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| Number | Title | Issue Date |
| 7427785 | Nitride-based light emitting device and manufacturing method thereof A light emitting device according to an exemplary embodiment of the present invention includes: an n-type cladding layer; a p-type cladding layer; an active layer interposed between the n-type cladding layer and the p-type cladding layer; and an ohmic contact layer ... | 09/23/2008 |
| 7187007 | Nitride semiconductor device and method of manufacturing the same The present invention provides a nitride semiconductor device. The nitride semiconductor device comprises an n-type nitride semiconductor layer formed on a nitride crystal growth substrate. An active layer is formed on the n-type nitride semiconductor layer. A first... | 03/06/2007 |
| 7148514 | Nitride semiconductor light emitting diode and fabrication method thereof The invention relates to a nitride semiconductor LED and a fabrication method thereof. In the LED, a first nitride semiconductor layer, an active region a second nitride semiconductor layer of a light emitting structure are formed in their order on a transparent sub... | 12/12/2006 |
| 7129526 | White color light emitting device An ultraviolet type white color light emitting device (Q) including a 340 nm–400 nm ultraviolet InGaN-LED, a first fluorescence plate of ZnS doped with more than 1×1017cm−3 Al, In, Ga, Cl, Br or I for absorbing ultraviolet rays and produci... | 10/31/2006 |
| 7105850 | GaN LED structure with p-type contacting layer grown at low-temperature and having low resistivity Disclosed is a GaN LED structure with a p-type contacting layer using Al—Mg-codoped In1−yGayN grown at low temperature, and having low resistivity. The LED structure comprises, from the bottom to top, a substrate, a buffer layer, an n-type ... | 09/12/2006 |
| 6541799 | Group-III nitride semiconductor light-emitting diode A Group-III nitride semiconductor light-emitting diode having an electrically conducting silicon (Si) single crystal substrate having on an upper surface thereof at least a light-emitting part having a pn-heterojunction structure composed of a Group-III n... | 04/01/2003 |
| 6063644 | Light-emitting element and array with etched surface, and fabrication method thereof A light-emitting element, or array of light-emitting elements, is formed by diffusion of an impurity into a semiconductor substrate, creating a light-emitting region. Following the diffusion, the surface zone of the light-emitting region, which includes c... | 05/16/2000 |
| 5986288 | Epitaxial wafer for a light-emitting diode and a light-emitting diode An epitaxial wafer for a light-emitting diode includes an n-type GaP single-crystal substrate, and at least an n-type semiconductor epitaxial layer and a p-type semiconductor epitaxial layer formed on the substrate. The substrate has a boron concentration... | 11/16/1999 |
| 5939733 | Compound semiconductor device having a group III-V compound semiconductor layer containing therein T1 and As A compound semiconductor device includes a substrate and a group III-V compound semiconductor layer provided on the substrate, wherein the group III-V compound semiconductor layer contains As as a group V element and Tl as a group III element.... | 08/17/1999 |
| 5856208 | Epitaxial wafer and its fabrication method The present invention relates to an epitaxial wafer including a PN junction, which is improved in terms of light output and can have a good-enough ohmic electrode formed thereon. Epitaxial layers are formed of GaAs1-x Px where 0.45 | 01/05/1999 |
| 5751026 | Epitaxial wafer of gallium arsenide phosphide In an epitaxial wafer of gallium arsenide phosphide, a single crystal substrate is provided thereon with a gallium arsenide phosphide layer with a varying mixed crystal ratio, a gallium arsenide phosphide layer with a constant mixed crystal ratio, and a n... | 05/12/1998 |
| 5665984 | Light-emitting diode A light-emitting diode comprises a first layer of Si-doped N-type Ga1-x Alx As, a second layer of Si-doped P-type Ga1-y Aly As and a third layer of P-type Ga1-z Alz As, in that order, in wh... | 09/09/1997 |
| 5597761 | Semiconductor light emitting device and methods of manufacturing it An epitaxial layer(s) of compound semiconductor alloy doped with nitrogen and represented by the formula (Alx Ga1-x)y In1-y P (0 | 01/28/1997 |
| 5525539 | Method for forming a light emitting diode for use as an efficient emitter or detector of light at a common wavelength An infrared LED can function efficiently as both an emitter and a detector at a common wavelength without undesirable characteristics found in avalanche diodes. The LED comprises a graded-bandgap Ga1-x Alx As semiconductor material w... | 06/11/1996 |
| 5483088 | Compounds and infrared devices including In1-x Tlx Q, where Q is As1-y Py and 0ࣘyࣘ1 A semiconductor layer of In1-x Tlx Q carried on a substrate forms an infrared device, where Q is selected from the group consisting essentially of As1-y Py and 0 | 01/09/1996 |
| 5448082 | Light emitting diode for use as an efficient emitter or detector of light at a common wavelength and method for forming the same An infrared LED can function efficiently as both an emitter and a detector at a common wavelength without undesirable characteristics found in avalanche diodes. The LED comprises a graded-bandgap Ga1-x Alx As semiconductor material w... | 09/05/1995 |
| 5442201 | Semiconductor light emitting device with nitrogen doping An epitaxial layer(s) of compound semiconductor alloy doped with nitrogen and represented by the formula (Alx Ga1-x)y In1-y P (0 | 08/15/1995 |
| 5410178 | Semiconductor films Semiconductor films of the formula (InP)1-x (TlP3)x on InP substrates which cover the bandgap of 2-12 μm for use with long wavelength infrared detector and laser applications are disclosed.... | 04/25/1995 |
| 5329135 | Light emitting device for achieving high luminous efficiency and high saturation level of light output A light emitting device has an indium gallium arsenide phosphide luminescent layer between a first clad layer of n-type indium phosphide and a second clad layer of p-type indium phosphide, and a strained barrier layer of p-type indium aluminum arsenide is... | 07/12/1994 |
| 5204284 | Method of making a high band-gap opto-electronic device A high band-gap opto-electronic device is formed by epitaxially growing the device section in a lattice-matched (Alx Ga1-x)y In1-y P-GaAs system. The band-gap of the epitaxial layer increases with x. Instead of ... | 04/20/1993 |
| 5194922 | Luminescent semiconductor element Described is a luminescent semiconductor element having the following structure: a first thick connecting semiconductor layer of uniform material composition, a thin over-graded layer arranged on the first semiconductor layer and comprising connecting sem... | 03/16/1993 |
| 5060028 | High band-gap opto-electronic device A high band-gap opto-electronic device is formed by epitaxially growing the device section in a lattice-matched (Alx Ga1-x)y In1-y P-GaAs system. The band-gap of the epitaxial layer increases with x. Instead of ... | 10/22/1991 |
| 4987472 | Compound semiconductor epitaxial wafer An epitaxial wafer of gallium phosphide single crystal having an epitaxial layer of gallium phosphide arsenide mixed crystal grown on the surface by the method of vapor-phase epitaxial growth can be freed from surface defects and greatly improved in respe... | 01/22/1991 |
| 4689125 | Fabrication of cleaved semiconductor lasers A process is described for making semiconductor lasers with cleaved facets for end mirrors. The process involves electrochemically photoetching slots with deep, narrow cross-sections in a wafer and applying stress to cleave the wafer in the desired place.... | 08/25/1987 |
| 4616241 | Superlattice optical device A semiconductor optical device which includes a superlattice having direct transitions between conduction band and valence band states with the same wave vector, the superlattice being formed from a plurality of alternating layers of two or more different... | 10/07/1986 |
| 4430740 | Long-wavelength semiconductor laser A semiconductor laser wherein a wide range of laser emission wavelengths can be obtained by varying the composition of monocrystalline alloys employed as semiconductor material. The semiconductor structure comprises on a monocrystalline indium phosphide s... | 02/07/1984 |
| 4374390 | Dual-wavelength light-emitting diode A dual-wavelength light-emitting diode (10) is disclosed wherein at least two quaternary layers (102 and 104) are epitaxially grown on indium phosphide substrate (100) and a top indium phosphide layer (105) of the opposite conductivity type is grown to es... | 02/15/1983 |
| 4372791 | Method for fabricating DH lasers Double-heterostructure (DH) diode lasers based upon very thin epitaxial layers of Gax In1-x Asy P1-y grown on and lattice-matched to oriented InP substrates are disclosed. A preferred method for fabricating such... | 02/08/1983 |
| 4287485 | GaInAsP/InP Double-heterostructure lasers Double-heterostructure (DH) diode lasers based upon very thin epitaxial layers of Gax In1-x Asy P1-y grown on and lattice-matched to oriented InP substrates are disclosed. A preferred method for fabricating such... | 09/01/1981 |
| 4284467 | Method for making semiconductor material Useful semiconductor materials in which a p-n junction may be formed are made from compositions of the quaternary Gay In1-y As1-x Px compound alloy system having values of x and y greater than 0.005 and less tha... | 08/18/1981 |
| 4207122 | Infra-red light emissive devices In (Sb0.1 As0.9) light emissive diodes and lasers are grown on Ga Sb substrates to give lattice matching. Ga Sb has higher band gap, high refractive index therefore gives electrical, but not optical, confinement required for laser ac... | 06/10/1980 |
| 4086608 | Light emitting diode A light emitting diode with emission wavelength in the 1.06μm region suitable for use with the 1.06μm transmission window in optical fibers. The diode is fabricated by liquid phase epitaxial growth of p and n type InAsx P1-x layers... | 04/25/1978 |
| 4072544 | Growth of III-V layers containing arsenic, antimony and phosphorus Gallium arsenide antimonide phosphide (GaAsSbP) has been successfully grown on a gallium arsenide substrate by liquid phase epitaxy. A critical amount of phosphorus initially in growth solution is depleted with consequent grading of lattice constant and b... | 02/07/1978 |
| 4032951 | Growth of III-V layers containing arsenic, antimony and phosphorus, and device uses Gallium arsenide antimonide phosphide (GaAsSbP) has been successfully grown on a gallium arsenide substrate by liquid phase epitaxy. A critical amount of phosphorus initially in growth solution is depleted with consequent grading of lattice constant and b... | 06/28/1977 |
