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| Number | Title | Issue Date |
| 7420257 | Backside-illuminated photodetector The present invention provides a back illuminated photodetector having a sufficiently small package as well as being capable of suppressing the scattering of to-be-detected light. A back illuminated photodiode 1 comprises an N-type semiconductor substrate ... | 09/02/2008 |
| 7384880 | Method for making a semiconductor device having a high-k gate dielectric A method for making a semiconductor device is described. That method comprises converting a hydrophobic surface of a substrate into a hydrophilic surface, and forming a high-k gate dielectric layer on the hydrophilic surface. ... | 06/10/2008 |
| 7187019 | Solid state image pickup device and method of fabricating the same Disclosed is a solid state image pickup device including a Si substrate, a conductive pattern such as transfer-accumulation electrodes and a buffer wiring formed above the Si substrate, an insulating film provided above the Si substrate in the state of covering the ... | 03/06/2007 |
| 7078354 | Method of manufacturing semiconductor device having oxide films with different thickness After a first gate oxide film (302) is formed on a substrate (301), a nitride layer (303) is formed by a first oxynitriding process. The first gate oxide film is selectively removed from a thinner film part area of the substrate. A second gate o... | 07/18/2006 |
| 6649519 | Reducing reflectivity on a semiconductor wafer by annealing titanium and aluminum The present invention provides methods of producing an anti-reflective layer on a semiconductor wafer/device and wafers/devices including that anti-reflective layer. The anti-reflective layer is produced by annealing layers of titanium and aluminum on a w... | 11/18/2003 |
| 6646808 | Microlens formed of negative photoresist By forming a microlens of negative photoresist, economical microlens fabrication processes may be used which, in some embodiments, may achieve microlenses having good optical clarity and high thermal stability. In one embodiment, a positive photoresist ma... | 11/11/2003 |
| 6635860 | Radiation detector A solvent-resistant and carrier-selective high-resistance film is formed between a radiation sensitive type amorphous semiconductor thick film, and a voltage application electrode in such a manner as to cover the entire surface of the amorphous semiconduc... | 10/21/2003 |
| 6348721 | Reducing reflectivity on a semiconductor wafer by annealing titanium and aluminum The present invention provides methods of producing an anti-reflective layer on a semiconductor wafer/device and wafers/devices including that anti-reflective layer. The anti-reflective layer is produced by annealing layers of titanium and aluminum on a w... | 02/19/2002 |
| 6338978 | Image sensor and method for fabricating the same A solid state image sensor according to the present invention includes a p-type conductivity type well formed in a surface of an n-type conductivity type semiconductor substrate in which a photoelectric conversion region is defined. A photoelectric conver... | 01/15/2002 |
| 6171883 | Image array optoelectronic microelectronic fabrication with enhanced optical stability and method for fabrication thereof A method for forming an image array optoelectronic microelectronic fabrication, and the image array optoelectronic microelectronic fabrication formed employing the method. There is first provided a substrate having a photoactive region formed therein. The... | 01/09/2001 |
| 6166405 | Solid-state imaging device A solid-state imaging device comprises a plurality of pixels, each pixel comprising a semiconductor substrate; a photo-receiving portion formed in the semiconductor substrate; a detecting region formed in the semiconductor substrate; an insulating film fo... | 12/26/2000 |
| 6147373 | Image sensor and method for fabricating the same A solid state image sensor according to the present invention includes a p-type conductivity type well formed in a surface of an n-type conductivity type semiconductor substrate in which a photoelectric conversion region is defined. A photoelectric conver... | 11/14/2000 |
| 6127715 | Photodetector element containing circuit element and manufacturing method thereof Si3 N4 having high humidity resistance is used as a surface protecting insulating film covering a metal layer. At a bonding pad portion where metal layer is directly exposed, coverage is provided by anti-corrosion metal portion consi... | 10/03/2000 |
| 6080987 | Infrared-sensitive conductive-polymer coating This is a novel conductive-polymer optical coating for infrared detection and method of making the same. The system may comprise an integrated circuit substrate itself comprising a plurality of mesas and comprising via connections on an upper portion of e... | 06/27/2000 |
| 5838052 | Reducing reflectivity on a semiconductor wafer by annealing titanium and aluminum The present invention provides methods of producing an anti-reflective layer on a semiconductor wafer/device and wafers/devices including that anti-reflective layer. The anti-reflective layer is produced by annealing layers of titanium and aluminum on a w... | 11/17/1998 |
| 5795617 | Charged coupled device with improved coating An improved coating for a charged coupled device is disclosed which eliminates problems caused by prior coatings. The coating does not significantly decrease quantum efficiency in any spectral range of interest.... | 08/18/1998 |
| 5729021 | X-ray image sensor An x-ray image sensor (1) with a lead-oxide photoconductor layer (6) positioned between collecting electrodes (3) and a common electrode (2) is provided with a passivation layer (7) which separates the lead-oxide from the metal of the common electrode to ... | 03/17/1998 |
| 5654565 | Charge coupled device with filling film and method of manufacture thereof A solid state image picking-up device such as a charge coupled device (CCD) includes a channel region and a photo-diode region formed on a semiconductor region apart from each other, a first insulating film formed on the semiconductor region including the... | 08/05/1997 |
| 5585280 | Method of fabricating solid state radiation imager with high integrity barrier layer A radiation imager includes a photosensor barrier layer disposed between an amorphous silicon photosensor array and the scintillator. The barrier layer includes two strata, the first stratum being silicon oxide disposed over the upper conductive layer of ... | 12/17/1996 |
| 5462882 | Masked radiant anneal diffusion method Only the areas of the CdTe/HgCdTe interface of a FPA detector circuit which is coupled by an epoxy to a silicon-based integrated circuit that require interdiffusing are heated to a sufficiently high temperature or have photons of light impinging thereon f... | 10/31/1995 |
| 5463225 | Solid state radiation imager with high integrity barrier layer and method of fabricating A radiation imager includes a photosensor barrier layer disposed between an amorphous silicon photosensor array and the scintillator. The barrier layer includes two strata, the first stratum being silicon oxide disposed over the upper conductive layer of ... | 10/31/1995 |
| 5449950 | Photosensor with organic and inorganic insulation layers A photosensor includes a substrate; a photoconductive layer formed on the substrate; a pair of electrodes mounted on and electrically connected to the photoconductive layer; a light reception portion formed between the electrodes; and a protective layer f... | 09/12/1995 |
| 5420445 | Aluminum-masked and radiantly-annealed group II-IV diffused region Only the areas of the CdTe/HgCdTe interface of a FPA detector circuit which is coupled by an epoxy to a silicon-based integrated circuit that require interdiffusing are heated to a sufficiently high temperature or have photons of light impinging thereon f... | 05/30/1995 |
| 5391913 | Semiconductor device In the present invention, for the purpose of precluding defective image caused by stains adhering on the surfaces of a semiconductor device and a color filter of a solid-state color image sensor, a semiconductor device excellent in the water- and oil- rep... | 02/21/1995 |
| 5357101 | Electro-optical transceiver with nonimaging concentrator A compact high efficiency electro-optical information collection system is ideally suited for application as an optical front-end receiver in miniature bar code reading systems, optical local area networks (LANs) used in computer communications and other ... | 10/18/1994 |
| 5309132 | Technique for trimming photoresistors and trimmed photoresistors A technique for trimming photoresistors to change relatively high tolerance parts to relatively low tolerance parts by blocking out a portion of the photoactive area, and the so-trimmed photoresistors. The blocking out can be performed by placing ink over... | 05/03/1994 |
| 5233181 | Photosensitive element with two layer passivation coating A photosensitive element has a two tier passivation layer disposed between the top contact layer and the amorphous silicon photosensor island. The passivation layer includes an inorganic moisture barrier layer which is disposed at least over the sidewalls... | 08/03/1993 |
| 5171994 | Infrared staring imaging array Monolithic InSb array devices are described for staring infrared imaging systems operating in the 3-5 μm spectral region. These devices are fabricated with only 4 mask levels compared to 5 mask levels for prior devices and have higher output dynamic rang... | 12/15/1992 |
| 5118944 | Infrared ray sensor and method of manufacturing the same Disclosed is an infrared ray sensor and a method of manufacturing the same. The infrared ray sensor includes a sensor substrate formed of an infrared ray transmitting material and having a first surface and a second surface which is in opposed relation to... | 06/02/1992 |
| 5081347 | Photoelectric converting apparatus with reflection-prevention section A photoelectric converting apparatus has a reflection preventing section. The section is formed on at least a peripheral portion of said light receiving section.... | 01/14/1992 |
| 5043784 | Image sensor with multilayered amorphous silicon contact An image sensor having a lower electrode disposed on a surface of a substrate; a multilayered amorphous silicon layer formed on the surface of the substrate so as to cover an end portion of the lower electrode; and an upper electrode formed on the surface... | 08/27/1991 |
| 5007689 | Infra-red transmitting optical components and optical coatings therefor Infrared transmitting optical components having a wide variety of substrates (e.g. ZnS, ZnSe, Ge, Si, SiO2) are disclosed all with an optical coating of boron phosphide (BP). The boron phosphide may be a single layer coating or one layer of a m... | 04/16/1991 |
| 4973537 | Photoconductive element A photoconductive element is described, comprising an amorphous silicon sensor and a transparent, insulative protective layer on the sensor, said protective layer comprising polymers or copolymers (including terpolymers, etc.) having one of four specific ... | 11/27/1990 |
| 4962985 | Protective coatings for optical devices comprising Langmuir-Blodgett films A semiconductor optical device, such as a photodetector or a semiconductor laser, is sealed by a Langmuir-Blodgett film that intercepts the optical path extending from the device. The film is less than one-thirtieth of a wavelength at the operating optica... | 10/16/1990 |
| 4960436 | Radiation or light detecting semiconductor element containing heavily doped p-type stopper region A radiation or light detecting semiconductor element comprises a p-type monocrystalline silicon substrate having a high specific resistance of about 10,000 ohm-cm, a stopper layer formed in a part of a first principal surface of the substrate and diffused... | 10/02/1990 |
| 4855795 | Photosensor A photosensor comprises an insulating substrate, an electrode, a photoconductor layer composed of a hydrogenated amorphous silicon semiconductor layer obtained by the glow discharge decomposition of monosilane gas, a junction stabilizing layer composed of... | 08/08/1989 |
| 4851367 | Method of making primary current detector using plasma enhanced chemical vapor deposition Disclosed is an improvement in a method of making a primary current detector by plasma enhanced chemical vapor deposition, where a gas mixture comprising a carrier gas, a dopant gas, and silane gas is passed through a plasma in a vacuum chamber thereby fo... | 07/25/1989 |
| 4829353 | Photoelectric converting device A photoelectric converting device in which a photoelectric converting part is covered directly with a passivation film made of a silicone resin. The passivation film is made by directly applying on the photoelectric converting part a mixture of silicone b... | 05/09/1989 |
| 4816183 | Composite photosensitive material A composite photosensitive material of enhanced sensitivity to, and absorption of, incident radiation, wherein an array of particles of an electrically conducting material is embedded in and dispersed through a semiconducting matrix transparent to the wav... | 03/28/1989 |
| 4720627 | Ion sensitive photodetector A photodetector using a modified gate controlled diode has therein a layer of photoactive material. Photons interacting therein cause the formation of free protons which alter the electrical characteristics of the photodetector. The change in electrical c... | 01/19/1988 |
