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| Number | Title | Issue Date |
| 7368750 | Semiconductor light-receiving device A semiconductor light-receiving device includes: a semi-insulating substrate; a semiconductor layer of a first conduction type that is formed on the semi-insulating substrate; a buffer layer of the first conduction type that is formed on the semi-insulating substrat... | 05/06/2008 |
| 7348607 | Planar avalanche photodiode The present invention includes a planar avalanche photodiode having a first n-type semiconductor layer defining a planar contact area, and a second n-type semiconductor layer having a p-type diffusion region. Further features of the structure includes an n-type semi... | 03/25/2008 |
| 7348608 | Planar avalanche photodiode A planar avalanche photodiode includes a small localized contact layer on the top of the device produced by either a diffusion or etching process and a semiconductor layer defining a lower contact area. A semiconductor multiplication layer is positioned between the ... | 03/25/2008 |
| 7268339 | Large area semiconductor detector with internal gain A method is provided for forming a semiconductor-detection device that provides internal gain. The method includes forming a plurality of bottom trenches in a bottom surface of an n-doped semiconductor wafer; and forming a second plurality of top trenches in a top s... | 09/11/2007 |
| 7145208 | MOS transistor having a work-function-dominating layer A MOS transistor including a substrate, a gate dielectric layer on the substrate, a stacked gate on the gate dielectric layer, and a source/drain in the substrate beside the stacked gate is provided. In particular, the stacked gate includes, from bottom to top, a fi... | 12/05/2006 |
| 6683294 | Avalanche photo-diodes The present invention provides an avalanche photo-diode detector arrangement comprising two avalanche photo-iodes, which are each reverse biased to just below their breakdown voltage, are arranged back-to-back and are arranged in series with an oscillatin... | 01/27/2004 |
| 6664573 | Avalanche photodiode An avalanche photodiode capable of generating a minimal surface leakage current as well as achieving a uniform electrical field. The avalanche photodiode includes a semiconductor substrate provided with a lower electrode underneath it, an amplification la... | 12/16/2003 |
| 6614086 | Avalanche photodetector There is disclosed a photodetector having two or more avalanche-gain layered structures and multi-terminals. The avalanche photodetector includes an emitter light absorption layer structure located between a collector layer and an emitter layer (top conta... | 09/02/2003 |
| 6489232 | ESD resistant device A semiconductor device such as a photodetector has a substrate having an active region layer containing an active region of the device. A dielectric layer is disposed on the active region layer, and a metal active region contact is disposed in the dielect... | 12/03/2002 |
| 6229162 | Planar-type avalanche photodiode With the object of providing a high-speed high-sensitivity planar-type avalanche photodiode (APD) that has high reliability, great manufacturing tolerance and a wide dynamic range, there is presented a planar-type avalanche photodiode, having on a semicon... | 05/08/2001 |
| 6222209 | Wide wavelength range high efficiency avalanche light detector with negative feedback A novel use of a solid state light detector with a low impedance substrate is described. Light that enters the substrate after traversing the antireflective layer creates an electron-hole pair. The electrons are collected in a crystalline epitaxial layer ... | 04/24/2001 |
| 6163039 | Triangular-barrier optoelectronic switch A GaAs-InGaP triangular-barrier optoelectronic switch (TBOS) is disclosed, wherein two i-InGaP layers are formed on both sides of the p+ -GaAs layer in the conventional triangular-barrier structure. By introducing avalanche multiplication and c... | 12/19/2000 |
| 6136628 | Method for fabricating photodetector It has been pointed out that the avalanche breakdown voltage of a photodetector comprising an avalanche layer formed by selective epitaxial growth considerably fluctuates. A N+ --Si buried layer and a N--Si epitaxial layer 3 are successively fo... | 10/24/2000 |
| 6104047 | Avalanche photodiode with thin built-in depletion region The present invention relates to an avalanche photodiode having a simple structure, high reliability, and a high speed response on the order of Gbps. This photodiode is formed by depositing laminated layers on a semiconductor substrate in the order of an ... | 08/15/2000 |
| 6015721 | Method of manufacturing an avalanche photodiode A method of manufacturing an avalanche photodiode capable of effectively preventing edge breakdown is disclosed. First, so as to manufacture an avalanche photodiode an absorption layer, a grading layer, a charge sheet layer of a first conductivity type an... | 01/18/2000 |
| 5880490 | Semiconductor radiation detectors with intrinsic avalanche multiplication in self-limiting mode of operation The disclosed invention includes an apparatus and method for detecting radiation in a detector. The radiation to be detected ionizes the atoms in the intrinsic silicon lattice of the detector to produce a small signal of freed elections. The small signal ... | 03/09/1999 |
| 5844291 | Wide wavelength range high efficiency avalanche light detector with negative feedback A novel use of a solid state light detector with a low impedance substrate is described. Light that enters the substrate after traversing the antireflective layer creates an electron-hole pair. The electrons are collected in a crystalline epitaxial layer ... | 12/01/1998 |
| 5818322 | Silicon photosensitive element A groove is formed on the surface of a silicon substrate by way of etching. A silicon device for a driver of a photosensitive element is formed on the surface of the substrate where the groove is not formed. With the groove, a super lattice structure of S... | 10/06/1998 |
| 5763903 | Avalanche photodiode for light detection An avalanche photodiode for detecting x-rays and other radiation comprises a first substrate having a portion removed therefrom, a first insulating film formed on the first substrate, a second substrate comprising a floating zone silicon semiconductor sub... | 06/09/1998 |
| 5744850 | Photoelectric conversion semiconductor device A novel photoelectric conversion semiconductor device having an amplifying function which can be readily fabricated is provided. An N+ -type impurity domain whose impurity concentration is higher than that of an N- -type semiconducto... | 04/28/1998 |
| 5719414 | Photoelectric conversion semiconductor device with insulation film A photoelectric conversion semiconductor device is characterized in that a second conductivity type impurity region is formed in a first conductivity type semiconductor substrate, the second conductivity type impurity region having a depth of 0.1 μm or l... | 02/17/1998 |
| 5670383 | Method for fabrication of deep-diffused avalanche photodiode A method of forming a planar semiconductor device, such as an array of APDs, includes the steps of doping a substantially planar block of n type semiconductor material with a p type dopant in accordance with a selected pattern to form a plurality of n typ... | 09/23/1997 |
| 5656835 | Solid state imager and its driving method A very high sensitive solid state imager is realized by employing a multiplication process which includes avalanche multiplication of charges as generated by an incident light at each of several optical to electrical converting components (hereafter refer... | 08/12/1997 |
| 5596186 | High sensitivity silicon avalanche photodiode A silicon avalanche photodiode for ultraviolet light detection having a p+ -layer, an n-layer, an n- -layer and an n+ -silicon substrate in the order from the entrance side of the ultraviolet light, wherein the p+ | 01/21/1997 |
| 5583352 | Low-noise, reach-through, avalanche photodiodes A new reach-through APD structure which includes a five-layer, double-drift-region, double-junction device, having a p+ -p-n-p- -n+ structure. The middle three layers of the new APD constitute most of the thickness of the ... | 12/10/1996 |
| 5554882 | Integrated trigger injector for avalanche semiconductor switch devices An avalanche semiconductor switch device utilizes trigger input. The integrated trigger input is a charge carrier injector which injects charge carriers directly into the avalanche semiconductor switch device. The avalanche semiconductor switch device inc... | 09/10/1996 |
| 5548112 | Photodetecting circuit using avalanche photodiode A photodetecting circuit using an avalanche photodiode of the present invention has an avalanche photodiode, and a bias control means for applying a bias voltage to the avalanche photodiode to drive the avalanche photodiode at a high multiplication factor... | 08/20/1996 |
| 5500376 | Method for fabricating planar avalanche photodiode array A method of forming a planar photosensitive device, such as an array of APDs, includes the steps of doping a substantially planar block of n type semiconductor material with a p type dopant in accordance with a selected pattern to form a plurality of p ty... | 03/19/1996 |
| 5446308 | Deep-diffused planar avalanche photodiode A method of forming a planar semiconductor device, such as an array of APDs, includes the steps of doping a substantially planar block of n type semiconductor material with a p type dopant in accordance with a selected pattern to form a plurality of n typ... | 08/29/1995 |
| 5444280 | Photodetector comprising avalanche photosensing layer and interline CCD readout layer The disclosed device and system enables the cell-based amplification of photo-e The disclop41 The detection device is realized by overlaying an amplifying semi-conductor structure, generally referred to as avalanche photo-diodes, on top of a typical prior... | 08/22/1995 |
| 5438217 | Planar avalanche photodiode array with sidewall segment A planar photosensitive device, such as an array of APDs, includes a planar block of n type semiconductor material having a plurality of p type wells in the block surrounded by a foundation of n type semiconductor material. Each p type well corresponds to... | 08/01/1995 |
| 5311044 | Avalanche photomultiplier tube A small, rugged photomultiplier tube is achieved by closely spacing a large area avalanche "photodetector" with respect to a photocathode in an opaque casing having a window for incident light. The photocathode and the avalanche photodetector have compara... | 05/10/1994 |
| 5288989 | Avalanche photodiode with moisture resistant passivation coating disposed to cover the outer periphery of the photodiode body except at a selected top contact area An avalanche photodiode (APD) has a two tier passivation layer disposed over the silicon APD body. The passivation layer includes an inorganic moisture barrier layer and an organic dielectric layer. The inorganic material forming this layer is preferably ... | 02/22/1994 |
| 5233265 | Photoconductive imaging apparatus A photoconductive device having a photoconductive layer which includes an amorphous semiconductor layer capable of charge multiplication in at least a part thereof is disclosed. The method of operating such a photoconductive device is also disclosed. By u... | 08/03/1993 |
| 5233209 | Guard ring structure with graded Be implantation An avalanche photodiode having a beryllium guard ring. The beryllium is implanted at a dosage of at least 5×1014 per cm2 and subsequently annealed to provide a guard ring profile with a p+core and a superlinearly graded tail. The do... | 08/03/1993 |
| 5204520 | Avalanche photodiode array integrated with etched silicon divider An avalanche photodiode array comprising a plurality of photosensitive regions in a light sensitive body with each photosensitive region having a semiconductor junction. Between said photosensitive regions, there are a plurality of low response regions se... | 04/20/1993 |
| 5148251 | Photoconductive avalanche GaAs switch An optically activated avalanche GaAs switch having two opposing optical windows for receiving optical energy from an illumination source which may be, for example, a laser diode operating at a 1.06 micron wavelength. The switch is a semiconductor PIN str... | 09/15/1992 |
| 5146296 | Devices for detecting and/or imaging single photoelectron A wafer of neutron transmutation doped silicon having a p-n junction between extended opposite surfaces is formed with bevelled edges. A single or plurality of reverse biased signal contacts is disposed on one surface to provide a single or integrated arr... | 09/08/1992 |
| 5114866 | Fabricating an avalanche photo diode having a step-like distribution Disclosed is a preferable method for producing an avalanche photo diode in which an impurity-doped region having a relatively high concentration and a step-like distribution has a step portion in another impurity-doped region having a relatively low conce... | 05/19/1992 |
| 5057892 | Light responsive avalanche diode Large area semiconductor photodiodes are made free of microcracks by forming on the incident light surface of the device a ring-shaped electrode structure. The electrode structure adds rigidity to the device when the edge surface of the device is later be... | 10/15/1991 |
