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| Number | Title | Issue Date |
| 7439547 | Micro electro mechanical system apparatus A MEMS (micro electro mechanical system) apparatus is equipped with a light-emitting circuit, having a light-emitting device, to emit light; a light-receiving circuit having a series circuit of series-connected light-receiving devices that receive the emitted light ... | 10/21/2008 |
| 7427804 | Optoelectronic semiconductor device and light signal input/output device A optoelectronic semiconductor device, mountable on and electrically connectable to an electro-optical wiring board, a substrate thereof having a light input/output through-hole and electric connection through-holes, the light input/output through-hole being not for... | 09/23/2008 |
| RE40485 | Semiconductor light-emitting element In a semiconductor light-emitting element, an underlayer is made of AlN layer, and a first cladding layer is made of an n-AlGaN layer. A light-emitting layer is composed of a base layer made of i-GaN and plural island-shaped single crystal portions made of i-AlGaInN... | 09/09/2008 |
| 7422918 | Method of making a support for light emitting diodes which are interconnected in a three-dimensional environment The present invention relates to a method of making supports for light emitting diodes, wherein rigid substrates are used as supports for light emitting diodes, it being proposed, in particular, to render the substrates more fragile in order to make certain zones of... | 09/09/2008 |
| 7419311 | Surface mount optical coupler, method of mounting the same, and method of producing the same A surface mount optical coupler includes a silicon substrate; an optical semiconductor device disposed on an upper surface of the silicon substrate; and a short bare fiber formed of vitreous silica. A V-shaped linear groove is formed in the upper surface of the sili... | 09/02/2008 |
| 7410818 | Thin film transistor, liquid crystal display using thin film transistor, and method of manufacturing thin film transistor A semiconductor film, which is located over a gate electrode for forming a channel region between a source electrode and a drain electrode, has a width greater than a width of the source electrode and a width of the drain electrode located over the gate electrode. I... | 08/12/2008 |
| 7408182 | Surface passivation of GaN devices in epitaxial growth chamber The present invention relates to passivation of a gallium nitride (GaN) structure before the GaN structure is removed from an epitaxial growth chamber. The GaN structure includes one or more structural epitaxial layers deposited on a substrate, and the passivation l... | 08/05/2008 |
| 7397068 | Solid state lighting device A light assembly for use with a low voltage power source. The light assembly semiconductor photo-emitters are electrically in series with a higher forward voltage drop than the associated low voltage power supply. To provide the necessary voltage the light assembly ... | 07/08/2008 |
| 7387904 | Light emitting element and manufacturing method thereof, and light emitting device using the light emitting element A light-emitting element has a layer including an organic material between a first electrode and a second electrode, and further has a layer including a metal oxide between the second electrode and the layer including the organic material, where these electrodes and... | 06/17/2008 |
| 7381994 | Light-emitting device using a three-dimension percolated layer, and manufacturing process thereof A process for manufacturing an electroluminescent device comprising the steps of: making an organic or inorganic templating frame, comprising monodispersed nanoelements, in particular nanospheres; providing said na... | 06/03/2008 |
| 7378695 | Solid-state image pickup device and manufacturing method thereof A solid-state image pickup device is provided in which a pixel forming region 4 and a peripheral circuit forming region 20 are formed on the same semiconductor substrate, a first element isolation portion is formed by an element isolation layer 21 | 05/27/2008 |
| 7374958 | Light emitting semiconductor bonding structure and method of manufacturing the same A light emitting semiconductor bonding structure includes a structure formed by bonding a substrate onto a light emitting semiconductor. The substrate is a structure containing electric circuits. The ohmic contact N electrode layer and P electrode layer are formed o... | 05/20/2008 |
| 7375378 | Surface passivated photovoltaic devices A photovoltaic device comprising a photovoltaic cell is provided. The photovoltaic cell includes an emitter layer comprising a crystalline semiconductor material and a lightly doped crystalline substrate disposed adjacent the emitter layer. The lightly doped crystal... | 05/20/2008 |
| 7358536 | Active matrix substrate An active matrix substrate includes a substrate, pixel units, driving lines, and an electrostatic discharge protection circuit. The substrate has an active region and a peripheral region. The pixel units are arranged to form a matrix inside the active region. The dr... | 04/15/2008 |
| 7345324 | Light emitting diodes with graded composition active regions A light emitting device in accordance with an embodiment of the present invention includes a first semiconductor layer of a first conductivity type having a first surface, and an active region formed overlying the first semiconductor layer. The active region include... | 03/18/2008 |
| 7345318 | Light-emitting diode An LED comprising a circuit board, a connecting electrode unit provided on the circuit board, a reflective cup provided within the circuit board, an LED element disposed in the reflective cup and connected to the connecting electrode unit, and a resin with which the... | 03/18/2008 |
| 7342254 | Light-emitting device having a diffractive film on its light-output face and manufacturing method therefor Affords efficiently and at low cost practical, tiny light-emitting devices having an optically diffractive film on their light-output face. A light-emitting device (LD) includes a diffractive film (DF) formed on its light-output face; the diffractive film includes a... | 03/11/2008 |
| 7335914 | Display, array substrate, and display manufacturing method Each pixel of a display includes a first thin film transistor whose source is connected to a first power supply terminal, a second thin film transistor which is different in conduction type from the first thin film transistor and whose source and drain are connected... | 02/26/2008 |
| 7335520 | Method and apparatus for fabricating flat panel display A fabricating method of a flat panel display includes the steps of spreading an etch-resist on a thin film formed on a substrate, a polarity of the etch-resist changed by irradiation with a first light; providing a soft mold having a projected surface and a groove a... | 02/26/2008 |
| 7323724 | Nitride semiconductor device A nitride semiconductor device includes a semiconductor layer, a first electrode for establishing an ohmic contact disposed on the semiconductor layer, and a second electrode on the first electrode, having a different shape from that of the first electrode. A joint ... | 01/29/2008 |
| 7314769 | Organometallic complex and light-emitting element containing the same Organometallic complexes represented by chemical formula 1 are synthesized. In chemical formula 1, R1 to R5, are individually a hydrogen atom, a halogen atom, a lower alkyl group, an alkoxy group, an acyl group, a nitro group, a cyano group, an... | 01/01/2008 |
| 7315045 | Sapphire/gallium nitride laminate having reduced bending deformation The present invention relates to a sapphire/gallium nitride laminate, wherein a curvature radius thereof is positioned on the right side of a first curve plotted from the following functional formula (I): Y=Y0+A·e−(x−1)/T... | 01/01/2008 |
| 7312473 | Display device and electronic device using the same In display devices using thin film transistors, a graphoepitaxy is used for a semiconductor layer crystallizing process. Thus, a display device in which crystallinity is improved, a variation in characteristics of thin film transistors is reduced, display nonuniform... | 12/25/2007 |
| 7301172 | Sequentially charged nanocrystal light emitting device A light emitting device including a transistor structure formed on a semiconductor substrate. The transistor structure having a source region, a drain region, a channel region between the source and drain regions, and a gate oxide on the channel region. The light em... | 11/27/2007 |
| 7300808 | Optically pumped, surface-emitting semiconductor laser device and method for the manufacture thereof The invention is directed to an optically pumped surface-emitting semiconductor laser device having at least one radiation-generating quantum well structure and at least one pump radiation source for optically pumping the quantum well structure, whereby the pump rad... | 11/27/2007 |
| 7294520 | Method for fabricating a plurality of semiconductor bodies, and electronic semiconductor body A method for fabricating a plurality of semiconductor bodies, in particular based on nitride compound semiconductor material. The method includes forming a mask layer (3) over a substrate (1) or over an initial layer (2), which mask layer has a ... | 11/13/2007 |
| 7291866 | Semiconductor light emitting device and semiconductor light emitting unit A semiconductor light emitting device comprises: embedding resin; a first lead having a first inner lead section embedded in the embedding resin and a first outer lead section protruding from one side face of the embedding resin; a second lead having a second inner ... | 11/06/2007 |
| 7282745 | Nitride based semiconductor light-emitting device The present invention provides a semiconductor device having a semiconductor multi-layer structure which includes at least an active layer having at least a quantum well, and the active layer further including at least a luminescent layer of InxAly | 10/16/2007 |
| 7271021 | Light-emitting device with a current blocking structure and method for making the same A light emitting device includes a substrate, an epitaxial structure positioned on the substrate, an ohmic contact electrode positioned on the epitaxial structure and a current blocking structure positioned in the epitaxial structure. The epitaxial structure include... | 09/18/2007 |
| 7265374 | Light emitting semiconductor device A novel NPBL and ANPL light emitting semiconductor device and a method for fabricating the same are provided. In the present invention, plural nano-particles are applied in the active layer of the light emitting semiconductor device, so that the leakage current ther... | 09/04/2007 |
| 7250320 | Semiconductor light emitting element, manufacturing method thereof, integrated semiconductor light emitting device, manufacturing method thereof, image display device, manufacturing method thereof, illuminating device and manufacturing method thereof A semiconductor light emitting element, manufacturing method thereof, integrated semiconductor light emitting device, manufacturing method thereof, illuminating device, and manufacturing method thereof are provided. An n-type GaN layer is grown on a sapphire ... | 07/31/2007 |
| 7250632 | Electronic devices having a layer overlying an edge of a different layer and a process for forming the same An electronic device includes a radiation-emitting component, a radiation-responsive component, or a combination thereof. In one embodiment, the electronic device includes a substrate and a first structure overlying the substrate. The electronic device also includes... | 07/31/2007 |
| 7247882 | Display device There is provided a semiconductor device having TFTs whose thresholds can be controlled. There is provided a semiconductor device including a plurality of TFTs having a back gate electrode, a first gate insulation film, a semiconductor active layer a second g... | 07/24/2007 |
| 7224000 | Light emitting diode component A light emitting package (8, 8′, 8″, 208, 408) includes a printed circuit board (10, 10′, 10″, 210, 410) supporting at least one light emitting die (12, 12″, 14, 16, 212, 412). A light transmissive cover (60, 60′, 60″, 260, 460 | 05/29/2007 |
| 7211828 | Light emitting device and electronic apparatus A light emitting device which is capable of suppressing deterioration by diffusion of impurities such as moisture, oxygen, alkaline metal and alkaline earth metal, and concretely, a flexible light emitting device which has light emitting element formed on a plastic ... | 05/01/2007 |
| 7208755 | Light-emitting device and method of fabricating the same A light emitting device 1 has formed therein a light emitting layer section 24 based on a double heterostructure in which a p-type cladding layer 34, an active layer 33 and an n-type cladding layer 32, individually composed of a Mg... | 04/24/2007 |
| 7208768 | Electroluminescent device A method is provided for forming an electroluminescent device. The method comprises: providing a type IV semiconductor material substrate; forming a p+/n+ junction in the substrate, typically a plurality of interleaved p+/n+ junctions are formed; and, forming an ele... | 04/24/2007 |
| 7187009 | Light emitting diode device for illumination objects A plurality of LEDs are mounted on a substrate aggregation, a transparent layer is formed on the substrate aggregation. The transparent layer between adjacent divisions is removed to form an individual transparent layer and to form a groove around the individual tra... | 03/06/2007 |
| 7166865 | Semiconductor light emitting device and method for manufacturing same There is provided and manufactured, at a low cost and with high yields, a semiconductor light emitting device which allows extraction of light produced in an emitter layer not only from its top surface but also from its side surfaces and which has high luminance. An... | 01/23/2007 |
| 7151284 | Structures for light emitting devices with integrated multilayer mirrors A substrate for supporting epitaxial growth of light emitting semiconductor devices having a non-crystalline multilayer reflection controlling stack under a thin layer of single crystal silicon is shown. A III-Nitride or other semiconductor stimulated emission devic... | 12/19/2006 |
