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| Number | Title | Issue Date |
| 7442965 | Photonic crystal light emitting device A photonic crystal structure is formed in an n-type region of a III-nitride semiconductor structure including an active region sandwiched between an n-type region and a p-type region. A reflector is formed on a surface of the p-type region opposite the active region... | 10/28/2008 |
| 7394112 | Heterostructure with rear-face donor doping The present invention relates to a field effect transistor having heterostructure with a buffer layer or substrate. A channel is arranged on the buffer layer or on the substrate, and a capping layer is arranged on the channel. The channel consists of a piezopolar ma... | 07/01/2008 |
| 7387833 | Luminescent materials consisting of nanocrystals with core/shell structure and method for preparing same Luminescent material consisting of nanocrystals comprising a core surrounded by a shell, said core consisting of a nanocrystal of semiconductor of formula AB in which A represents a metal or a metalloid in oxidation state (II) and B represents a chemical element in ... | 06/17/2008 |
| 7372082 | Submount substrate for mounting light emitting device and method of fabricating the same A submount substrate for mounting a light emitting device and a method of fabricating the same, wherein since a submount substrate for mouthing a light emitting device in which a Zener diode device is integrated can be fabricated by means of a silicon bulk micromach... | 05/13/2008 |
| 7358126 | Dual damascene structure and methods of forming the same A dual damascene structure and a method of forming a dual damascene structure are disclosed. The dual damascene structure includes an insulation member, a single crystal member and a filling member. The insulation member has an opening having a dual damascene shape.... | 04/15/2008 |
| 7355210 | High-efficiency light-emitting element A high-efficiency light-emitting element includes a substrate, a first nitride semiconductor layer formed on the substrate, a nitride light-emitting layer formed on the first nitride semiconductor layer, and a second nitride semiconductor layer formed on the nitride... | 04/08/2008 |
| 7329907 | Phosphor-converted LED devices having improved light distribution uniformity A New Phosphor-converted LED Device (“NPCLD”) is disclosed. The NPCLD may include a lens over a phosphor body, in which the lens and the phosphor body each have a substantially convex upper surface. The NPCLD may alternatively include first and second lenses, th... | 02/12/2008 |
| 7315048 | Method and apparatus for mixing light emitted by a plurality of solid-state light emitters In one embodiment, light emitted by a plurality of solid-state light emitters is mixed by mounting the plurality of solid-state light emitters on a transparent to translucent substrate so that they primarily emit light away from the substrate. The light emitters are... | 01/01/2008 |
| 7294562 | Semiconductor substrate, method of manufacturing the same, semiconductor device, and method of manufacturing the same A semiconductor substrate is disclosed which comprises a first single crystal silicon layer, an insulator formed to partially cover one main surface of the first single crystal silicon layer, a second single crystal silicon layer formed to cover a region of the firs... | 11/13/2007 |
| 7233041 | Large-area nanoenabled macroelectronic substrates and uses therefor A method and apparatus for an electronic substrate having a plurality of semiconductor devices is described. A thin film of nanowires is formed on a substrate. The thin film of nanowires is formed to have a sufficient density of nanowires to achieve an operational c... | 06/19/2007 |
| 7233028 | Gallium nitride material devices and methods of forming the same The invention provides gallium nitride material devices, structures and methods of forming the same. The devices include a gallium nitride material formed over a substrate, such as silicon. Exemplary devices include light emitting devices (e.g., LED's, lasers), ligh... | 06/19/2007 |
| 6861155 | Highly luminescent color selective nanocrystalline materials A coated nanocrystal capable of light emission includes a substantially monodisperse nanoparticle selected from the group consisting of CdX, where x=S, Se, Te and an overcoating of ZnY, where Y=S, Se, uniformly deposited thereon, said coated nanoparticle characteriz... | 03/01/2005 |
| 6693302 | Semiconductor light-emitting element In a semiconductor light-emitting element, an underlayer is made of a high crystallinity Al-including semiconducting nitride material of which the FWHM is 90 seconds or below in full width at half maximum of an X-ray rocking curve. A light-emitting layer ... | 02/17/2004 |
| 6693303 | Nitride semiconductor device and method for manufacturing the same A nitride semiconductor device is composed of Group III nitride semiconductors. The device includes an active layer, and a barrier layer made from a predetermined material and provided adjacent to the active layer. The barrier layer has a greater band-gap... | 02/17/2004 |
| 6664570 | P-type contact electrode device and light-emitting device A p-type contact electrode device in a ZnSe-based II-VI compound semiconductor, which electrode device uses, as a contact layer, a BeTe layer having a high p-type doping and a low lattice mismatching with a GaAs substrate to prevent oxidation in air. The ... | 12/16/2003 |
| 6653163 | Device for emitting electromagnetic radiation at a predetermined wavelength and a method of producing such device A device for emitting radiation at a predetermined wavelength is disclosed. The device has a cavity comprising a first bulk region and a second bulk region of opposite conductivity type wherein a barrier is provided for spatially separating the charge car... | 11/25/2003 |
| 6649942 | Nitride-based semiconductor light-emitting device A nitride-based semiconductor light-emitting device capable of attaining homogeneous emission with a low driving voltage is obtained. This nitride-based semiconductor light-emitting device comprises a first conductivity type first nitride-based semiconduc... | 11/18/2003 |
| 6635494 | Method of forming a two-dimensionally arrayed quantum device using a metalloprotein complex as a quantum-dot mask array A quantum device is constituted from a two-dimensional array of quantum dots formed from metal atom aggregates contained in a metalloprotein complex. The metalloprotein is arranged on the surface of a substrate having an insulation layer with a pitch of t... | 10/21/2003 |
| 6635905 | Gallium nitride based compound semiconductor light-emitting device A light-emitting semiconductor device includes an active layer interposed between first-side and second-side cladding layer, and at least one of first-side and second-side optical guide layers. The following four equations are satisfied: where "h" is a to... | 10/21/2003 |
| 6635904 | Indium gallium nitride smoothing structures for III-nitride devices A smoothing structure containing indium is formed between the substrate and the active region of a III-nitride light emitting device to improve the surface characteristics of the device layers. In some embodiments, the smoothing structure is a single laye... | 10/21/2003 |
| 6631150 | Semiconductor device A semiconductor device has a blocking layer disposed between the substrate and the active layer. The blocking layer inhibits the propagation of anti-phase domain defects (APDs) into the active layer. This decreases the density of defects in the active lay... | 10/07/2003 |
| 6621106 | Light emitting diode A light emitting diode (LED) of a double hetero-junction type has a light-emitting layer of a GaAlInP material, a p-type cladding layer and an n-type cladding layer sandwiching the light-emitting layer therebetween, a p-side electrode formed on the p-type... | 09/16/2003 |
| 6617618 | Light emitting semiconductor device with GaInNAs active layer and GaAs spacer layers A light emitting semiconductor device, comprising: a lower cladding layer of Alz Ga1-z As (0 | 09/09/2003 |
| 6617606 | Light-emitting semiconductor element A light-emitting diode having an excellent high-speed response characteristic and capable of giving a large light output with a small variation of the light output during the operation is provided. In the light-emitting diode, an active layer comprising a... | 09/09/2003 |
| 6617583 | Inventory control A novel encoding system and methods for determining the location and/or identity of a particular item or component of interest is provided. In particular, the present invention utilizes a "barcode" comprising one or more sizes of semiconductor nanocrystal... | 09/09/2003 |
| 6607932 | High modulation frequency light emitting device exhibiting spatial relocation of minority carriers to a non-radiative recombination region A light emitting device providing a first part that includes a source of excess minority carriers including excess electron-hole pairs; a second part, coupled to the first part, that includes a minority carrier barrier; and a third part, coupled to the se... | 08/19/2003 |
| 6607829 | Tellurium-containing nanocrystalline materials Tellurium-containing nanocrystallites are produced by injection of a precursor into a hot coordinating solvent, followed by controlled growth and annealing. Nanocrystallites may include CdTe, ZnTe, MgTe, HgTe, or alloys thereof. The nanocrystallites can p... | 08/19/2003 |
| 6602671 | Semiconductor nanocrystals for inventory control A novel encoding system, compositions for use therein and methods for determining the source, location and/or identity of a particular item or component of interest is provided. In particular, the present invention utilizes a collection of one or more siz... | 08/05/2003 |
| 6589807 | Semiconductor device and method for manufacturing the same The semiconductor device according to the present invention comprises a V-groove having V-shaped cross-section formed on a semiconductor substrate or on an epitaxial growth layer grown on a semiconductor substrate, and an active layer is provided only at ... | 07/08/2003 |
| 6544808 | Light-emitting device with quantum dots and holes, and its fabricating method A method is provided for forming quantum holes of nanometer levels. In an ion beam scanner, ions are projected from an ion gun onto a semiconductor substrate. During the projection, ions are focused into an ion beam whose focal point is controlled to dete... | 04/08/2003 |
| 6541797 | Group-III nitride semiconductor light-emitting device A group-III nitride semiconductor light-emitting device includes an n-type light-emitting layer formed of an indium-containing group-III nitride semiconductor and disposed between a group-III nitride semiconductor n-type layer and a group-III nitride semi... | 04/01/2003 |
| 6537839 | Nitride semiconductor light emitting device and manufacturing method thereof A nitride semiconductor light emitting device having preferable light emitting characteristics even if dense threading dislocations extend through single crystal layers. The nitride semiconductor light emitting device includes an active layer obtained by ... | 03/25/2003 |
| 6534798 | Surface plasmon enhanced light emitting diode and method of operation for the same The emission properties of light-emitting diodes are enhanced by coupling to surface plasmons. The semiconductor emitter layer of the light-emitting diode is thinner than λ/2 and is sandwiched between two metal films. A periodic pattern is defined in the... | 03/18/2003 |
| 6522063 | Light emitting diode A light emitting diode. The light emitting diode has a substrate that has two surfaces. On one surface, a distributed Bragg reflector, an n-type confining layer, an active layer, a p-type confining layer, a current spreading layer, a meshed Ohmic contact ... | 02/18/2003 |
| 6515308 | Nitride-based VCSEL or light emitting diode with p-n tunnel junction current injection A p-n tunnel junction between a p-type semiconductor layer and a n-type semiconductor layer provides current injection for an nitride based vertical cavity surface emitting laser or light emitting diode structure. The p-n tunnel junction reduces the numbe... | 02/04/2003 |
| 6509580 | Semiconductor device with current confinement structure The present invention relates to a semiconductor device with one or more current confinement regions and to a method of manufacturing such a device, particularly buried heterostructure light emitting devices such as semiconductor lasers and light emitting... | 01/21/2003 |
| 6504183 | Epitaxial growth of nitride semiconductor device The present invention provides a semiconductor device with reducing dislocation density. The semiconductor device includes multiple nucleuses between a substrate and an AlGaInN compound semiconductor. The dislocation density that is induced by crystal lat... | 01/07/2003 |
| 6501091 | Quantum dot white and colored light emitting diodes An electronic device comprising a population of quantum dots embedded in a host matrix and a primary light source which causes the dots to emit secondary light of a selected color, and a method of making such a device. The size distribution of the quantum... | 12/31/2002 |
| 6492660 | Semiconductor light emitting device A semiconductor light emitting device includes a cladding layer having a first conductive type, an active layer, and a semiconductor layer including at least a cladding layer and having a second conductive type reversed to the first conductive type, which... | 12/10/2002 |
| 6489629 | Aggregate of semiconductor micro-needles and method of manufacturing the same, and semiconductor apparatus and method of manufacturing the same On a silicon substrate is formed a silicon dioxide film and then hemispherical grains made of silicon, each having an extremely small diameter, are deposited thereon by LPCVD. After annealing the hemispherical grains, the silicon dioxide film is etched us... | 12/03/2002 |
