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Class 257/E43.005 - Selection of materials (EPO)


Subclass of Class 257 - Active solid-state devices (e.g., transistors, solid-state diodes)
Definition: This subclass is indented under subclass E43.001. This subclass
No. of patents: 148
Last issue date: 06/12/2007


1        
NumberTitleIssue Date
7230265Spin-polarization devices using rare earth-transition metal alloys
A tunnel barrier in proximity with a layer of a rare earth element-transition metal (RE—TM) alloy forms a device that passes negatively spin-polarized current. The rare earth element includes at least one element selected from the group consisting of Gd, Tb, Dy, H...
06/12/2007
6686205Screening combinatorial arrays of inorganic materials with spectroscopy or microscopy
Methods and apparatus for the preparation and use of a substrate having an array of diverse materials in predefined regions thereon. A substrate having an array of diverse materials thereon is generally prepared by delivering components of materials to pr...
02/03/2004
6680831Magnetoresistive element, method for manufacturing the same, and method for forming a compound magnetic thin film
The invention provides a magnetoresistive element in which the pinned magnetic layer includes at least one non-magnetic film and magnetic films sandwiching that non-magnetic film, and the magnetic films are coupled with one another by magnetostatic coupli...
01/20/2004
6649413Synthesis and screening combinatorial arrays of zeolites
Methods and apparatus for the preparation and use of a substrate having an array of diverse materials in predefined regions thereon. A substrate having an array of diverse materials thereon is generally prepared by delivering components of materials to pr...
11/18/2003
6597547Magnetoresistive device with an ଱-Fe2O3 antiferromagnetic film and indirect exchange coupling film layers of differing thickness
A magnetoresistance effect device of the present invention includes a multilayer film. The multilayer film includes an antiferromagnetic film, a first ferromagnetic film, a non-magnetic film and a second ferromagnetic film, which are provided in this orde...
07/22/2003
6590389Magnetic sensor, magnetic sensor apparatus, semiconductor magnetic resistance apparatus, and production method thereof
An Inx Ga1-x Asy Sb1-y (0
07/08/2003
6562486Exchange coupling film, magnetoresistance effect device, magnetoresistance effective head and method for producing exchange coupling film
An exchange coupling film of the present invention includes a ferromagnetic layer and a pinning layer which is provided in contact with the ferromagnetic layer for pinning a magnetization direction of the ferromagnetic layer, the pinning layer including a...
05/13/2003
6496338Spin-valve magnetoresistive sensor including a first antiferromagnetic layer for increasing a coercive force and a second antiferromagnetic layer for imposing a longitudinal bias
The present invention provides a spin-valve magnetoresistive sensor comprising at least two ferromagnetic layers including a first and a second ferromagnetic layers. A first antiferromagnetic layer is layered adjacent to the first ferromagnetic layer for ...
12/17/2002
6455178Exchange coupling film and magnetoresistive element
An exchange coupling film comprises a ferromagnetic film and an antiferromagnetic film laminated on the ferromagnetic film, wherein at least a portion of the antiferromagnetic film has a face-centered cubic crystal structure and the antiferromagnetic film...
09/24/2002
6420179Combinatorial sythesis of organometallic materials
Methods and apparatus for the preparation and use of a substrate having an array of diverse materials in predefined regions thereon. A substrate having an array of diverse materials thereon is generally prepared by delivering components of materials to pr...
07/16/2002
6410331Combinatorial screening of inorganic and organometallic materials
Methods and apparatus for the preparation and use of a substrate having an array of diverse materials in predefined regions thereon. A substrate having an array of diverse materials thereon is generally prepared by delivering components of materials to pr...
06/25/2002
6395388Magnetoresistance effect element
The present invention provides an exchange coupling film having a stacked-film-structure consisting of a ferromagnetic film made of at least one material of Fe, Co and Ni, and an antiferromagnetic film, wherein the exchange coupling film made of a ferroma...
05/28/2002
6387548Exchange coupling film and magnetoresistance effect type element using this exchange coupling film, and thin film magnetic head using the magnetoresistance effect type element
The antiferromagnetic layer 4 is formed of the X--Mn alloy (X is an platinum group element) and the interface structure of with the pinned magnetic layer 3 is made to be non-coherent by properly adjusting the composition ratio of X. Consequently, the crys...
05/14/2002
6387550Giant magnetoresistive material film, method of producing the same and magnetic head using the same
A giant magnetoresistive material film includes at least two ferromagnetic layers of a NiFe alloy or NiFeCo alloy, which are formed on a substrate through a nonmagnetic layer of Au, Ag, Cu or Cr, wherein magnetization of at lest one of the ferromagnetic l...
05/14/2002
6346290Combinatorial synthesis of novel materials
Methods and apparatus for the preparation and use of a substrate having an array of diverse materials in predefined regions thereon. A substrate having an array of diverse materials thereon is generally prepared by delivering components of materials to pr...
02/12/2002
6340520Giant magnetoresistive material film, method of producing the same magnetic head using the same
A giant magnetoresistive material film includes at least two ferromagnetic layers of a NiFe alloy or NiFeCo alloy, which are formed on a substrate through a nonmagnetic layer of Au, Ag, Cu or Cr, wherein magnetization of at lest one of the ferromagnetic l...
01/22/2002
6326090Combinatorial synthesis of novel materials
Methods and apparatus for the preparation and use of a substrate having an array of diverse materials in predefined regions thereon. A substrate having an array of diverse materials thereon is generally prepared by delivering components of materials to pr...
12/04/2001
6301089Spin-valve type magnetoresistive thin film element comprising free magnetic layer having nife alloy layer
A spin-valve type magnetoresistive thin film element includes at least one antiferromagnetic layer, a pinned magnetic layer in contact with the antiferromagnetic layer, a nonmagnetic electrically conductive layer formed on the pinned magnetic layer, with ...
10/09/2001
6295186Spin-valve magnetoresistive Sensor including a first antiferromagnetic layer for increasing a coercive force and a second antiferromagnetic layer for imposing a longitudinal bias
The present invention provides a spin-valve magnetoresistive sensor comprising at least two ferromagnetic layers including a first and a second ferromagnetic layers. A first antiferromagnetic layer is layered adjacent to the first ferromagnetic layer for ...
09/25/2001
6258470Exchange coupling film, magnetoresistance effect device, magnetoresistance effective head and method for producing exchange coupling film
An exchange coupling film of the present invention includes a ferromagnetic layer and a pinning layer which is provided in contact with the ferromagnetic layer for pinning a magnetization direction of the ferromagnetic layer, the pinning layer including a...
07/10/2001
6256222Magnetoresistance effect device, and magnetoresistaance effect type head, memory device, and amplifying device using the same
A magnetoresistance effect device of the invention includes: a substrate; and a multilayer structure formed on the substrate. The multilayer structure includes a hard magnetic film, a soft magnetic film, and a non-magnetic metal film for separating the ha...
07/03/2001
6245450Exchange coupling film magnetoresistance effect device magnetoresistance effective head and method for producing magnetoresistance effect device
An exchange coupling film of the present invention includes a substrate and a multilayer film. The multilayer film includes: a ferromagnetic layer and a magnetization rotation suppressing layer provided adjacent to the ferromagnetic layer for suppressing ...
06/12/2001
6210818Magnetoresistive element
A spin-valve thin film element comprises a pinned magnetic layer formed of a CoFe alloy or a CoFeNi alloy having adjusted composition ratios. Thus the pinned magnetic layer can have a positive magnetostriction and its magnetization can be induced in the h...
04/03/2001
6183889Magneto-impedance element, and magnetic head, thin film magnetic head, azimuth sensor and autocanceler using the same
A magneto-impedance element, showing a change in impedance in response to an external magnetic field when an alternating current is applied, is composed of a glassy alloy. The glassy alloy is composed of at least one base metal selected from the group con...
02/06/2001
6183859Low resistance MTJ
A low resistance magnetic tunnel junction with low resistance barrier layer and method of fabrication is disclosed. A first magnetic layer of material with a surface is provided and a continuous layer of material, e.g. aluminum, is formed on the surface o...
02/06/2001
6166539Magnetoresistance sensor having minimal hysteresis problems
The present invention provides a method and apparatus for utilizing magnetoresistance devices for the measurement of weak magnetic fields. An oscillating excitation magnetic field is applied to a magnetoresistive (MR) sensing element such that the MR elem...
12/26/2000
6146775Magnetoresistive film
A magnetoresistive film is disclosed which has a layered structure comprising a first ferromagnetic layer, a second ferromagnetic layer, a nonmagnetic conductive layer interposed between the first and second ferromagnetic layers, and an antiferromagnetic ...
11/14/2000
6137395Magnetoresistor with ordered double perovskite structure and method for the production thereof
A magnetoresistor with an ordered double perovskite structure is an oxide crystal which has an ordered double perovskite crystal structure represented by the general formula of A2 BB'O6, wherein A stands for Sr atoms, B for Fe atoms ...
10/24/2000
6057049Exchange coupling film and magnetoresistive element
An exchange coupling film comprises a ferromagnetic film and an antiferromagnetic film laminated on the ferromagnetic film, wherein at least a portion of the antiferromagnetic film has a face-centered cubic crystal structure and the antiferromagnetic film...
05/02/2000
6054226Magnetoresistive element and magnetic detector and use thereof
A magnetoresistive element comprising a combination of an electroconductive, crystalline magnetostrictive material or an amorphous magnetostrictive material with an electrically insulating layer and an oxide magnetoresistive material, or a combination of ...
04/25/2000
6013365Multi-layer structure and sensor and manufacturing process
This invention relates to a multilayered magnetic structure comprising an alternate stack of: layers (6, 16) of a first type based on magnetic materials, layers (12) of a second type, made of Ag or an Ag rich alloy, a thin interface layer (8, 14) of Co or a Co rich...
01/11/2000
6006582Hydrogen sensor utilizing rare earth metal thin film detection element
A hydrogen sensor for the detection of hydrogen, e.g., in an environment susceptible to the incursion or generation of hydrogen. The sensor includes a rare earth metal thin film arranged for exposure to the environment and exhibiting a detectable change o...
12/28/1999
5998040Multilayer which shows magnetoresistive effect and magnetoresistive element using the same
A magnetoresistive element uses a multilayer film where ferromagnetic layers and nonferromagnetic layers are layered on each other, wherein a permanent magnet layer is formed on the aforementioned multilayer film through one of the nonferromagnetic layers...
12/07/1999
5985356Combinatorial synthesis of novel materials
Methods and apparatus for the preparation and use of a substrate having an array of diverse materials in predefined regions thereon. A substrate having an array of diverse materials thereon is generally prepared by delivering components of materials to pr...
11/16/1999
5968676Magnetoresistance effect film and magnetoresistance effect type head
A spin valve type magnetoresistance effect film comprises a magnetic multilayered film including a non-magnetic metal layer, a ferromagnetic layer formed on one surface of the non-magnetic metal layer, a soft magnetic layer formed on the other surface of ...
10/19/1999
5962905Magnetoresistive element
A magnetoresistive element comprises an n-type emitter layer, a p-type base layer, and an n-type collector layer, the three layers being so arranged as to form a pn-junction with each other, an emitter ferromagnetic layer formed in contact with the n-type...
10/05/1999
5958576Magnetoresistance effect device and magnetic head
A magnetoresistance effect device and a magnetic head according to the present invention exhibit preferable magnetic characteristics and an excellent corrosion resistance. The magnetoresistance effect device includes an antiferromagnetic body formed in a ...
09/28/1999
5958611Magnetic multilayered film, magnetoresistance effect element and magnetoresistance device
According to the present invention, a magnetic multilayered film includes an oxide antiferromagnetic layer, a pinned ferromagnetic layer which is pinned by the oxide antiferromagnetic layer, a non-magnetic metal layer and a free ferromagnetic layer which ...
09/28/1999
5948550Magnetoresistive film
A magnetoresistive film having a spin valve multi-layer structure has low electrical resistance and high sensitivity. In the magnetoresistive film, an under-layer, a first ferromagnetic layer, a non-magnetic layer, a second ferromagnetic layer, and an ant...
09/07/1999
5945904Giant magnetoresistors with high sensitivity and reduced hysteresis and thin layers
A giant magnetoresistive assembly includes a first film fabricated of a ferromagnetic material having a first predetermined thickness, a second film fabricated of a non-ferromagnetic material formed to said first film having a second predetermined thickne...
08/31/1999
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