Bizarre Patents
Decorative Jeweled Wheel Cover
An improved wheel is provided wherein decorative items such as gem stones are embedded in either the wheel surface, a special mounting section attached to the wheel surface, or to a spoke strap that wraps around each spoke and positions embedded gem stones on the outside surface of the spoke.
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| Number | Title | Issue Date |
| 7442953 | Wavelength selective photonics device A device comprising a number of different wavelength-selective active-layers arranged in a vertical stack, having band-alignment and work-function engineered lateral contacts to said active-layers, consisting of a contact-insulator and a conductor-insulator. Photons... | 10/28/2008 |
| 7429756 | Nitride semiconductor light emitting device A nitride semiconductor light emitting device is provided. The nitride semiconductor light emitting device includes: an n-type nitride semiconductor layer; an Incontaining super lattice structure layer formed above the n-type nitride semiconductor layer; a first ele... | 09/30/2008 |
| 7425732 | Nitride semiconductor device A nitride semiconductor device includes an active layer including a first nitride semiconductor layer and a second nitride semiconductor layer which are periodically stacked, the second nitride semiconductor layer having a different composition from a composition of... | 09/16/2008 |
| 7262429 | Thz detection employing modulation doped quantum well device structures An improved THz detection mechanism includes a heterojunction thyristor structure logically formed by an n-type quantum-well-base bipolar transistor and p-type quantum-wellbase bipolar transistor arranged vertically to share a common collector region. Antenna elemen... | 08/28/2007 |
| 7217947 | Semiconductor light source and method of making A solid state light emitting device having a plurality of semiconductor finger members with side walls perpendicular to a substrate. Multiple quantum wells are formed on the side walls, and are also perpendicular to the substrate. Each multiple quantum well is sandw... | 05/15/2007 |
| 7183584 | Quantum well structure and semiconductor device using it and production method of semiconductor element A semiconductor element excellent in luminous efficiency which sufficiently eliminates the effect of a piezo-electric field with the crystallinity of an active layer well retained. A quantum well active layer has a laminated structure in which a barrier layer undope... | 02/27/2007 |
| 6696313 | Method for aligning quantum dots and semiconductor device fabricated by using the same A method for aligning quantum dots effectively controls a growth position of the quantum dots for obviating an irregularity of a position of spontaneous formation quantum dots, and thus aligns the quantum dots in one-dimension (1-D) or two-dimension (2-D)... | 02/24/2004 |
| 6696372 | Method of fabricating a semiconductor structure having quantum wires and a semiconductor device including such structure A method for the production of a semiconductor structure having self-organized quantum wires is described. The process includes the formation of multi-atomic steps on a (001) oriented semiconductor substrate inclined at an angle toward the [110] direction... | 02/24/2004 |
| 6677619 | Nitride semiconductor device A nitride semiconductor device including a light emitting device comprises a n-type region of one or more nitride semiconductor layers having n-type conductivity, a p-type region of one or more nitride semiconductor layers having p-type conductivity and a... | 01/13/2004 |
| 6670647 | Semiconductor light emitting element, display device and optical information reproduction device using the same, and fabrication method of semiconductor light emitting element A semiconductor light emitting element includes: a first conductive type layer made of a nitride semiconductor which is deposited on a substrate; a quantum well active layer made of AlP GaQ In1-P-Q N (OࣘP, OࣘQ, P+Q | 12/30/2003 |
| 6657233 | Light emitting devices with layered III-V semiconductor structures, and modules and systems for computer, network and optical communication, using such device A semiconductor light emitting device is disclosed, including a semiconductor substrate, an active region comprising a strained quantum well layer, and a cladding layer for confining carriers and light emissions, wherein the amount of lattice strains in t... | 12/02/2003 |
| 6657234 | Nitride semiconductor device An nitride semiconductor device for the improvement of lower operational voltage or increased emitting output, comprises an active layer comprising quantum well layer or layers and barrier layer or layers between n-type nitride. semiconductor layers and p... | 12/02/2003 |
| 6649942 | Nitride-based semiconductor light-emitting device A nitride-based semiconductor light-emitting device capable of attaining homogeneous emission with a low driving voltage is obtained. This nitride-based semiconductor light-emitting device comprises a first conductivity type first nitride-based semiconduc... | 11/18/2003 |
| 6649943 | Group III nitride compound semiconductor light-emitting element Disclosed is a Group III nitride compound semiconductor light-emitting element formed of Group III nitride compound semiconductor layers, including a multi-layer containing light-emitting layers; a p-type semiconductor layer; and an n-type semiconductor l... | 11/18/2003 |
| 6645785 | Light-emitting semiconductor device using group III nitride compound An emission layer (5) for a light source device is formed to have a multi-layer structure, doped with an acceptor and a donor impurity. The multi-layer structure may include a quantum well (QW) structure or a multi quantum well (MQW) structure (50). With ... | 11/11/2003 |
| 6645885 | Forming indium nitride (InN) and indium gallium nitride (InGaN) quantum dots grown by metal-organic-vapor-phase-epitaxy (MOCVD) Indium Nitride (InN) and Indium-rich Indium Gallium Nitride (InGaN) quantum dots embedded in single and multiple Inx Ga1-x N/Iny Ga1-y N quantum wells (QWs) are formed by using TMIn and/or Triethylindium (TEIn),... | 11/11/2003 |
| 6632694 | Double heterojunction light emitting diodes and laser diodes having quantum dot silicon light emitters A direct-wafer-bonded, double heterojunction, light emitting semiconductor device includes an ordered array of quantum dots made of one or more indirect band gap materials selected from a group consisting of Si, Ge, SiGe, SiGeC, 3C--SiC, and hexagonal SiC... | 10/14/2003 |
| 6620643 | Light-emitting device using group III nitride compound semiconductor A group III nitride compound semiconductor light-emitting device provides a multiple quantum well (MQW) active layer formed on an intermediate layer. The MQW active layer may include, for example, five semiconductor layers having a thickness of approximat... | 09/16/2003 |
| 6617061 | Group III nitride compound semiconductor device and group III nitride compound semiconductor light-emitting device A clad layer is provided as a multilayer structure made of an alternate laminate of 20 layers of Al0.2 Ga0.8 N 50 nm thick and 20 layers of Ga0.99 In0.01 N 20 nm thick. The clad layer about 1.4 μm thick has a l... | 09/09/2003 |
| 6614060 | Light emitting diodes with asymmetric resonance tunnelling An LED based on a two well system with charge asymmetric resonance tunnelling comprises first and second coupled wells, one being a wide well and the other an active quantum well. The wells are coupled via a resonance tunnelling barrier which is transpare... | 09/02/2003 |
| 6611007 | Method for locally modifying the effective bandgap energy in indium gallium arsenide phosphide (InGaAsP) quantum well structures A novel quantum well intermixing method for regionally modifying the bandgap properties of InGaAsP quantum well structures is disclosed. The method induces bandgap wavelength blue shifting and deep states for reducing carrier lifetime within InGaAsP quant... | 08/26/2003 |
| 6580099 | Nitride semiconductor light-emitting devices A nitride semiconductor light-emitting device has an active layer of a single-quantum well structure or multi-quantum well made of a nitride semiconductor containing indium and gallium. A first p-type clad layer made of a p-type nitride semiconductor cont... | 06/17/2003 |
| 6562646 | Method for manufacturing light-emitting device using a group III nitride compound semiconductor A method for manufacturing a light-emitting device which using group III nitride group semiconductors and a quantum well structure, comprising forming a well layer (e.g. an InGaN layer), forming a cap layer on the well layer, the cap layer having almost t... | 05/13/2003 |
| 6563850 | Light-emitting device and fabricating method thereof A light-emitting device includes a first guide layer; a second guide layer; and an active layer interposed between the first guide layer and the second guide layer. The active layer has a multiple quantum well structure including a plurality of quantum we... | 05/13/2003 |
| 6544870 | Silicon nitride film comprising amorphous silicon quantum dots embedded therein, its fabrication method and light-emitting device using the same The present invention relates to a light-emitting device utilizing amorphous silicon quantum dot nanostructures, wherein the light-emitting device can be fabricated using the existing silicon semiconductor fabrication technology, is excellent in light-emi... | 04/08/2003 |
| 6546031 | Extended wavelength strained layer lasers having strain compensated layers Several methods are used in novel ways with newly identified and viable parameters to decrease the peak transition energies of the pseudomorphic InGaAs/GaAs heterostructures. These techniques, taken separately or in combination, suffice to permit operatio... | 04/08/2003 |
| 6541798 | Group III nitride compound semiconductor device and group III nitride compound semiconductor light-emitting device A clad layer is provided as a multilayer structure made of an alternate laminate of 20 layers of Al0.2 Ga0.8 N 50 nm thick and 20 layers of Ga0.99 In0.01 N 20 nm thick. The clad layer about 1.4 μm thick has a l... | 04/01/2003 |
| 6541293 | Semiconductor light-emitting device and manufacturing method thereof In a method of manufacturing a semiconductor light-emitting device involving the steps of: forming a first semiconductor layer; forming a light-emitting layer of superlattice structure by laminating a barrier layer being made of InY1 Ga1-Y... | 04/01/2003 |
| 6525337 | Light and/or electron element An optical and/or electronic device is operated by degeneracy of density of states caused by confinement of electrons in a fractal region having a self-similarity. An AlGaAs/GaAs light emitting device is configured by distributing GaAs quantum dots in a f... | 02/25/2003 |
| 6515306 | Light emitting diode A light emitting diode with strained layer superlatices (SLS) crystal structure is formed on a substrate. A nucleation layer and a buffer layer are sequentially formed on the substrate, so as to ease the crystal growth for the subsequent crystal growing p... | 02/04/2003 |
| 6507042 | Semiconductor device and method of manufacturing the same The present invention relates to a semiconductor device with quantum dots and a method of manufacturing the same, and a structure of the semiconductor device which can control an emission wavelength of the quantum dots and a method of manufacturing the sa... | 01/14/2003 |
| 6504171 | Chirped multi-well active region LED A light emitting device and a method of increasing the light output of the device utilize a chirped multi-well active region to increase the probability of radiative recombination of electrons and holes within the light emitting active layers of the activ... | 01/07/2003 |
| 6501101 | Light emitting diode A light emitting diode comprising a multiple quantum well (MQW) layer as an active layer and a reflecting layer below the active layer, wherein the number and/or total thickness of well layers in the MQW layer is determined such that the MQW layer shows a... | 12/31/2002 |
| 6495859 | Opto-electronic component made from II-VI semiconductor material A component has an active layer, barrier layers and, if appropriate, a buffer layer and at least one of these layers contains a beryllium-containing chalcogenide. The active layer is a multiple layer, for example a superlattice made of BeTe/ZnSe or of BeT... | 12/17/2002 |
| 6476412 | Light emitting semiconductor device with partial reflection quantum-wave interference layers A semiconductor device is constituted by a quantum-wave interference layer with plural periods of a pair of a first layer W and a second layer B. The second layer B has wider band gap than the first layer W. Each thickness of the first layer W and the sec... | 11/05/2002 |
| 6472683 | Semiconductor quantum oscillation device A semiconductor quantum oscillation device, which realizes Bloch oscillation on the basis of a novel carrier injection scheme, comprises a multilayer semiconductor structure and a means for applying a voltage to said structure. The multilayer structure co... | 10/29/2002 |
| 6469314 | Thin multi-well active layer LED with controlled oxygen doping An LED and a method of fabricating the LED which utilize controlled oxygen (O) doping to form at least one layer of the LED having an O dopant concentration which is correlated to the dominant emission wavelength of the LED. The O dopant concentration is ... | 10/22/2002 |
| 6455870 | Unipolar light emitting devices based on III-nitride semiconductor superlattices The fabrication of unipolar light emitting devices (ULEDs) based on III-nitride semiconductors is disclosed using an effective "p-n junction" between two n-type III-nitride semiconductor superlattices. Such a device works like a usual light emitting diode... | 09/24/2002 |
| 6447938 | Gallium nitride collector grid solar cell A transparent conductive coating (TCC) formed from gallium nitride GaN on a sapphire substrate. In order to account for the lattice mismatch between the GaN and the sapphire substrate, a nucleation layer is formed on the sapphire substrate. A mask, for ex... | 09/10/2002 |
| 6445009 | Stacking of GaN or GaInN quantum dots on a silicon substrate, their preparation procedure electroluminescent device and lighting device comprising these stackings A device includes a silicon substrate provided with a coating including at least one stacking constituted by a plane of GaN or GaInN quantum dots emitting visible light at room temperature in a respective layer of AIN or GaN. The method of making the devi... | 09/03/2002 |
