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| Number | Title | Issue Date |
| 7442965 | Photonic crystal light emitting device A photonic crystal structure is formed in an n-type region of a III-nitride semiconductor structure including an active region sandwiched between an n-type region and a p-type region. A reflector is formed on a surface of the p-type region opposite the active region... | 10/28/2008 |
| 7435999 | Semiconductor chip for optoelectronics and method for the production thereof A semiconductor chip for optoelectronics having a thin-film layer, in which a zone that emits electromagnetic radiation is formed and which has an emission side, a rear side and side faces that connect the rear side to the emission side. A carrier for the thin-film ... | 10/14/2008 |
| 7411220 | Semiconductor light emitting device and manufacturing method thereof A semiconductor light emitting device can have stable electric characteristics and can emit light with high intensity from a substrate surface. The device can include a transparent substrate and a semiconductor layer on the substrate. The semiconductor layer can inc... | 08/12/2008 |
| 7397133 | Submount for diode with single bottom electrode A submount is used to mount a diode between two metal areas on the upper surface of a substrate. One of the areas is connected to a metal plate at the lower surface of the substrate through a via. The submount is clamped between two metal sheets. The top metal sheet... | 07/08/2008 |
| 7372078 | Vertical gallium-nitride based light emitting diode A vertical GaN-based LED includes: an n-electrode; a light-emitting structure in which an n-type GaN layer, an active layer, and a p-type GaN layer are sequentially formed under the n-electrode; a p-electrode formed under the light-emitting structure; a passivation ... | 05/13/2008 |
| 7368763 | Semiconductor device and manufacturing method thereof A high quality silicon carbide (SiC) layer being substantially lower in threading dislocation density than a prior layer is formed on silicon (Si) substrate. A semiconductor device is fabricated in such a way that a semiconductor buffer layer containing Si in part a... | 05/06/2008 |
| 7355210 | High-efficiency light-emitting element A high-efficiency light-emitting element includes a substrate, a first nitride semiconductor layer formed on the substrate, a nitride light-emitting layer formed on the first nitride semiconductor layer, and a second nitride semiconductor layer formed on the nitride... | 04/08/2008 |
| 7354846 | Submount substrate for mounting light emitting device and method of fabricating the same A submount substrate for mounting a light emitting device and a method of fabricating the same, wherein since a submount substrate for mouthing a light emitting device in which a Zener diode device is integrated can be fabricated by means of a silicon bulk micromach... | 04/08/2008 |
| 7344904 | Method of fabricating laser diode Provided is a method of fabricating a laser diode. Embodiments of the method include sequentially forming at least a lower clad layer, a resonance layer, an upper clad layer, an upper contact layer, an upper electrode layer, and a sacrificial layer on a substrate; f... | 03/18/2008 |
| 7309879 | Semiconductor laser, manufacturing the same and semiconductor laser device A semiconductor laser element capable of reducing the contact resistance and the thermal resistance and realizing a high reliability is provided. The semiconductor laser element includes: a semiconductor substrate, an active layer formed on the semiconductor substra... | 12/18/2007 |
| 7306960 | High radiance LED chip and a method for producing same The invention concerns a light-emitting diode chip comprising a radiation-emitting active region and a window layer. To increase the luminous efficiency, the cross-sectional area of the radiation-emitting active region is smaller than the cross-sectional area of the... | 12/11/2007 |
| 7297985 | Display device and display unit using the same A display device is formed by burying at least part of a light emitting device in an insulating material, wherein a drive electrode for the light emitting device is formed so as to be extracted on a surface of the insulating material. A display unit is produced by t... | 11/20/2007 |
| 7291863 | Light emitting diode structure A LED structure including an epitaxy substrate, a semiconductor layer, a first bonding pad and a second bonding pad, is provided. The epitaxy substrate has a through hole and the semiconductor layer is disposed on the epitaxy substrate. The semiconductor layer inclu... | 11/06/2007 |
| 7285799 | Semiconductor light emitting devices including in-plane light emitting layers A semiconductor light emitting device includes a planar light emitting layer with a wurtzite crystal structure having a axis roughly parallel to the plane of the layer, referred to as an in-plane light emitting layer. The in-plane light emitting layer may inc... | 10/23/2007 |
| 7268371 | Light extraction from a semiconductor light emitting device via chip shaping A method for designing semiconductor light emitting devices is disclosed wherein the side surfaces (surfaces not parallel to the epitaxial layers) are formed at preferred angles relative to vertical (normal to the plane of the light-emitting active layer) to improve... | 09/11/2007 |
| 6661033 | LED with a coupling-out structure On an upper side there is a structured output coupling layer with flanks which are aligned at an angle between 60° and 88° with respect to a layer plane and which form boundaries for output coupling areas provided for the emergence of radiation and offs... | 12/09/2003 |
| 6660550 | Surface emission type semiconductor light-emitting device and method of manufacturing the same A method of manufacturing a semiconductor light-emitting device includes: a step of forming a stacked semiconductor layer having a plurality of columnar portions over a semiconductor substrate, a step of forming an embedding insulation layer of a resin ma... | 12/09/2003 |
| 6657377 | Cylindrical electrical component having two electrodes on bottom face In a polarized electrical component, a first electrode is provided at an inner-side bottom face of the component, and a second electrode is provided at an outer-side bottom face of the component. One of the first and second electrodes serves as an anode e... | 12/02/2003 |
| 6639354 | Light emitting device, production method thereof, and light emitting apparatus and display unit using the same An n-type cladding layer formed of a non-single crystal body of n-type AlGaN, a light emitting layer containing a plurality of micro-crystals made from ZnO, and a p-type cladding layer formed of a non-single crystal body of p-type BN are sequentially stac... | 10/28/2003 |
| 6635901 | Semiconductor device including an InGaAIN layer A semiconductor device includes a silicon substrate and a compound semiconductor layer formed on a main plane of the silicon substrate. The compound semiconductor layer is represented by the general formula of Inx Gay Alz ... | 10/21/2003 |
| 6623171 | Socket and a system for optoelectronic interconnection and a method of fabricating such socket and system It is an object of the present invention to disclose a socket that is easy in use for optoelectrical interconnection. The socket of the invention can be handled as a compact device that allows the interconnection between electrical signals and external ap... | 09/23/2003 |
| 6623998 | Method for manufacturing group III nitride compound semiconductor device A method of manufacturing a group III nitride compound semiconductor device, includes providing a substrate, forming a group III nitride compound semiconductor layer having a device function, and forming an undercoat layer between the substrate and the gr... | 09/23/2003 |
| 6620238 | Nitride semiconductor structure, method for producing a nitride semiconductor structure, and light emitting device A nitride semiconductor structure includes: a substrate having a growth surface, a convex portion and a concave portion being formed on the growth surface; and a nitride semiconductor film grown on the growth surface. A cavity is formed between the nitrid... | 09/16/2003 |
| 6614058 | Light emitting semiconductor device with a surface-mounted and flip-chip package structure A light emitting semiconductor device with a surface-mounted and flip-chip package structure is disclosed. The light emitting semiconductor device includes an insulating substrate and an LED. The LED includes a substrate, a first-type semiconductor layer,... | 09/02/2003 |
| 6613461 | Gallium nitride-based compound semiconductor chip and method for producing the same, and gallium nitride-based compound semiconductor wafer A gallium nitride-based compound semiconductor chip comprises a gallium nitride substrate having a (0001) facet of a wurtzite type crystal structure as a principal facet and a gallium nitride-based compound semiconductor crystal formed on the gallium nitr... | 09/02/2003 |
| 6614056 | Scalable led with improved current spreading structures An LED with improved current spreading structures that provide enhanced current injection into the LED's active layer, improving its power and luminous flux. The current spreading structures can be used in LEDs larger than conventional LEDs while maintain... | 09/02/2003 |
| 6570190 | LED having angled sides for increased side light extraction The invention is a method for designing semiconductor light emitting devices such that the side surfaces (surfaces not parallel to the epitaxial layers) are formed at preferred angles relative to vertical (normal to the plane of the light-emitting active ... | 05/27/2003 |
| 6552369 | Light emitting diode and fabricating method thereof A light emitting diode (LED) is disclosed. An emitted light can be prevented from being absorbed by a substrate using a Bragg reflector layer with high reflectivity. The present invention provides a Bragg reflector layer comprising a plurality of high alu... | 04/22/2003 |
| 6534838 | Semiconductor device and method of fabricating the same A release layer composed of AlGaAs, a strain layer, a strain compensation layer composed of an InGaAs, and a component layer are formed on a GaAs substrate. The component layer includes a DBR film. A recess for defining a bent region is formed in the comp... | 03/18/2003 |
| 6531719 | Group III nitride compound semiconductor device A group III nitride compound semiconductor device has a substrate, a group III nitride compound semiconductor layer having a device function, and an undercoat layer formed between the substrate and the group III nitride semiconductor layer. The undercoat ... | 03/11/2003 |
| 6518598 | III-nitride LED having a spiral electrode A structure of III-nitride light emitting diode (LED) having spiral electrodes and a manufacturing method thereof. The present invention uses an etching or polishing method to form a spiral-shaped trench in the surface of the epitaxial structure of LED, s... | 02/11/2003 |
| 6518599 | Light-emitting device using group III nitride group compound semiconductor A light emitting device using a group III nitride group compound semiconductor is disclosed. The device includes a substrate, a group III nitride group compound semiconductor layer, and a rectangular parallelepiped stack Rd which is formed by etching mult... | 02/11/2003 |
| 6518601 | Light-emitting diode A light-emitting diode (1) comprises a window layer (4) above an active layer (3), the window layer having edge webs (6) profiled in a sawtooth-shaped manner. Edge lines (11) with which the current is injected into the active layer (3) proceed above the e... | 02/11/2003 |
| 6452216 | Nitride semiconductor light emitting device and apparatus including the same A nitride semiconductor light emitting device includes a worked substrate including grooves and lands formed on a main surface of a nitride semiconductor substrate, a nitride semiconductor underlayer covering the grooves and the lands of the worked substr... | 09/17/2002 |
| 6445010 | Optoelectronic component emitting incoherent radiation The radiation emitting optoelectronic component has a radiation generating body with a planar optical waveguide and a wave guiding layer. The wave guiding layer has a radiation generating zone in which electromagnetic radiation is generated while the comp... | 09/03/2002 |
| 6429462 | Injection incoherent emitter An injection incoherent emitter outputs a directed beam of light resulting from spontaneous emission. The emitter provides small divergence angles and enhanced external efficiency, as well as increased energy and light power. Specific ranges of compositio... | 08/06/2002 |
| 6404125 | Method and apparatus for performing wavelength-conversion using phosphors with light emitting diodes An apparatus comprises an active region, a phosphor layer and a substrate. The active region is configured to emit light having a first band of wavelengths selected from a first group of wavelengths. The phosphor layer has a first refractive index. The ph... | 06/11/2002 |
| 6399408 | Process for producing light emitting device The present invention provides a process for effectively producing a high performance light emitting device. A substrate on which an N-type semiconductor layer, a light emitting layer, and a P-type semiconductor layer are formed is provided. The N-type se... | 06/04/2002 |
| 6376864 | Semiconductor light-emitting device and method for manufacturing the same Semiconductor light-emitting devices and methods for their manufacture using an efficient reflector to minimize optical loss due to the substrate absorption. The reflector comprises a plurality of discrete quarter-wave stacks deposited on a patterned subs... | 04/23/2002 |
| 6366018 | Apparatus for performing wavelength-conversion using phosphors with light emitting diodes An apparatus, comprises an active region, a phosphor layer and a reflective layer. The active region is configured to emit light having a first band of wavelengths from a first group of wavelengths. The phosphor layer is disposed between and in contact wi... | 04/02/2002 |
