Bizarre Patents
Mouthguard made at least partially from an edible candy
A mouthguard includes a U-shaped upper bite plate which removably fits over upper teeth of a person, with the entire upper bite plate being made from a soft, deformable and edible gummi candy.
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| Number | Title | Issue Date |
| 7439550 | Semiconductor light emitting device A semiconductor light emitting device can be configured to prevent diffusion migration of components constituting a linear electrode. The semiconductor light emitting device can include a substrate, at least one semiconductor layer formed on the substrate and having... | 10/21/2008 |
| 7435999 | Semiconductor chip for optoelectronics and method for the production thereof A semiconductor chip for optoelectronics having a thin-film layer, in which a zone that emits electromagnetic radiation is formed and which has an emission side, a rear side and side faces that connect the rear side to the emission side. A carrier for the thin-film ... | 10/14/2008 |
| 7432117 | Light-emitting diode and manufacturing method thereof A light-emitting diode and the manufacturing method thereof are provided, wherein the light-emitting diode comprises an epitaxial structure, a bonding layer and a composite substrate. The bonding layer located over one side of the epitaxial structure is used for adh... | 10/07/2008 |
| 7420216 | Reflection type light-emitting diode device A reflection type light-emitting diode device of a kind capable of emitting rays of light to the outside after having been reflected by a reflecting surface includes a recessed casing (22) having a cavity defining the reflecting surface (15) and also h... | 09/02/2008 |
| 7368803 | System and method for protecting microelectromechanical systems array using back-plate with non-flat portion Disclosed is an electronic device utilizing interferometric modulation and a package of the device. The packaged device includes a substrate, an interferometric modulation display array formed on the substrate, and a back-plate. The back-plate is placed over the dis... | 05/06/2008 |
| 7342251 | Method of manufacturing an electro-optical device An object of the invention is to reduce the manufacturing cost of EL display devices and electronic devices incorporating the EL display devices. An EL material is formed by printing in an active matrix EL display device. Relief printing or screen printing may be us... | 03/11/2008 |
| 7338824 | Method for manufacturing FFS mode LCD In the present invention, a method for manufacturing a liquid crystal display is provided. The method includes steps of providing a substrate, forming a first metal layer on the substrate, etching the first metal layer to form a plurality of gate lines on the substr... | 03/04/2008 |
| 7339198 | Light-emitting diode chip package body and packaging method thereof AN LED chip package body provides an LED chip with a pad-installed surface, a plurality of pads disposed on the pad-installed surface and a rear surface formed opposite the pad-installed surface. The LED chip package body further has a light-reflecting coating dispo... | 03/04/2008 |
| 7319248 | High brightness light emitting diode The present invention discloses a high brightness light emitting diode. The light emitting diode primarily includes a permanent substrate, a reflective mirror formed on said permanent substrate, an n-type cladding layer formed on said reflective mirror, and defining... | 01/15/2008 |
| 7319240 | Array substrate with reduced pixel defect, method of manufacturing the same and liquid crystal display panel having the same An array substrate includes a transparent substrate, a switching element, an insulating layer and a pixel electrode. The switching element includes a gate electrode formed on the transparent substrate and connected to a gate line, a channel layer formed on the gate ... | 01/15/2008 |
| 7306960 | High radiance LED chip and a method for producing same The invention concerns a light-emitting diode chip comprising a radiation-emitting active region and a window layer. To increase the luminous efficiency, the cross-sectional area of the radiation-emitting active region is smaller than the cross-sectional area of the... | 12/11/2007 |
| 7294864 | Flip chip type nitride semiconductor light-emitting diode A flip chip type nitride semiconductor light-emitting diode includes a light-transmissive substrate for growing nitride single crystals; an n-type nitride semiconductor layer formed on the light-transmissive substrate; an active layer formed on the n-type nitride se... | 11/13/2007 |
| 7282736 | Light emitting structure including an exposed electrode overlapping a wiring or conductive layer (Object) In a light-emitting device, it is preferable that a surface of a film below a light-emitting element has flatness. Therefore, treatment such as planarization of a surface of a film is performed after forming the film. The present invention proposes a struct... | 10/16/2007 |
| 7274040 | Contact and omnidirectional reflective mirror for flip chipped light emitting devices A light emitting device includes a substrate, a doped substrate layer, a layer of first conductivity type overlying the doped substrate layer, a light emitting layer overlying the layer of first conductivity type, and a layer of second conductivity type overlying th... | 09/25/2007 |
| 7253865 | Non rectangular display device A display device has an array 40 of pixels and row and column driver circuitry comprising row driver circuit portions R and column driver circuit portions C, each pixel being addressed by a row driver circuit portion R and a column driver circuit portion C wh... | 08/07/2007 |
| 7138662 | Light-emitting device A light-emitting device including: a semiconductor light-emitting element using a substrate surface as a light-extracting surface; and a mount frame on which the semiconductor light-emitting element is mounted and which has a reflecting portion for reflecting light ... | 11/21/2006 |
| 7126159 | Plural leds mounted within a central cutout of a surrounding circular reflective electrode A light emitting device includes a first patterned electrode 12 and a second patterned electrode 13 both of which are formed on a wiring board 11, an LED chip 19 mounted on the second patterned electrode 13, a metal wire 20 ... | 10/24/2006 |
| 7105858 | Electronic assembly/system with reduced cost, mass, and volume and increased efficiency and power density An LED display assembly, comprising a grid of electrical conductors; light emitting diodes in association with the grid and in electrical communication with the conductors that provide power for LED operation, the grid operable to receive heat from the diodes during... | 09/12/2006 |
| 6696704 | Composite light-emitting device, semiconductor light-emitting unit and method for fabricating the unit A composite light-emitting device according to the present invention includes a light-emitting element including a transparent substrate and a multilayer structure formed on the substrate. The multilayer structure includes first and second semiconductor l... | 02/24/2004 |
| 6693306 | Structure of a light emitting diode and method of making the same A structure of a light emitting diode (LED) and a method of making the same are disclosed. The present invention is suitable for the light emitting diode having the area that is larger than 100 mil2 and having the insulating substrate, and is f... | 02/17/2004 |
| 6677615 | Semiconductor light-emitting device, electrode for the device, method for fabricating the electrode, LED lamp using the device, and light source using the LED lamp A semiconductor light-emitting device includes a semiconductor substrate that has a rear surface formed with a first electrode, a semiconductor layer that includes a light-emitting portion and is formed on the semiconductor substrate, a plurality of dispe... | 01/13/2004 |
| 6667529 | Semiconductor device A semiconductor device has a first semiconductor layer, a second semiconductor layer, and an active layer sandwiched between the first and the second semiconductor layer and emits light from the active layer when a voltage is applied across the first and ... | 12/23/2003 |
| 6661033 | LED with a coupling-out structure On an upper side there is a structured output coupling layer with flanks which are aligned at an angle between 60° and 88° with respect to a layer plane and which form boundaries for output coupling areas provided for the emergence of radiation and offs... | 12/09/2003 |
| 6660550 | Surface emission type semiconductor light-emitting device and method of manufacturing the same A method of manufacturing a semiconductor light-emitting device includes: a step of forming a stacked semiconductor layer having a plurality of columnar portions over a semiconductor substrate, a step of forming an embedding insulation layer of a resin ma... | 12/09/2003 |
| 6657237 | GaN based group III-V nitride semiconductor light-emitting diode and method for fabricating the same A GaN based III-V nitride semiconductor light-emitting device and a method for fabricating the same are provided. In the GaN based III-V nitride semiconductor light-emitting device including first and second electrodes arranged facing opposite directions ... | 12/02/2003 |
| 6657377 | Cylindrical electrical component having two electrodes on bottom face In a polarized electrical component, a first electrode is provided at an inner-side bottom face of the component, and a second electrode is provided at an outer-side bottom face of the component. One of the first and second electrodes serves as an anode e... | 12/02/2003 |
| 6657238 | Light emitting diode and illuminator using the same An illuminator includes a first terminal, a second terminal, and a light emitting diode mounted on the first terminal and electrically connected to the second terminal. The light emitting diode includes a chip body, a lower electrode formed on a lower sur... | 12/02/2003 |
| 6653215 | Contact to n-GaN with Au termination A contact for n-type III-V semiconductor such as GaN and related nitride-based semiconductors is formed by depositing Al,Ti,Pt and Au in that order on the n-type semiconductor and annealing the resulting stack, desirably at about 400-600° C. for about 1-... | 11/25/2003 |
| 6650018 | High power, high luminous flux light emitting diode and method of making same A high power, high luminous flux light emitting diode (LED) comprises a substrate, a light-emitting structure, a first electrode and a second electrode. The LED has a top surface layout design in which the first electrode has a number of legs extending in... | 11/18/2003 |
| 6649437 | Method of manufacturing high-power light emitting diodes The present invention is related to a method of manufacturing high efficiency LEDs. The LEDs uses a metal reflection layer to solve the problem of light absorption by the substrate, and improves the illumination. It also forms a vertical structure where t... | 11/18/2003 |
| 6649942 | Nitride-based semiconductor light-emitting device A nitride-based semiconductor light-emitting device capable of attaining homogeneous emission with a low driving voltage is obtained. This nitride-based semiconductor light-emitting device comprises a first conductivity type first nitride-based semiconduc... | 11/18/2003 |
| 6646292 | Semiconductor light emitting device and method A light-emitting device includes: a semiconductor structure formed on one side of a substrate, the semiconductor structure having a plurality of semiconductor layers and an active region within the layers; and first and second conductive electrodes contac... | 11/11/2003 |
| 6642072 | Light-emitting element, semiconductor light-emitting device, and manufacturing methods therefor A GaN-based LED element 1 having a double heterostructure, which includes a GaN layer and the like and is formed on a sapphire substrate, is mounted face-down on a Si diode element 2 formed in a silicon substrate. Electrical connections are provided via A... | 11/04/2003 |
| 6642548 | Light-emitting diodes with loop and strip electrodes and with wide medial sections Light emitting diodes such as those formed from gallium nitride based semiconductors are provided with electrode and pad structures which facilitate current spreading. The LED may be formed as a die with a lower contact surface and a mesa projecting upwar... | 11/04/2003 |
| 6633120 | LED lamps A high power LED lamp has a GaN chip placed over an AlGaInP chip. A reflector is placed between the two chips. Each of the chips has trenches diverting light for output. The chip pair can be arranged to produce white light having a spectral distribution i... | 10/14/2003 |
| 6630366 | Manufacturing method for light emitting device In semiconductor light emitting sections capable of effectively improving electric cross-talk and effectively avoiding short-circuit between each of light emitting devices, in which a plurality of semiconductor light emitting sections are formed to a semi... | 10/07/2003 |
| 6621106 | Light emitting diode A light emitting diode (LED) of a double hetero-junction type has a light-emitting layer of a GaAlInP material, a p-type cladding layer and an n-type cladding layer sandwiching the light-emitting layer therebetween, a p-side electrode formed on the p-type... | 09/16/2003 |
| 6614056 | Scalable led with improved current spreading structures An LED with improved current spreading structures that provide enhanced current injection into the LED's active layer, improving its power and luminous flux. The current spreading structures can be used in LEDs larger than conventional LEDs while maintain... | 09/02/2003 |
| 6614055 | Surface light-emitting element and self-scanning type light-emitting device A surface light-emitting element having improved external light emission efficiency and a self-scanning light-emitting device using this surface light-emitting element are provided. To improve external light-emission efficiency, the light-emitting center ... | 09/02/2003 |
| 6610589 | Semiconductor light emitting device and method of manufacturing the same A semiconductor lamination including an n-type layer and a p-type layer composed of a gallium nitride based compound semiconductor and forming a light emitting region is formed on the surface of a substrate. A p-side electrode is formed through a diffusio... | 08/26/2003 |
