Class 257/E31.076 - Photo MESFET (EPO)

Subclass of Class 257 - Active solid-state devices (e.g., transistors, solid-state diodes)
Definition: This subclass is indented under subclass E31.074. This subclass
No. of patents: 22
Last issue date: 08/22/2006

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Number	Title	Issue Date
7095060	Unit for driving light-emitting device A unit according to the present invention includes a substrate and an IC chip used for driving a light-emitting device. A relay terminal is provided at a region spaced from peripheral areas of the substrate so as to connect the light-emitting device with the IC chip...	08/22/2006
5811322	Method of making a broadband backside illuminated MESFET with collecting microlens A composite-layer semiconductor device includes a gate above a host substrate, an n++ contact layer above the gate, and source and drain ohmic contacts applied to the n++ contact layer. The source and drain ohmic contacts define a central gate location wh...	09/22/1998
5804847	Backside illuminated FET optical receiver with gallium arsenide species A photo FET device having a large area backside optical energy reception surface is disclosed. The photo FET device is fabricated in the source gate and drain upward configuration and then inverted onto a new permanent substrate member and an original sur...	09/08/1998
5739561	Light sensitive semiconductor device and method of operation A light sensitive semiconductor device (10) is formed in a well region (12) in a semiconductor substrate (11). A first voltage (30) is applied to a source region (4) of the semiconductor device (10) and to a contact region (13) to the well region (12) to ...	04/14/1998
5686756	Compound field effect transistor having a conductive layer comprising a III-V group compound A compound semiconductor field effect transistor has a semiconductive layer made of a compound which consists of a single III group element and a single V group element or a compound which consists of two III group elements and a single V group element in...	11/11/1997
5633512	Semiconductor device for varying the mobility of electrons by light irradiation A semiconductor device in which a current is controlled by light includes a semiconductor member having a source unit and a drain unit and a channel unit through which electrons may flow between the source unit and the drain unit. The channel unit has a q...	05/27/1997
5608255	FET optical receiver using backside illumination, indium materials species A photo FET device having a large area backside optical energy reception surface is disclosed. The photo FET device is fabricated in the source gate and drain upward configuration using a lattice determining surrogate substrate and a mesa-forming deep etc...	03/04/1997
5567973	Optical field-effect transistor with improved sensitivity An FET or MESFET having a semiconductor optically transparent gate. A substrate having a doped channel placed thereon together with a source and a drain with a semiconductor gate formed therebetween may be manufactured using conventional semiconductor man...	10/22/1996
5536954	Optically coupled MESFET An optically coupled FET comprised of bottom layer, a top layer in which FET is formed and an intermediate layer having a waveguide communicating with a grating in registration with the FET....	07/16/1996
5532173	FET optical receiver using backside illumination, indium materials species A photo FET device having a large area backside optical energy reception surface is disclosed. The photo FET device is fabricated in the source gate and drain upward configuration using a lattice determining surrogate substrate and a mesa-forming deep etc...	07/02/1996
5453630	Variable gain optical detector An optical detector comprised of a MESFET having a larger than usual separation between its source and drain electrodes and a channel between the source and drain electrodes doped with carriers having a density of at least 1018 /cm3 ...	09/26/1995
5329137	Integrated total internal reflection optical switch utilizing charge storage in a quantum well An optical switch comprises a heterojunction transistor having a source electrode, a gate, a mesa, and three self-aligned waveguides, the mesa being ion implanted and having a single quantum well under the gate electrode, the single quantum well being com...	07/12/1994
5298739	Photodetector capable of sweeping out unwanted carriers and an optical communication system including the same A light absorbing layer is formed in a photodetector that receives and detects light guided therein. Carriers are generated in the light absorbing layer in response to the guided light. Unwanted carriers likely to be generated in regions other than the li...	03/29/1994
5285514	Waveguide type photodetector and a method of fabricating the same In a waveguide type photodetector for receiving and detecting a light guided thereinto, a groove is formed in a semiconductor substrate, a waveguide layer is formed on the semiconductor substrate, and a light absorbing layer for absorbing a light propagat...	02/08/1994
5196717	Field effect transistor type photo-detector A field effect type photo-detector comprises a semiconductor buffer layer arranged on a substrate. A semiconductor activation layer is arranged on that buffer layer, and a source electrode, a drain electrode and a gate electrode are arranged on the activa...	03/23/1993
4970386	Vertical FET high speed optical sensor A high speed optical sensor comprising a parallel array of vertical field effect transistors and optical fibers disposed in the recesses between the transistors is disclosed herein. Each of the vertical field effect transistors includes a substrate of dop...	11/13/1990
4872744	Single quantum well optical modulator High speed optoelectronic devices which are suitable for use in an optical integrated circuit design. The devices comprise a monolithic planar structure wherein exciton-resonant light propagates along a single mode waveguide containing a single quantum we...	10/10/1989
4821093	Dual channel high electron mobility field effect transistor A multi-terminal Group III-V semiconductor high electron mobility field effect transistor comprised of a sandwich of molecular beam epitaxially grown layers and including two high mobility charge flow channels in respective two dimensional electron gas re...	04/11/1989
4739385	Modulation-doped photodetector A modulation-doped field effect photodetector has a fast response time....	04/19/1988
4618024	Moving seismic source system for use in water-covered areas A moving seismic source system for the use in water-covered areas comprising a conventional source and streamer cable means with multiple receiver, and additionally includes between the source and receivers a volume of the body of water containing a small...	10/21/1986
4416053	Method of fabricating gallium arsenide burris FET structure for optical detection A GaAs FET structure with a high electric field region, or active region, contacted by source, gate and drain electrodes is provided which can be used for high speed optical detection or for microwave oscillator optical injection locking. The device provi...	11/22/1983
4346394	Gallium arsenide burrus FET structure for optical detection A GaAs FET structure with a high electric field region, or active region, contacted by source, gate and drain electrodes is provided which can be used for high speed optical detection or for microwave oscillator optical injection locking. The device provi...	08/24/1982

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Class 257/E31.076 - Photo MESFET (EPO)