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| Number | Title | Issue Date |
| 7432578 | CMOS image sensor with enhanced photosensitivity A photosensitive device is disclosed which comprises a semiconductor substrate, at least one reverse biased device, such as a P-N junction diode formed in the semiconductor substrate, and at least one photosensitive layer disposed above the semiconductor substrate a... | 10/07/2008 |
| 7385232 | CMOS imager with enhanced transfer of charge and low voltage operation and method of formation A dopant gradient region of a first conductivity type and a corresponding channel impurity gradient below a transfer gate and adjacent a charge collection region of a CMOS imager photodiode are disclosed. The channel impurity gradient in the transfer gate provides a... | 06/10/2008 |
| 7321141 | Image sensor device and manufacturing method thereof A semiconductor substrate is provided on which a plurality of shallow trench isolations (STI) defining a plurality of active areas are formed. The active areas comprise a photo sensing region, and a plurality of photodiodes are formed in each photo sensing region. T... | 01/22/2008 |
| 7279725 | Vertical diode structures A method of making a vertical diode structure is provided, the vertical diode structure having associated therewith a diode opening extending through an insulation layer and contacting an active region on a silicon wafer. A titanium silicide layer covers the interio... | 10/09/2007 |
| RE39780 | Photoelectric converter, its driving method, and system including the photoelectric converter A photoelectric converter of a high signal-to-noise ratio, low cost, high productivity and stable characteristics and a system including the above photoelectric converter. The photoelectric converter includes a photoelectric converting portion in which a first elect... | 08/21/2007 |
| 7250647 | Asymmetrical transistor for imager device An imager device that has mitigated dark current leakage and punch-through protection. The transistor associated with the photoconversion device is formed with a single (i.e, one-sided) active area extension region on one side of the transistor gate opposite the pho... | 07/31/2007 |
| 7247899 | Semiconductor device, photoelectric conversion device and method of manufacturing same In a photoelectric conversion device having a buried layer in a part of an anode and a cathode of a photodiode, such as a CCD having a sensor structure and a CMOS sensor, well of the same conduction type as the conduction type of the buried layer can be disposed in ... | 07/24/2007 |
| 7180151 | Image sensor having self-aligned and overlapped photodiode and method of making same An image sensing device includes a gate dielectric layer formed on a substrate and a transfer gate formed on the gate dielectric layer. A masking layer is formed on the transfer gate, the masking layer having a width smaller than a width of the transfer gate, such t... | 02/20/2007 |
| 7170103 | Wafer with vertical diode structures A method of making a vertical diode is provided, the vertical diode having associated therewith a diode opening extending through an insulation layer and contacting an active region on a silicon wafer. A titanium silicide layer covers the interior surface of the dio... | 01/30/2007 |
| 7132724 | Complete-charge-transfer vertical color filter detector A vertical-color-filter detector disposed in a semiconductor structure comprises a complete-charge-transfer detector comprising semiconductor material doped to a first conductivity type and has a horizontal portion disposed at a first depth in the semiconductor stru... | 11/07/2006 |
| 5877040 | Method of making charge-coupled device with microlens A CCD and manufacturing method thereof is disclosed including: a first conductivity-type substrate having a convex portion; a first conductivity-type charge transmission domain formed on the substrate excluding the convex portion; a light detecting domain... | 03/02/1999 |
| 5744831 | Solid-state image pick-up device A solid-state image pick-up device 20 having a photoreceiving section 3 disposed on the obverse surface of a substrate 2 and performing photoelectric conversion. A readout gate 5 is disposed at one end of the photoreceiving section 3. A channel stop 8 is ... | 04/28/1998 |
| 5693967 | Charge coupled device with microlens A CCD and manufacturing method thereof is disclosed including: a first conductivity-type substrate having a convex portion; a first conductivity-type charge transmission domain formed on the substrate excluding the convex portion; a light detecting domain... | 12/02/1997 |
| 5591988 | Solid state imaging device with low trap density A substrate (1) has a surface covered with an insulation layer (2), on which an active layer (3') made of non-single crystal silicon through thin film technique is provided. A gate electrode layer (5') is partially provided on said active layer through a ... | 01/07/1997 |
| 5574293 | Solid state imaging device using disilane A substrate (1) has a surface covered with an insulation layer (2), on which an active layer (3') made of non-single crystal silicon through thin film technique is provided. A gate electrode layer (5') is partially provided on said active layer through a ... | 11/12/1996 |
| 5270221 | Method of fabricating high quantum efficiency solid state sensors A method for fabricating thinned, back-illuminated, solid state image sensors 10 includes steps of positively doping a bottom surface 22 of a top semiconductor wafer 24, and bonding the bottom surface 22 of the top semiconductor wafer 24 to a top surface ... | 12/14/1993 |
| 5188988 | Passivation oxide conversion wherein an anodically grown oxide is converted to the sulfide A method of passivation of Hg1-x Cdx Te and similar semiconductors by surface oxidation (such as anodic) followed by chemical conversion of the oxide to either sulfide or selenide or a combination of both is disclosed. Preferred embo... | 02/23/1993 |
| 5162251 | Method for making thinned charge-coupled devices A standard thick silicon charge-coupled device (FIG. 1A) has its pixel face mounted to a transparent, optically flat glass substrate using a thin layer of thermoset epoxy. The backside silicon of the charge-coupled device is thinned to 10 &#b1;0.5 um usin... | 11/10/1992 |
| 5130259 | Infrared staring imaging array and method of manufacture Monolithic InSb array devices are described for staring infrared imaging systems operating in the 3-5 μm spectral region. These devices are fabricated with only 4 mask levels compared to 5 mask levels for prior devices and have higher output dynamic rang... | 07/14/1992 |
| 5036376 | Passivation oxide conversion A method of passivation of Hg1-x Cdx Te and similar semiconductors by surface oxidation (such as anodic) followed by chemical conversion of the oxide to either sulfide or selenide or a combination of both is disclosed. Preferred embo... | 07/30/1991 |
| 5005063 | CCD imaging sensor with flashed backside metal film A backside illuminated CCD imaging sensor for reading out image charges from wells of the array of pixels is significantly improved for blue, UV, far UV and low energy x-ray wavelengths (1-5000Å) by so overthinning the backside as to place the depletion ... | 04/02/1991 |
| 4912536 | Charge accumulation and multiplication photodetector A charge accumulation and multiplication photodetector has a unit cell composed of three gates formed on a substrate. The first gate serves as a photodetector and charge integrator. The second gate serves as a transfer control gate and the third gate serv... | 03/27/1990 |
| 4910570 | Photo-detector for ultraviolet and process for its production A semiconductor photo-detector is disclosed. The inventive photo-detector is especially sensitive to light in the ultraviolet and/or blue portions of the spectrum. The semiconductor body comprising the detector is arranged with a band structure which, thr... | 03/20/1990 |
| 4885620 | Semiconductor element A semiconductor element with a basic region, to which a bias voltage is applied from at least one boundary surface and which completely depletes the basic region of majority carriers and produces a potential minimum in the basic region for the majoity car... | 12/05/1989 |
| 4840918 | Method of noise reduction in CCD solid state imagers A method to reduce the dark current in CCD solid state imagers is disclosed. This method involves sintering an unpatterned Al film on top of an oxide layer at 450° C. for a time to generate sufficient numbers of atomic hydrogen atoms to diffuse through t... | 06/20/1989 |
| 4807007 | Mis infrared detector having a storage area A method and an apparatus which permits use of a metal-insulator-semiconductor device as an infrared detector. A single layer of metal is provided having an extremely thin portion through which infrared radiation can pass and a thick portion through which... | 02/21/1989 |
| 4760031 | Producing CCD imaging sensor with flashed backside metal film A backside illuminated CCD imaging sensor for reading out image charges from wells of the array of pixels is significantly improved for blue, UV, far UV and low energy x-ray wavelengths (1-5000Å) by so overthinning the backside as to place the depletion ... | 07/26/1988 |
| 4672455 | Solid-state image-sensor having reverse-biased substrate and transfer registers A solid-state image sensor having a plurality of unit cells, each of which includes a photosensitive area and a CCD register for the transfer of a signal charge generated in said photosensitive area, both the photosensitive area and the CCD register are d... | 06/09/1987 |
| 4503450 | Accumulation mode bulk channel charge-coupled devices An accumulation-mode bulk channel CCD converts an electromagnetic radiation pattern into electrical signals. The device body may be of monocrystalline silicon and has a radiation-sensitive region which is of a first conductivity type determined by a dopan... | 03/05/1985 |
| 4435897 | Method for fabricating solid-state image sensor In the fabrication of a solid-state image sensor of the type having a plurality of photoelectric transducer means on a semiconductor substrate of one conductivity, excessive charge drain regions each provided with a plurality of first electrodes and secon... | 03/13/1984 |
| 4422091 | Backside illuminated imaging charge coupled device An imaging charge coupled device (CCD) is provided which has a support on the non-illuminated, circuit side of a CCD channel layer. The other side of the CCD channel layer (the semiconductor side) is epitaxially joined to an absorber layer of semiconducto... | 12/20/1983 |
| 4336295 | Method of fabricating a transparent metal oxide electrode structure on a solid-state electrooptical device A method of fabricating an electrode structure of transparent metal oxide on a solid-state electrooptical device is disclosed. A layer of conductive transparent metal oxide is deposited on the surface of the device. Thereafter, the transparent conductive ... | 06/22/1982 |
| 4321747 | Method of manufacturing a solid-state image sensing device A solid-state image sensing device having an enhanced sensitivity to a short wavelength comprises an optical substrate for passing a predetermined light therethrough, a semiconductor substrate supported on the optical substrate and a plurality of electrod... | 03/30/1982 |
| 4266235 | Optoelectronic sensor according to the principle of carrier injection The invention relates to an optoelectronic sensor with at least one sensor element according to the principle of carrier injection (CID), whereby the surface of a doped semiconductor body is faced by two closely adjoining electrodes insulated from one ano... | 05/05/1981 |
| 4245233 | Photosensitive device arrangement using a drift field charge transfer mechanism A photosensitive element and a photosensitive device arrangement using the element include a charge transfer structure having an electrode layer extending over a photosensitive area of a semiconductor body. In operation, a bias potential is applied to the... | 01/13/1981 |
| 4197552 | Luminescent semiconductor devices Luminescent semiconductor device having a wide-gap semiconductor material substrate (e.g., ZnS), a thin (.ltorsim.100A thick) alkali halide insulating layer (e.g., NaI, KI, LiI) in the substrate and a metal layer on the insulating layer such that the insu... | 04/08/1980 |
| 4025910 | Solid-state camera employing non-volatile charge storage elements A non-volatile charge storage element wherein long-term charge storage occurs in the interface states of the element. Charge is stored at low applied voltages (ࣘ 10 volts) in short times (ࣘ 1 microseconds) and is stored as long as 105 secon... | 05/24/1977 |
| 4004148 | Accumulation mode charge injection infrared sensor The present invention relates to an accumulation mode charge injection device utilizing the extrinsic photoconductivity of a doped semiconductor material to sense infrared radiation. The device is operated at cryostatic temperatures to preclude thermal io... | 01/18/1977 |
| 3952323 | Semiconductor photoelectric device A semiconductor photoelectric device of improved photoelectric and rectifying characteristics is provided by first forming a film or silicon dioxide on a main surface, having a crystallographic orientation of (100), of a semiconductor substrate of N-type ... | 04/20/1976 |
