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| Number | Title | Issue Date |
| 7442599 | Silicon/germanium superlattice thermal sensor A silicon/germanium (SiGe) superlattice thermal sensor is provided with a corresponding fabrication method. The method forms an active CMOS device in a first Si substrate, and a SiGe superlattice structure on a second Si-on-insulator (SOI) substrate. The first subst... | 10/28/2008 |
| 7417248 | Transistor with shallow germanium implantation region in channel A method of manufacturing a transistor and a structure thereof, wherein a very shallow region having a high dopant concentration of germanium is implanted into a channel region of a transistor at a low energy level, forming an amorphous germanium implantation region... | 08/26/2008 |
| 7304328 | Use of hydrogen implantation to improve material properties of silicon-germanium-on-insulator material made by thermal diffusion A method of forming a relaxed SiGe-on-insulator substrate having enhanced relaxation, significantly lower defect density and improved surface quality is provided. The method includes forming a SiGe alloy layer on a surface of a first single crystal Si layer. The fir... | 12/04/2007 |
| 7233018 | High voltage MOSFET having Si/SiGe heterojuction structure and method of manufacturing the same Provided are high voltage metal oxide semiconductor field effect transistor (HVMOSFET) having a Si/SiGe heterojunction structure and method of manufacturing the same. In this method, a substrate on which a Si layer, a relaxed SiGe epitaxial layer, a SiGe epitaxial l... | 06/19/2007 |
| 7227174 | Semiconductor device including a superlattice and adjacent semiconductor layer with doped regions defining a semiconductor junction A semiconductor device may include a superlattice comprising a plurality of stacked groups of layers. Each group of layers of the superlattice may include a plurality of stacked base silicon monolayers defining a base silicon portion and an energy band-modifying lay... | 06/05/2007 |
| 7161168 | Superlattice nanopatterning of wires and complex patterns Fabrication of metallic or non-metallic wires with nanometer widths and nanometer separation distances without the use of lithography. Wires are created in a two-step process involving forming the wires at the desired dimensions and transferring them to a planar sub... | 01/09/2007 |
| 6596555 | Forming of quantum dots A method of forming, on a single-crystal semiconductor substrate of a first material, quantum dots of a second material, including growing by vapor phase epitaxy the second material on the first material in optimal conditions adapted to ensuring a growth ... | 07/22/2003 |
| 6403975 | Semiconductor components, in particular photodetectors, light emitting diodes, optical modulators and waveguides with multilayer structures grown on silicon substrates A semiconductor component, selected from the group comprising a photodetector, a light emitting diode, an optical modulator and a waveguide. The semiconductor component comprises an Si substrate, an active region formed on said substrate, and an Si cappin... | 06/11/2002 |
| 6008506 | SOI optical semiconductor device There is provided an optical semiconductor device, including a first semiconductor layer, a first insulating layer formed on the first semiconductor layer, the first insulating layer having a different index of refraction from that of the first semiconduc... | 12/28/1999 |
| 5994154 | Method of fabricating an optical semiconductor device There is provided an optical semiconductor device, including a first semiconductor layer, a first insulating layer formed on the first semiconductor layer, the first insulating layer having a different index of refraction from that of the first semiconduc... | 11/30/1999 |
| 5917195 | Phonon resonator and method for its production A structure of periodically varying density is provided, that acts as a phonon resonator for phonons capable of participating in phonon-electron interactions. Specifically, a phonon resonator that is resonant for phonons of appropriate momentum to partici... | 06/29/1999 |
| 5793060 | SOI Optical semiconductor device There is provided an optical semiconductor device, including a first semiconductor layer, a first insulating layer formed on the first semiconductor layer, the first insulating layer having a different index of refraction from that of the first semiconduc... | 08/11/1998 |
| 5757024 | Buried porous silicon-germanium layers in monocrystalline silicon lattices Monocrystalline semiconductor lattices with a buried porous semiconductor layer having different chemical composition. Also monocrystalline semiconductor superlattices with a buried porous semiconductor layers having different chemical composition than th... | 05/26/1998 |
| 5685946 | Method of producing buried porous silicon-geramanium layers in monocrystalline silicon lattices Lattices of alternating layers of monocrystalline silicon and porous silicon-germanium have been produced. These single crystal lattices have been fabricated by epitaxial growth of Si and Si--Ge layers followed by patterning into mesa structures. The mesa... | 11/11/1997 |
| 5630905 | Method of fabricating quantum bridges by selective etching of superlattice structures A quantum bridge structure including wires of a semiconductor material such as silicon which are formed by selectively etching a superlattice of alternating layers of at least two semiconductor materials. The quantum bridge is useful as a photo emission d... | 05/20/1997 |
| 5539214 | Quantum bridges fabricated by selective etching of superlattice structures A quantum bridge structure including wires of a semiconductor material such as silicon which are formed by selectively etching a superlattice of alternating layers of at least two semiconductor materials. The quantum bridge is useful as a photo emission d... | 07/23/1996 |
