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| Number | Title | Issue Date |
| 7420228 | Bipolar transistor comprising carbon-doped semiconductor A bipolar transistor comprising a collector region of a first conduction type, and a subcollector region of the first conduction type at a first side of the collector region. The transistor further includes a base region of the second conduction type provided at a s... | 09/02/2008 |
| 7271070 | Method for producing transistors The invention relates to a method for producing integrable semiconductor components, especially transistors or logic gates, using a p-doped semiconductor substrate. First of all, a mask is applied to the semiconductor substrate in order to define a window that is de... | 09/18/2007 |
| 7132677 | Super bright light emitting diode of nanorod array structure having InGaN quantum well and method for manufacturing the same An GaN light emitting diode (LED) having a nanorod (or, nanowire) structure is disclosed. The GaN LED employs GaN nanorods in which a n-type GaN nanorod, an InGaN quantum well and a p-type GaN nanorod are subsequently formed in a longitudinal direction by inserting ... | 11/07/2006 |
| 6653715 | Bipolar transistor A bipolar transistor using a B-doped Si and Ge alloy for a base in which a Ge content in an emitter-base depletion region and in a base-collector depletion region is greater than a Ge content in a base layer. Diffusion of B from the base layer can be supp... | 11/25/2003 |
| 6632699 | Process for making a color selective Si detector array A multiplicity of components form a photodiode array on a substrate. Each of the components consists of a transistor of the p-n-p type with the outermost p-doped layer being transformed into an optical filter by control of the anodic etching operation uti... | 10/14/2003 |
| 6624449 | Three terminal edge illuminated epilayer waveguide phototransistor A three terminal edge illuminated epilayer waveguide phototransistor including a subcollector layer formed of an epitaxially grown quaternary semiconductor material, such as heavily doped InGaAsP. A collector region of undoped InGaAs is epitaxially grown ... | 09/23/2003 |
| 6580106 | CMOS image sensor with complete pixel reset without kTC noise generation In an image sensing array, the structure of the image sensor pixel is based on a vertical punch through transistor with a junction gate surrounding its source and connected to it, the junction gate being further surrounded by an MOS gate. The new pixel ha... | 06/17/2003 |
| 6255709 | Color-selective SI detector array A multiplicity of components form a photodiode array on a substrate. Each of the components consists of a transistor of the p-n-p type with the outermost p-doped layer being transformed into an optical filter by control of the anodic etching operation uti... | 07/03/2001 |
| 6137123 | High gain GaN/AlGaN heterojunction phototransistor A GaN/AlGaN heterojunction bipolar phototransistor having AlGaN contact, i-GaN absorbing, p-GaN base and n-GaN emitter layers formed, in that order, on a UV transparent substrate. The phototransistor has a gain greater than 105. From 360 nm to ... | 10/24/2000 |
| 6002142 | Integrated optoelectronic structures incorporating P-type and N-type layer disordered regions Novel semiconductor devices are monolithically defined with p-type and/or n-type wide bandgap material formed by impurity induced layer disordering of selected regions of multiple semiconductor layers. The devices are beneficially fabricated by simultaneo... | 12/14/1999 |
| 5994162 | Integrated circuit-compatible photo detector device and fabrication process An integrated circuit-compatible photo detector is disclosed which is particularly compatible with BiCMOS fabrication processes. In a first aspect, the photo detector is formed as a lateral phototransistor having a semiconductor substrate, a base structur... | 11/30/1999 |
| 5889296 | Semiconductor optical device and an optical processing system that uses such a semiconductor optical system A photodetection device includes a collector layer, a collector electrode connected electrically to the collector layer, a base layer free from a junction region for contacting with an electrode, an emitter layer including at least two, mutually separated... | 03/30/1999 |
| 5844253 | High speed semiconductor phototransistor The present invention relates to an ultra-high speed semiconductor phototransistor which comprises a substrate. A conductive collector layer, on which a collector electrode is formed, is formed on the substrate. A collector barrier layer for collector ele... | 12/01/1998 |
| 5734191 | Contactless capacitor-coupled bipolar active pixel sensor with integrated electronic shutter A contactless capacitor coupled bipolar phototransistor having an integrated electronic shutter for reducing the overflow and blooming problems associated with the imaging of strong images. Overflow control and an anti-blooming mechanism are obtained by u... | 03/31/1998 |
| 5708281 | Semiconductor device and photoelectric conversion apparatus using the same A semiconductor device comprises an emitter of first conductivity type, a base of second conductivity type, and a collector of first conductivity type. At least a vicinity of an interface of the emitter to base junction is formed by Si. Polycrystalline or... | 01/13/1998 |
| 5677551 | Semiconductor optical device and an optical processing system that uses such a semiconductor optical system A photodetection device includes a collector layer, a collector electrode connected electrically to the collector layer, a base layer free from a junction region for contacting with an electrode, an emitter layer including at least two, mutually separated... | 10/14/1997 |
| 5612255 | One dimensional silicon quantum wire devices and the method of manufacture thereof A silicon quantum wire transistor. A silicon substrate is sub-etched leaving a thin ridge (ࣘ500 Å tall by ࣘ500 Å wide) of silicon a quantum wire, on the substrate surface. An FET may be formed from the quantum wire by depositing or growing gate oxid... | 03/18/1997 |
| 5604364 | Photoelectric converter with vertical output lines A photoelectric converter comprising a photosensor element, a typical example of the photosensor element comprising: a transistor including an n or n+ collector region an n- region disposed contiguous to the collector region, a p bas... | 02/18/1997 |
| 5602413 | Avalanche phototransistor A bipolar avalanche phototransistor has a thin, heavily doped base portion adjacent the collector to improve avalanche characteristics. The structure may have a lateral, as well as vertical, collector, with the thin heavily doped base portion adjoining th... | 02/11/1997 |
| 5598023 | Photoelectric converting apparatus A photoelectric converting apparatus has a semiconductor transistor for accumulating carriers generated by a light excitation into a control electrode region. A portion in the control electrode region other than at least a portion which contributes to an ... | 01/28/1997 |
| 5576237 | Method of manufacturing a capacitor coupled contactless imager with high resolution and wide dynamic range A capacitor coupled contactless imager structure and a method of manufacturing the structure results in a phototransistor that structure includes an N-type collector region formed in P-type semiconductor material. A P-type base region is formed in the col... | 11/19/1996 |
| 5566044 | Base capacitor coupled photosensor with emitter tunnel oxide for very wide dynamic range in a contactless imaging array A technique for decreasing the effective gain of a bipolar phototransistor at high light levels makes the image usable over a greatly extended range of illumination conditions. The effective current gain at high light levels is reduced by fabricating a "n... | 10/15/1996 |
| 5563431 | Photoelectrical converter with refresh means A photoelectric converter is adapted for an accumulation operation, readout operation and refresh operation. The photoelectric converter includes a transistor including a control electrode region having a semiconductor of a first conductivity type, a firs... | 10/08/1996 |
| 5557117 | Heterojunction bipolar transistor and integrated circuit device using the same A heterojunction bipolar transistor includes a collector contact layer constituted by a high-concentration first semiconductor layer of a first conductivity type formed on a semiconductor substrate, a collector region stacked on the collector contact laye... | 09/17/1996 |
| 5552619 | Capacitor coupled contactless imager with high resolution and wide dynamic range A capacitor coupled contactless imager structure and a method of manufacturing the structure results is a phototransistor that structure includes an N-type collector region formed in P-type semiconductor material. A P-type base region is formed in the col... | 09/03/1996 |
| 5517052 | Deep-diffused phototransistor A large area deep-diffused phototransistor having a photosensitive area of at least 1 mm2, and typically 25 mm2 or larger includes a light entry layer of a deep-diffused p type semiconductor material; at least one well of an n type s... | 05/14/1996 |
| 5500550 | Photoelectric converting device A photoelectric converting device comprises a first semiconductor area of a first conductivity type, a second semiconductor area of a second conductivity type, and a third semiconductor area of the first conductivity type. A charge is photoelectrically ex... | 03/19/1996 |
| 5483096 | Photo sensor A photo sensor comprises a semiconductor substrate, a bipolar photo transistor having an emitter region, a base region and a collector region which is formed in the surface region of the semiconductor substrate, a silicon dioxide formed on the bipolar pho... | 01/09/1996 |
| 5466954 | Shunt phototransistor with reverse bias protection A phototransistor is provided with a first resistor that operates as a shunt and a second resistor that operates to protect the device from damage that could be caused by a reverse bias condition. The possible damage results from the creation of a PN junc... | 11/14/1995 |
| 5459332 | Semiconductor photodetector device A semiconductor photodetector employs a multilayer structure for controlling speed, efficiency and noise. A light-absorbing low band gap semiconductor emitter layer produces photogenerated charge upon absorption of light. A semiconductor collector layer c... | 10/17/1995 |
| 5399880 | Phototransistor with quantum well base structure A long wavelength (6 to 20 μm) phototransistor is described which has n-doped silicon as emitter and collector regions bracketing a base region having a quantum well structure made up of alternating layers of p-doped silicon germanium and undoped silicon... | 03/21/1995 |
| 5361273 | Semiconductor optical surface transmission device The invention provides a semiconductor optical surface transmission device comprising a laser element and a photo-transistor element formed on a semiconductor substrate through which light transmissions are made. Each of the laser element and the photo-tr... | 11/01/1994 |
| 5360759 | Method for manufacturing a component with porous silicon For manufacturing a component with porous silicon, two highly doped regions with a lightly doped region arranged between them are formed in a silicon wafer. The dopant concentrations are thereby set such that porous silicon arises in the lightly doped reg... | 11/01/1994 |
| 5347142 | Modes of infrared hot electron transistor operation in infrared detection A circuit incorporating an infrared hot electron transistor having a common base and biasing voltages. In one embodiment, the circuit is configured to take advantage of the photovoltage amplification capabilities of the infrared hot electron transistor. I... | 09/13/1994 |
| 5345094 | Light triggered triac device and method of driving the same Disclosed is a semiconductor device comprising an output Triode AC switch with a vertical structure, which is provided in a silicon substrate and has a gate, a first output terminal and a second output terminal, and an input/driving photo Triode AC switch... | 09/06/1994 |
| 5343054 | Semiconductor light-detection device with recombination rates According to this invention, a phototransistor includes an n-type InP emitter layer formed on an n+ -type InP substrate, a p- -type InGaAsP base layer, and a light-absorbing n- -type InGaAsP collector layer. An undoped InG... | 08/30/1994 |
| 5311047 | Amorphous SI/SIC heterojunction color-sensitive phototransistor An amorphous Si/SiC heterojunction color-sensitive phototransistor was successfully fabricated by plasma-enhanced chemical vapor deposition. The structure is glass/ITO/a-Si(n+ -i-p+)/a-SiC(i-n+)/Al. The device is a bulk ba... | 05/10/1994 |
| 5245204 | Semiconductor device for use in an improved image pickup apparatus A semiconductor device comprises a collector region of first conductivity type, a base region of second conductivity type, and an emitter region of first conductivity. The base region has first base area and second base area provided around the first base... | 09/14/1993 |
| 5243216 | Phototransistor A phototransistor includes a monocrystalline semiconductor substrate of a first conductivity type, a crystalline semiconductor layer of a second conductivity type formed from a surface of the semiconductor substrate to a predetermined depth, a substantial... | 09/07/1993 |
| 5223919 | Photosensitive device suitable for high voltage operation A photosensitive device includes a semiconductor body (1) having a first region (2) of one conductivity type adjacent a given surface (3) of the body with a second region (4) of the opposite conductivity type surrounding the first region (2) so as to form... | 06/29/1993 |
