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| Number | Title | Issue Date |
| 7029936 | Semiconductor laser, device having reduced contact resistance and manufacturing method thereof A semiconductor laser element capable of reducing the contact resistance and the thermal resistance and realizing a high reliability is provided. The semiconductor laser element includes: a semiconductor substrate, an active layer formed on the semiconductor substra... | 04/18/2006 |
| 6697403 | Light-emitting device and light-emitting apparatus using the same A light-emitting device and a light-emitting apparatus using the same. The light-emitting device includes an n-type or p-type substrate, a doped region formed on a first surface of the substrate with a predetermined dopant to be an opposite type from that... | 02/24/2004 |
| 6683416 | Device transfer method, and device array method and image display unit production method using the same A method of transferring multiple devices arrayed on a first substrate to a second substrate is provided. The devices on the first substrate are covered with a release agent, and a portion of the release agent, positioned on a device to be transferred is ... | 01/27/2004 |
| 6677610 | Light-emitting device and display apparatus using the same A light-emitting device and a display apparatus using the light-emitting device. The light-emitting device includes a p-type or n-type substrate, at least one doped region formed on at least one surface of the substrate while being doped with a predetermi... | 01/13/2004 |
| 6613610 | Image display unit and method of producing image display unit An image display unit and a method of producing the image display unit, wherein the image display unit includes an array of a plurality of light emitting devices for displaying an image, and wherein the method of producing the image display unit employs, ... | 09/02/2003 |
| 6596556 | Light emitting diode and a method for manufacturing the same An LED is provided with a p-type semiconductor region in the shape of an island being buried in an n-type semiconductor region from the surface of it, and forms a pn junction at the interface between these n-type region and p-type region. The pn junction ... | 07/22/2003 |
| 6490402 | Flexible flat color display A flexible electronic color display includes a light-emitting diode (LED) matrix formed from an interweaved weft of conductive strands and warp of light-emitting diode (LED) fiber of a conductive core coated with a p-doped semiconductor and then an n-dope... | 12/03/2002 |
| 6420734 | Light emitting diode and a method manufacturing the same An LED is provided with a p-type semiconductor region in the shape of an island being buried in an n-type semiconductor region from the surface of it, and forms a pn junction at the interface between these n-type region and p-type region. The pn junction ... | 07/16/2002 |
| 6376864 | Semiconductor light-emitting device and method for manufacturing the same Semiconductor light-emitting devices and methods for their manufacture using an efficient reflector to minimize optical loss due to the substrate absorption. The reflector comprises a plurality of discrete quarter-wave stacks deposited on a patterned subs... | 04/23/2002 |
| 6320209 | Epitaxial lateral overgrowth of gallium nitride based semiconductive oxide selective growth mask and method for fabricating the same A semiconductor light emitting device includes: a substrate; a contact layer made of a gallium nitride based compound semiconductor formed on the substrate; a stripe-shaped conductive selective growth mask formed above the contact layer; and a layered str... | 11/20/2001 |
| 6204545 | Semiconductor device The present invention is a semiconductor device which has one or a plurality of spherical semiconductor elements as its main component. The spherical semiconductor element is a spherical semiconductor crystal with a photovoltaic part and a pair of electro... | 03/20/2001 |
| 6078062 | II-VI compound semiconductor based light emitting device having recombination regions spatially arrayed in a planar direction of the active layer to prevent crack propagation Provided by the present invention is a II-VI compound semiconductor based light emitting device which is suppressed in the propagation velocity of crystal defects at the time of current application, has a prolonged lifetime and can be readily mass produce... | 06/20/2000 |
| 6046465 | Buried reflectors for light emitters in epitaxial material and method for producing same A buried reflector 50 in an epitaxial lateral growth layer forms a part of a light emitting device and allows for the fabrication of a semiconductor material that is substantially low in dislocation density. The laterally grown material is low in dislocat... | 04/04/2000 |
| 6008066 | Method of manufacturing a light emitting diode to vary band gap energy of active layer A light-emitting diode 10 showing stable temperature characteristics achieved by reliably preventing stimulated emission regardless of temperature changes, comprising: a pair of clad layers 12, 14 and a pair of block layers 16, 17 formed on said substrate... | 12/28/1999 |
| 5869848 | End face light-emitting-type LED, end face light-emitting-type LED array and methods of manufacturing them An end face light-emitting-type LED has a first-conductive-type semiconductor substrate and a second-conductive-type diffusion region formed on a first surface of the first-conductive-type semiconductor substrate so as to have a depth within a predetermin... | 02/09/1999 |
| 5828085 | Light emitting diode having light-emitting and light-absorbing regions An active layer of a light-emitting diode is surrounded jointly by a pair of clad layers and a pair of block layers. The active layer includes a light-emitting portion and a light-absorbing portion which are continuously formed in one body. The light-emit... | 10/27/1998 |
| 5732099 | Semiconductor light emitting device A p-type GaAs current block layer is stacked on a (100)-oriented n-type GaAs substrate, and a stripe-shaped groove is formed in the p-type GaAs current block layer to extend in the direction. Side surfaces of the groove has the maximum inclination ... | 03/24/1998 |
| 5728605 | Method for producing an optical semiconductor device having a carrier injection path or an electric-field applying path An optical semiconductor device includes a plurality of electrodes formed on a common side of a substrate. On the substrate, a first type conductivity layer, a first main layer such as an active layer, which has any one of an undoped type, a first type co... | 03/17/1998 |
| 5600157 | Light-emitting and light-sensing diode array device, and light-emitting and light-sensing diode with improved sensitivity According to a first aspect of the invention, a light-emitting and light-sensing diode has a doped region with a depth not exceeding 2 μm, for adequate sensitivity, and an impurity concentration of at least 5×1020 atoms/cm-3, for a... | 02/04/1997 |
| 5583351 | Color display/detector A color semiconductor display device in which optoelectronic elements capable of emitting/absorbing light of different predetermined wavelengths in the visible wavelength range (e.g. red, green, blue) are formed on a common substrate and comprise similar ... | 12/10/1996 |
| 5471494 | Method for selecting a self pulsating semiconductor laser A method for selecting a semiconductor laser is provided which contributes to improved productivity of a highly reliable semiconductor laser of prolonged lifetime, and which includes the steps of: (a) measuring highest peak intensity, Ia, and next highest... | 11/28/1995 |
| 5404031 | Semiconductor light emitting device with current confining layer A semiconductor light emitting device which allows part of an active layer to generate light by supplying current to the part of the active layer is disclosed. The semiconductor light emitting device includes: a semiconductor substrate having upper and lo... | 04/04/1995 |
| 5345092 | Light emitting diode including active layer having first and second active regions A light emitting diode comprises a semiconductor substrate of compound semiconductor, an active layer provided above the semiconductor substrate and including first and second active regions, the first active region being spaced apart from the second acti... | 09/06/1994 |
| 5332910 | Semiconductor optical device with nanowhiskers A semiconductor light-emitting device includes a plurality of semiconductor rods, each of which has a pn junction. The semiconductor rods are formed on a semiconductor substrate such that the plurality of semiconductor rods are arranged at a distance subs... | 07/26/1994 |
| 5264715 | Emitting with structures located at positions which prevent certain disadvantageous modes and enhance generation of light in advantageous modes A light emitting device is provided with mirrors placed on opposite sides of the source of light and spaced apart by a distance that is determined as a function of the wavelength of the light emitted by the light source. One particular embodiment of the p... | 11/23/1993 |
| 5242857 | Method of manufacturing semiconductor structures In a semiconductor buried heterostructure laser having a mesa (2, 3, 4) and confinement layers (5, 6, 7) on a substrate (12), at least the lowermost of the confinement layers (5, 6, 7) is substantially planar up to the mesa. This is achieved by MOVPE grow... | 09/07/1993 |
| 5215929 | Method of manufacturing pn-junction device II-VI compound semiconductor This invention relates to a pn-junction device, especially a blue light-emitting diode and a method of the manufacturing thereof. The pn-junction is formed between a superlattice region and a n-type semiconductor region, the superlattice region consisting... | 06/01/1993 |
| 5115284 | Light-emitting device A light-emitting device having a first clad layer on a substrate, and a first active layer for light emission by current injection, a second clad layer constituting a first heterogeneous structure with the first active layer and first clad layer, a second... | 05/19/1992 |
| 5107311 | Semiconductor light-emitting device A semiconductor light emitting device comprises a substrate, an n-type semiconductor layer formed on the substrate, a p-type semiconductor layer formed on a portion of a surface of the n-type semiconductor layer, an electrode for applying a reverse biasin... | 04/21/1992 |
| 5105234 | Electroluminescent diode having a low capacitance A semiconductor device has a pn junction for producing electromagnetic radation in an active region and a monocrystalline semiconductor body having a first region of a first conductivity type and a second region of the second opposite conductivity type, w... | 04/14/1992 |
| 5100836 | Method of making a semiconductor device Disclosed is a method of making a semiconductor device that exemplarily comprises depositing a Ti/Pt layer onto a AuBe intermediate layer on a p-doped region of a semiconductor body. It also comprises depositing a Ti/Pt layer onto a n-doped region of the ... | 03/31/1992 |
| 5036023 | Rapid thermal processing method of making a semiconductor device The inventive method of producing a device having non-alloyed ohmic contacts of common composition to both an n-doped and a p-doped region of a semiconductor body comprises deposition of a Ti/Pt layer on the p-doped as well as the n-doped region, followed... | 07/30/1991 |
| 4999315 | Method of controlling dopant incorporation in high resistivity In-based compound Group III-V epitaxial layers High resistivity In-based compound Group III-V epitaxial layers are used to prevent substantial current flow through a region of a semiconductor device, such as a CSBH, DCPBH, EMBH or CMBH laser, a LED, a photodiode, a HBT, or a FET. Also disclosed is a h... | 03/12/1991 |
| 4999682 | Electronic and optoelectronic laser devices utilizing light hole properties Improved p-channel FETs and optoelectronic device make use of reduced hole effective mass achieved with quantum confinement. The devices include multiple one-dimensional p-channel FETs which have electrically induced and controllable one dimensional p-typ... | 03/12/1991 |
| 4975752 | Light-emitting diode An LED includes a semiconductor substrate, a first blocking layer formed on this semiconductor substrate, a second blocking layer formed on this first blocking layer, a first V-channel extending from the second blocking layer to the semiconductor substrat... | 12/04/1990 |
| 4937836 | Semiconductor laser device and production method therefor A semiconductor laser device, includes (1) a first semiconductor layer having a mesa-shaped stripe, (2) a current blocking layer applied on the first semiconductor layer except the top of the mesa-shaped stripe of the first semiconductor layer, the curren... | 06/26/1990 |
| 4899201 | Electronic and optoelectric devices utilizing light hole properties Improved p-channel FETs and optoelectronic devices make use of reduced hole effective mass achieved with quantum confinement. The devices include multiple one-dimensional p-channel FETs which have electrically induced and controllable one dimensional p-ty... | 02/06/1990 |
| 4897846 | Surface emission type semiconductor light-emitting device A surface emission type semiconductor light-emitting device includes a base having a main surface, a current blocking layer formed on the base, and a semiconductor layer formed on the current blocking layer. A circular recess or hole having a side wall wh... | 01/30/1990 |
| 4888624 | Semiconductor devices employing high resistivity in-based compound group III-IV epitaxial layer for current confinement High resistivity In-based compound Group III-V epitaxial layers are used to prevent substantial current flow through a region of a semiconductor device, such as a CSBH, DCPBH, EMBH or CMBH laser, a LED, a photodiode, a HBT, or a FET. Also described is a h... | 12/19/1989 |
| 4835578 | Semiconductor device having a quantum wire and a method of producing the same A semiconductor device comprises a first superlattice layer consisting of a first semiconductor layer that contains impurities and a second semiconductor layer that contains impurities at a low concentration, said first superlattice layer being formed on ... | 05/30/1989 |
