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3M employee and church chorister Art Fry needed something to temporarily mark pages in his hymnal. He was in luck because his colleague, Spencer Silver, accidentally developed a glue that was too weak for other purposes. After initially discouraging consumer response, Post-it Notes became a hit in 1979.
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| Number | Title | Issue Date |
| 7429754 | Semiconductor device, its manufacture method and electronic component unit A LED chip having first and second electrodes on opposite principal surfaces, is bonded to a substrate through a composite bonding layer. The composite bonding layer is formed when a support substrate including the substrate and a first bonding layer is bonded to a ... | 09/30/2008 |
| 7396697 | Semiconductor light-emitting device and method for manufacturing the same A method for fabricating a semiconductor light-emitting element according to the present invention includes the steps of (A) providing a striped masking layer on a first Group III-V compound semiconductor, (B) selectively growing a second Group III-V compound semico... | 07/08/2008 |
| 7335920 | LED with current confinement structure and surface roughening An LED having a p-type layer of material with an associated p-contact, an n-type layer of material with an associated n-contact and an active region between the p-type layer and the n-type layer, includes a confinement structure that is formed within one of the p-ty... | 02/26/2008 |
| 7319248 | High brightness light emitting diode The present invention discloses a high brightness light emitting diode. The light emitting diode primarily includes a permanent substrate, a reflective mirror formed on said permanent substrate, an n-type cladding layer formed on said reflective mirror, and defining... | 01/15/2008 |
| 7244629 | Vertical cavity surface emitting laser diode and method for manufacturing the same In a vertical cavity surface emitting laser diode manufactured on a non-off-angle substrate with a (100)-oriented plane or the like, anisotropic stress is applied to a central portion of an active layer by forming a asymmetrical oxidation structure in an Al high con... | 07/17/2007 |
| 7180100 | Semiconductor light-emitting device, surface-emission laser diode, and production apparatus thereof, production method, optical module and optical telecommunication system A semiconductor light-emitting device has a semiconductor layer containing Al between a substrate and an active layer containing nitrogen, wherein Al and oxygen are removed from a growth chamber before growing said active layer and a concentration of oxygen incorpor... | 02/20/2007 |
| 6693303 | Nitride semiconductor device and method for manufacturing the same A nitride semiconductor device is composed of Group III nitride semiconductors. The device includes an active layer, and a barrier layer made from a predetermined material and provided adjacent to the active layer. The barrier layer has a greater band-gap... | 02/17/2004 |
| 6689631 | Semiconductor light-emitting device with improved electro-optical characteristics and method of manufacturing the same A semiconductor light-emitting device having a resonant cavity structure for emitting light perpendicularly to the plane of an active region, and a method of manufacturing the same. A post has a window of an upper electrode and a current aperture of an ox... | 02/10/2004 |
| 6653162 | Fabrication method of optical device having current blocking layer of buried ridge structure An optical device having a current blocking layer of a buried ridge structure and a fabrication method thereof are disclosed. This invention reduces a leakage current between active layer and ion implant layer in buried ridge structure. To minimize leakag... | 11/25/2003 |
| 6635559 | Formation of insulating aluminum oxide in semiconductor substrates The present invention provides methods and apparatus for creating insulating layers in Group III-V compound semiconductor structures having aluminum oxide with a substantially stoichiometric compositions. Such insulating layers find applications in a vari... | 10/21/2003 |
| 6614055 | Surface light-emitting element and self-scanning type light-emitting device A surface light-emitting element having improved external light emission efficiency and a self-scanning light-emitting device using this surface light-emitting element are provided. To improve external light-emission efficiency, the light-emitting center ... | 09/02/2003 |
| 6608328 | Semiconductor light emitting diode on a misoriented substrate A light emitting diode is made by a compound semiconductor in which light is emitted from an active region with a multiple quantum well structure. The active region is sandwiched by InGaAlP-based lower and upper cladding layers. Emission efficiency of the... | 08/19/2003 |
| 6573114 | Optical semiconductor device A LED has a thin highly resistive or insulative layer formed below an electrode pad in order to divert current flow from the region below an electrode pad, which region does not contribute to light emission, to another region which does. Consequently, bet... | 06/03/2003 |
| 6476421 | Semiconductor light-emitting device and method for manufacturing thereof In a semiconductor light-emitting device, on an n-GaAs substrate are stacked an n-GaAs buffer layer, an n-cladding layer, an undoped active layer, a p-cladding layer, a p-intermediate band gap layer and a p-current diffusion layer. Further, a first electr... | 11/05/2002 |
| 6455343 | Method of manufacturing light emitting diode with current blocking structure The present invention provides a method of manufacturing a light emitting diode based on an epitaxial layer structure. The epitaxial layer structure includes a substrate of a first conductivity type, a lower cladding layer of the first conductivity type f... | 09/24/2002 |
| 6420732 | Light emitting diode of improved current blocking and light extraction structure Structures for light emitting diodes are disclosed, which include improved current blocking and light extraction structures. The diodes typically include a substrate formed on a first electrode, a first confining layer of a first conductivity type formed ... | 07/16/2002 |
| 6242761 | Nitride compound semiconductor light emitting device In order to remove the problems in conventional nitride compound semiconductor laser structures, namely, high operation voltage caused by a high resistance in a p-type layer and a high contact resistance of an electrode, damage to the crystal caused by dr... | 06/05/2001 |
| 6215131 | Light-emitting device using vacuum doughnut to serve as a current blocking layer A light-emitting device using a vacuum doughnut to serve as a current blocking layer is disclosed. The light-emitting device comprises: a substrate of a first conductivity type; a buffer layer formed on the substrate; a double heterostructure layer compri... | 04/10/2001 |
| 6191436 | Optical semiconductor device A LED has a thin highly resistive or insulative layer formed below an electrode pad in order to divert current flow from the region below an electrode pad, which region does not contribute to light emission, to another region which does. Consequently, bet... | 02/20/2001 |
| 5994723 | Semiconductor element and its method of manufacturing An improved semiconductor construction and method of fabrication having a luminous element for emitting light is provided composed of a layer having a pn junction formed with a first semiconductor layer of a first conductivity type and a second semiconduc... | 11/30/1999 |
| 5949093 | Semiconductor light emitting device with current blocking region A semiconductor light emitting device comprises: a plurality of II-VI compound semiconductor layers stacked on a semiconductor substrate; a contact layer formed on the II-VI compound semiconductor layers; a first first-conduction-type-side electrode and a... | 09/07/1999 |
| 5585649 | Compound semiconductor devices and methods of making compound semiconductor devices A compound semiconductor device with an improved internal current blocking structure. The semiconductor device includes an n-clad layer of II-VI compound semiconductor, a p-clad layer of II-VI compound semiconductor, an active layer of II-VI compound semi... | 12/17/1996 |
| 5187116 | Process for preparing electroluminescent device of compound semiconductor A process for preparing an electroluminescent device of a compound semiconductor comprising a step (A) of epitaxially forming over a semiconductor substrate an electroconductive layer of a compound semiconductor and an electroluminescent layer of a p-n ju... | 02/16/1993 |
| 5153889 | Semiconductor light emitting device Disclosed is a semiconductor light emitting device, comprising a semiconductor substrate, a double hetero structure portion formed on the front surface of the substrate and consisting of an InGaAlP active layer and lower and upper clad layers having the a... | 10/06/1992 |
| 5048035 | Semiconductor light emitting device A semiconductor light emitting device, especially, a light emitting diode includes a compound semiconductor substrate of a first conductivity type, an InGaAlP layer formed on the substrate and having a light emitting region, a GaAlAs layer of a second con... | 09/10/1991 |
| 4249967 | Method of manufacturing a light-emitting diode by liquid phase epitaxy A small-area light-emitting diode of the surface-emitting type has a double heterojunction semiconductor structure grown on a substrate. A semiconductor blocking layer having a hole formed therein is disposed between the substrate and the layers of the do... | 02/10/1981 |
| 4212021 | Light emitting devices In a prior-art injection type light emitting device which is constructed so that a predetermined range of a p-n junction formed by a semiconductor substrate and an epitaxial layer provided thereon may radiate, a radiation region in the p-n junction become... | 07/08/1980 |
