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| Number | Title | Issue Date |
| 7432534 | III-nitride semiconductor light emitting device The present invention relates to a III-nitride semiconductor light emitting device comprising a plurality of III-nitride semiconductor layers including an active layer emitting light by recombination of electrons and holes, the plurality of III-nitride semiconductor... | 10/07/2008 |
| 7427785 | Nitride-based light emitting device and manufacturing method thereof A light emitting device according to an exemplary embodiment of the present invention includes: an n-type cladding layer; a p-type cladding layer; an active layer interposed between the n-type cladding layer and the p-type cladding layer; and an ohmic contact layer ... | 09/23/2008 |
| 7411273 | Nitride semiconductor substrate In an independent GaN film manufactured by creating a GaN layer on a base heterosubstrate using vapor-phase deposition and then removing the base substrate, owing to layer-base discrepancy in thermal expansion coefficient and lattice constant, bow will be a large ±... | 08/12/2008 |
| 7410819 | Nitride semiconductor light-emitting device and method for producing same In a method for producing a nitride semiconductor light-emitting device according to the present invention, first, a nitride semiconductor substrate having groove portions formed is prepared. An underlying layer comprising nitride semiconductor is formed on the nitr... | 08/12/2008 |
| 7388234 | Semiconductor device and method of fabricating the same and method of forming nitride based semiconductor layer A GaN layer is grown on a sapphire substrate, an SiO2 film is formed on the GaN layer, and a GaN semiconductor layer including an MQW active layer is then grown on the GaN layer and the SiO2 film using epitaxial lateral overgrowth. The GaN base... | 06/17/2008 |
| 7364929 | Nitride semiconductor based light-emitting device and manufacturing method thereof An object of the present invention is to provide a nitride semiconductor based light-emitting device, which is low in operating voltage reduction and is high in performance, and a manufacturing method thereof. A first metal film is formed on a P-type conducti... | 04/29/2008 |
| 7348602 | Nitride semiconductor device The present invention provides a nitride semiconductor light emitting device with an active layer of the multiple quantum well structure, in which the device has an improved luminous intensity and a good electrostatic withstanding voltage, thereby allowing the expan... | 03/25/2008 |
| 7345317 | Light-radiating semiconductor component with a luminescene conversion element The light-radiating semiconductor component has a radiation-emitting semiconductor body and a luminescence conversion element. The semiconductor body emits radiation in the ultraviolet, blue and/or green spectral region and the luminescence conversion element conver... | 03/18/2008 |
| 7339255 | Semiconductor device having bidirectionally inclined toward <1-100> and <11-20> relative to {0001} crystal planes A semiconductor substrate encompasses a GaN substrate and a single-crystal layer formed of III-V nitride compound semiconductor epitaxially grown on the GaN substrate. The GaN substrate has a surface orientation defined by an absolute value of an off-angle of the su... | 03/04/2008 |
| 7327036 | Method for depositing a group III-nitride material on a silicon substrate and device therefor The present invention is related to a device comprising a substrate comprising a silicon substrate having a porous top layer, a second layer on said top layer, said second layer made of a material comprising Ge, and a further layer of a Group III-nitride material on... | 02/05/2008 |
| 7271404 | Group III-V nitride-based semiconductor substrate and method of making same A group III-V nitride-based semiconductor substrate having a group III-V nitride-based semiconductor thick film with a same composition in the entire film. The thick film has a first region with a predetermined impurity concentration and a second region with an impu... | 09/18/2007 |
| 7250638 | Method of fabricating vertical structure LEDs A method of fabricating semiconductor devices, such as GaN LEDs, on insulating substrates, such as sapphire. Semiconductor layers are produced on the insulating substrate using normal semiconductor processing techniques. Trenches that define the boundaries of the in... | 07/31/2007 |
| 7198971 | Nitride semiconductor thin film having fewer defects and method of growing the same The present invention relates to a nitride semiconductor thin film having less defects and a method of growing the same. According to the present invention, the nitride semiconductor thin film with lower defect density can be manufactured by forming grooves on a sub... | 04/03/2007 |
| 7170108 | Semiconductor light-emitting device and method for fabricating the same An n-type buffer layer composed of n-type GaN, an n-type cladding layer composed of n-type AlGaN, an n-type optical confinement layer composed of n-type GaN, a single quantum well active layer composed of undoped GaInN, a p-type optical confinement layer composed of... | 01/30/2007 |
| 7161301 | Nitride light-emitting device having an adhesive reflecting layer A nitride light-emitting device having an adhesive reflecting layer includes a transparent adhesive layer, a nitride light-emitting stack layer and a metal reflecting layer. The transparent adhesive layer adheres the nitride light-emitting stack layer and the metal ... | 01/09/2007 |
| 7148514 | Nitride semiconductor light emitting diode and fabrication method thereof The invention relates to a nitride semiconductor LED and a fabrication method thereof. In the LED, a first nitride semiconductor layer, an active region a second nitride semiconductor layer of a light emitting structure are formed in their order on a transparent sub... | 12/12/2006 |
| 7145180 | Method of fabricating a light emitting device, and light emitting device In the fabricating of a light emitting device, a light emitting layer portion 24 and a current spreading layer 7, respectively composed of a Group III-V compound semiconductor, are stacked on a single crystal substrate. The light emitting layer portion... | 12/05/2006 |
| 7105850 | GaN LED structure with p-type contacting layer grown at low-temperature and having low resistivity Disclosed is a GaN LED structure with a p-type contacting layer using Al—Mg-codoped In1−yGayN grown at low temperature, and having low resistivity. The LED structure comprises, from the bottom to top, a substrate, a buffer layer, an n-type ... | 09/12/2006 |
| 7098484 | Epitaxial substrate for compound semiconductor light-emitting device, method for producing the same and light-emitting device In order to improve light-emission efficiency without degrading protection performance of a light-emitting layer structure a three p-type layer structure composed of first to third layers is provided in contact with a light-emitting layer structure. The first layer ... | 08/29/2006 |
| 7087922 | Light-emitting diode structure A gallium-nitride based light-emitting diode structure includes a digital penetration layer to raise its reverse withstanding voltage and electrostatic discharge. The digital penetration layer is formed by alternate stacking layers of AlxInyGa | 08/08/2006 |
| 6607595 | Method for producing a light-emitting semiconductor device Disclosed herein are (1) a light-emitting semiconductor device that uses a gallium nitride compound semiconductor (AlX Ga1-x N) in which the n-layer of n-type gallium nitride compound semiconductor (Alx Ga1-X N)... | 08/19/2003 |
| 6593599 | Light-emitting semiconductor device using gallium nitride group compound Disclosed herein are (1) a light-emitting semiconductor device that uses a gallium nitride compound semiconductor (Alx Ga1-x N) in which the n-layer of n-type gallium nitride compound semiconductor (Alx Ga1-x N)... | 07/15/2003 |
| 6590336 | Light emitting device having a polar plane piezoelectric film and manufacture thereof The light emitting device comprises: a substrate; and a first piezoelectric film held on the substrate and having one of a positive plane and a negative plane, the first piezoelectric film functioning as a light emitting layer.... | 07/08/2003 |
| 6515313 | High efficiency light emitters with reduced polarization-induced charges Naturally occurring polarization-induced electric fields in a semiconductor light emitter with crystal layers grown along a polar direction are reduced, canceled or reversed to improve the emitter's operating efficiency and carrier confinement. This is ac... | 02/04/2003 |
| 6472690 | Gallium nitride group compound semiconductor Disclosed herein are (1) a light-emitting semiconductor device that uses a gallium nitride compound semiconductor (Alx Ga1-x N) in which the n-layer of n-type gallium nitride compound semiconductor (Alx Ga1-x N)... | 10/29/2002 |
| 6472689 | Light emitting device Disclosed herein are (1) a light-emitting semiconductor device that uses a gallium nitride compound semiconductor (Alx Ga1-x N) in which the n-layer of n-type gallium nitride compound semiconductor (Alx Ga1-x N)... | 10/29/2002 |
| 6413627 | GaN single crystal substrate and method of producing same A freestanding GaN single crystal substrate is made by the steps of preparing a (111) GaAs single crystal substrate, forming a mask having periodically arranged windows on the (111) GaAs substrate, making thin GaN buffer layers on the GaAs substrate in th... | 07/02/2002 |
| 6362017 | Light-emitting semiconductor device using gallium nitride group compound Disclosed herein are (1) a light-emitting semiconductor device that uses a gallium nitride compound semiconductor (Alx Ga1-x N) in which the n-layer of n-type gallium nitride compound semiconductor (Alx Ga1-x N)... | 03/26/2002 |
| 6249012 | Light emitting semiconductor device using gallium nitride group compound A semiconductor device having an n-type layer of gallium nitride that is doped with silicon and has a resistively ranging from 3×10-1 Ωcm to 8×10-3 Ωcm or a carrier concentration ranging from 6×1016 /cm3 to... | 06/19/2001 |
| 6123768 | Method for the preparation and doping of highly insulating monocrystalline gallium nitride thin films This invention relates to a method of preparing highly insulating GaN single crystal films in a molecular beam epitaxial growth chamber. A single crystal substrate is provided with the appropriate lattice match for the desired crystal structure of GaN. A ... | 09/26/2000 |
| 5912477 | High efficiency light emitting diodes Light emitting diodes are disclosed which have increased external efficiency and are formed from silicon carbide substrates. Diodes are produced by a method which includes directing a beam of laser light at one surface of a portion of silicon carbide, and... | 06/15/1999 |
| 5877558 | Gallium nitride-based III-V group compound semiconductor A gallium nitride-based III-V Group compound semiconductor device has a gallium nitride-based III-V Group compound semiconductor layer provided over a substrate, and an ohmic electrode provided in contact with the semiconductor layer. The ohmic electrode ... | 03/02/1999 |
| 5770887 | Gan single crystal A GaN single crystal having a full width at half-maximum of the double-crystal X-ray rocking curve of 5-250 sec and a thickness of not less than 80 μm, a method for producing the GaN single crystal having superior quality and sufficient thickness permitt... | 06/23/1998 |
| 5725674 | Device and method for epitaxially growing gallium nitride layers An epitaxial growth system comprises a housing around an epitaxial growth chamber. A substrate support is located within the growth chamber. A gallium source introduces gallium into the growth chamber and directs the gallium towards the substrate. An acti... | 03/10/1998 |
| 5657335 | P-type gallium nitride Several methods have been found to make p-type gallium nitride. P-type gallium nitride has long been sought for electronic devices. N-type gallium nitride is readily available. Discovery of p-type gallium nitride and the methods for making it will enable ... | 08/12/1997 |
| 5652434 | Gallium nitride-based III-V group compound semiconductor A gallium nitride-based III-V Group compound semiconductor device has a gallium nitride-based III-V Group compound semiconductor layer provided over a substrate, and an ohmic electrode provided in contact with the semiconductor layer. The ohmic electrode ... | 07/29/1997 |
| 5633192 | Method for epitaxially growing gallium nitride layers An epitaxial growth system comprises a housing around an epitaxial growth chamber. A substrate support is located within the growth chamber. A gallium source introduces gallium into the growth chamber and directs the gallium towards the substrate. An acti... | 05/27/1997 |
| 5631190 | Method for producing high efficiency light-emitting diodes and resulting diode structures A method of producing light emitting diodes from silicon carbide with increased external efficiency is disclosed which includes directing a beam of laser light at one surface of a portion of silicon carbide, and in which the laser light is sufficient to v... | 05/20/1997 |
| 5563422 | Gallium nitride-based III-V group compound semiconductor device and method of producing the same A gallium nitride-based III-V Group compound semiconductor device has a gallium nitride-based III-V Group compound semiconductor layer provided over a substrate, and an ohmic electrode provided in contact with the semiconductor layer. The ohmic electrode ... | 10/08/1996 |
| 5468678 | Method of manufacturing P-type compound semiconductor A method for manufacturing a III-V Group compound or a II-VI Group compound semiconductor element by VPE, comprising the step of annealing a grown compound at 400° C. or higher, or irradiating electron beam the grown compound at 600° C. or higher.... | 11/21/1995 |
