Actress Jamie Lee Curtis is a patented inventor - she created a diaper equipped with a premoistened baby wipe. And that's no act!
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| Number | Title | Issue Date |
| 7438978 | Transparent conductive film, transparent conductive plate, and touch panel A touch panel having excellent durability, in which depression is scarcely generated on the surface of the touch panel by pushing the surface with a pen, and a transparent conductive film and plate useful in the touch panel are provided. The transparent conductive f... | 10/21/2008 |
| 7422970 | Method for modifying circuit within substrate A method is provided for modifying a circuit containing a plurality of electrodes, within a substrate, comprising the steps of: (a) selecting at least two electrodes for making a connection; (b) removing materials covering the electrodes with a focused ion beam (FIB... | 09/09/2008 |
| 7400023 | Photoelectric converting film stack type solid-state image pickup device and method of producing the same In a photoelectric converting film stack type solid-state image pickup device, a plurality of photoelectric converting film are stacked on a semiconductor substrate in which a signal readout circuit is formed, each of the photoelectric converting films is sandwiched... | 07/15/2008 |
| 7368772 | Active pixel having reduced dark current in a CMOS image sensor The active pixel includes a photodiode, a transfer gate, and a reset transistor. The photodiode is substantially covered with an overlying structure, thus protecting the entire surface of the photodiode from damage. This substantially eliminates potential leakage cu... | 05/06/2008 |
| 7339248 | Self-adjusting serial circuit of thin layers and method for production thereof The invention relates to a self-adjusting serial connection of thin layers and a method for the production thereof. The invention is characterized in that electrically conducting conductor tracks (20) are applied to a substrate (10), whereupon several ... | 03/04/2008 |
| 7317235 | Wafer level package structure of optical-electronic device and method for making the same A wafer level package structure of optical-electronic device and method for making the same are disclosed. The wafer level package structure of optical-electronic device is provided by employing a substrate whose surfaces have several optical sensitive areas and div... | 01/08/2008 |
| 7301213 | Acoustic sensor A sound hole is provided in a silicon substrate. A diaphragm electrode is secured to the upper surface of the silicon substrate via at least one fixed end so as to cover the sound hole of the silicon substrate. The diaphragm electrode is provided with four projectio... | 11/27/2007 |
| 7294524 | Method for fabricating image sensor without LTO-based passivation layer A method for fabricating an image sensor including a first region, which is a light receiving region, and a second region, which is a pad region, includes forming a metal line in the second region over a substrate structure comprising a photodiode, forming a passiva... | 11/13/2007 |
| 7288426 | Automatically adjusting serial connections of thick and thin layers and method for the production thereof The invention relates to a method for the production of automatically adjusting serial connections of thick and/or thin layers. The method comprises the following process steps: applying electrically conductive strip conductors (20) to a substrate (10)... | 10/30/2007 |
| 7285434 | Semiconductor package and method for manufacturing the same A semiconductor package comprises a chip, a plurality of pad extension traces, a plurality of via holes, a lid and a plurality of metal traces, wherein the chip has an active surface, a back surface opposite to the active surface, an optical component disposed on th... | 10/23/2007 |
| 7091527 | Semiconductor photodetection device A semiconductor photodetection device includes a semiconductor structure including an optical absorption layer having a photo-incidence surface on a first side thereof, a dielectric reflecting layer formed on a second side of the semiconductor structure opposite to ... | 08/15/2006 |
| 6681992 | Image reading apparatus Provided is a two dimensional image reading apparatus capable of releasing appropriately the static electricity charged in a target object to be detected, which is disposed on a photosensor device, so as to markedly suppress the malfunction of reading and... | 01/27/2004 |
| 6657180 | Detector with semiconductor for detecting ionizing radiation having a plane conducting structure A semiconductor detector including at least one block of detector pixels, each detector pixel being composed of a semiconductor element with a first face covered by a first armature and a second face covered by a second armature. The detector pixels are a... | 12/02/2003 |
| 6410922 | Forming contacts on semiconductor substrates for radiation detectors and imaging devices A method, suitable for forming metal contacts 31 on a semiconductor substrate 1 at positions for defining radiation detector cells, includes the steps of forming one or more layers of material 11,12 on a surface of the substrate with openings 23 to the su... | 06/25/2002 |
| 6363135 | Sensor with a guard electrode The invention relates to a sensor which includes a reference electrode as well as a plurality of sensor elements, each sensor element including a collector electrode and a photoconductor structure which is arranged between the reference electrode and the ... | 03/26/2002 |
| 6348362 | Manufacturing method of photovoltaic device A manufacturing method of a photovoltaic device comprising a plurality of unit cells including a first electrode of zinc oxide, a photovoltaic conversion layer, and a second electrode on a surface of a substrate includes a process for forming a zinc oxide... | 02/19/2002 |
| 6281507 | Interdigital photoconductor structure for direct X-ray detection in a radiography imaging system System and method aspects for a photoconductive element for direct x-ray detection in a radiography imaging system are described. The photoconductive element includes a photoconductive material layer for absorbing x-ray radiation transmitted through an ob... | 08/28/2001 |
| 6114696 | Uncooled infrared detector An infrared radiation detector device comprises a dipole antenna mounted on a substrate and connected through blocking contacts to a bandgap detector element. The dipole antenna has a length which is approximately one half the wavelength of the incident i... | 09/05/2000 |
| 6114697 | Bandgap radiation detector An infrared radiation detector device has an array of detectors each of which comprises a pattern of parallel detector elements. Each detector produces a pixel signal for an image. The elements of the detector are photoconductive or photovoltaic bandgap m... | 09/05/2000 |
| 6111254 | Infrared radiation detector An infrared radiation detector is disclosed which is fabricated on a dielectric substrate. The detector utilizes photosensitive segments which are included within elongate members disposed on the surface of the substrate. The elongate members comprise pho... | 08/29/2000 |
| 6100525 | Uncooled infrared detector An infrared radiation detector device comprises a dipole antenna mounted on a substrate and connected through blocking contacts to a bandgap detector element. The dipole antenna has a length which is approximately one half the wavelength of the incident i... | 08/08/2000 |
| 6078007 | Selenium photo generator cell with fluid top electrode A selenium photovoltaic cell has a top electrode formed of lemon juice or another fluid which enters into a chemical reaction with the selenium which produces a sulfur compound. A contact disk fixed to the selenium surface makes reliable contact to the fl... | 06/20/2000 |
| 6018124 | Selenium photo generator cell with fluid top electrode A selenium photovoltaic cell has a top electrode formed of lemon juice or another fluid which enters into a chemical reaction with the selenium which produces a sulfur compound. A contact disk fixed to the selenium surface makes reliable contact to the fl... | 01/25/2000 |
| 5677572 | Bilayer electrode on a n-type semiconductor An electrode in contact with a n-type semiconductor for use in an electronic or optoelectronic device is disclosed. The electrode includes a non-conducting layer contacting the semiconductor; a conductive layer contacting the non-conducting layer, and the... | 10/14/1997 |
| 5489551 | Method of fabricating thin film circuits with high density circuit interconnects by pyrolosis of an adhesive A method of fabricating a high density thin film circuit includes the step of bonding a high density connector having a plurality of electrical connection lines with a wafer having a plurality of electrical contact pads arranged in a pattern with a pitch ... | 02/06/1996 |
| 5463242 | Thin film circuits with high density connector A method of fabricating a high density thin film circuit includes the step of bonding a high density connector having a plurality of electrical connection lines with a wafer having a plurality of electrical contact pads arranged in a pattern with a pitch ... | 10/31/1995 |
| 5373175 | Ohmic electrode and a light emitting device An ohmic electrode to p-type II-VI compound semiconductor and its fabricating method are disclosed. The ohmic electrode comprises: a layer made of Pd or an alloy containing Pd; and a metal layer provided thereon. The fabricating method of an ohmic electro... | 12/13/1994 |
| 5367166 | Infrared detector devices and their manufacture Compact electrical connections (4) are formed on side-walls (1) of an infrared detector element having a step structure (1 to 3) over which a conductive layer (40) is deposited. Using a directional etching treatment, such as ion milling, the conductive la... | 11/22/1994 |
| 5304539 | Method for fabricating integrated microelectronic assembly comprising photoconductor with oxide superconducting leads A beam (e.g. a focused laser beam) is utilized to irradiate the entire lateral width of a limited-extent portion of an elongated superconducting thin-film lead. The irradiated portion is converted to be non-superconducting and photoconductive. The convert... | 04/19/1994 |
| 5278435 | High responsivity ultraviolet gallium nitride detector The invention is an Alx Ga1-x N ultraviolet detector with extremely high responsivity at over 200 to 365 nanometers and a very sharp long wavelength cutoff. The active layer for the sensors is a single crystal Alx Ga1... | 01/11/1994 |
| 5170238 | Switching element with organic insulative region A switching element is disclosed which comprises an element comprising two electrodes and an organic insulative region interposed between said two electrodes. The element has a memory property and is capable of being switched between different resistance ... | 12/08/1992 |
| 5140001 | Integrated microelectronic assembly comprising photoconductor with superconducting leads A beam (e.g. a focused laser beam) is utilized to irradiate the entire lateral width of a limited-extent portion of an elongated superconducting thin-film lead. The irradiated portion is converted to be non-superconducting and photoconductive. The convert... | 08/18/1992 |
| 5091765 | Photoconductive cell with zinc oxide tetrapod crystals A photoconductive cell comprises a photodetector section which consists of an aggregate of tetrapod-like zinc oxide whiskers. Each whisker consists of a core and needle-shaped crystals extending in four different directions from the core. Since this novel... | 02/25/1992 |
| 5043784 | Image sensor with multilayered amorphous silicon contact An image sensor having a lower electrode disposed on a surface of a substrate; a multilayered amorphous silicon layer formed on the surface of the substrate so as to cover an end portion of the lower electrode; and an upper electrode formed on the surface... | 08/27/1991 |
| 5028971 | High power photoconductor bulk GaAs switch A photoconductive switch with a low threshold energy, high voltage capability and fast rise time consisting of a semiconductive substrate comprised primarily of gallium arsenide, patterned electrodes masked onto the substrate on opposite sides, a power su... | 07/02/1991 |
| 5006711 | Multielement infrared detector for thermal imaging A multi-element infrared detector for thermal imaging, wherein the detector includes a main substrate, an aperture plate and a plurality of detector elements formed on the main substrate and arranged thereon in an array. Each detector element having a pho... | 04/09/1991 |
| 4929524 | Organic photo conductive medium There is provided an organic conductive medium, comprising an organic conductive layer formed on the surface of a substrate having fine uneven shape.... | 05/29/1990 |
| 4926228 | Photoconductive detector arranged for bias field concentration at the output bias contact A detector, of photosensitive semiconductor material with input and output bias contacts. To improve both frequency response and spatial resolution, minority carriers having tendency to accumulate in the vicinity of the output bias contact are instead rap... | 05/15/1990 |
| 4882296 | Highly blocking thin film diode having a-Si:H for image sensor rows A highly blocking diode structure having a thin film a-Si:H (amorphous silicon containing hydrogen) layer, suitable for use in constructing image sensor arrays, has two conductive electrodes disposed on opposite sides of the a-Si:H thin film layer. The st... | 11/21/1989 |
| 4864119 | Bulk avalanche semiconductor switch using a mesa structure A switch using an improved method of optically-triggered avalanche breakdown which can produce pulses of 100 picoseconds or longer duration that can deliver five kilovolts into 50 ohms using a standard laser diode. A semiconductor block is provided with c... | 09/05/1989 |