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| Number | Title | Issue Date |
| 7397102 | Junction barrier schottky with low forward drop and improved reverse block voltage This invention discloses a junction barrier Schottky device supported on a substrate that has a first conductivity type. The Schottky device includes a first diffusion region of a first conductivity type for functioning as a forward barrier height reduction region. ... | 07/08/2008 |
| 7368762 | Heterojunction photodiode The present invention provides a heterojunction photodiode which includes a pn or Schottky-barrier junction formed in a first material region having a bandgap energy Eg1. When reverse-biased, the junction creates a depletion region which expands towards a... | 05/06/2008 |
| 6579740 | Method of making a thin film sensor In a thin-film infrared sensor, (100)-oriented semiconductor substrate is used for the sensor fabrication. A surface of the substrate is partially masked to provide an unmasked section where a concave is made and a masked section on the back side of an al... | 06/17/2003 |
| 6512279 | Photoelectric converter, its driving method, and system including the photoelectric converter A photoelectric converter of a high signal-to-noise ratio, low cost, high productivity and stable characteristics and a system including the above photoelectric converter. The photoelectric converter includes a photoelectric converting portion in which a ... | 01/28/2003 |
| 6342720 | Voltage-controlled wavelength-selective photodetector A voltage-controlled, wavelenght-selective photodetector includes comprising a double diode having a counter-polarized Si-Schottky diode and a SiGe PIN diode. The short-wave portion (λ | 01/29/2002 |
| 6262421 | Solid state radiation detector for x-ray imaging A solid state radiation detector for medical imaging incorporates an array of transistors and a continuous radiation detecting layer positioned over the transistors and electrically coupled to the transistors. The transistors may reside on a plurality of ... | 07/17/2001 |
| 6255227 | Etching process of CoSi2 layers The present invention relates to methods for controlling the etching rate of CoSi2 layers by adjusting the pH of an HF-based solution to obtain the desired etch rate. The pH of the HF-based solution may be adjusted by adding pH modifying chemic... | 07/03/2001 |
| 6211560 | Voltage tunable schottky diode photoemissive infrared detector PtSi/Si Schottky diode infrared detectors are currently being used in large-area focal plane arrays for imaging in the 3-5 micron atmospheric transmission window. Their photoresponse cuts off at about 6 microns, beyond which they cannot detect infrared ra... | 04/03/2001 |
| 6184563 | Device structure for providing improved Schottky barrier rectifier This invention discloses a Schottky barrier rectifier formed in a semiconductor chip of a first conductivity type having a cathode electrode connected thereto near a bottom surface of the semiconductor chip. The Schottky rectifier further includes an epit... | 02/06/2001 |
| 6153484 | Etching process of CoSi2 layers The present invention relates to methods for controlling the etching rate of CoSi2 layers by adjusting the pH of an HF-based solution to obtain the desired etch rate. The pH of the HF-based solution may be adjusted by adding pH modifying chemic... | 11/28/2000 |
| 6104074 | Schottky barrier detectors for visible-blind ultraviolet detection The invention concerns the fabrication and characterization of vertical geometry transparent Schottky barrier ultraviolet detectors based on n- /n+ -GaN and AlGaN structures grown over sapphire substrates. Mesa geometry devices of di... | 08/15/2000 |
| 5977603 | Infrared detector and fabrication method thereof In a IR detector and a fabrication method thereof, the IR detector has a insulating thin film (3) made up of insulating material, many semiconductor layers (1) each having an island shape formed on the insulating thin film (3), a forward bias connection s... | 11/02/1999 |
| 5962893 | Schottky tunneling device An n-semiconductor layer is arranged on a low-resistance n-substrate. A drain electrode is in ohmic contact with the n-substrate. A source electrode forms a Schottky junction with the n-semiconductor layer. A gate electrode is arranged adjacent to the sou... | 10/05/1999 |
| 5961741 | Metal semiconductor optical device The present invention provides a metal semiconductor optical device which is capable of thinly uniformly growing a metal film on a semiconductor substrate using a layer functioning as an interface active agent and decreasing the density of interface energ... | 10/05/1999 |
| 5960256 | Wafer layout of semiconductor device and manufacturing method thereof A wafer layout for a multi-channel device for improving the yield of operative devices comprises a semiconductor wafer and a plurality of semiconductor devices formed in the semiconductor wafer, each device comprising a consecutive series of impurity regi... | 09/28/1999 |
| 5945720 | Photo-receiving device with light guide A high-speed, high-sensitivity photo-receiving device has a light-absorbing substrate, on which a pair of electrodes are provided. An insulative optical guide is located over an exposed surface portion of the substrate constituting an optical window. The ... | 08/31/1999 |
| 5942756 | Radiation detector and fabrication method A solid state radiation detector provides a plurality of modules disposed adjacent one another in a two-dimensional array. Each of the modules includes an array of thin film transistors. A continuous radiation detecting layer, such as a photoconductor lay... | 08/24/1999 |
| 5895938 | Semiconductor device using semiconductor BCN compounds Disclosed is a semiconductor device comprising a semiconductor BCN compound layer and a metallic BCN compound layer and/or an insulating BCN compound layer, wherein the semiconductor BCN compound layer and the metallic BCN compound layer and/or insulating... | 04/20/1999 |
| 5895227 | Method of fabricating a photo-device A method of fabricating a photo-device includes the steps of forming an optically nontransparent, electrically conductive layer on the surface of a photoelectric conversion substrate, and transferring a portion of the optically nontransparent, electricall... | 04/20/1999 |
| 5872386 | Wafer layout of semiconductor device A wafer layout for a multi-channel device for improving the yield of operative devices comprises a semiconductor wafer and a plurality of semiconductor devices formed in the semiconductor wafer, each device comprising a consecutive series of impurity regi... | 02/16/1999 |
| 5859464 | Optoelectronic diode and component containing same An optoelectronic component has an Al2 O3 or Si substrate having a surface on which a buried CoSi2 layer is provided, a Si layer overlying the buried CoSi2 layer. A metal layer on a portion of this latter Si lay... | 01/12/1999 |
| 5814873 | Schottky barrier infrared sensor A solid-state infrared sensor using a Schottky barrier diode. The sensor has a first layer of a semiconductor of a first conductivity type and a second layer of a metal or a metal silicide and the first and second layer are joined to each other to form th... | 09/29/1998 |
| 5710447 | Solid state image device having a transparent Schottky electrode Disclosed is a solid state image device which has a plurality of photosensitive units which are disposed in parallel with each other and each of which includes a row of a plurality of photosensitive devices each of which includes a first N(or P)-type impu... | 01/20/1998 |
| 5685919 | Method and device for improved photoelectric conversion Efficiency of a photoelectric conversion device is increased by inducing a surface plasmon also on a metallic electrode located on the side of the device where light is incident. Incident He-Ne laser light is refracted by a semicylindrical lens and is inc... | 11/11/1997 |
| 5661328 | Photo-receiving device, and method of fabricating a photo-device A high-speed, high-sensitivity photo-receiving device has a light-absorbing substrate, on which a pair of electrodes are provided. An insulative optical guide is located over an exposed surface portion of the substrate constituting an optical window. The ... | 08/26/1997 |
| 5652435 | Vertical structure schottky diode optical detector A vertical structure Schottky contact photodiode has a narrow bandgap InGaAs light absorbing layer cladded front and back with InAlAs current blocking layers having metal contacts formed thereon. As compared to single-side MSM photodiodes, with interdigit... | 07/29/1997 |
| 5648297 | Long-wavelength PTSI infrared detectors and method of fabrication thereof Extended cutoff wavelengths of PtSi Schottky infrared detectors in the long wavelength infrared (LWIR) regime have been demonstrated for the first time. This result was achieved by incorporating a 1-nm-thick p+ doping spike at the PtSi/Si interface. The e... | 07/15/1997 |
| 5639673 | Transparent ohmic contacts for Schottky diode optical detectors on thin and inverted epitaxial layers An InP buffer layer is first formed upon an InP substrate; a thin layer of heavily doped InGaAs, a thick layer of light absorbing InGaAs, and a thin layer of InAlAs are thereafter sequentially grown upon the InP buffer layer. A light reflective Schottky b... | 06/17/1997 |
| 5631489 | Optoelectronic device An optoelectronic device based on a conduction constriction through which charge carriers pass ballistically. The constriction has a cross-sectional area of 2 square microns or less and a thickness D and is made of doped semiconductor material with a carr... | 05/20/1997 |
| 5608230 | Strained superlattice semiconductor photodetector having a side contact structure There is provided an MSM type semiconductor photodetector having a strained superlattice structure that shows a high responsiveness and, at the same time, a reduced dark current. Such a strained superlattice semiconductor photodetector comprising semicond... | 03/04/1997 |
| 5598016 | Back-illuminated type photoelectric conversion device Disclosed is a photoelectric conversion device in which a photodiode capacitance is increased. A transparent electrode is formed between a reflecting plate and a photodiode constituting a unitary picture element of a CCD image sensor. It is so formed that... | 01/28/1997 |
| 5589688 | Infrared radiation sensor An infrared radiation sensor of high accuracy is provided which is suitable for a thermometer to be used for effecting noncontacting determination of a temperature of a subject under test, particularly a temperature of a tympanic membrane, by utilizing th... | 12/31/1996 |
| 5576559 | Heterojunction electron transfer device A smooth and monotonic potential energy gradient was established at a p-type (InGa)As--undopad InP heterojunction to efficiently transfer conduction electrons from the (InGa)As:p layer to the InP:ø layer. This potential energy gradient was established wi... | 11/19/1996 |
| 5572043 | Schottky junction device having a Schottky junction of a semiconductor and a metal To provide a Schottky junction device having a super-lattice arranged in the Schottky interface in order to secure a high Schottky barrier and at the same time showing a high speed response by resolving the phenomenon of piled-up holes at the upper edge o... | 11/05/1996 |
| 5565676 | Method of driving photoelectric conversion device Disclosed is a photoelectric conversion device in which a photodiode capacitance is increased. A transparent electrode is formed between a reflecting plate and a photodiode constituting a unitary picture element of a CCD image sensor. It is so formed that... | 10/15/1996 |
| 5488231 | Metal/semiconductor junction Schottky diode optical device using a distortion grown layer A metal/semiconductor junction Schottky diode optical device using a distortion grown layer is described. A plurality of GaAs mirror and AlAs mirror layers are periodically grown on a semi-insulating GaAs substrate. An n+ or p+ semiconductor layer is form... | 01/30/1996 |
| 5478757 | Method for manufacturing photodetector using a porous layer The present invention is related to a method for manufacturing a photodetector which comprises steps of: (a) preparing a substrate having a back surface; (b) applying a first metal layer on the back surface; (c) annealing the substrate coated with the fir... | 12/26/1995 |
| 5449924 | Photodiode having a Schottky barrier formed on the lower metallic electrode A photodiode capable of obtaining a sufficient photo current/dark ratio at both a forward bias state and a reverse bias state. The photodiode includes a glass substrate, an aluminum film formed as a lower electrode over the glass substrate, an alumina fil... | 09/12/1995 |
| 5432374 | Integrated IR and mm-wave detector An integrated radiation detector (10) includes a substrate (12) having a first region (14) comprised of Group III-V semiconductor material, such as GaAs, formed over a first surface, and a second region (26) comprised of Group II-VI semiconductor material... | 07/11/1995 |
| 5420452 | Solid state radiation detector A radiation detection device includes a plurality of pixels, each pixel includes a thin film transistor and a photodiode conductively connected to a gate of the thin film transistor with the photodiode generating a current when the pixel is exposed to x-r... | 05/30/1995 |
