Celebrity Inventors
Mark Twain (Samuel L. Clemens) received Patent No. 121,992 for "An Improvement in Adjustable and Detachable Straps for Garments." He later received two more patents: one for a self-pasting scrapbook and one for a game to help players remember important historical dates.
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| Number | Title | Issue Date |
| 7327036 | Method for depositing a group III-nitride material on a silicon substrate and device therefor The present invention is related to a device comprising a substrate comprising a silicon substrate having a porous top layer, a second layer on said top layer, said second layer made of a material comprising Ge, and a further layer of a Group III-nitride material on... | 02/05/2008 |
| 7309620 | Use of sacrificial layers in the manufacture of high performance systems on tailored substrates The invention relates to methods for preparing a removable system on a mother substrate. The method deposits a high surface to volume sacrificial layer on a mother substrate and stabilizes the sacrificial layer by a) removing volatile chemical species in and on the ... | 12/18/2007 |
| 6630356 | Photoluminescent semiconductor materials Semiconductor materials having a porous texture are modified with a recognition element and produce a photoluminescent response on exposure to electromagnetic radiation. The recognition elements, which can be selected from biomolecular, organic and inorga... | 10/07/2003 |
| 6544870 | Silicon nitride film comprising amorphous silicon quantum dots embedded therein, its fabrication method and light-emitting device using the same The present invention relates to a light-emitting device utilizing amorphous silicon quantum dot nanostructures, wherein the light-emitting device can be fabricated using the existing silicon semiconductor fabrication technology, is excellent in light-emi... | 04/08/2003 |
| 6426274 | Method for making thin film semiconductor The present invention provides new and improved methods for making crystalline semiconductor thin films which may be bonded to different kinds of substrates. The thin films may be flexible. In accordance with preferred methods, a multi-layer porous struct... | 07/30/2002 |
| 6403984 | Amorphous semiconductor photocoupler A photocoupler comprising a light emitting device and a light detecting device both of which are made of amorphous semiconductors. The light emitting device is an amorphous semiconductor thin film light emitting diode which emits light when stimulated by ... | 06/11/2002 |
| 6403391 | Semiconductor light emitting device and method for manufacturing the same At least a one conductivity type nanostructure PS layer whose thickness is controlled, and the opposite conductivity type nanostructure PS layer and a one conductivity type mesostructure PS layer arranged in contact with both these sides are comprised. Si... | 06/11/2002 |
| 6398943 | Process for producing a porous layer by an electrochemical etching process A porous layer produced from silicon, germanium or aluminum by applying a wedge-shaped mask to the surface of the layer and by controlled elecrochemical etching along the mask.... | 06/04/2002 |
| 6380550 | Electroluminescent device comprising porous silicon An electroluminescent device (10) comprises a porous silicon region (22) adjacent a bulk silicon region (20), together with a top electrical contact (24) of transparent indium tin oxide and a bottom electrical contact (26) of aluminum. The device includes... | 04/30/2002 |
| 6265823 | Light emitter The light emitter is fabricated from a silicon substrate (2) that has a layer of porous silicon (3) on its upper surface. A hole transporter (4) is applied to the upper surface of the porous silicon (2) and penetrates the channels (3') formed within the p... | 07/24/2001 |
| 6225647 | Passivation of porous semiconductors for improved optoelectronic device performance and light-emitting diode based on same A method for substantially improving the photoluminescent performance of a porous semiconductor, involving the steps of providing a bulk semiconductor substrate wafer of a given conductivity, wherein the substrate wafer has a porous semiconductor layer of... | 05/01/2001 |
| 6215244 | Stacked organic light emitting device with specific electrode arrangement Provided is a method for producing an electroluminescence device, which comprises steps of making a surface of a crystal silicon substrate porous to form a porous silicon film, forming a first electroconductive film on the porous silicon film, forming an ... | 04/10/2001 |
| 6194245 | Method for making thin film semiconductor The present invention provides new and improved methods for making crystalline semiconductor thin films which may be bonded to different kinds of substrates. The thin films may be flexible. In accordance with preferred methods, a multi-layer porous struct... | 02/27/2001 |
| 6106613 | Semiconductor substrate having compound semiconductor layer, process for its production, and electronic device fabricated on semiconductor substrate In a semiconductor substrate comprising a silicon substrate having a porous region, and a semiconductor layer provided on the porous region, the semiconductor layer comprises a single-crystal compound and is formed on the surface of the porous region with... | 08/22/2000 |
| 6103540 | Laterally disposed nanostructures of silicon on an insulating substrate A single crystal silicon film nanostructure capable of optical emission is aterally disposed on an insulating transparent substrate of sapphire. By laterally disposing the nanostructure, adequate support for the structure is provided, and the option of fab... | 08/15/2000 |
| 6093941 | Photonic silicon on a transparent substrate A light emitting photonic structure has a transparent substrate, such as sapphire, supporting a layer of group IV semiconductor material, such as silicon, having at least one porous region from which light is emitted as a response to an electrical or opti... | 07/25/2000 |
| 6056868 | Rare earth doping of porous silicon The present invention discloses the doping of rare earth elements into porous silicon, resulting in enhancement of luminescence. The doping is an electro-chemical process using constant voltage bias across the two electrodes in which the anode is porous s... | 05/02/2000 |
| 6037612 | Semiconductor light emitting device having nanostructure porous silicon and mesostructure porous silicon At least a one conductivity type nanostructure PS layer whose thickness is controlled, and the opposite conductivity type nanostructure PS layer and a one conductivity type mesostructure PS layer arranged in contact with both these sides are comprised. Si... | 03/14/2000 |
| 6017811 | Method of making improved electrical contact to porous silicon A method for manufacturing a semiconductor structure having improved light mitting characteristics includes the step of exposing a semiconductor substrate, such as a silicon wafer, to an unbiased etching solution comprised of an acid, water, and an oxidizi... | 01/25/2000 |
| 6017773 | Stabilizing process for porous silicon and resulting light emitting device A method of producing light-emitting porous silicon light-emitting diode including forming a porous silicon p+ layer in a p-type silicon wafer, annealing the wafer at 800-950° C. in an atmosphere of inert gas and 1-25% oxygen, depositing a polycrystallin... | 01/25/2000 |
| 5962863 | Laterally disposed nanostructures of silicon on an insulating substrate A single crystal silicon film nanostructure capable of optical emission is laterally disposed on an insulating transparent substrate of sapphire. By laterally disposing the nanostructure, adequate support for the structure is provided, and the option of f... | 10/05/1999 |
| 5935410 | Process and device for the lighting-supported structuring of porous silicon A process for producing a structured area of porous silicon on a substrate, in which silicon is etched and structured by means of illumination, includes selectively aiming the illumination during or after the formation of the porous silicon directly at a ... | 08/10/1999 |
| 5914183 | Porous semiconductor material Porous semiconductor material in the form of at least partly crystalline silicon is produced with a porosity in excess of 90% determined gravimetrically, and voids, crazing and peeling are substantially not observable by scanning electron microscopy at a ... | 06/22/1999 |
| 5908303 | Manufacturing method of light-emitting diode A manufacturing method of a light-emitting diode is provided. The light-emitting diode manufactured by the steps of coating solution containing p-type or n-type impurities on a porous silicon layer, thereby forming a p/n junction through a thermal treatme... | 06/01/1999 |
| 5858559 | Method for altering the luminescence of a semiconductor A method is described for altering the luminescence of a light emitting semiconductor (LES) device. In particular, a method is described whereby a silicon LES device can be selectively irradiated with a radiation source effective for altering the intensit... | 01/12/1999 |
| 5834378 | Passivation of porous semiconductors for improved optoelectronic device performance and fabrication of light-emitting diode bases on same A method for substantially improving the photo luminescent performance of a porous semiconductor, involving the steps of providing a bulk semiconductor substrate wafer of a given conductivity, wherein the substrate wafer has a porous semiconductor layer o... | 11/10/1998 |
| 5831329 | Layered system with an electrically activatable layer An electronic component has electrically activatable layer, e.g. in electroluminescent layer of porous silicon on a body of which two multiarthogonal grids are buried. A conductive layer on the electrically activatable layer forms a drain and another cond... | 11/03/1998 |
| 5828118 | System which uses porous silicon for down converting electromagnetic energy to an energy level within the bandpass of an electromagnetic energy detector An electromagnetic energy detector system down converts electromagnetic egy from a relatively high energy beyond the detectable range of an electromagnetic energy detector to a lower energy level within the detectable range of the electromagnetic energy ... | 10/27/1998 |
| 5765680 | Porous silicon with embedded tritium as a stand-alone prime power source for optoelectronic applications An illumination source comprising a porous silicon having a source of electrons on the surface and/or interticies thereof having a total porosity in the range of from about 50 v/o to about 90 v/o. Also disclosed are a tritiated porous silicon and a photov... | 06/16/1998 |
| 5726464 | Light emitting device using porous semi-conductor material A light emitting device comprises a luminous region comprising a luminous porous material comprising a crystalline semiconductor, and a non-porous region adjacent to the luminous region, wherein a conductive type between the regions is different at an int... | 03/10/1998 |
| 5705047 | Method for manufacturing porous blue light emitting diode A method for manufacturing a porous blue light emitting diode comprising the steps of preparing a silicon substrate having a back surface, applying a conducting layer on the back surface, annealing the substrate coated with the conducting layer in an iner... | 01/06/1998 |
| 5695617 | Silicon nanoparticles A web-like nanoparticle silicon is produced by laser vaporization of silicon metal in an oxygen-free atmosphere in a diffusion cloud chamber where it aggregates into novel web-like microstructures. The aggregates are porous, and bright yellow to orange ph... | 12/09/1997 |
| 5696629 | Optical component comprising layers of porous silicon The invention relates to an optical component consisting of transparent thin layers of differing thickness and refractive indices. Such optical components are used, for example, as interference filters and mirrors. Optical components made of layers with g... | 12/09/1997 |
| 5690807 | Method for producing semiconductor particles The invention provides a method for producing semiconductor particles in which a semiconductor material of the type for which particles are desired is placed in an electrolytic solution of an anodic cell. The anodic cell is configured with a cathode also ... | 11/25/1997 |
| 5689603 | Optically interactive nanostructure Optically interactive nanostructural element. The element includes a semiconductor substrate including at least one radiation guide region extending into the substrate. The geometry of the substrate material surrounding the radiation guide region is selec... | 11/18/1997 |
| 5661313 | Electroluminescent device in silicon on sapphire Electroluminescent devices are formed on a transparent sapphire substrate follows. Crystalline silicon is formed on the sapphire substrate and patterned into a mesa. An electrode of, for example, titanium silicide, is formed in the silicon around the mes... | 08/26/1997 |
| 5644156 | Porous silicon photo-device capable of photoelectric conversion A semiconductor device includes a porous silicon layer with an impurity concentration of 1×1019 to 1×1021 cm-3, in which a plurality of pores are formed, and a thermal oxide film 0.01 to 10 μm thick formed on the expand... | 07/01/1997 |
| 5626921 | Method for forming photoluminescence layer on a semiconductor layer by ion irradiation For forming a photoluminescence layer on a semiconductor layer, ions are irradiated to a surface portion of a semiconductor layer where a photoluminescence layer is to be formed, and then, the semiconductor layer is immersed in a solution containing hydro... | 05/06/1997 |
| 5627382 | Method of making silicon quantum wires A method of making semiconductor quantum wires, and a light emitting device employing such wires, employs a semiconductor wafer as starting material. The wafer is weakly doped p type with a shallow heavily doped p layer therein for current flow uniformity... | 05/06/1997 |
| 5607876 | Fabrication of quantum confinement semiconductor light-emitting devices The present invention consists of an electroluminescent structure and method of fabrication of that structure in materials which have an indirect bandgap in their bulk form. The processing steps can all be standard VLSI methods. Quantum columns, quantum w... | 03/04/1997 |
