Did You Know...
...that in 1800 ether was first used by partyers as a fun diversion? Sniffing the gas led to hilarious and raucous laughter as people watched each other become more and more intoxicated and silly. Several doctors independently realized the value ether would have to anesthetize surgery patients. Of those who claimed rights to the "discovery," none had a happy ending. One had a seizure and died defending his rights. Another spent his life in an asylum because he had been denied acclaim. A third became addicted to chloroform and, in a New York City jail, he soaked a cloth in the drug, severed an artery and bled to death.
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| Number | Title | Issue Date |
| 7294867 | Semiconductor light generating device The semiconductor light generating device comprises a light generating region 3, a first AlX1Ga1-X1N semiconductor (0≦X1≦1) layer 5 and a second AlX2Ga1-X2N semiconductor (0≦X2≦1) layer ... | 11/13/2007 |
| 7193236 | Light emitting device using nitride semiconductor and fabrication method of the same A nitride based 3-5 group compound semiconductor light emitting device comprising: a substrate; a buffer layer formed above the substrate; a first In-doped GaN layer formed above the buffer layer; an InxGa1—xN/InyGa... | 03/20/2007 |
| 7190004 | Light emitting device A light emitting device includes a nitride semiconductor substrate with a resistivity of 0.5 Ω·cm or less, an n-type nitride semiconductor layer and a p-type nitride semiconductor layer placed more distantly from the nitride semiconductor substrate than the n-type... | 03/13/2007 |
| 7122846 | Oxygen-doped Al-containing current blocking layers in active semiconductor devices in photonic integrated circuits (PICs) In photonic integrated circuits (PICs) having at least one active semiconductor device, such as, a buried heterostructure semiconductor laser, LED, modulator, photodiode, heterojunction bipolar transistor, field effect transistor or other active device, a plurality ... | 10/17/2006 |
| 7105850 | GaN LED structure with p-type contacting layer grown at low-temperature and having low resistivity Disclosed is a GaN LED structure with a p-type contacting layer using Al—Mg-codoped In1−yGayN grown at low temperature, and having low resistivity. The LED structure comprises, from the bottom to top, a substrate, a buffer layer, an n-type ... | 09/12/2006 |
| 6692837 | Semi-insulating substrate, semiconductor optical device and fabrication method of semiconductor thin film A semi-insulating InP substrate in which a Ru-doped semi-insulating semiconductor layer is formed on the surface is provided, wherein the Ru-doped semi-insulating semiconductor layer has a complete semi-insulating property. The semiconductor optical devic... | 02/17/2004 |
| 6653213 | Structure and method for doping of III-V compounds A structure for doping of III-V compounds is provided. The structure is a multi-layered structure in which layers of dopant are alternated with layers of initially undoped III-V compound. Dopant diffuses from the layers of dopant into the layers of III-V ... | 11/25/2003 |
| 6583449 | Semiconductor device and method of forming a semiconductor device A semiconductor device includes group III-V layers formed over a substrate. At least one of the group III-V layers is doped with a dopant. The dopant includes a first dopant and one of a second dopant and an isovalent impurity. The first dopant has a cova... | 06/24/2003 |
| 6537838 | Forming semiconductor structures including activated acceptors in buried p-type III-V layers To allow hydrogen to out-diffuse from a buried Group III-nitride compound semiconductor p-type layer, the wafer is etched to form trenches in the p-type layer to expose sides of the p-type layer. After the etch, the wafer is then annealed. The duration an... | 03/25/2003 |
| 6528823 | Semiconductor light-emitting element and method of manufacturing the same A semiconductor light-emitting element, including a double hetero structure formed of III-V group compound semiconductor layers including an active layer acting as a light emitting layer and an n-type cladding layer and a p-type cladding layer having the ... | 03/04/2003 |
| 6469314 | Thin multi-well active layer LED with controlled oxygen doping An LED and a method of fabricating the LED which utilize controlled oxygen (O) doping to form at least one layer of the LED having an O dopant concentration which is correlated to the dominant emission wavelength of the LED. The O dopant concentration is ... | 10/22/2002 |
| 6449299 | Optical semiconductor device having an active layer containing N A laser diode includes a substrate, a lower cladding layer or a lower optical waveguide layer substantially free from Al and provided on the substrate, an active layer of a mixed crystal containing Ga and In as a group III element and N, As and/or P as a ... | 09/10/2002 |
| 6437374 | Semiconductor device and method of forming a semiconductor device A semiconductor device includes group III-V layers formed over a substrate. At least one of the group III-V layers is doped with a dopant. The dopant includes a first dopant and one of a second dopant and an isovalent impurity. The first dopant has a cova... | 08/20/2002 |
| 6388274 | Epitaxial wafer for infrared light-emitting device and light-emitting device using the same The present invention provides an epitaxial wafer which is obtained by sequentially forming, on an n-type GaAs substrate, a first n-type GaAlAs layer; a second n-type GaAlAs layer; an n-type GaAlAs cladding layer; a p-type GaAlAs active layer which has an... | 05/14/2002 |
| 6384429 | Light-emitting semiconductor device with reduced obstructions to light emission In one aspect of the invention, a light-emitting semiconductor device has a light-emitting layer with a certain bandgap energy, an upper cladding layer with a higher bandgap energy, a first diffusion area extending into the light-emitting layer, a second ... | 05/07/2002 |
| 6377598 | Semiconductor light-emitting device and method for producing the same A light emitting device includes: a plurality of n-type III-V group compound semiconductor layers; a plurality of p-type III-V group compound semiconductor layers; and an active layer. Carbon atoms and II-group element atoms are both added to at least one... | 04/23/2002 |
| 6351480 | Semiconductor light emitting device and method for producing the same A light emitting device includes: a plurality of n-type III-V group compound semiconductor layers; a plurality of p-type III-V group compound semiconductor layers; and an active layer. Carbon atoms and II-group element atoms are both added to at least one... | 02/26/2002 |
| 6351479 | Semiconductor laser having effective output increasing function Disclosed is a semiconductor laser capable of preventing diffusion of a p-type dopant to an active layer while performing sufficient carrier blocking, even when Zn is used as a p-type dopant, and obtaining high emission efficiency and high output by minim... | 02/26/2002 |
| 6348703 | Epitaxial wafer for infrared light-emitting device and light-emitting device using the same The present invention provides an epitaxial wafer comprising, on a p-type GaAs single-crystal substrate, a first p-type layer; a p-type cladding layer; a p-type active layer; and an n-type cladding layer, wherein the n-type cladding layer has a carrier co... | 02/19/2002 |
| 6329216 | Method of manufacturing an AlGaInP light emitting device using auto-doping A semiconductor light emitting device has a light emitting layer forming portion formed on the substrate and having an n-type layer and a p-type layer to provide a light emitting layer. A window layer is formed on a surface side of the light emitting laye... | 12/11/2001 |
| 6278139 | Semiconductor light-emitting diode A semiconductor light emitting diode (10) is formed on an n-type GaAs substrate and includes: an AlGaInP based double heterojunction structure in which an active layer (16) is sandwiched between cladding layers (14, 18); an upper P-type contact layer 20; ... | 08/21/2001 |
| 6218681 | Gallium arsenide phosphide epitaxial wafer and light emitting diode The present invention provides an epitaxial wafer having compound semiconductor epitaxial layer provided on a substrate, a total thickness of a portion of the compound semiconductor epitaxial layers comprises Ga, As and P as constituent elements being not... | 04/17/2001 |
| 6181723 | Semiconductor light emitting device with both carbon and group II element atoms as p-type dopants and method for producing the same A light emitting device includes: a plurality of n-type III-V group compound semiconductor layers; a plurality of p-type III-V group compound semiconductor layers; and an active layer. Carbon atoms and II-group element atoms are both added to at least one... | 01/30/2001 |
| 6144044 | Gallium phosphide green light-emitting device A GaP green light-emitting diode includes an n-type GaP single-crystal substrate on which is formed at least an n-type GaP layer, a nitrogen-doped n-type GaP layer and a nitrogen-doped p-type GaP layer. The concentration of carbon and/or sulfur in the nit... | 11/07/2000 |
| 6107647 | Semiconductor AlGaInP light emitting device A semiconductor light emitting device has a light emitting layer forming portion formed on the substrate and having an n-type layer and a p-type layer to provide a light emitting layer. A window layer is formed on a surface side of the light emitting laye... | 08/22/2000 |
| 6081540 | Semiconductor light emitting device with high light emission efficiency The invention provides a semiconductor light emitting device in which a light emitting layer is formed on a semiconductor substrate in a state of lattice mismatching with this semiconductor substrate, and by which light emission of high efficiency is obta... | 06/27/2000 |
| 6072196 | semiconductor light emitting devices Nitrogen-containing III-V alloy semiconductor materials have both a conduction band offset ƊEc and a valence band offset ƊEv large enough for the practical applications to light emitting devices. The semiconductor materials are capable of providing lase... | 06/06/2000 |
| 6048397 | GaAsP epitaxial wafer and a method for manufacturing it A GaAsP epitaxial wafer 10 which has a GaAs1-x Px (0.45 | 04/11/2000 |
| 6043509 | Light-emitting diode having moisture-proof characteristics and high output power A Light-emitting diode having improved moisture resistance characteristics comprises a p-type gallium arsenide substrate and four epitaxial layers of Alx Ga1-x As (22, 23, 24 and 25). These epitaxial layers comprises an intervening l... | 03/28/2000 |
| 6009113 | Semiconductor laser device having clad and contact layers respectively doped with Mg and method for fabricating the same A semiconductor laser device having high performance, low operating voltage, and long service life, and a method for fabricating the same are provided. A semiconductor multilayer film including an active layer for use of laser beam oscillation is stacked ... | 12/28/1999 |
| 5986288 | Epitaxial wafer for a light-emitting diode and a light-emitting diode An epitaxial wafer for a light-emitting diode includes an n-type GaP single-crystal substrate, and at least an n-type semiconductor epitaxial layer and a p-type semiconductor epitaxial layer formed on the substrate. The substrate has a boron concentration... | 11/16/1999 |
| 5932004 | Semiconductor laser device having clad and contact layers respectively doped with MG and method for fabricating the same A semiconductor laser device having high performance, low operating voltage, and long service life, and a method for fabricating the same are provided. A semiconductor multilayer film including an active layer for use of laser beam oscillation is stacked ... | 08/03/1999 |
| 5912476 | Compound semiconductor epitaxial wafer A compound semiconductor epitaxial wafer added with nitrogen to provide a high luminous efficiency. Epitaxial layers are grown on a single crystalline substrate 4 made of gallium phosphide or gallium arsenide to form a compound semiconductor epitaxial waf... | 06/15/1999 |
| 5909051 | Minority carrier semiconductor devices with improved stability A method for improving the operating stability of compound semiconductor minority carrier devices and the devices created using this method are described. The method describes intentional introduction of impurities into the layers adjacent to the active r... | 06/01/1999 |
| 5909614 | Method of improving performance of semiconductor light emitting device A modification process of formation of microscopic clusters (quantum dots) in a semiconductor material and changing refractive index in the near-surface region of the material is used for improving performance of different semiconductor light emitting dev... | 06/01/1999 |
| 5898192 | Light emitting diode with improved luminous efficiency having a contact structure disposed on a frosted outer surface A light emitting diode for generating preferably green light with improved luminous efficiency. A number of epitaxial layers suitable for the light emission is arranged on a doped semiconductor substrate wafer of GaP. The surface of the epitaxial layers i... | 04/27/1999 |
| 5888843 | Method for making light-emitting diode having improved moisture resistance characteristics A light-emitting diode having improved moisture resistance characteristics comprises a p-type gallium arsenide substrate and four epitaxial layers of Alx Ga1-x As (22, 23, 24 and 25). These epitaxial layers comprises an intervening l... | 03/30/1999 |
| 5834792 | Articles comprising doped semiconductor material The disclosed novel doping method makes it possible to tailor the effective activation energy of a dopant species in semiconductor material. The method involves formation of very thin layers of δ-doped second semiconductor material in first semiconductor... | 11/10/1998 |
| 5828087 | AlInAs semiconductor device contaning Si and P The semiconductor device includes at least an Si-doped AlInAs layer formed on an InP substrate. The Si-doped AlInAs layer contains phosphorus.... | 10/27/1998 |
| 5814838 | Light emitting semiconductor element with ZN doping An LED is disclosed which has a laminated semiconductor body with an anode and a cathode formed on a pair of opposite faces thereof. Among the layers of the semiconductor body are an active layer of AlGaInP semiconductor material, an n type cladding layer... | 09/29/1998 |
