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| Number | Title | Issue Date |
| RE39780 | Photoelectric converter, its driving method, and system including the photoelectric converter A photoelectric converter of a high signal-to-noise ratio, low cost, high productivity and stable characteristics and a system including the above photoelectric converter. The photoelectric converter includes a photoelectric converting portion in which a first elect... | 08/21/2007 |
| 6696314 | CMOS imager and method of formation A CMOS imager having an epitaxial layer formed below pixel sensor cells is disclosed. An epitaxial layer is formed between a semiconductor substrate and a photosensitive region to improve the cross-talk between pixel cells. The thickness of the epitaxial ... | 02/24/2004 |
| 6661047 | CMOS imager and method of formation A CMOS imager having an epitaxial layer formed below pixel sensor cells is disclosed. An epitaxial layer is formed between a semiconductor substrate and a photosensitive region to improve the cross-talk between pixel cells. The thickness of the epitaxial ... | 12/09/2003 |
| 6645788 | CMOS imager and method of formation A CMOS imager having an epitaxial layer formed below pixel sensor cells is disclosed. An epitaxial layer is formed between a semiconductor substrate and a photosensitive region to improve the cross-talk between pixel cells. The thickness of the epitaxial ... | 11/11/2003 |
| 6194770 | Photo receptor with reduced noise An improved low voltage, small surface area, high signal-to-noise ratio photo gate includes a layer of photoreceptive semiconductor material having an impurity concentration selected to enhance the formation of hole electron pairs in response to photons i... | 02/27/2001 |
| 5962893 | Schottky tunneling device An n-semiconductor layer is arranged on a low-resistance n-substrate. A drain electrode is in ohmic contact with the n-substrate. A source electrode forms a Schottky junction with the n-semiconductor layer. A gate electrode is arranged adjacent to the sou... | 10/05/1999 |
| 5920078 | Optoelectronic device using indirect-bandgap semiconductor material This invention relates to the field of semiconductor devices. Silicon-based semiconductor devices ordinarily lack desirable optical properties because silicon's small, indirect band gap causes electrons to emit radiation with negligible quantum efficiency... | 07/06/1999 |
| 5909041 | Photogate sensor with improved responsivity A depleted-gate photosensor, or photogate, structure includes a polysilicon layer disposed over a silicon substrate. The polysilicon layer occupies only a portion of each exposure area of the substrate, and is preferably in the form of a ring around the e... | 06/01/1999 |
| 5880494 | Active type photoelectric converting device and an active type solid-state imaging device using the same An active type photoelectric converting device includes: a transistor formed in a surface region of a semiconductor body, the transistor accumulating signal charges generated by light incident on the transistor at the surface region of the semiconductor b... | 03/09/1999 |
| 5859450 | Dark current reducing guard ring A photodiode is provided. The photodiode includes an insulative region (IR) that permits passage of light therethrough. The photodiode also includes a substrate region of a first conductivity type and a well region of a second conductivity type. The well ... | 01/12/1999 |
| 5680229 | Photoelectric conversion apparatus with band gap variation in the thickness direction There is disclosed a photoelectric conversion element having a photoelectric conversion portion, at least comprising an insulating layer, a photoconductive semiconductor layer provided in contact with said insulating layer, and made of a non-single crysta... | 10/21/1997 |
| 5583338 | HgCdTe S-I-S two color infrared detector A HgCdTe S-I-S (semiconductor-insulator-semiconductor) two color infrared detector wherein the semiconductor regions are group II-VI, preferably HgCdTe, with different compositions for the desired spectral regions. The device is operated as a simple integ... | 12/10/1996 |
| 5567956 | Information processing apparatus including a photoelectric conversion element having a semiconductor layer with a varying energy band gap width An information processing apparatus including a photoelectric conversion element having a photoelectric conversion section. The photoelectric conversion section has an insulating layer with first and second opposed surfaces, and a photoconductive semicond... | 10/22/1996 |
| 5527397 | Photoelectric conversion device The present photoelectric conversion device includes a photo-receiving surface generating electron-hole pairs due to a distortion of an energy band thereof after receiving light, and two contacts contacting the photo-receiving surface for separating the e... | 06/18/1996 |
| 5374841 | HgCdTe S-I-S two color infrared detector A HgCdTe S-I-S (semiconductor-insulator-semiconductor) two color infrared detector wherein the semiconductor regions are HgCdTe with different compositions for the desired spectral regions. The device is operated as a simple integrating MIS device with re... | 12/20/1994 |
| 5247193 | Semiconductor insulated gate device with four electrodes A semiconductor device serving as a semiconductor light-emitting element, a semiconductor light-receiving element, or a transistor, includes a first semiconductor layer of a first conductivity type having an ohmic electrode on one surface thereof, a secon... | 09/21/1993 |
| 5188970 | Method for forming an infrared detector having a refractory metal Method of manufacturing an infrared detector having a refractory metal (16) within the metal-insulator-semiconductor structure (MIS) provides a process applicable for high volume production of infrared focal plane array detectors. The process of the prese... | 02/23/1993 |
| 5171994 | Infrared staring imaging array Monolithic InSb array devices are described for staring infrared imaging systems operating in the 3-5 μm spectral region. These devices are fabricated with only 4 mask levels compared to 5 mask levels for prior devices and have higher output dynamic rang... | 12/15/1992 |
| 5132761 | Method and apparatus for forming an infrared detector having a refractory metal Method of manufacturing an infrared detector having a refractory metal (16) within the metal-insulator-semiconductor structure (MIS) provides a process applicable for high volume production of infrared focal plane array detectors. The process of the prese... | 07/21/1992 |
| 5083175 | Method of using offset gated gap-cell thin film device as a photosensor A method of utilizing a thin film device as a photosensor. The thin film device comprises a substrate upon which is deposited a charge transport layer, first and second injecting electrodes in low electrical resistance contact with the charge transport la... | 01/21/1992 |
| 5049950 | MIS structure photosensor A MIS structure is provided which uses a photoconductive amorphous silicon carbide layer as an insulator layer in the MIS structure. The insulator layer is disposed on an n-type layer of single crystal silicon carbide and a translucent metal layer is disp... | 09/17/1991 |
| 5027177 | Floating base lateral bipolar phototransistor with field effect gate voltage control A lateral bipolar phototransistor having a floating, photosensitive base region is formed in a silicon layer on an insulator substrate. Insulated gate electrodes are formed above and below the base reigon and are voltage biased to create a field effect ca... | 06/25/1991 |
| 4975750 | Semiconductor device A semiconductor device having a sandwich construction formed by causing a semiconductor region and an opposed region to face each other across a thin film which is made of a substance having a wider forbidden band gap than that of the semiconductor region... | 12/04/1990 |
| 4916505 | Composite unipolar-bipolar semiconductor devices A composite unipolar-bipolar semiconductor device in which a sourceless field-effect transistor structure is fabricated upon the outer face of one member of a junction diode structure. In some embodiments the gate portion of the sourceless field-effect tr... | 04/10/1990 |
| 4910570 | Photo-detector for ultraviolet and process for its production A semiconductor photo-detector is disclosed. The inventive photo-detector is especially sensitive to light in the ultraviolet and/or blue portions of the spectrum. The semiconductor body comprising the detector is arranged with a band structure which, thr... | 03/20/1990 |
| 4843446 | Superconducting photodetector A photodetector which operates at a cryogenic temperature by utilizing superconductivity is disclosed. A plurality of mutually spaced-apart superconducting layers are formed in such a manner as to be in contact with a semiconductor layer at least one of t... | 06/27/1989 |
| 4829354 | Drift field switch A drift field switch incorporating a layer of semiconductor material having a first conductivity type, two spaced apart regions having the same conductivity type or a second conductivity type which function as summing buses, a layer of resistive material ... | 05/09/1989 |
| 4766471 | Thin film electro-optical devices An electro-optical communication device which includes a light transmissive conduit integrally formed to interconnect a light emitter and a light detector. The length over which the light transmissive conduit extends is substantially greater than the size... | 08/23/1988 |
| 4695715 | Infrared imaging array employing metal tabs as connecting means An infrared radiation detection device utilizing an array of metal electrodes deposited on the insulated surface of a suitable semiconductor material such as an indium antimonide substrate. The detector electrodes are read out by discharging each electrod... | 09/22/1987 |
| 4616403 | Configuration of a metal insulator semiconductor with a processor based gate A method for fabricating a metal insulator semiconductor includes first forming a substrate (10) having an array of switching elements formed therein. A plurality of deformable Indium pads (16) and (18) are then formed on the surface of the substrate and ... | 10/14/1986 |
| 4447291 | Method for via formation in HgCdTe A via formation process for HgCdTe (i.e., for pseudo-binary alloys of HgTe and CdTe). Photoresist is patterned on the HgCdTe surface, and ion milling is used to cut holes in the HgCdTe as defined by the photoresist. With this photoresist still in place, t... | 05/08/1984 |
| 4242695 | Low dark current photo-semiconductor device A photo-semiconductor device includes an active region of semiconductor material in which carriers contributing to a photocurrent are generated by the irradiation of incident light. On one surface of the active region is formed a main junction towards whi... | 12/30/1980 |
| 4214264 | Hybrid color image sensing array A hybrid color image sensing array includes: (a) an array of semiconductor image sensing elements, each element having superposed upper and lower light responsive channels for producing first and second photosignals, the intrinsic spectral responses of th... | 07/22/1980 |
| 4165471 | Optical sensor apparatus A light sensing apparatus is described which employs a GaAsP MOS light-receiving element to which a potential is applied for creating a depletion region. Upon exposure, minority carriers are generated and trapped. Light levels are sensed by a charge injec... | 08/21/1979 |
| 4155094 | Solid-state imaging device In a semiconductor photoelectric device comprising a plurality of photodiodes, MOS transistor switches and signal output means which are provided on a semiconductor substrate, a solid-state imaging device characterized in that said each photodiode is cons... | 05/15/1979 |
| 4140909 | Radiation detector A layer of transparent conductive material insulatingly overlies a major surface of a substrate of semiconductor material to provide a CIS (conductor-insulator-semiconductor) capacitor. A region of opposite conductivity type is provided in the substrate a... | 02/20/1979 |
| 4101924 | Semiconductor radiation detector A structure is described in which a large area depletion region is provided in a semiconductor substrate of one conductivity type for the conversion of photons into charge and in which a small area region of opposite conductivity type is provided in the s... | 07/18/1978 |
| 4057819 | Semiconductor device The invention relates to a photo-sensitive solid-state electronic device whose anode-cathode current is modified by photon induced changes in the electrical condition of a dielectric layer on the semiconductor body. The invention is primarily concerned wi... | 11/08/1977 |
| 4019199 | Highly sensitive charge-coupled photodetector including an electrically isolated reversed biased diffusion region for eliminating an inversion layer A solid-state charge-coupled photoconductor for image scanning including a p-type substrate having a silicon dioxide layer on the surface thereof with the exception of one or more areas in which an n+ diffusion area is located. A polysilicon gate is locat... | 04/19/1977 |
| 3996599 | Image detector with background suppression A balanced metal-oxide-semiconductor detector is provided which senses only he difference in radiation level between elements of a radiation image. The same detector is provided in a silicon base structure modified to be responsive to band-gap energy at lo... | 12/07/1976 |
