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| Number | Title | Issue Date |
| 7442953 | Wavelength selective photonics device A device comprising a number of different wavelength-selective active-layers arranged in a vertical stack, having band-alignment and work-function engineered lateral contacts to said active-layers, consisting of a contact-insulator and a conductor-insulator. Photons... | 10/28/2008 |
| 7436066 | Semiconductor element It is an object of the present invention to provide a highly reliable and high-quality semiconductor element by effectively preventing the migration of silver to a nitride semiconductor when an electrode main entirely or mostly of silver having high reflection effic... | 10/14/2008 |
| 7411223 | Compound electrodes for electronic devices A compound electrode comprises a first layer that comprises at least one halide compound of at least one metal selected from the group consisting of alkali metals and alkaline-earth metals; and a second layer comprising an electrically conducting material. The secon... | 08/12/2008 |
| 7402841 | Gallium nitride-based compound semiconductor light-emitting device and electrode for the same An object of the present invention is to provide a light-permeable electrode for use in a gallium nitride-based compound semiconductor light-emitting device, the electrode having improved light permeability and contact resistance. The inventive electrode comp... | 07/22/2008 |
| 7335924 | High-brightness light emitting diode having reflective layer An LED structure is disclosed herein, which comprises, sequentially arranged in the following order, a light generating structure, a non-alloy ohmic contact layer, a metallic layer, and a substrate. As a reflecting mirror, the metallic layer is made of a pure metal ... | 02/26/2008 |
| 7329906 | Semiconductor device and method for forming the same A low temperature process for fabricating a high-performance and reliable semiconductor device in high yield, comprising forming a silicon oxide film as a gate insulator by chemical vapor deposition using TEOS as a starting material under an oxygen, ozone, or a nitr... | 02/12/2008 |
| 7306960 | High radiance LED chip and a method for producing same The invention concerns a light-emitting diode chip comprising a radiation-emitting active region and a window layer. To increase the luminous efficiency, the cross-sectional area of the radiation-emitting active region is smaller than the cross-sectional area of the... | 12/11/2007 |
| 7291891 | In-solid nuclear spin quantum calculation device A voltage is applied across gate electrodes (103A) and (103B) in a two-dimensional electronic system (101) placed under a magnetic field, and the polarity of an electric current passed between ohmic electrodes (102D) and (102S) is ... | 11/06/2007 |
| 7285857 | GaN-based III—V group compound semiconductor device and p-type electrode for the same Provided are a p-type electrode and a III-V group GaN-based compound semiconductor device using the same. The electrode includes a first layer disposed on a III-V group nitride compound semiconductor layer and formed of a Zn-based material containing a solute; and a... | 10/23/2007 |
| 7244997 | Magneto-luminescent transducer An electronic system includes a three terminal device having a light emitting portion and a magnetically sensitive portion. The magnetically sensitive portion is for modulating light emission from the light emitting portion. The device is a spin valve transistor hav... | 07/17/2007 |
| 7211832 | Light emitting apparatus A light emitting apparatus has: a support; a wiring layer that is formed on the support; and an LED element that is flip-chip mounted on the wiring layer formed on the support. The wiring layer has: a conductive layer that is formed on the support and is electricall... | 05/01/2007 |
| 7193247 | Gallium nitride compound semiconductor device A GaN compound semiconductor device can be capable of free process design and can have optimum device characteristics. The device can include a group III nitride compound semiconductor laminate structure including an n-type GaN compound semiconductor layer and a p-t... | 03/20/2007 |
| 7135709 | Surface structured light-emitting diode with improved current coupling Structured-surface light-emitting diode having a light generating layer and a relatively thick, transparent current-spreading layer, vertical structuring of the top surface of the current-spreading layer serves to improve the decoupling of light, while at the same t... | 11/14/2006 |
| 7119375 | Light emitting diode and method for manufacturing the same A light emitting diode (LED) includes a substrate, a first conductive clad layer formed on the substrate, an active layer formed on the first conductive clad layer, a second conductive clad layer formed on the active layer, an alumina (Al2O3) l... | 10/10/2006 |
| 7102172 | LED luminaire A modular light emitting diode (LED) mounting configuration is provided including a light source module having a plurality of pre-packaged LEDs arranged in a serial array. The module is connected to a heat dissipating plate configured to mount to an electrical junct... | 09/05/2006 |
| 6693352 | Contact structure for group III-V semiconductor devices and method of producing the same A contact structure for group III-V and group II-VI compound semiconductor devices, generally used as a light emitting diode (LED), a laser diode (LD), or a photodiode (PD), comprising p-type and/or n-type conduction is disclosed. The contact structure co... | 02/17/2004 |
| 6673641 | Contact structure for an electric II/VI semiconductor component and a method for the production of the same A process for the production of contacts for electrically operated II/VI semiconductor structures (for example laser diodes). The contact materials palladium and gold hitherto used in relation to electrically operated II/VI semiconductor lasers are distin... | 01/06/2004 |
| 6664570 | P-type contact electrode device and light-emitting device A p-type contact electrode device in a ZnSe-based II-VI compound semiconductor, which electrode device uses, as a contact layer, a BeTe layer having a high p-type doping and a low lattice mismatching with a GaAs substrate to prevent oxidation in air. The ... | 12/16/2003 |
| 6657300 | Formation of ohmic contacts in III-nitride light emitting devices P-type layers of a GaN based light-emitting device are optimized for formation of Ohmic contact with metal. In a first embodiment, a p-type GaN transition layer with a resistivity greater than or equal to about 7 Ωcm is formed between a p-type conductivi... | 12/02/2003 |
| 6646292 | Semiconductor light emitting device and method A light-emitting device includes: a semiconductor structure formed on one side of a substrate, the semiconductor structure having a plurality of semiconductor layers and an active region within the layers; and first and second conductive electrodes contac... | 11/11/2003 |
| 6642072 | Light-emitting element, semiconductor light-emitting device, and manufacturing methods therefor A GaN-based LED element 1 having a double heterostructure, which includes a GaN layer and the like and is formed on a sapphire substrate, is mounted face-down on a Si diode element 2 formed in a silicon substrate. Electrical connections are provided via A... | 11/04/2003 |
| 6642549 | Method of forming a window for a gallium nitride light emitting diode A window structure for a gallium nitride (GaN)-based light emitting diode (LED) includes a Mg+ doped p window layer of a GaN compound; a thin, semi-transparent metal contact layer; and an amorphous current spreading layer formed on the contact layer. The ... | 11/04/2003 |
| 6597019 | Semiconductor light-emitting device comprising an electrostatic protection element A GaN-based LED element 1 having a double heterostructure, which includes a GaN layer and the like and is formed on a sapphire substrate, is mounted face-down on a Si diode element 2 formed in a silicon substrate. Electrical connections are provided via A... | 07/22/2003 |
| 6573537 | Highly reflective ohmic contacts to III-nitride flip-chip LEDs An inverted III-nitride light-emitting device (LED) with highly reflective ohmic contacts includes n- and p-electrode metallizations that are opaque, highly reflective, and provide excellent current spreading. The n- and p-electrodes each absorb less than... | 06/03/2003 |
| 6541796 | Opto-electronic device with self-aligned ohmic contact layer An opto-electronic device has a diffusion area of one conductive type formed in a semiconductor substrate of another conductive type, an ohmic contact layer making contact with the diffusion area, and an electrode making contact with the ohmic contact lay... | 04/01/2003 |
| 6531715 | Multilayer contact electrode for compound semiconductors and production method thereof A multilayer contact electrode for connecting a bonding wire to a p-type surface of a III/V-compound semiconductor is formed by a first metallizing step followed by a tempering step. Then, a second metallized layer of the same metal as the first metal lay... | 03/11/2003 |
| 6531383 | Method for manufacturing a compound semiconductor device The invention provides a method for manufacturing a gallium nitride-based III-V group compound semiconductor device, which comprises the following steps: forming a semiconductor stacked structure over a substrate, wherein the semiconductor stacked structu... | 03/11/2003 |
| 6521914 | III-Nitride Light-emitting device with increased light generating capability The present invention is an inverted III-nitride light-emitting device (LED) with enhanced total light generating capability. A large area device has an n-electrode that interposes the p-electrode metallization to provide low series resistance. The p-elec... | 02/18/2003 |
| 6514782 | Method of making a III-nitride light-emitting device with increased light generating capability The present invention is an inverted III-nitride light-emitting device (LED) with enhanced total light generating capability. A large area device has an n-electrode that interposes the p-electrode metallization to provide low series resistance. The p-elec... | 02/04/2003 |
| 6495859 | Opto-electronic component made from II-VI semiconductor material A component has an active layer, barrier layers and, if appropriate, a buffer layer and at least one of these layers contains a beryllium-containing chalcogenide. The active layer is a multiple layer, for example a superlattice made of BeTe/ZnSe or of BeT... | 12/17/2002 |
| 6486499 | III-nitride light-emitting device with increased light generating capability The present invention is an inverted III-nitride light-emitting device (LED) with enhanced total light generating capability. A large area device has an n-electrode that interposes the p-electrode metallization to provide low series resistance. The p-elec... | 11/26/2002 |
| 6486500 | Led structure having a schottky contact and manufacturing method A structure and manufacturing method of LED is disclosed. The manufacturing method of the structure of LED comprises: providing a substrate; on the substrate, forming in sequence a buffer layer, a first confining layer, an active layer, a second confining... | 11/26/2002 |
| 6474531 | Semiconductor light-emitting device and method of manufacturing the same and mounting plate To offer a semiconductor light-emitting device capable of preventing a short circuit failure caused by adhesion of the solder, change of a beam shape, and decrease of a beam output. A semiconductor laser device 1 is manufactured by overlaying a laser tip ... | 11/05/2002 |
| 6469319 | Ohmic contact to a II-VI compound semiconductor device and a method of manufacturing the same An ohmic contact to II-VI compound semiconductor device for lowering the contact resistance and increasing the efficiency and reliability of a photoelectric device. The method of manufacturing the ohmic contact to a II-VI compound semiconductor device com... | 10/22/2002 |
| 6465273 | Method of making ZnSe based light emitting device with in layer using vibration and pressure A light emitting device includes an LED chip fixed to an electrode body via a conductive layer of In or an In alloy. The conductive layer is in ohmic-contact with an n-type ZnSe crystal substrate of the LED chip. To make the device, In or an In alloy is m... | 10/15/2002 |
| 6455879 | Low resistance contact semiconductor diode A semiconductor device wherein the layer of highly doped p-type material typically found in devices of the prior art is replaced with a layer of doped n-type material, having a doping concentration of between 1×1018 cm-3 and less th... | 09/24/2002 |
| 6456639 | Semiconductor light emitting device with II-VI group semiconductor contact layer containing alkali metal impurity, method of producing the same, and optical device including same The invention provides a semiconductor light emitting device whose operating voltage can be easily reduced, a method of producing the same, and an optical device. An n-type clad layer, a first guide layer, an active layer, a second guide layer, a p-type c... | 09/24/2002 |
| 6433365 | Epitaxial wafer and light emitting diode An epitaxial wafer comprises epitaxial layers 3-6 formed on a main surface of a compound semiconductor single crystal substrate 2, wherein the epitaxial layer 3a on the main surface is exposed in a back surface of the compound semiconductor single crystal... | 08/13/2002 |
| 6429111 | Methods for fabricating an electrode structure The electrode structure of the invention includes a p-type Alx Gay In1-x-y N (0ࣘxࣘ1, 0ࣘyࣘ1, x+yࣘ1) semiconductor layer and an electrode layer formed on the semiconductor layer. In the electrode structure, the ele... | 08/06/2002 |
| 6420736 | Window for gallium nitride light emitting diode A window structure for a gallium nitride (GaN)-based light emitting diode (LED) includes a Mg+ doped p window layer of a GaN compound; a thin, semi-transparent metal contact layer; and an amorphous current spreading layer formed on the contact layer. The ... | 07/16/2002 |
