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| Number | Title | Issue Date |
| 7422912 | Magnetic memory device and methods for making same In one embodiment, a memory device includes a plurality of magnetic data cells and a magnetic reference cell extending uninterrupted along more than one of the plurality of data cells. ... | 09/09/2008 |
| 7388268 | Compound semiconductor multilayer structure, hall device, and hall device manufacturing method Hall device is provided by enabling stable provision of a quantum well compound semiconductor stacked structure. It has first and second compound semiconductor layers composed of Sb and at least two of five elements of Al, Ga, In, As and P, and an active layer compo... | 06/17/2008 |
| 7381573 | Self-aligned, low-resistance, efficient memory array The present invention seeks to reduce the amount of current required for a write operation by using a process for forming the read conductor within a recessed write conductor, the write conductor itself formed within a trench of an insulating layer. The present inve... | 06/03/2008 |
| 7378698 | Magnetic tunnel junction and memory device including the same A magnetic tunnel junction device includes a magnetically programmable free magnetic layer. The free magnetic layer includes a lamination of at least two ferromagnetic layers and at least one intermediate layer interposed between the at least two ferromagnetic layer... | 05/27/2008 |
| 7372118 | Magnetic random access memory and method of manufacturing the same A magnetic random access memory includes, a lower electrode, a magnetoresistive element which is arranged above the lower electrode and has side surfaces, and a protective film which covers the side surfaces of the magnetoresistive element, has a same planar shape a... | 05/13/2008 |
| 7352021 | Magnetic random access memory devices having titanium-rich lower electrodes with oxide layer and oriented tunneling barrier Magnetic Random Access Memory (MRAM) devices include a lower electrode and a magnetic tunnel junction on the lower electrode. The magnetic tunnel junction includes a seed layer and a tunneling barrier that is oriented in a same direction as the most closely packed p... | 04/01/2008 |
| 7315041 | Switching devices based on half-metals One embodiment of the present invention provides a switching device that can vary a spin-polarized current based on an input signal. The switching device comprises a first conducting region, a second conducting region, and a half-metal region interposed between the ... | 01/01/2008 |
| 7312506 | Memory cell structure A memory cell structure. A first conductive line is cladded by at least two first ferromagnetic layers respectively having a first easy axis and a second easy axis, a nano oxide layer located between the first ferromagnetic layers, and a first pinned ferromagnetic l... | 12/25/2007 |
| 7247505 | Magnetic memory device having magnetic shield layer, and manufacturing method thereof A magnetic memory device includes a first wiring layer which runs in the first direction, a memory element which is arranged above the first wiring layer, second wiring layers which are arranged on the memory element and run in a second direction different from the ... | 07/24/2007 |
| 7164180 | Magnetoresistive random-access memory device Disclosed is a new type of magnetoresistive random-access memory (MRAM) device using a magnetic semiconductor, which is capable of achieving high-integration and energy saving in a simplified structure without any MOS transistor, based on a rectification effect deri... | 01/16/2007 |
| 7095071 | Magnetic random access memory According to an aspect of the present invention, there is disclosed a magnetic resistive element comprising a first magnetic layer whose magnetized state changes in accordance with data, a nonmagnetic layer disposed on the first magnetic layer, and a second magnetic... | 08/22/2006 |
| 7081659 | Semiconductor apparatus having a built-in electric coil and a method of making the semiconductor apparatus A semiconductor apparatus includes lower conductive film strips, an inter-layer insulating layer, implanted conductive members, and upper conductive film strips. The lower conductive film strips are formed in a pattern closely adjacent in a line width orientation, e... | 07/25/2006 |
| 7053430 | Antiferromagnetic stabilized storage layers in GMRAM storage devices A giant magnetoresistive memory device includes a magnetic sense layer, a magnetic storage layer, a non-magnetic spacer layer between the magnetic sense layer and the magnetic storage layer, and an antiferromagnetic layer formed in proximity to the magnetic storage ... | 05/30/2006 |
| 6687099 | Magnetic head with conductors formed on endlayers of a multilayer film having magnetic layer coercive force difference The magnetoresistance effect element is of a multilayered structure having at least magnetic layers and an intermediate layer of an insulating material, a semiconductor or an antiferromagnetic material against the magnetic layers, and the magnetoresistanc... | 02/03/2004 |
| 6680831 | Magnetoresistive element, method for manufacturing the same, and method for forming a compound magnetic thin film The invention provides a magnetoresistive element in which the pinned magnetic layer includes at least one non-magnetic film and magnetic films sandwiching that non-magnetic film, and the magnetic films are coupled with one another by magnetostatic coupli... | 01/20/2004 |
| 6667526 | Tunneling magnetoresistive storage unit A tunneling magnetoresistive storage unit (TMR unit) includes a hollow cylinder-shaped free-spin element having one open end, a columnlike fixed-spin element formed inside the cylinder-shaped free-spin element, and a thin insulator layer located between t... | 12/23/2003 |
| 6656604 | Magnetoresistive thin-film magnetic element and method for making the same A magnetoresistive thin-film magnetic element including a composite comprising an antiferromagnetic layer, a pinned magnetic layer, a nonmagnetic conductive layer, a free magnetic layer; hard bias layers for orienting the magnetic vectors of the free magn... | 12/02/2003 |
| 6657829 | Tunneling magnetoresistive device A tunneling magnetoresistive device comprises an insulating barrier layer, and at least two ferromagnetic layers provided on the same plane of the layer. The insulating barrier layer can be initially formed, so that when a metal layer is oxidized to form ... | 12/02/2003 |
| 6639291 | Spin dependent tunneling barriers doped with magnetic particles A tunneling barrier for a spin dependent tunneling (SDT) device is disclosed that includes a plurality of ferromagnetic particles. The presence of such particles in the tunneling barrier has been found to increase a magnetoresistance or ƊR/R response, im... | 10/28/2003 |
| 6635947 | Monolithically integrable inductor A monolithically integrable inductor containing a layer sequence of conductive layers and insulating layers that are stacked mutually alternately above one another is described. The conductive layers are configured in such a way that they form a coil-type... | 10/21/2003 |
| 6633464 | Synthetic antiferromagnetic pinned layer with Fe/FeSi/Fe system A magnetoresistive (MR) device includes a synthetic antiferromagnetic (AFM) layer having an Fe/FeSi/Fe construction. A first Fe layer of the synthetic AFM layer has a magnetization substantially in a first direction, while a second Fe layer of the synthet... | 10/14/2003 |
| 6611034 | Magnetic device and solid-state magnetic memory A magnetic device which has a layer having pores on a substrate and is to be used by applying electric current in the direction of depth of the pores includes a laminated structure in which a first ferromagnetic layer, a second ferromagnetic layer having ... | 08/26/2003 |
| 6605837 | Memory cell configuration and production method A memory cell configuration includes a magnetoresistive element with an annular cross-section in a layer plane, a first line and a second line. The first and second lines crossing each other. The magnetoresistive element is disposed in the crossing region... | 08/12/2003 |
| 6577526 | Magnetoresistive element and the use thereof as storage element in a storage cell array The magnetoresistive element has a first ferromagnetic element, a nonmagnetic layer element, and a second ferromagnetic layer element arranged in such a way that the nonmagnetic layer element is disposed between the first ferromagnetic layer element and t... | 06/10/2003 |
| 6567246 | Magnetoresistance effect element and method for producing the same, and magnetoresistance effect type head, magnetic recording apparatus, and magnetoresistance effect memory element A magnetoresistance effect element includes a free layer, in which a magnetization direction thereof is easily rotated in response to an external magnetic field, a first non-magnetic layer, and a first pinned layer provided on a side opposite to the free ... | 05/20/2003 |
| 6535362 | Magnetoresistive device having a highly smooth metal reflective layer The magnetoresistive device of the present invention includes: at least two magnetic layers stacked via a non-magnetic layer therebetween; and a metal reflective layer of conduction electrons formed so as to be in contact with at least one of outermost tw... | 03/18/2003 |
| 6519123 | Method to manufacture magnetic tunneling elements using inductively coupled plasma A magnetic tunneling element in which the tunnel current flows reliably to exhibit a stable magnetic tunneling effect. The magnetic tunneling element includes a first magnetic layer, a tunnel barrier layer formed on the first magnetic layer, and a second ... | 02/11/2003 |
| 6511855 | Method of forming ferromagnetic tunnel junctions with enhanced magneto-resistance A tunnel junction having a topography and/or interface layers that enhance its magneto-resistance. The topography of the tunnel junction maximizes spin tunneling from areas of ferromagnetic crystalline grains having high polarization and minimizes the eff... | 01/28/2003 |
| 6504469 | Magnetoresistive element and method of producing a crystal structure A magnetoresistive element, comprising a crystal structure with a grain boundary formed at a misorientation angle, and a method of producing a crystal structure having colossal magnetoresistance, wherein a grain boundary is formed at a misorientation angl... | 01/07/2003 |
| 6483677 | Magnetic disk apparatus including magnetic head having multilayered reproducing element using tunneling effect The magnetoresistance effect element is of a multilayered structure having at least magnetic layers and an intermediate layer of an insulating material, a semiconductor or an antiferromagnetic material against the magnetic layers, and the magnetoresistanc... | 11/19/2002 |
| 6416636 | Method for manufacturing a magnetoresistive element with conductive films and magnetic domain films overlapping a central active area The present invention is directed to an MR element and a thin film magnetic head that do not cause an increase in the electrical resistance value due to the presence of dead zones. When forming passive areas that include magnetic domain control films and ... | 07/09/2002 |
| 6352621 | Method of manufacturing film laminate having exchange anisotropic magnetic field PtMn films are used as antiferromagnetic layers of a dual spin-valve type magnetoresistive sensor. An exchange anisotropic magnetic field is achieved regardless of whether the PtMn film is formed over or under the pinned magnetic layer. Also, an effective... | 03/05/2002 |
| 6349053 | Spin dependent tunneling memory A digital data memory having a bit structure in a memory cell based on a dielectric intermediate separating material with two major surfaces having thereon an anisotropic ferromagnetic thin-film of differing thicknesses. These bit structures are fabricate... | 02/19/2002 |
| 6335675 | Semiconductor magnetoresistance device, making method and magnetic sensor A semiconductor magnetoresistance device having plural pairs of opposed short-circuiting electrodes (13) on the opposed surfaces of a semiconductor magneto-sensitive layer (12) shows a great resistance change relative to a magnetic flux density.... | 01/01/2002 |
| 6312840 | Magnetic tunneling element and manufacturing method therefor A magnetic tunnelling element in which the tunnel current flows reliably in an insulating layer to exhibit a stable magnetic tunnelling effect. To this end, the magnetic tunnelling element at least includes a first magnetic layer, a tunnel barrier layer f... | 11/06/2001 |
| 6301089 | Spin-valve type magnetoresistive thin film element comprising free magnetic layer having nife alloy layer A spin-valve type magnetoresistive thin film element includes at least one antiferromagnetic layer, a pinned magnetic layer in contact with the antiferromagnetic layer, a nonmagnetic electrically conductive layer formed on the pinned magnetic layer, with ... | 10/09/2001 |
| 6278593 | Magnetoresistance effect elements and magnetic heads using the tunneling magnetoresistive effect The magnetoresistance effect element is of a multilayered structure having at least magnetic layers and an intermediate layer of an insulating material, a semicondutor or an antiferromagnetic material against the magnetic layers, and the magneto-resistanc... | 08/21/2001 |
| 6275411 | Spin dependent tunneling memory A digital data memory having a bit structure in a memory cell based on a dielectric intermediate separating material with two major surfaces having thereon an anisotropic ferromagnetic thin-film of differing thicknesses. These bit structures are fabricate... | 08/14/2001 |
| 6183890 | Magneto-resistance effect device and method of manufacturing the same In a magneto-resistance effect device including a plurality of magnetic dots each of which is formed by magnetic material on a substrate and appears a magneto-resistance effect by applying an external magnetic field, the magnetic dots are arranged on the ... | 02/06/2001 |
| 6169303 | Ferromagnetic tunnel junctions with enhanced magneto-resistance A tunnel junction having a topography and/or interface layers that enhance its magneto-resistance. The topography of the tunnel junction maximizes spin tunneling from areas of ferromagnetic crystalline grains having high polarization and minimizes the eff... | 01/02/2001 |
