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| Number | Title | Issue Date |
| 7422970 | Method for modifying circuit within substrate A method is provided for modifying a circuit containing a plurality of electrodes, within a substrate, comprising the steps of: (a) selecting at least two electrodes for making a connection; (b) removing materials covering the electrodes with a focused ion beam (FIB... | 09/09/2008 |
| 7420276 | Post passivation structure for semiconductor chip or wafer The present invention adds one or more thick layers of polymer dielectric and one or more layers of thick, wide metal lines on top of a finished semiconductor wafer, post-passivation. The thick, wide metal lines may be used for long signal paths and can also be used... | 09/02/2008 |
| 7390692 | Semiconductor device and method for manufacturing the same A semiconductor device (1) of the present invention includes a semiconductor element (103) including electrode parts (104), and a wiring substrate (108) including an insulation layer (101), electrode-part-connection electrodes (... | 06/24/2008 |
| 7382055 | Integrated thin-film resistor with direct contact A BEOL thin-film resistor adapted for flexible integration rests on a first layer of ILD. The thickness of the first layer of ILD and the resistor thickness combine to match the nominal design thickness of vias in the layer of concern. A second layer of ILD matches ... | 06/03/2008 |
| 7372082 | Submount substrate for mounting light emitting device and method of fabricating the same A submount substrate for mounting a light emitting device and a method of fabricating the same, wherein since a submount substrate for mouthing a light emitting device in which a Zener diode device is integrated can be fabricated by means of a silicon bulk micromach... | 05/13/2008 |
| 7368316 | Surface-emission semiconductor laser device A method for fabricating a surface-emission semiconductor laser on a p-type substrate includes the step of interposing an Au film between an AuGeNi film or AuGe film of an n-side electrode and a compound semiconductor layer of an n-type DBR, followed by annealing to... | 05/06/2008 |
| 7354846 | Submount substrate for mounting light emitting device and method of fabricating the same A submount substrate for mounting a light emitting device and a method of fabricating the same, wherein since a submount substrate for mouthing a light emitting device in which a Zener diode device is integrated can be fabricated by means of a silicon bulk micromach... | 04/08/2008 |
| 7348605 | Organic electroluminescent display device An organic electroluminescent display device comprises a substrate including a display region, and a pad region in a periphery of the display region, the display region including a pixel region; a gate pad, a data pad and a power pad in the pad region, the gate pad,... | 03/25/2008 |
| 7348673 | Semiconductor device A minute wiring structure portion including first wiring layers and first insulating layers, in which each of first wiring layers and each of first insulating layers are alternately laminated, is formed on a semiconductor substrate. A first huge wiring structure por... | 03/25/2008 |
| 7335916 | Electrode structure, and semiconductor light-emitting device having the same A semiconductor light emitting device comprising: a transparent substrate; an electron injection layer of N-type GaN-based semiconductor; an active layer on the electron injection layer; a hole injection layer of P-type GaN-based semiconductor on the active layer; a... | 02/26/2008 |
| 7319243 | Flat panel display device and method of manufacturing the same A flat panel display includes a pixel electrode having an opening portion formed on an insulating substrate, a semiconductor layer formed over a surface of the insulating substrate, spaced apart from the pixel electrode, having source and drain regions formed to bot... | 01/15/2008 |
| 7319240 | Array substrate with reduced pixel defect, method of manufacturing the same and liquid crystal display panel having the same An array substrate includes a transparent substrate, a switching element, an insulating layer and a pixel electrode. The switching element includes a gate electrode formed on the transparent substrate and connected to a gate line, a channel layer formed on the gate ... | 01/15/2008 |
| 7309879 | Semiconductor laser, manufacturing the same and semiconductor laser device A semiconductor laser element capable of reducing the contact resistance and the thermal resistance and realizing a high reliability is provided. The semiconductor laser element includes: a semiconductor substrate, an active layer formed on the semiconductor substra... | 12/18/2007 |
| 7297988 | Flip chip type nitride semiconductor light emitting device The present invention relates to a flip chip type nitride semiconductor light emitting device having p-type and n-type nitride semiconductor layers, and an active layer in between. The invention also has an ohmic contact layer formed on the p-type nitride semiconduc... | 11/20/2007 |
| 7297985 | Display device and display unit using the same A display device is formed by burying at least part of a light emitting device in an insulating material, wherein a drive electrode for the light emitting device is formed so as to be extracted on a surface of the insulating material. A display unit is produced by t... | 11/20/2007 |
| 7291865 | Light-emitting semiconductor device A flip-chip type of Group III nitride based compound semiconductor light-emitting device comprises a transparent conductive film 10 made of ITO on a p-type contact layer. On the transparent conductive film, an insulation protection film 20, a reflectio... | 11/06/2007 |
| 7264981 | Flat panel display device and method of manufacturing the same A flat panel display includes a pixel electrode having an opening portion formed on an insulating substrate, a semiconductor layer formed over a surface of the insulating substrate, spaced apart from the pixel electrode, having source and drain regions formed to bot... | 09/04/2007 |
| 7217947 | Semiconductor light source and method of making A solid state light emitting device having a plurality of semiconductor finger members with side walls perpendicular to a substrate. Multiple quantum wells are formed on the side walls, and are also perpendicular to the substrate. Each multiple quantum well is sandw... | 05/15/2007 |
| 7190005 | GaN LED with solderable backside metal A light-emitting element (24) is disclosed. A light emitting diode (LED) includes a sapphire substrate (26) having front and back sides (33, 35), and a plurality of semiconductor layers (28, 30, 32) deposited on the front side (33)... | 03/13/2007 |
| 7170101 | Nitride-based semiconductor light-emitting device and manufacturing method thereof A nitride-based semiconductor light-emitting device includes a light-emitting element having an n-GaN substrate and a nitride-based semiconductor multilayer film formed on the n-GaN substrate. The n-GaN substrate of the light-emitting element is fixed to a mount sur... | 01/30/2007 |
| 7144748 | Electronic assembly/system with reduced cost, mass, and volume and increased efficiency and power density An LED display assembly, comprising a grid of electrical conductors; light emitting diodes in association with the grid and in electrical communication with the conductors that provide power for LED operation, the grid operable to receive heat from the diodes during... | 12/05/2006 |
| 7119422 | Solid-state semiconductor light emitting device A solid-state semiconductor light emitting device is disclosed. A heat sink that comprises a receiving cup for receiving a chip is provided. A leadframe that comprises a connection base is mounted above the heat sink, wherein the chip is connected to the leadframe v... | 10/10/2006 |
| 7112820 | Stacked capacitor having parallel interdigitized structure for use in thin film transistor liquid crystal display A capacitor structure includes a first conductive layer, a first insulating layer disposed on a substrate in sequence, a second conductive layer disposed on portions of the first insulating layer, a second insulating layer disposed on the second conductive layer and... | 09/26/2006 |
| 7105858 | Electronic assembly/system with reduced cost, mass, and volume and increased efficiency and power density An LED display assembly, comprising a grid of electrical conductors; light emitting diodes in association with the grid and in electrical communication with the conductors that provide power for LED operation, the grid operable to receive heat from the diodes during... | 09/12/2006 |
| 6399965 | Semiconductor light emitting device with high yield and low power consumption There is provided a semiconductor light emitting device having improved adhesion of an electrode by reducing defects in a crystal surface. An n-type AlGaInP lower clad layer 12, an AlGaInP active layer 13, a p-type AlGaInP upper clad layer 14, a p-type Al... | 06/04/2002 |
| 6278139 | Semiconductor light-emitting diode A semiconductor light emitting diode (10) is formed on an n-type GaAs substrate and includes: an AlGaInP based double heterojunction structure in which an active layer (16) is sandwiched between cladding layers (14, 18); an upper P-type contact layer 20; ... | 08/21/2001 |
| 6236067 | Semiconductor light emitting device using an AlGaInP group or AlGaAs group material A semiconductor light emitting device is disclosed. An emitting layer forming portion for forming an emitting layer made of a compound semiconductor of AlGaInP group or AlGaAs group including a n-type layer, an active layer and a p-type layer laid one on ... | 05/22/2001 |
