Class 257/E33.01 - Doped superlattice (e.g., nipi superlattice) (EPO)

Subclass of Class 257 - Active solid-state devices (e.g., transistors, solid-state diodes)
Definition: This subclass is indented under subclass E33.008. This subclass
No. of patents: 4
Last issue date: 10/30/2007

Number	Title	Issue Date
7288422	Photonic integrated device using reverse-mesa structure and method for fabricating the same A photonic integrated device using a reverse-mesa structure and a method for fabricating the same are disclosed. The photonic integrated device includes a first conductive substrate on which a semiconductor laser, an optical modulator, a semiconductor optical amplif...	10/30/2007
7282741	Vertical type nitride semiconductor light emitting diode Disclosed herein is a vertical type nitride semiconductor light emitting diode. The nitride semiconductor light emitting diode comprises an n-type nitride semiconductor layer, an active layer formed under the n-type nitride semiconductor layer, a p-type nitride semi...	10/16/2007
7202510	Semiconductor luminescent device and manufacturing method thereof A first principal plane faces a second principal plane of a p-type Ga N compound semiconductor that is in contact with an MQW luminescent layer. On the surface of the first principal plane, a first region made up of the p-type Ga N compound semiconductor including a...	04/10/2007
6890780	Method for forming an electrostatically-doped carbon nanotube device The present invention provides a method and associated structure for forming an electrostatically-doped carbon nanotube device. The method includes providing a carbon nanotube having a first end and a second end. The method also includes disposing a first metal cont...	05/10/2005

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