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User-operated amusement apparatus for kicking the user's buttocks
An apparatus including a user-operated and controlled apparatus for self-infliction of repetitive blows to the user's buttocks by a plurality of elongated arms bearing flexible extensions that rotate under the user's control.
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| Number | Title | Issue Date |
| 7442994 | CMOS image sensor and method for manufacturing the same A CMOS image sensor and a method for manufacturing the same improve light-receiving efficiency and maintain a margin in the design of a metal line. The CMOS image sensor includes a transparent substrate including an active area having a photodiode region and a trans... | 10/28/2008 |
| 7435616 | CMOS image sensor and method of fabricating the same Provided is a method of fabricating a CMOS image sensor. According to an embodiment method, an insulating layer can be formed on a semiconductor substrate, and a metal pad can be formed on the insulating layer. A first overcoat layer can be formed on the insulating ... | 10/14/2008 |
| 7423302 | Pinned photodiode (PPD) pixel with high shutter rejection ratio for snapshot operating CMOS sensor A pixel image sensor has a high shutter rejection ratio that prevents substrate charge leakage to a floating diffusion storage node of the pixel image sensor and prevents generation of photoelectrons within the floating diffusion storage node and storage node contro... | 09/09/2008 |
| 7420236 | Photoelectric conversion device and manufacturing method thereof A photoelectric conversion device is provided which is capable of improving the light condensation efficiency without substantially decreasing the sensitivity. The photoelectric conversion device has a first pattern provided above an element isolation region formed ... | 09/02/2008 |
| 7411276 | Photosensitive device A photosensitive device having at least an insulator layer including a plurality of photoreceiving regions disposed on a substrate. A plurality of conductive patterns is disposed on the insulator layer without covering the photoreceiving regions. A flattened dielect... | 08/12/2008 |
| 7411232 | Semiconductor photodetecting device and method of manufacturing the same A semiconductor photodetecting device is provided for enabling a solid-state image sensor to meet the requirements of higher quality imaging and more reduction in cost. The photodetecting device of the present invention includes: a semiconductor substrate; and an ep... | 08/12/2008 |
| 7388270 | Method of fabricating CMOS image sensor A method of fabricating a CMOS image sensor is provided, in which a trapezoidal microlens pattern profile is formed to facilitate reflowing the microlens pattern and by which a curvature of the microlens may be enhanced to raise its light-condensing efficiency. The ... | 06/17/2008 |
| 7381584 | CMOS image sensor and a method for fabricating the same A CMOS image sensor and method for fabricating the same is disclosed that reconditions, repairs and/or protects a surface of a photodiode area and improves characteristics of the image sensor. The method includes forming a photodiode area and a plurality of transist... | 06/03/2008 |
| 7361948 | Filter function-equipped optical sensor and flame sensor In order to provide a filter device capable of maintaining stable optical characteristics for an extended period of time and to provide also a photosensor using the filter device, a photosensor having a filter function includes a filter device having a colored glass... | 04/22/2008 |
| 7309884 | Semiconductor light receiving device and method of fabricating the same A semiconductor light receiving device is disclosed which is capable of receiving a first wavelength band light beam and a second wavelength band light beam having a shorter wavelength than that of the first wavelength band light beam. The device has a light absorbi... | 12/18/2007 |
| 7304387 | Semiconductor integrated circuit device Provided are a semiconductor integrated device and a method for fabricating the same. The semiconductor integrated circuit includes a semiconductor substrate including a first dopant, a first conductive layer pattern formed on the semiconductor substrate, an interla... | 12/04/2007 |
| 7294524 | Method for fabricating image sensor without LTO-based passivation layer A method for fabricating an image sensor including a first region, which is a light receiving region, and a second region, which is a pad region, includes forming a metal line in the second region over a substrate structure comprising a photodiode, forming a passiva... | 11/13/2007 |
| 7279354 | Microlens of CMOS image sensor and method of manufacturing the same A method of a microlens of a CMOS image sensor eliminates a flattened gap between the curvatures of adjacent microlenses. A plurality of color filter layers is formed on a semiconductor substrate on which a photodiode region, a gate electrode, an interlayer insulati... | 10/09/2007 |
| 7239001 | Tunable optical filtering component The invention relates to wavelength-selective and tunable optical filters for transmitting the light in a narrow optical spectral band, centered around an adjustable wavelength, and for blocking the transmission of wavelengths lying outside of this band. In a... | 07/03/2007 |
| 7232698 | Method for fabricating CMOS image sensor protecting low temperature oxide delamination A method for fabricating a complementary metal oxide semiconductor image sensor is capable of protecting a low temperature oxide from delaminating a passivation layer. The method includes the steps of: forming a passivation layer on a pad metal; exposing a predeterm... | 06/19/2007 |
| 7180112 | Solid-state imaging apparatus having an upwardly convex color filter layer and method of manufacturing the same In a solid-state imaging apparatus, a plurality of pixel units are arranged, the pixel units including (i) a photoelectric conversion element formed above a semiconductor substrate and (ii) a color filter layer formed above the photoelectric conversion element. In e... | 02/20/2007 |
| 7166880 | Vertical color filter sensor group with carrier-collection elements of different size and method for fabricating such a sensor group A vertical color filter sensor group formed on a substrate (preferably a semiconductor substrate) and including at least two vertically stacked, photosensitive sensors, and an array of such sensor groups. In some embodiments, a carrier-collection element of at least... | 01/23/2007 |
| 7102185 | Lightshield architecture for interline transfer image sensors An interline transfer type image sensing device that can be operated at high speed and with low image smear is described. The device incorporates a refractory metal layer which is used for both a light shield over the vertical charge transfer region and as a wiring ... | 09/05/2006 |
| 6803249 | Method of making an integrated photodetector in which a silicon nitride layer forms an anti-reflective film and part of multi-layer insulator within transistor structures A photodetector is integrated on a single semiconductor chip with bipolar transistors including a high speed poly-emitter vertical NPN transistor. The photodetector includes a silicon nitride layer serving as an anti-reflective film. The silicon nitride layer and ox... | 10/12/2004 |
| 6696740 | Photodiode A photodiode that is used in an optical communication system using two different wavelengths, λ1 and λ2 (λ1 | 02/24/2004 |
| 6665013 | Active pixel sensor having intra-pixel charge transfer with analog-to-digital converter An imaging device formed as a monolithic complementary metal oxide semiconductor integrated circuit in an industry standard complementary metal oxide semiconductor process, the integrated circuit including a focal plane array of pixel cells, each one of t... | 12/16/2003 |
| 6665014 | Microlens and photodetector An array of photosensitive devices may be formed with improved fill factors by including a diffractive microlens which may have a stepped configuration. The microlens may be formed of a sol-gel material having a photoinitiator, or other materials that may... | 12/16/2003 |
| 6635911 | Solid state image sensing device A solid state image sensing device and method of making same. The device includes a sensor portion, a vertical transfer register having a transfer electrode, a shunt interconnection of a refractory metal, and a light shielding film is provided. The shunt ... | 10/21/2003 |
| 6632700 | Method to form a color image sensor cell while protecting the bonding pad structure from damage A new method to form color image sensor cells without damaging bonding pads in the manufacture of an integrated circuit device is achieved. The method comprises, first, forming cell electrodes and bonding pads on a semiconductor substrate. A passivation l... | 10/14/2003 |
| 6630722 | Solid state image sensing device having high image quality and fabricating method thereof A color filter is formed by directly coating a color filter material on the entire groundwork device surface so as to bury the material in a recessed region, subjecting the material to pattern transfer exposure and thereafter subjecting the resulting mate... | 10/07/2003 |
| 6624404 | CMOS Image sensor having enhanced photosensitivity and method for fabricating the same There is provided a method for fabricating a CMOS image sensor having enhanced reliability and light sensitivity, which comprises the steps of providing a substrate including photosensitive elements and metal wire; forming a first protecting film for prot... | 09/23/2003 |
| 6614479 | Solid-state image pickup device in-layer lens with antireflection film with intermediate index of refraction In a solid-state image pickup device including a light receiving sensor portion in a surface layer portion of a substrate, an in-layer lens disposed above the light receiving sensor portion, a color filter disposed on the in-layer lens, and an interlayer ... | 09/02/2003 |
| 6605851 | Image sensor with large radius micro-lenses A solid state image sensor having micro-lenses connected to each other by filling separations between trapezoidal separated sections of a protection layer with photoresist and a manufacturing method thereof comprises trapezoidal separated sections of the ... | 08/12/2003 |
| 6603510 | Formation of protective coatings for color filters A structure and method for producing color filters with a protective silation layer is described. In one embodiment, each filter is coated with a silation layer to prevent bleeding of material between closely spaced filters during the fabrication process.... | 08/05/2003 |
| 6486503 | Active pixel sensor array with electronic shuttering An active pixel cell includes electronic shuttering capability. The cell can be "shuttered" to prevent additional charge accumulation. One mode transfers the current charge to a storage node that is blocked against accumulation of optical radiation. The c... | 11/26/2002 |
| 6468826 | Solid state image sensor using an intermediate refractive index antireflection film and method for fabricating the same In a solid state image sensor comprising a plurality of photoelectric conversion regions and a plurality of transfer regions which are formed in a principal surface of a semiconductor substrate, and a plurality of transfer electrodes formed above the tran... | 10/22/2002 |
| 6396046 | Imager with reduced FET photoresponse and high integrity contact via A light block material disposed over the photosensitive region of a switching device (e.g., TFT) of a radiation imager is disclosed. The light block material prevents optical photons emitted from a scintillator from passing into the switching device and b... | 05/28/2002 |
| 6388337 | Post-processing a completed semiconductor device A technique for post-processing a conventionally completed semiconductor device having a final passivation layer and bond pads exposed through the final passivation layer. The technique includes forming a protective film over the final passivation layer a... | 05/14/2002 |
| 6376872 | Focusing and color-filtering structure for semiconductor light-sensitive device An improved focusing and color-filtering structure is provided for use in a semiconductor light-sensitive device, such as CMOS (complementary metal-oxide semiconductor) light-sensitive device, that can be used, for example, on a digital camera or a PC cam... | 04/23/2002 |
| 6320178 | Optoelectronic component arrangement An optoelectronic component arrangement is indicated, which includes a radiation-sensitive detector element having a semiconductor base substrate with one or more doped partial regions and at least one partial layer which is arranged directly in front of ... | 11/20/2001 |
| 6255640 | Solid-state image sensing device and method for manufacturing solid-state image sensing device The picture quality of a solid-state image sensing device is improved and its manufacturing process is simplified. The solid-state image sensing device comprises an interlayer film having a recess above a light receiving sensor unit as well as an intra-la... | 07/03/2001 |
| 6235549 | Method and apparatus for employing a light shield to modulate pixel color responsivity A method and apparatus for employing a light shield to modulate pixel color responsivity. The improved pixel includes a substrate having a photodiode with a light receiving area. A color filter array material of a first color is disposed above the substra... | 05/22/2001 |
| 6194704 | Lens system for photodetectors An photosensitive device may be formed with a diffractive lens which offsets chromatic aberrations and dispersion caused by a refractive capture lens. The diffractive lens may be formed of a sol-gel material having a photoinitiator, or other materials inc... | 02/27/2001 |
| 6174824 | Post-processing a completed semiconductor device A technique for post-processing a conventionally completed semiconductor device having a final passivation layer and bond pads exposed through the final passivation layer. The technique includes forming a protective film over the final passivation layer a... | 01/16/2001 |
| 6157017 | Solid-state imaging devices having combined microlens and light dispersion layers for improved light gathering capability and methods of forming same Solid-state imaging devices having combined microlens and light dispersion layers include a semiconductor substrate, a light transmission layer and an improved lens layer. The semiconductor substrate and light transmission layer collectively form an imagi... | 12/05/2000 |
