material formed on a fl... | 01/15/2002 |
| 6331454 | Atomic-level electronic network and method of fabrication An insulated lattice is prepared with a plurality of lattice oriented atoms to create a substantially planar surface having a lattice arrangement. Any unsatisfied chemical bonds are terminated along the substantially planar surface by placing atoms at the... | 12/18/2001 |
| 6295225 | Magnetic tunnel junction device having an intermediate layer A magnetic tunnel junction device has a multi-layer structure including a pair of electrode layers of a ferromagnetic material and a tunnel barrier layer of an insulating material between the electrode layers. In order to realize a low resistance, the mul... | 09/25/2001 |
| 6285419 | Two-terminal metal/insulating material/metal (MIM) device, method for manufacturing the same and liquid crystal display panel An MIM nonlinear device having a large nonlinearity coefficient that represents the sharpness of the voltage-current characteristic, a liquid crystal display panel with high image-quality that uses this device, and a manufacturing method of said MIM nonli... | 09/04/2001 |
| 6232777 | Tunneling magnetoresistive element and magnetic sensor using the same A magnetic sensor is constructed to be capable of detecting the change of tunnel current due to co-tunneling effect at a high S/N ratio by using a tunneling magnetoresistive element having a first magnetic layer of a soft magnetic material formed on a fla... | 05/15/2001 |
| 6198113 | Electrostatically operated tunneling transistor A transistor operated by changing the electrostatic potential of an island disposed between two tunnel junctions. The transistor has an island of material which has a band gap (e.g. semiconductor material). Source and drain contacts are provided. The tran... | 03/06/2001 |
| 6194737 | Phase-locked circuit device using a single-electron tunneling junction element and method of fabricating the same This invention is characterized in that a load resistor is constituted of a tunneling junction element(12), and a single-electron tunneling junction element(10) and the tunneling junction element(12) for load resistor are laminated to design a phase-locke... | 02/27/2001 |
| 6165287 | Ferromagnetic tunnel-junction magnetic sensor A ferromagnetic tunnel-junction magnetic sensor includes a first ferromagnetic layer, an insulation barrier layer formed on the first ferromagnetic layer and including therein a tunnel oxide film, and a second ferromagnetic layer formed on the insulation ... | 12/26/2000 |
| 6157422 | Two-terminal nonlinear element having insulating films of different thickness formed on the flat top surface of a lower electrode The two-terminal nonlinear element of this invention includes: a lower electrode having a flat top surface and tapered side walls; a thinner insulating film formed on a portion of the flat top surface of the lower electrode adjacent to the boundary with t... | 12/05/2000 |
| 6124711 | Magnetic sensor using tunnel resistance to detect an external magnetic field A magnetic sensor including a first magnetic layer having an axis of easy magnetization in a first direction; a second magnetic layer having an axis of easy magnetization in a second direction different from the first direction; a third magnetic layer pos... | 09/26/2000 |
| 6110751 | Tunnel junction structure and its manufacture and magnetic sensor A tunnel junction structure is provided. A first magnetic layer is formed on a support substrate. A tunnel insulating layer is disposed on the first magnetic layer, the tunnel insulating layer containing a metal element as a constituent. A second magnetic... | 08/29/2000 |
| 6111784 | Magnetic thin film memory element utilizing GMR effect, and recording/reproduction method using such memory element It provides a magnetic thin film memory element utilizing the GMR effect. The memory element comprising a first magnetic layer with a closed magnetic circuit structure, a second magnetic layer with a closed magnetic circuit structure having a coercive for... | 08/29/2000 |
| 6100951 | Thin-film switching elements for electronic devices and a method of manufacturing the same Thin-film switching elements (20,21) of a display device or the like include a first electrode (22,23) on a substrate (11) and a layer of switching material (24,25) on the first electrode. These switching elements may be semiconductor PIN or Schottky diod... | 08/08/2000 |
| 6083764 | Method of fabricating an MTJ with low areal resistance A method of fabricating a magnetoresistive tunnel junction including forming a thin, continuous layer of aluminum alloy on the surface of a first magnetic layer, the continuous layer of aluminum alloy including greater than 90% aluminum and traces of mate... | 07/04/2000 |
| 6052263 | Low moment/high coercivity pinned layer for magnetic tunnel junction sensors A magnetic tunnel junction (MTJ) device is usable as a magnetic field sensor in magnetic disk drives or as a memory cell in a magnetic random access (MRAM) array. The MTJ device has a ferromagnetic antiparallel (AP)-pinned layer comprising a first ferroma... | 04/18/2000 |
| 5997958 | Method of depositing nanometer scale particles Nanometre scale particles (3) e.g. of Au are deposited on a Si substrate (2) with a SiO2 surface layer (1) provided with receptor sites (4) of a first electrical polarity by treatment with APTMS solution. The Au particles (3) have a surface cha... | 12/07/1999 |
| 5994748 | Two-terminal nonlinear device, method for manufacturing the same, and liquid-crystal display panel A MIM nonlinear device is provided having a large nonlinearity coefficient that represents the sharpness of the voltage-current characteristic. A liquid-crystal display panel may be manufactured using the device to exhibit high image-quality. A method for... | 11/30/1999 |
| 5986858 | Ferromagnetic tunnel-junction magnetic sensor utilizing a barrier layer having a metal layer carrying an oxide film A ferromagnetic tunnel-junction magnetic sensor includes a first ferromagnetic layer, an insulation barrier layer formed on the first ferromagnetic layer and including therein a tunnel oxide film, and a second ferromagnetic layer formed on the insulation ... | 11/16/1999 |
| 5981316 | Method of fabrication of atomic chain circuit network An insulated lattice is prepared with a plurality of lattice oriented atoms to create a substantially planar surface having a lattice arrangement. Any unsatisfied chemical bonds are terminated along the substantially planar surface by placing atoms at the... | 11/09/1999 |
| 5966012 | Magnetic tunnel junction device with improved fixed and free ferromagnetic layers An improved magnetic tunnel junction (MTJ) device for use in a magnetic recording read head or in a magnetic memory storage cell is comprised of two ferromagnetic layers, a "hard" or "fixed" ferromagnetic layer and a sensing or "free" ferromagnetic layer,... | 10/12/1999 |
| 5942790 | Charge effect transistor and a method for manufacturing the same A new conceptional transistor and a method for manufacturing, which increases the integration of semiconductor devices using conventional MOS devices are provided. The present invention provides a transistor in which a structure of metal-insulator film-me... | 08/24/1999 |
