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| Number | Title | Issue Date |
| 6693024 | Semiconductor component with a semiconductor body having a multiplicity of pores and method for fabricating The semiconductor component is fabricated on the basis of a semiconductor body with a first and a second surface. A multiplicity of pores are formed in the semiconductor body. The pores extend into the semiconductor body proceeding from the first surface ... | 02/17/2004 |
| 6693337 | Semiconductor photodetection device A semiconductor photodetection device includes a semiconductor structure including an optical absorption layer having a photo-incidence surface on a first side thereof, a dielectric reflecting layer formed on a second side of the semiconductor structure o... | 02/17/2004 |
| 6680216 | Method of making imager structure In an imager having an array of light-sensitive elements and employing striped common electrodes, exposed edges of preimidized polyimide layers above the light-sensitive imaging elements are sealed with the material of the common electrode (e.g., indium t... | 01/20/2004 |
| 6649949 | Photodiode with electrode for noise immunity A photodiode includes a high-concentration first conductivity-type substrate, a low-concentration first conductivity-type epitaxial layer formed on one face of the substrate, a second conductivity-type diffusion layer formed in the epitaxial layer, the di... | 11/18/2003 |
| 6625367 | Optoelectronic device having a P-contact and an N-contact located over a same side of a substrate and a method of manufacture therefor The present invention provides an optoelectronic device that includes an optical active layer formed over a substrate and an active region formed in the optical active layer. The optoelectronic device further includes a P-contact and an N-contact formed o... | 09/23/2003 |
| 6593593 | Transparent electrode comprising ZnO and a film with a melting point lower than that of ZnO This invention provides a patterning method for a transparent electrode capable of preventing heat damages and insulation failure or the like even when a ZnO film is used. An ITO film 3 is formed on a transparent substrate 1 by sputtering and the ZnO film... | 07/15/2003 |
| 6501104 | High speed semiconductor photodetector A first semiconductor mesa structure having a photoactive region and a second semiconductor mesa structure are formed side by side on a semi-insulating substrate and surrounded with a photoresist layer. The mesa structures and the surrounding photoresist ... | 12/31/2002 |
| 6472804 | Electrode for use in electro-optical devices An electrode for an electro-optical device is provided. Light is passing through this electrode which comprises a pattern of conductive elements. The elements have dimensions small compared to the wavelength of light, so that the electrode appear transpar... | 10/29/2002 |
| 6465861 | Corrosion resistant imager A radiation imager is disclosed that is resistant to degradation due to moisture by either contact pad corrosion, guard ring corrosion or by photodiode leakage. A contact pad of a large area imager is disclosed that is formed into three distinct and elect... | 10/15/2002 |
| 6465824 | Imager structure In an imager having an array of light-sensitive elements and employing striped common electrodes, exposed edges of preimidized polyimide layers above the light-sensitive imaging elements are sealed with the material of the common electrode (e.g., indium t... | 10/15/2002 |
| 6437425 | Semiconductor devices which utilize low K dielectrics The invention is a semiconductor device and method of fabricating the device. The device includes a semiconductor substrate with an active region, and a low dielectric constant insulating layer formed over the substrate. An additional insulating layer is ... | 08/20/2002 |
| 6396118 | Conductive mesh bias connection for an array of elevated active pixel sensors An array of active pixel sensors includes a substrate. An interconnect structure is formed adjacent to the substrate. The interconnect structure includes a plurality of conductive vias. A plurality of photo sensors are formed adjacent to the interconnect ... | 05/28/2002 |
| 6359291 | Corrosion resistant imager A radiation imager is disclosed that is resistant to degradation due to moisture by either contact pad corrosion, guard ring corrosion or by photodiode leakage. A contact pad of a large area imager is disclosed that is formed into three distinct and elect... | 03/19/2002 |
| 6303968 | Semiconductor light-receiving element An ohmic electrode for electrically connecting a shielding metal film and a window layer is provided to a semiconductor light-receiving element in which stray light is controlled by the shielding metal film. In this semiconductor light-receiving element, ... | 10/16/2001 |
| 6239422 | Variable electrode traveling wave metal-semiconductor-metal waveguide photodetector A metal-semiconductor-metal photodetector (18) is provided including an optical waveguide (22) disposed on a substrate (28) and an array of metal-semiconductor-metal photodiodes (20) coupled to the optical waveguide (22). An absorber (30) is disposed betw... | 05/29/2001 |
| 6225212 | Corrosion resistant imager A radiation imager is disclosed that is resistant to degradation due to moisture by either contact pad corrosion, guard ring corrosion or by photodiode leakage. A contact pad of a large area imager is disclosed that is formed into three distinct and elect... | 05/01/2001 |
| 6184054 | Optical electronic IC capable of photo detection and its process An optical-electronic integrated circuit combining photo detection with an integrated circuit is provided where a light signal input thereto can be directly translated into an electronic signal. The electronic signal can be received and processed by the s... | 02/06/2001 |
| 6180937 | Photoresponsive device for detection of long and short wavelength photons A photoresponsive device wherein a plurality of slots is formed in a continuous polycrystalline silicon film that forms a top electrode of the photoresponsive device structure. The resulting "picket fence-like" fingers are capable of generating a depletio... | 01/30/2001 |
| 6175141 | Opto-electronic sensor component The invention relates to an opto-electronic sensor component comprising the following: a first semiconducting layer of predetermined conductivity type and a second layer of different semiconductor or metal conductivity type; a transition region between th... | 01/16/2001 |
| 6157072 | Image sensor The invention relates to an image sensor for use in the facsimile device, image reader, digital scanner and the like. In this image sensor, the photodiodes and blocking diodes formed on an insulating board are insulated by a transparent interlayer insulat... | 12/05/2000 |
| 6153921 | Diode device Disclosed is a diode device in which two electrodes of regions forming both terminals are provided on the same face, thereby enabling the device to be connected to a circuit substrate by face-down bonding. Since a region is located within the semiconducto... | 11/28/2000 |
| 6137127 | Low leakage active pixel using spacer protective mask compatible with CMOS process A pixel cell structure having a nonsilicided photodiode overcomes problems associated with the absorption of incident light by silicided surfaces. Furthermore, a photodiode access transistor having a partially silicided gate is interposed between the phot... | 10/24/2000 |
| 6136627 | High-resolution light-sensing and light-emitting diode array and fabrication method thereof A light-sensing/emitting diode array chip has impurity diffusion regions with a depth of at least 0.5 μm but not more than 2 μm in a semiconductor substrate. Each impurity diffusion region is preferably divided into a first region, used for emitting or ... | 10/24/2000 |
| 6037609 | Corrosion resistant imager A radiation imager is disclosed that is resistant to degradation due to moisture by either contact pad corrosion, guard ring corrosion or by photodiode leakage. A contact pad of a large area imager is disclosed that is formed into three distinct and elect... | 03/14/2000 |
| 6031274 | Back irradiation type light-receiving device and method of making the same A back irradiation type light-receiving device, on which light is incident from the back side with respect to a charge-reading section of a semiconductor thin plate, is provided with a reinforcement member on the charge-reading section side. Electric sign... | 02/29/2000 |
| 5990490 | Optical electronic IC capable of photo detection An optical-electronic integrated circuit combining photo detection with an integrated circuit is provided where a light signal input thereto can be directly translated into an electronic signal. The electronic signal can be received and processed by the s... | 11/23/1999 |
| 5942788 | Solid state image sensing device A solid state image sensing device having a semiconductor substrate, a first diffusion region of a positive or negative conductive type provided on the semiconductor substrate, a plurality of second diffusion regions each of which is an opposite conductiv... | 08/24/1999 |
| 5838054 | Contact pads for radiation imagers Contact pads for providing external electrical connection to components on a radiation imager having a photosensor array include a body of the material utilized for fabrication of the photosensors with an indium tin oxide (ITO) top layer disposed over the... | 11/17/1998 |
| 5825047 | Optical semiconductor device An optical semiconductor device comprises a stripe-mesa structure provided on a semi-insulating substrate. The stripe-mesa structure comprises an undoped light absorption layer sandwiched by cladding layers, and by burying layers on both sides. With this ... | 10/20/1998 |
| 5696002 | Method for forming electrical contact to the optical coating of an infrared detector from the backside of the detector This is a system and method of forming an electrical contact to the optical coating of an infrared detector. The method may comprise: forming thermal isolation trenches 22 in a substrate 20; depositing a trench filler 24 in the thermal isolation trenches ... | 12/09/1997 |
| 5646066 | Method for forming electrical contact to the optical coating of an infrared detector from the backside of the detector This is a system and method of forming an electrical contact to the optical coating of an infrared detector. The method may comprise: forming thermal isolation trenches 22 in a substrate 20; depositing a trench filler 24 in the thermal isolation trenches ... | 07/08/1997 |
| 5623158 | Infrared sensing device This is a system and method of forming an electrical contact to the optical coating of an infrared detector. The method may comprise: forming thermal isolation trenches 22 in a substrate 20; depositing a trench filler 24 in the thermal isolation trenches ... | 04/22/1997 |
| 5608254 | Method for forming electrical contact to the optical coating of an infrared detector using conductive epoxy This is a system and method of forming an electrical contact to the optical coating of an infrared detector using conductive epoxy. The method may comprise: forming thermal isolation trenches 22 and bias contact vias 23 in a substrate 20; depositing a tre... | 03/04/1997 |
| 5580795 | Fabrication method for integrated structure such as photoconductive impedance-matched infrared detector with heterojunction blocking contacts A photoconductive isotype heterojunction impedance-matched infrared detector has blocking contacts which are positioned on the bottom side of the detector. The blocking contacts prevent transfer of minority carriers from the active region of the detector,... | 12/03/1996 |
| 5567249 | Photoelectric conversion device A plurality of first electrodes are sequentially arranged on a substrate and covered with a non-single-crystal semiconductor laminate member. On the semiconductor laminate member are formed second electrodes respectively corresponding to the first electro... | 10/22/1996 |
| 5552326 | Method for forming electrical contact to the optical coating of an infrared detector using conductive epoxy This is a system and method of forming an electrical contact to the optical coating of an infrared detector using conductive epoxy. The method may comprise: forming thermal isolation trenches 22 and bias contact vias 23 in a substrate 20; depositing a tre... | 09/03/1996 |
| 5500051 | Photoelectric conversion device A plurality of first electrodes are sequentially arranged on a substrate and covered with a non-single-crystal semiconductor laminate member. On the semiconductor laminate member are formed second electrodes respectively corresponding to the first electro... | 03/19/1996 |
| 5489798 | Opto-electronic integrated circuit In an opto-electronic integrated circuit of the present invention, in a first surface region of a semiconductor substrate, a pin-type photodiode is constituted on the basis of a photodiode layer formed on a first transistor layer. In a second surface regi... | 02/06/1996 |
| 5420418 | Semiconductor light detection device having secondary region to capture and extinguish unnecessary charges This invention relates to a light detecting device comprising a first conduction-type semiconductor substrate, a first conduction-type semiconductor crystal layer formed on the surface of the substrate, and a second conduction-type first region formed in ... | 05/30/1995 |
| 5412249 | Semiconductor device having layered electrode An n- -type InP buffer layer is formed on an n-type InP substrate. An n- -type InGaAs light absorbing layer is formed on the n- -type InP buffer layer. An n- -type InP cap layer is formed on the n- -t... | 05/02/1995 |
