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...When G.G. Hubbard learned of his future son-in-law's invention, he called it "only a toy." His daughter was engaged to a young man named Alexander Graham Bell.
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| Number | Title | Issue Date |
| 7439094 | Method of manufacturing a semiconductor package Disclosed herein are a semiconductor package used in digital optical instruments and a method of manufacturing the same. The semiconductor package comprises a wafer made of a silicon material and having pad electrodes formed at one side surface thereof, an IR filter... | 10/21/2008 |
| 7423307 | CMOS image sensor and method for fabricating the same Provided are a CMOS image sensor in which microlenses are formed in a remaining space in a patterned light shielding layer to improve image sensor characteristics and to protect the microlenses during packaging, and a method of fabricating the same. The CMOS image s... | 09/09/2008 |
| 7102185 | Lightshield architecture for interline transfer image sensors An interline transfer type image sensing device that can be operated at high speed and with low image smear is described. The device incorporates a refractory metal layer which is used for both a light shield over the vertical charge transfer region and as a wiring ... | 09/05/2006 |
| 6693337 | Semiconductor photodetection device A semiconductor photodetection device includes a semiconductor structure including an optical absorption layer having a photo-incidence surface on a first side thereof, a dielectric reflecting layer formed on a second side of the semiconductor structure o... | 02/17/2004 |
| 6690077 | Antireflective coating and field emission display device, semiconductor device and wiring line comprising same Titanium aluminum nitrogen ("Ti--Al--N") is deposited onto a semiconductor substrate area to serve as an antireflective coating. For wiring line fabrication processes, the Ti--Al--N layer serves as a cap layer which prevents unwanted reflection of photoli... | 02/10/2004 |
| 6635908 | Burying type avalanche photodiode and fabrication method thereof The object of disclosing the novel art consists in providing a highly reliable mesa-structured avalanche photo-diode using a novel structure capable of keeping the dark current low, and a fabrication method thereof. The avalanche photo-diode for achieving... | 10/21/2003 |
| 6632699 | Process for making a color selective Si detector array A multiplicity of components form a photodiode array on a substrate. Each of the components consists of a transistor of the p-n-p type with the outermost p-doped layer being transformed into an optical filter by control of the anodic etching operation uti... | 10/14/2003 |
| 6624404 | CMOS Image sensor having enhanced photosensitivity and method for fabricating the same There is provided a method for fabricating a CMOS image sensor having enhanced reliability and light sensitivity, which comprises the steps of providing a substrate including photosensitive elements and metal wire; forming a first protecting film for prot... | 09/23/2003 |
| 6613600 | Resonant photodetector A resonant photodetector assembly (10) which uses multiple reflections of light within a photodetector (20) to convert input light into an electrical signal. The photodetector (20) includes a combination of generally planar semiconductor layers including ... | 09/02/2003 |
| 6583419 | Solid state radiation detector with enhanced life duration A solid state photosensitive detector including a solid state photosensitive sensor associated with a converter designed to convert radiation to be detected into radiation to which the photosensitive sensor is sensitive. The photosensitive sensor includes... | 06/24/2003 |
| 6583481 | Electrostatic-erasing abrasion-proof coating and method for forming the same An abrasion-proof and static-erasing coating is formed on the contact surface of a contact image sensor. The coating comprises a first film having a high hardness and a low conductivity, a second film formed on the first film and having a low hardness and... | 06/24/2003 |
| 6555410 | Photodetector and device employing the photodetector for converting an optical signal into an electrical signal An anti-reflective coating having a composite layer of silicon nitride and silicon dioxide may be formed over the entire photosensitive region of the photodetector to minimize the amount of reflection. The composite layer comprises a silicon nitride layer... | 04/29/2003 |
| 6489232 | ESD resistant device A semiconductor device such as a photodetector has a substrate having an active region layer containing an active region of the device. A dielectric layer is disposed on the active region layer, and a metal active region contact is disposed in the dielect... | 12/03/2002 |
| 6486476 | Semiconductor radiation detector and manufacture thereof The semiconductor radiation detector has a low leakage current, high radiation detecting efficiency and low cost. A high-density impurity layer of the detector is formed at least on one surface of a semiconductor crystal wafer beforehand. A crystal of a s... | 11/26/2002 |
| 6465861 | Corrosion resistant imager A radiation imager is disclosed that is resistant to degradation due to moisture by either contact pad corrosion, guard ring corrosion or by photodiode leakage. A contact pad of a large area imager is disclosed that is formed into three distinct and elect... | 10/15/2002 |
| 6455879 | Low resistance contact semiconductor diode A semiconductor device wherein the layer of highly doped p-type material typically found in devices of the prior art is replaced with a layer of doped n-type material, having a doping concentration of between 1×1018 cm-3 and less th... | 09/24/2002 |
| 6437311 | Photodetector and device employing the photodetector for converting an optical signal into an electrical signal An anti-reflective coating having a composite layer of silicon nitride and silicon dioxide may be formed over the entire photosensitive region of the photodetector to minimize the amount of reflection. The composite layer comprises a silicon nitride layer... | 08/20/2002 |
| 6359291 | Corrosion resistant imager A radiation imager is disclosed that is resistant to degradation due to moisture by either contact pad corrosion, guard ring corrosion or by photodiode leakage. A contact pad of a large area imager is disclosed that is formed into three distinct and elect... | 03/19/2002 |
| 6289030 | Fabrication of semiconductor devices A method of fabricating a semiconductor optical device is provided comprising the steps of depositing planar layers of semiconductor material to form a semiconductor wafer having an optically active region, etching through the optically active region to f... | 09/11/2001 |
| 6265070 | Electrostatic-erasing abrasion-proof coating and method for forming the same An abrasion-proof and static-erasing coating is formed on the contact surface of a contact image sensor. The coating comprises a first film having a high hardness and a low conductivity, a second film formed on the first film and having a low hardness and... | 07/24/2001 |
| 6259085 | Fully depleted back illuminated CCD A backside illuminated charge coupled device (CCD) is formed of a relatively thick high resistivity photon sensitive silicon substrate, with frontside electronic circuitry, and an optically transparent backside ohmic contact for applying a backside voltag... | 07/10/2001 |
| 6255709 | Color-selective SI detector array A multiplicity of components form a photodiode array on a substrate. Each of the components consists of a transistor of the p-n-p type with the outermost p-doped layer being transformed into an optical filter by control of the anodic etching operation uti... | 07/03/2001 |
| 6224952 | Electrostatic-erasing abrasion-proof coating and method for forming the same An abrasion-proof and static-erasing coating is formed on the contact surface of a contact image sensor. The coating comprises a first film having a high hardness and a low conductivity, a second film formed on the first film and having a low hardness and... | 05/01/2001 |
| 6225212 | Corrosion resistant imager A radiation imager is disclosed that is resistant to degradation due to moisture by either contact pad corrosion, guard ring corrosion or by photodiode leakage. A contact pad of a large area imager is disclosed that is formed into three distinct and elect... | 05/01/2001 |
| 6218719 | Photodetector and device employing the photodetector for converting an optical signal into an electrical signal An anti-reflective coating having a composite layer of silicon nitride and silicon dioxide may be formed over the entire photosensitive region of the photodetector to minimize the amount of reflection. The composite layer comprises a silicon nitride layer... | 04/17/2001 |
| 6207281 | Electrostatic-erasing abrasion-proof coating and method for forming the same An abrasion-proof and static-erasing coating is formed on the contact surface of a contact image sensor. The coating comprises a first film having a high hardness and a low conductivity, a second film formed on the first film and having a low hardness and... | 03/27/2001 |
| 6194771 | Semiconductor light-receiving device having sloped groove in light receiving surface A semiconductor light-receiving device includes a light-receiving section that receives an input light. The light-receiving section includes a light-receiving surface to which the input light is directed, a groove extending vertically into the light-recei... | 02/27/2001 |
| 6188089 | Semiconductor imaging device A semiconductor imaging device includes a semiconductor radiation detector substrate, for example of cadmium zinc telluride, with at least two faces. A first face has at least one charge output contact formed from electrically conductive material or mater... | 02/13/2001 |
| 6133590 | Low resistance contact semiconductor diode A semiconductor device wherein the layer of highly doped p-type material typically found in devices of the prior art is replaced with a layer of doped n-type material, having a doping concentration of between 1×1018 cm-3 and less th... | 10/17/2000 |
| 6130422 | Embedded dielectric film for quantum efficiency enhancement in a CMOS imaging device The present invention is an image sensor and its fabricating method. The image sensor comprises a photodiode and a dielectric structure. The photodiode is responsive to an amount of incident light from a light source. The dielectric structure is on top of... | 10/10/2000 |
| 6049074 | Photoelectric conversion device In a photoelectric conversion device including peripheral ICs, the peripheral ICs are in thermal contact with a substrate having photoelectric conversion elements and a chassis, which covers the peripheral ICs and has high thermal conductivity, via a ther... | 04/11/2000 |
| 6040613 | Antireflective coating and wiring line stack Titanium aluminum nitrogen ("Ti--Al--N") is deposited onto a semiconductor substrate area to serve as an antireflective coating. For wiring line fabrication processes, the Ti--Al--N layer serves as a cap layer which prevents unwanted reflection of photoli... | 03/21/2000 |
| 6037609 | Corrosion resistant imager A radiation imager is disclosed that is resistant to degradation due to moisture by either contact pad corrosion, guard ring corrosion or by photodiode leakage. A contact pad of a large area imager is disclosed that is formed into three distinct and elect... | 03/14/2000 |
| 6034725 | Semiconductor image sensor with an insulating barrier layer An image sensor comprises switching elements 30 on a substrate 1. An insulating separation layer 9 is disposed over the switching elements so that a photodiode arrangement 20a disposed over the insulating separation layer 9, can overlap the switching elem... | 03/07/2000 |
| 6025585 | Low-resistivity photon-transparent window attached to photo-sensitive silicon detector The invention comprises a combination of a low resistivity, or electrically conducting, silicon layer that is transparent to long or short wavelength photons and is attached to the backside of a photon-sensitive layer of silicon, such as a silicon wafer o... | 02/15/2000 |
| 6008525 | Minority carrier device comprising a passivating layer including a Group 13 element and a chalcogenide component A minority carrier device includes at least one junction of at least two dissimilar materials, at least one of which is a semiconductor, and a passivating layer on at least one surface of the device. The passivating layer includes a Group 13 element and a... | 12/28/1999 |
| 5935723 | Environmentally resistant, infrared-transparent window structure A window structure includes a first window layer including a zinc sulfide substrate coated on each side with an antireflective coating, and a second window layer including a sapphire substrate coated on each side with an antireflective coating. The two wi... | 08/10/1999 |
| 5936268 | Epitaxial passivation of group II-VI infrared photodetectors An array 1 of photodiodes 2 is comprised of a Group II-VI material, such as HgCdTe, which may be selectively doped to form a plurality of diode junctions. Array 1 is comprised of a plurality of photodiodes 2 which are disposed in a regular, two dimensiona... | 08/10/1999 |
| 5880510 | Graded layer passivation of group II-VI infrared photodetectors A Group II-VI IR photodiode 10 has a passivation layer 16 overlying at least exposed surfaces of the p-n diode junction 15, the passivation layer being a compositionally graded layer comprised of Group II atoms diffused into a surface of the p-n diode jun... | 03/09/1999 |
| 5871847 | Electrostatic-erasing abrasion-proof coating and method for forming the same An abrasion-proof and static-erasing coating is formed on the contact surface of a contact image sensor. The coating comprises a first film having a high hardness and a low conductivity, a second film formed on the first film and having a low hardness and... | 02/16/1999 |
