Bizarre Patents
Pneumatic Shoe Lacing Apparatus
This invention provides a pneumatic shoe lacing apparatus for the pneumatic lacing of shoe.
PatentStorm News
Make the Most of Our Site
See this month's Top Inventors and Most Cited Patents.
Stay on top of the latest innovations by subscribing to an RSS feed.
Registered users: Manage your profile.
| Number | Title | Issue Date |
| 7427514 | Passivated magneto-resistive bit structure and passivation method therefor A passivated magneto-resistive bit structure is disclosed in which surfaces subjects to oxidation or corrosion are protected. In one embodiment, a bit structure is encapsulated by means of an etch stop barrier material. In another embodiment an etch stop barrier mat... | 09/23/2008 |
| 7381573 | Self-aligned, low-resistance, efficient memory array The present invention seeks to reduce the amount of current required for a write operation by using a process for forming the read conductor within a recessed write conductor, the write conductor itself formed within a trench of an insulating layer. The present inve... | 06/03/2008 |
| 7352021 | Magnetic random access memory devices having titanium-rich lower electrodes with oxide layer and oriented tunneling barrier Magnetic Random Access Memory (MRAM) devices include a lower electrode and a magnetic tunnel junction on the lower electrode. The magnetic tunnel junction includes a seed layer and a tunneling barrier that is oriented in a same direction as the most closely packed p... | 04/01/2008 |
| 7267999 | MRAM layer having domain wall traps A common pinned layer is shared by multiple memory cells in an MRAM device. The common pinned layer includes a plurality of domain wall traps that prevent the formation of domain walls within a region of the common pinned layer corresponding to a given memory cell. ... | 09/11/2007 |
| 7239489 | Tunneling magnetoresistive (TMR) sensor having a magnesium oxide barrier layer formed by a multi-layer process A tunneling magnetoresistive (TMR) sensor includes a first ferromagnetic (FM) layer (e.g. a sense or reference layer), a barrier layer formed over the first FM layer, and a second FM layer (e.g. a sense or reference layer) formed over the barrier layer. The barrier ... | 07/03/2007 |
| 6680831 | Magnetoresistive element, method for manufacturing the same, and method for forming a compound magnetic thin film The invention provides a magnetoresistive element in which the pinned magnetic layer includes at least one non-magnetic film and magnetic films sandwiching that non-magnetic film, and the magnetic films are coupled with one another by magnetostatic coupli... | 01/20/2004 |
| 6677165 | Magnetoresistive random access memory (MRAM) cell patterning A process that advantageously forms MRAM cells without the application of ion beam milling processes. Unlike conventional processes that rely on ion beam milling processes to remove materials from a magnetoresistive sandwich from areas other than areas th... | 01/13/2004 |
| 6669787 | Method of manufacturing a spin valve structure The invention relates to a method of manufacturing a spin valve structure (1) of the GMR-type. Such a structure includes a stack of a magnetic layer (11a 11b), a nonmagnetic layer (15) and a sense layer (17) of a ferromagnetic material. In order to obtain... | 12/30/2003 |
| 6663920 | Ion implantation method for fabricating magnetoresistive (MR) sensor element A method for forming a magnetoresistive (MR) layer first employs a substrate over which is formed a magnetoresistive (MR) layer formed of a magnetoresistive (MR) material. There is then ion implanted selectively, while employing an ion implant method, the... | 12/16/2003 |
| 6656604 | Magnetoresistive thin-film magnetic element and method for making the same A magnetoresistive thin-film magnetic element including a composite comprising an antiferromagnetic layer, a pinned magnetic layer, a nonmagnetic conductive layer, a free magnetic layer; hard bias layers for orienting the magnetic vectors of the free magn... | 12/02/2003 |
| 6656372 | Methods of making magnetoresistive memory devices The invention includes methods of forming magnetoresistive devices. In one method, a construction is formed which includes a first magnetic layer, a non-magnetic layer over the first magnetic layer, and a second magnetic layer over the non-magnetic layer.... | 12/02/2003 |
| 6638691 | Method for fabricating plate type magnetic resistance sensor chip element Disclosed is a method for fabricating a plate-type magnetic resistance sensor chip simply and easily. First, a characteristic membrane composed of NiCo and NiFe is deposited over a surface of a glass wafer, exposed to light, and etched in a predetermined ... | 10/28/2003 |
| 6635496 | Plate-through hard mask for MRAM devices A method of fabricating an MRAM device includes patterning a magnetic stack material layer (142) using a herd mask (146) formed by a "plate-through" technique. A resist (144) is deposited over magnetic stack material (142), and the resist (144) is pattern... | 10/21/2003 |
| 6635499 | MRAM sense layer isolation A process for forming an MRAM element. The process comprises patterning a globally deposited sense layer and then forming a spacer about the patterned sense layer so as to cover the lateral edges of the patterned sense layer. Subsequently, a globally depo... | 10/21/2003 |
| 6633464 | Synthetic antiferromagnetic pinned layer with Fe/FeSi/Fe system A magnetoresistive (MR) device includes a synthetic antiferromagnetic (AFM) layer having an Fe/FeSi/Fe construction. A first Fe layer of the synthetic AFM layer has a magnetization substantially in a first direction, while a second Fe layer of the synthet... | 10/14/2003 |
| 6633497 | Resistive cross point array of short-tolerant memory cells A data storage device includes a resistive cross point array of memory cells. Each memory cell includes a memory element and electrically conductive hard mask material on the memory element. The data storage device may be a Magnetic Random Access Memory (... | 10/14/2003 |
| 6617173 | Integration of ferromagnetic films with ultrathin insulating film using atomic layer deposition A technique to form an ultrathin dielectric layer over a ferromagnetic layer by atomic layer deposition.... | 09/09/2003 |
| 6610583 | Method for manufacturing semiconductor thin film, and magnetoelectric conversion element provided with semiconductor thin film thereby manufactured A method for manufacturing a semiconductor thin film having high carrier mobility, and a magnetoelectric conversion element provided with the semiconductor thin film manufactured by the aforementioned method are provided. The temperature of the Si single ... | 08/26/2003 |
| 6496338 | Spin-valve magnetoresistive sensor including a first antiferromagnetic layer for increasing a coercive force and a second antiferromagnetic layer for imposing a longitudinal bias The present invention provides a spin-valve magnetoresistive sensor comprising at least two ferromagnetic layers including a first and a second ferromagnetic layers. A first antiferromagnetic layer is layered adjacent to the first ferromagnetic layer for ... | 12/17/2002 |
| 6482329 | Method for manufacturing magnetoresistance element A method of manufacturing a magnetoresistance element which can reproduce magnetic signals with higher sensitivity. The manufacturing method includes the steps of providing a vacuum below 10-9 Torr in a film forming chamber for forming a nonmag... | 11/19/2002 |
| 6339329 | Method for manufacturing a giant resistive ratio (GMR) bridge detector and a magnetoresistive bridge detector A method for manufacturing a GMR bridge detector as well as the bridge detector itself in which magnetoresistive resistors are interconnected in the form of a bridge to detect a magnetic field. The resistors consist of a material that exhibits the giant m... | 01/15/2002 |
| 6335675 | Semiconductor magnetoresistance device, making method and magnetic sensor A semiconductor magnetoresistance device having plural pairs of opposed short-circuiting electrodes (13) on the opposed surfaces of a semiconductor magneto-sensitive layer (12) shows a great resistance change relative to a magnetic flux density.... | 01/01/2002 |
| 6295186 | Spin-valve magnetoresistive Sensor including a first antiferromagnetic layer for increasing a coercive force and a second antiferromagnetic layer for imposing a longitudinal bias The present invention provides a spin-valve magnetoresistive sensor comprising at least two ferromagnetic layers including a first and a second ferromagnetic layers. A first antiferromagnetic layer is layered adjacent to the first ferromagnetic layer for ... | 09/25/2001 |
| 6270633 | Artificial latticed multi-layer film deposition apparatus The present invention relates to an artificial latticed multi-layer film deposition apparatus for depositing on a substrate a gigantic magneto-resistive effect film (GMR film) having an artificial lattice structure formed of magnetic metal films and non-m... | 08/07/2001 |
| 6165607 | Sputtering target and antiferromagnetic film and magneto-resistance effect element formed by using the same A sputtering target consisting essentially of Mn and at least one kind of R element selected from a group of Ni, Pd, Pt, Co, Rh, Ir, V, Nb, Ta, Cu, Ag, Au, Ru, Os, Cr, Mo, W, and Re. The sputtering target, at least as a part of target texture, comprises o... | 12/26/2000 |
| 6139908 | Magnetoresistance device and production method thereof A magnetoresistance device comprising at least two ferromagnetic layers separated by a non-magnetic layer, the coercive force of one of the ferromagnetic layers being enhanced by a coercive force enhancement layer of an antiferromagnetic material disposed... | 10/31/2000 |
| 6083764 | Method of fabricating an MTJ with low areal resistance A method of fabricating a magnetoresistive tunnel junction including forming a thin, continuous layer of aluminum alloy on the surface of a first magnetic layer, the continuous layer of aluminum alloy including greater than 90% aluminum and traces of mate... | 07/04/2000 |
| 6074707 | Method of producing magnetoresistive element The present invention provides a method of producing a magnetoresistive element in which a laminate including a free ferromagnetic layer in which at least magnetization is freely rotated according to an external magnetic field, a non-magnetic layer, and a... | 06/13/2000 |
| 5985162 | Method for forming soft adjacent layer (SAL) magnetoresistive (MR) sensor element with electrically insulated soft adjacent layer (SAL) A soft adjacent layer (SAL) magnetoresistive (MR) sensor element and a method for fabricating the soft adjacent layer (SAL) magnetoresistive (MR) sensor element. To practice the method, there is first provided a substrate. There is formed over the substra... | 11/16/1999 |
| 5961848 | Process for producing magnetoresistive transducers A process for producing magnetoresistive transducers, using microlithographic techniques, where the transducers have magnetic metallic multilayers deposited by sputtering or by molecular beam epitaxy, and forming columns whose side walls will be covered w... | 10/05/1999 |
| 5910344 | Method of manufacturing a magnetoresistive sensor The present invention provides a magnetoresistive sensor having at least two ferromagnetic layers provided with a non-magnetic layer therebetween; a coercive force increasing layer consisting of an antiferromagnetic material and provided adjacent to one o... | 06/08/1999 |
| 5871622 | Method for making a spin valve magnetoresistive sensor A process for making a spin valve magnetoresistive (SVMR) sensor includes forming a nickel-oxide (NiO) layer as the antiferromagnetic layer for pinning the magnetization of the pinned ferromagnetic layer in the SVMR sensor. The process includes forming th... | 02/16/1999 |
| 5804250 | Method for fabricating stable magnetoresistive sensors A method of fabricating a stable, self-biased paired MR (magnetoresistive) sensor comprising the steps of depositing a first MR film with a diffusion barrier layer on either side on a substrate; depositing an oxide passivation/spacer layer on top of the f... | 09/08/1998 |
| 5792510 | Method for making a chemically-ordered magnetic metal alloy film A method for forming a chemically-ordered ferromagnetic or antiferromagnetic metal alloy film allows the temperature and/or time required for annealing to be reduced. The ferromagnetic or antiferromagnetic metal alloy film is dosed with hydrogen either du... | 08/11/1998 |
| 5756366 | Magnetic hardening of bit edges of magnetoresistive RAM Magnetoresistive random access memory bit edges are magnetically hardened to prevent bit edge reversal.... | 05/26/1998 |
| 5747198 | Resist pattern of T-shaped cross section A resist pattern formed on a substrate has a T-shaped cross section including a stem portion extending from the substrate surface and a cap portion connected to the stem portion and spaced from the substrate surface. Provided that is a minimum of ... | 05/05/1998 |
| 5725997 | Method for preparing a resist pattern of t-shaped cross section A resist pattern formed on a substrate has a T-shaped cross section including a stem portion extending from the substrate surface and a cap portion connected to the stem portion and spaced from the substrate surface. Provided that is a minimum of ... | 03/10/1998 |
| 5721078 | Magnetoresistance thin film element formed through use of a resist pattern of T-shaped cross section A resist pattern formed on a substrate has a T-shaped cross section including a stem portion extending from the substrate surface and a cap portion connected to the stem portion and spaced from the substrate surface. Provided that is a minimum of ... | 02/24/1998 |
| 5634260 | Method of making a magnetoresistive device having improved Barkhausen noise suppression An improved magnetoresistive device and method for fabricating the same which results in improved Barkhausen noise suppression. A generally coplanar device is described having an MR structure conductive region longitudinally biased by opposing permanent m... | 06/03/1997 |
| 5618738 | Manufacturing method for magnetoresistance elements A method of manufacturing a magnetoresistance element that can accurately sort out truely defective products from apparently defective products due to the manufacturing processes. Manufacturing processes for MR elements includes a MR element formation pro... | 04/08/1997 |
