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"I watched his countenance closely, to see if he was not deranged ... and I was assured by other senators after he left the room that they had no confidence in it."
U.S. Senator Smith of Indiana ; After seeing Samuel Morse demonstrate the telegraph.
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| Number | Title | Issue Date |
| 7405092 | Method of manufacturing electron-emitting device and method of manufacturing image display apparatus A method of manufacturing an electron-emitting device with a stable electrical characteristics without variation per each of the devices is provided, by forming, on a substrate, a cathode electrode, a carbon layer on the cathode electrode, and a gate electrode, disp... | 07/29/2008 |
| 7259055 | Method of forming high-luminescence silicon electroluminescence device A method for forming a high-luminescence Si electroluminescence (EL) phosphor is provided, with an EL device made from the Si phosphor. The method comprises: depositing a silicon-rich oxide (SRO) film, with Si nanocrystals, having a refractive index in the range of ... | 08/21/2007 |
| 7135712 | Electroluminescent device An electroluminescent device (13), such as a light emitting diode, which has a light-reflecting surface (10) causing undesirable reflection of ambient light incident on the device is provided with a combination of a reflective circular polarizer (17... | 11/14/2006 |
| 7102185 | Lightshield architecture for interline transfer image sensors An interline transfer type image sensing device that can be operated at high speed and with low image smear is described. The device incorporates a refractory metal layer which is used for both a light shield over the vertical charge transfer region and as a wiring ... | 09/05/2006 |
| 7084936 | Display including electroluminescent elements and liquid crystal elements aligned with each other in front and rear direction of the display A display includes a display surface, an electroluminescent panel, which has a plurality of electroluminescent elements, and a liquid crystal panel, which has a plurality of liquid crystal elements. The liquid crystal panel and the electroluminescent panel overlaps ... | 08/01/2006 |
| 6703644 | Method for producing a semiconductor configuration In a method for producing a semiconductor configuration that includes at least two semiconductor elements, at least two differently doped surface regions are embodied on the top side of a semiconductor substrate. After that, an active layer structure incl... | 03/09/2004 |
| 6690041 | Monolithically integrated diodes in thin-film photovoltaic devices The present invention relates to the design of and includes monolithically integrated diodes for use in planar, thin-film, photovoltaic devices, such as solar cells.... | 02/10/2004 |
| 6596986 | Reflective sensor A reflection sensor (1) for detecting presence of a detection object is provided. The reflection sensor comprises a light emitting element (31), a light receiving element (32) cooperative with the light emitting element, a first resin body (21) enclosing ... | 07/22/2003 |
| 6444491 | Composite semiconductor devices and method for manufacture thereof An integrated semiconductor device is formed from two fabricated semiconductor devices each having a substrate by placing an etch-resist on the substrate of the one semiconductor device, by bonding the conductors of one of the fabricated semiconductor dev... | 09/03/2002 |
| 6172417 | Integrated semiconductor devices An integrated semiconductor device is formed by bonding the conductors of one fabricated semiconductor device having a substrate to the conductors on another fabricated semiconductor device having a substrate, flowing an etch-resist in the form of a photo... | 01/09/2001 |
| 6150677 | Method of crystal growth of compound semiconductor, compound semiconductor device and method of manufacturing the device A semiconductor layer consisting of Ga1-x Inx Ny As1-y and/or GaNy As1-y and formed by incorporating nitrogen into a group III-V mixed crystal semiconductor is provided on a GaAs substrate. ... | 11/21/2000 |
| 6136627 | High-resolution light-sensing and light-emitting diode array and fabrication method thereof A light-sensing/emitting diode array chip has impurity diffusion regions with a depth of at least 0.5 μm but not more than 2 μm in a semiconductor substrate. Each impurity diffusion region is preferably divided into a first region, used for emitting or ... | 10/24/2000 |
| 5714772 | Method of manufacturing light converter with amorphous-silicon pin heterojunction diode A method of manufacturing a light converter with an LED and an amorphous-silicon pin heterojunction diode includes steps of a) preparing an LED structure on one side of a substrate as a light-emitting unit; b) forming a buffer layer on the other side of t... | 02/03/1998 |
| 5677552 | Optical control circuit for an optical pnpn thyristor The invention provides an optical functioning device which emits and receives light, and a driver circuit for controlling the device with light. In the device, elements, in which semiconductor multilayer-film reflecting mirrors are provided at both the up... | 10/14/1997 |
| 5533041 | Optical transmission and reception device An optical transmission and reception device comprises an optical transmission region including an active layer which oscillates and outputs laser beam of a wavelength λ1 on a transmission state, and guides received light of a wavelength λ2 different fr... | 07/02/1996 |
| 5525539 | Method for forming a light emitting diode for use as an efficient emitter or detector of light at a common wavelength An infrared LED can function efficiently as both an emitter and a detector at a common wavelength without undesirable characteristics found in avalanche diodes. The LED comprises a graded-bandgap Ga1-x Alx As semiconductor material w... | 06/11/1996 |
| 5448082 | Light emitting diode for use as an efficient emitter or detector of light at a common wavelength and method for forming the same An infrared LED can function efficiently as both an emitter and a detector at a common wavelength without undesirable characteristics found in avalanche diodes. The LED comprises a graded-bandgap Ga1-x Alx As semiconductor material w... | 09/05/1995 |
| 5436472 | Photointerrupter A photointerrupter is provided which comprises a resinous hollow holder case including an opposed pair of housing portions separated by an intermediate wall portion for accommodating a light emitting element and a light receiving element, respectively. Th... | 07/25/1995 |
| 5393994 | Optical semiconductor device for neural network An optical semiconductor device is disclosed which includes a semiconductor laser having at least an active layer, reflecting means formed on the semiconductor laser for reflecting internal feedback light generated from the semiconductor laser and at leas... | 02/28/1995 |
| 5378902 | Optoelectronic maximum identifier for detecting the physical location of a maximum intensity optical signal in a winner-take-all network A number of light sensitive/generating devices are arranged in rows and columns to thereby form an X-Y pixel matrix. All devices are interconnected to a source of operating voltage such that the first device to turn on, i.e., the first device to receive a... | 01/03/1995 |
| 5293393 | Vertical-to-surface transmission electrophotonic device A vertical-to-surface transmission electrophotonic device in a structure having a first distributed Bragg reflector of a first conductivity type, a first spacer layer of the first conductivity type, an active layer, a second spacer layer of a second condu... | 03/08/1994 |
| 5262656 | Optical semiconductor transceiver with chemically resistant layers An opto-electronic device which monolithically integrates a laser emitter and an optical detector positioned in-line on a single waveguide, in which the laser emitter and detector operate at different wavelengths. Such an opto-electronic device may find p... | 11/16/1993 |
| 5260586 | Optical exclusive-or element An optical EXCLUSIVE-OR element in which the number of basic elements is reduced which results in increased integration of the element. The optical EXCLUSIVE-OR element comprises a substrate, a first optical functional element and a second optical functio... | 11/09/1993 |
| 5198684 | Semiconductor integrated circuit device with optical transmit-receive means A semiconductor integrated circuit device comprising a plurality of semiconductor packaging substrates arranged parallel to one another, a plurality of semiconductor integrated circuits mounted on each of the semiconductor packaging substrates, a circuit ... | 03/30/1993 |
| 5140152 | Full duplex optoelectronic device with integral emitter/detector pair A semiconductor optoelectronic device provides full duplex data communication over a single optical fiber. The semiconductor device comprises a unitary P-N light emitting portion and an N-I-P photodiode portion. The light emitting portion and the photodio... | 08/18/1992 |
| 5136353 | Optical switch The present invention relates to an optical switch which will generate and emit a beam of light when an optical signal is directed therein, but includes means to inhibit the generation of the beam of light when a second optical signal is directed therein.... | 08/04/1992 |
| 5130762 | Integrated quantum well feedback structure An integrated semiconductor device comprising a light emitting portion and a light detecting portion is disclosed. The integrated semiconductor device comprises two multiple quantum well P-I-N structures formed on a single substrate, one of the P-I-N stru... | 07/14/1992 |
| 5097299 | Multi-bandgap single dual function light emitting/detecting diode The invention relates to a semiconductor diode capable of performing the dual functions of emission and detection of optical signals. The diode can be used in a bidirectional optical communication link alternating between transmitting and receiving optica... | 03/17/1992 |
| 5014096 | Optoelectronic integrated circuit with optical gate device and phototransistor An optoelectronic integrated circuit including an optical bistable circuit comprises: an optical gate device responsive to a current injected to an active layer thereof and to a first ray transmitted through the active layer for emitting first and second ... | 05/07/1991 |
| 4989051 | Bi-directional, feed through emitter-detector for optical fiber transmission lines A unitary emitter-detector diode device for direct optical coupling to optical transmission lines as two surface oriental optical fibers on lateral surfaces of the device. The device has a p-n junction formed between a heavily doped semiconducting layer a... | 01/29/1991 |
| 4969152 | Photo-lasertransistor The invention relates to a photo-laser transistor with a base-collector pn-junction biased in the non-conducting direction and a base-emitter pn-junction biased in the conducting direction. With the invention, the functions of optical to electronic conver... | 11/06/1990 |
| 4948960 | Dual mode light emitting diode/detector diode for optical fiber transmission lines This invention relates to a double heterostructure diode and photodiode which is selectively switchable between an emission mode and receiving mode. A light emitting active region is localized and restricted by limitation of the area of contact to a windo... | 08/14/1990 |
| 4933561 | Monolithic optocoupler with electrically conducting layer for diverting interference A monolithic optocoupler has a semi-insulating substrate and two opto-components (A, B) arranged thereon, between which signals and/or power can be transmitted through optical radiation. In order to suppress interference transferred capacitively and/or re... | 06/12/1990 |
| 4910571 | Optical semiconductor device An optical semiconductor device comprises cathode and anode regions, and a gate region having a forbidden band gap narrower than those of the cathode and anode regions. The gate region is sandwiched by the cathode and anode regions. The optical semiconduc... | 03/20/1990 |
| 4906835 | Light sensing and emitting devices with a safelight A light sensor for use to detect only light above a given frequency uses as its light sensitive element a light emitting diode. The L.E.D. is one which, if it were arranged to emit light, would emit light having a maximum frequency equal to the said given... | 03/06/1990 |
| 4864168 | Process for controlling an optical pnpn thyristor to be driven A process for controlling an optical pnpn thyristor to be driven comprises a step of applying a train of pulses to maintain a low impedance state of an optical pnpn thyristor which is shifted beforehand to be in the low impedance state by a positive set p... | 09/05/1989 |
| 4838633 | Semiconductor device with high speed signal transmission arrangement utilizing light In a semiconductor device wherein a signal transmission in a semiconductor integrated electronic circuit is carried out partly or entirely by means of a light, the signal transmission on the light is carried out with multi-wavelength, waveguides or a phot... | 06/13/1989 |
| 4833511 | Phototransistor device An improved phototransistor device comprises a collector region and a base region respectively provided on the opposite sides of a multiple quantum well, and an emitter region provided on one side of the base region. A reverse-biased voltage is applied ac... | 05/23/1989 |
| 4829357 | PNPN thyristor A pnpn thyristor comprises an anode and cathode region, and a base region which is positioned between the anode and cathode regions. The base region is composed of a p-base layer facing the cathode region, and a first to third n-base layers. Among the fir... | 05/09/1989 |
| 4773074 | Dual mode laser/detector diode for optical fiber transmission lines The invention relates to an emitter-receiver semiconductor diode device for direct optical coupling to optical signal transmission apparatus. It is a unitary combination of a double heterostructure diode and a waveguide photodiode with elements to selecti... | 09/20/1988 |
