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| Number | Title | Issue Date |
| 7408199 | Nitride semiconductor laser device and nitride semiconductor device A nitride semiconductor laser device comprises, on a principle face of a nitride semiconductor substrate: a nitride semiconductor layer having a first conductivity type; an active layer comprising indium, and a nitride semiconductor layer having a second conductivit... | 08/05/2008 |
| 7374959 | Two-wavelength semiconductor laser device and method of manufacturing the same A two-wavelength semiconductor laser device includes a first conductive material substrate having thereon first and second regions separated from each other. A first semiconductor laser diode is formed on the first region. A non-active layer is formed on the second ... | 05/20/2008 |
| 7341879 | Method of manufacturing a point source light-emitting diode A point source light emitting-diode (LED) comprises a substrate, an epitaxy structure, a first electrode, an isolation layer, a bonding layer, a contact layer, and a connection bridge. The epitaxy structure is located on the substrate, and the substrate has a patter... | 03/11/2008 |
| 7335920 | LED with current confinement structure and surface roughening An LED having a p-type layer of material with an associated p-contact, an n-type layer of material with an associated n-contact and an active region between the p-type layer and the n-type layer, includes a confinement structure that is formed within one of the p-ty... | 02/26/2008 |
| 7323722 | Semiconductor optical device In a semiconductor optical device, a first conductive type semiconductor region is provided on a surface of GaAs. The first conductive type semiconductor region has a first region and a second region. An active layer is provided on the first region of the first cond... | 01/29/2008 |
| 7291873 | High electron mobility epitaxial substrate A compound semiconductor epitaxial substrate for use in a strain channel high electron mobility field effect transistor, comprising an InGaAs layer as a strain channel layer 6 and AlGaAs layers containing n-type impurities as back side and front side electron... | 11/06/2007 |
| 7187007 | Nitride semiconductor device and method of manufacturing the same The present invention provides a nitride semiconductor device. The nitride semiconductor device comprises an n-type nitride semiconductor layer formed on a nitride crystal growth substrate. An active layer is formed on the n-type nitride semiconductor layer. A first... | 03/06/2007 |
| 7148514 | Nitride semiconductor light emitting diode and fabrication method thereof The invention relates to a nitride semiconductor LED and a fabrication method thereof. In the LED, a first nitride semiconductor layer, an active region a second nitride semiconductor layer of a light emitting structure are formed in their order on a transparent sub... | 12/12/2006 |
| 7145180 | Method of fabricating a light emitting device, and light emitting device In the fabricating of a light emitting device, a light emitting layer portion 24 and a current spreading layer 7, respectively composed of a Group III-V compound semiconductor, are stacked on a single crystal substrate. The light emitting layer portion... | 12/05/2006 |
| 6700139 | GaP-base semiconductor light emitting device The main surface on the side of a p-type layer of a GaP-base semiconductor is defined as a first main surface, and the main surface opposite thereto as a second main surface. The second main surface is lapped and then etched using aqua regia to thereby co... | 03/02/2004 |
| 6697412 | Long wavelength laser diodes on metamorphic buffer modified gallium arsenide wafers A light-emitting device includes a GaAs substrate, a light-emitting structure disposed above the substrate and capable of emitting light having a wavelength of about 1.3 microns to about 1.55 microns, and a buffer layer disposed between the substrate and ... | 02/24/2004 |
| 6692837 | Semi-insulating substrate, semiconductor optical device and fabrication method of semiconductor thin film A semi-insulating InP substrate in which a Ru-doped semi-insulating semiconductor layer is formed on the surface is provided, wherein the Ru-doped semi-insulating semiconductor layer has a complete semi-insulating property. The semiconductor optical devic... | 02/17/2004 |
| 6677618 | Compound semiconductor light emitting device Disclosed compound semiconductor light emitting devices have a substrate, a compound semiconductor layer, formed on the substrate, containing a first conductive type clad layer, an active layer, and a second conductive type clad layer, and a resonator str... | 01/13/2004 |
| 6661031 | Resonant-cavity light-emitting diode and optical transmission module using the light-emitting diode A resonant-cavity light-emitting diode includes a semiconductor light-emitting layer sandwiched between an under and an upper semiconductor distributed Bragg reflector mirror layer, which are formed on the substrate, a light extracting section formed on t... | 12/09/2003 |
| 6639254 | Epitaxial layer capable of exceeding critical thickness A substrate has a principal surface exposing a first semiconductor material. A micro structure is disposed on the principal surface of the substrate. The micro structure is made of a second semiconductor material having a lattice constant different from a... | 10/28/2003 |
| 6623171 | Socket and a system for optoelectronic interconnection and a method of fabricating such socket and system It is an object of the present invention to disclose a socket that is easy in use for optoelectrical interconnection. The socket of the invention can be handled as a compact device that allows the interconnection between electrical signals and external ap... | 09/23/2003 |
| 6621106 | Light emitting diode A light emitting diode (LED) of a double hetero-junction type has a light-emitting layer of a GaAlInP material, a p-type cladding layer and an n-type cladding layer sandwiching the light-emitting layer therebetween, a p-side electrode formed on the p-type... | 09/16/2003 |
| 6617606 | Light-emitting semiconductor element A light-emitting diode having an excellent high-speed response characteristic and capable of giving a large light output with a small variation of the light output during the operation is provided. In the light-emitting diode, an active layer comprising a... | 09/09/2003 |
| 6611007 | Method for locally modifying the effective bandgap energy in indium gallium arsenide phosphide (InGaAsP) quantum well structures A novel quantum well intermixing method for regionally modifying the bandgap properties of InGaAsP quantum well structures is disclosed. The method induces bandgap wavelength blue shifting and deep states for reducing carrier lifetime within InGaAsP quant... | 08/26/2003 |
| 6605486 | Bipolar transistor, semiconductor light emitting device and semiconductor device In a GaAs type semiconductor device, Inp Ga1-p N (0 | 08/12/2003 |
| 6586773 | Semiconductor light-emitting device A semiconductor light-emitting device, including a first substrate of a first conductivity type, a first bonding layer provided on said first substrate and consisting essentially of a GaP material of the first conductivity type, a second bonding layer pro... | 07/01/2003 |
| 6583448 | Light emitting diode and method for manufacturing the same The present invention disclosed a light emitting diode (LED) and method for manufacturing the same. The light emitting diode includes a transparent substrate connected to an epitaxial layer with absorption substrate via a transparent adhesive layer. Then,... | 06/24/2003 |
| 6580096 | Window for light-emitting diode A light-emitting diode (LED) constructed of AlGaInP compounds includes a multi-layer window having, in the order of formation, a lightly doped first layer formed of p doped GaP; a low impedance second layer formed of p GaAs; an amorphous conducting layer ... | 06/17/2003 |
| 6576933 | Semiconductor light emitting device and method for manufacturing same There are provided a semiconductor light emitting device wherein the variation in tone in each device is small and the variation in tone due to deterioration with age is also small, and a method for manufacturing the same. The semiconductor light emitting... | 06/10/2003 |
| 6563850 | Light-emitting device and fabricating method thereof A light-emitting device includes a first guide layer; a second guide layer; and an active layer interposed between the first guide layer and the second guide layer. The active layer has a multiple quantum well structure including a plurality of quantum we... | 05/13/2003 |
| 6546031 | Extended wavelength strained layer lasers having strain compensated layers Several methods are used in novel ways with newly identified and viable parameters to decrease the peak transition energies of the pseudomorphic InGaAs/GaAs heterostructures. These techniques, taken separately or in combination, suffice to permit operatio... | 04/08/2003 |
| 6525335 | Light emitting semiconductor devices including wafer bonded heterostructures A method of forming a light emitting semiconductor device includes fabricating a stack of layers comprising an active region, and wafer bonding a structure including a carrier confinement semiconductor layer to the stack. A light emitting semiconductor de... | 02/25/2003 |
| 6504171 | Chirped multi-well active region LED A light emitting device and a method of increasing the light output of the device utilize a chirped multi-well active region to increase the probability of radiative recombination of electrons and holes within the light emitting active layers of the activ... | 01/07/2003 |
| 6498050 | Bipolar transistor, semiconductor light emitting device and semiconductor device In a GaAs type semiconductor device, Inp Ga1-p N (0 | 12/24/2002 |
| 6486490 | Light-emitting device with a quantum-wave interference layer An emission layer is formed in a p-layer, and an electron reflecting layer and a hole reflecting layer are formed sandwiching the emission layer. Each of the electron reflecting layer and the hole reflecting layer is constituted by a quantum-wave interfer... | 11/26/2002 |
| 6468818 | Method for producing a high-luminance semiconductor light-emitting device capable of operating at a low voltage A semiconductor light-emitting device has a light-emitting section comprised of at least a lower clad layer, an active layer and an upper clad layer which are formed on a compound semiconductor substrate and a layer grown on the upper clad layer of the li... | 10/22/2002 |
| 6462358 | Light emitting diode and method for manufacturing the same The present invention disclosed a light emitting diode (LED) and method for manufacturing the same. The light emitting diode includes a transparent substrate connected to an epitaxial layer with absorption substrate via a transparent adhesive layer. Then,... | 10/08/2002 |
| 6459098 | Window for light emitting diode A Light Emitting Diode (LED) constructed of AlGaInP compounds includes a multi layer window which improves the efficiency of the diode. The window, in the order of formation, includes a lightly doped first layer formed of p doped GaP; a low impedance seco... | 10/01/2002 |
| 6449299 | Optical semiconductor device having an active layer containing N A laser diode includes a substrate, a lower cladding layer or a lower optical waveguide layer substantially free from Al and provided on the substrate, an active layer of a mixed crystal containing Ga and In as a group III element and N, As and/or P as a ... | 09/10/2002 |
| 6440765 | Method for fabricating an infrared-emitting light-emitting diode A method for fabricating an infrared-emitting light-emitting diode in which a layer sequence is applied onto a semiconductor substrate, preferably composed of GaAs. The layer sequence has, proceeding from the semiconductor substrate, a first AlGaAs cover ... | 08/27/2002 |
| 6433364 | Semiconductor light emitting device capable of increasing light emitting efficiency On an n-GaP substrate transparent against a radiation light of an InAlGaP based semiconductor element, a lattice distortion relaxation layer, a clad layer 13, an active layer, and a clad layer are created with InAlGaP. On top of the layers, there is forme... | 08/13/2002 |
| 6426518 | Semiconductor light emitting device A light emitting layer forming portion (9) comprising InGaAlP based compound semiconductor and forming a light emitting layer is deposited on an n-type GaAs substrate (1), a p-type current dispersion layer (5) comprising AlGaAs based compound semiconducto... | 07/30/2002 |
| 6417522 | Led with alternated strain layer The present invention relates to light omitting diodes having an AlGaInP active layer disposed between two cladding layers of AlGaInP, with a strain layer grown on the second cladding layer and comprising a superlattice structure in the form of a pluralit... | 07/09/2002 |
| 6413791 | Epitaxial wafer and manufacturing method thereof as well as light-emitting diode with enhanced luminance An epitaxial semiconductor crystal plate or wafer capable of attaining increased reliability with enhanced luminance, a manufacturing method thereof, as well as a light-emitting diode (LED). It has been found that epitaxial wafers with enhanced illuminanc... | 07/02/2002 |
| 6399409 | Method for fabricating semiconductor light emitting element The semiconductor light emitting element of the present invention includes: a compound semiconductor substrate having a first conductivity type; a light emitting layer; a compound semiconductor interface layer having a second conductivity type and not con... | 06/04/2002 |
