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| Number | Title | Issue Date |
| 7358579 | Reducing the actuation voltage of microelectromechanical system switches A microelectromechanical system switch may include a relatively stiff cantilevered beam coupled, on its free end, to a more compliant or flexible extension. A contact may be positioned at the free end of the cantilevered beam. The extension reduces the actuation vol... | 04/15/2008 |
| 7339218 | Semiconductor memory device and method of manufacturing the same A semiconductor memory device includes a semiconductor substrate having a first region and a second region, a transistor placed in the first region of the semiconductor substrate, a first insulating film formed on the semiconductor substrate in the first and second ... | 03/04/2008 |
| 7323750 | Bipolar transistor and semiconductor device using same A bipolar transistor is provided, which is low in collector-to-emitter saturation voltage, small in size and to be manufactured by a reduced number of processes, and a semiconductor device formed with such a bipolar transistor and a MOS transistor on a same substrat... | 01/29/2008 |
| 7217591 | Method and process intermediate for electrostatic discharge protection in flat panel imaging detectors Shorting bars are provided for electrostatic discharge protection as a portion of trace deposition in a photodiode array. During normal processing for etching of the metal layers, the shorting bars are removed without additional processing requirements. Additional s... | 05/15/2007 |
| 7145172 | Thin film transistor array substrate A thin film transistor array substrate of a thin film transistor liquid crystal display (TFT-LCD) is provided. The gate dielectric layer of the TFT includes a silicon nitride layer, a dielectric layer and a silicon nitride layer, and the etching selectivity of the a... | 12/05/2006 |
| 6503771 | Semiconductor photoelectrically sensitive device A semiconductor device including a conductive substrate or a first conductive layer formed on the substrate, a non-single-crystal semiconductor layer member is disposed on the conductive substrate or the conductive layer, the non-single-crystal semiconduc... | 01/07/2003 |
| 6300648 | Continuous amorphous silicon layer sensors using sealed metal back contact A method and apparatus for reducing vertical leakage current in a high fill factor sensor array is described. Reduction of vertical leakage current is achieved by eliminating Schottky junction interfaces that occur between metal back contacts and intrinsi... | 10/09/2001 |
| 6271055 | Process for manufacturing semiconductor element using non-monocrystalline semiconductor layers of first and second conductivity types and amorphous and microcrystalline I-type semiconductor layers A process for forming a deposited film, a process for manufacturing a semiconductor element and a process for manufacturing a photoelectric conversion element are disclosed which each comprises a step of forming a first conductivity type semiconductor lay... | 08/07/2001 |
| 6262421 | Solid state radiation detector for x-ray imaging A solid state radiation detector for medical imaging incorporates an array of transistors and a continuous radiation detecting layer positioned over the transistors and electrically coupled to the transistors. The transistors may reside on a plurality of ... | 07/17/2001 |
| 6169284 | System of infrared radiation detection based on sensors of amorphous silicon and its alloys A system for the detection of infrared light (IR with wavelength λ>800 nm) of high sensitivity. It is based on the measurement of the capacitance in structures made of amorphous silicon, constituted of a junction having two electrodes connecting to outsi... | 01/02/2001 |
| 6054747 | Integrated photoreceiver having metal-insulator-semiconductor switch An integrated photoreceiver is provided. The photoreceiver includes a substrate, a metal-insulator-semiconductor switch (MISS) formed on a first portion of the substrate, and a photoreceiving structure formed on a second portion of the substrate for recei... | 04/25/2000 |
| 6016011 | Method and apparatus for a dual-inlaid damascene contact to sensor A dual-inlaid damascene contact having a polished surface for directly communicating an electrically conductive layer to a semiconductor layer. A dielectric layer is formed on the electrically conductive layer. A dual-inlaid cavity is formed by etching a ... | 01/18/2000 |
| 5998806 | Three-color sensor with a pin or nip series of layers A pin or nip layer sequence, especially for use as a color sensor in electrooptical components. The bond gap of a first intrinsic (i) layer closer to the light input side is greater than the bond gap of a second i layer adjacent to the first and further r... | 12/07/1999 |
| 5942756 | Radiation detector and fabrication method A solid state radiation detector provides a plurality of modules disposed adjacent one another in a two-dimensional array. Each of the modules includes an array of thin film transistors. A continuous radiation detecting layer, such as a photoconductor lay... | 08/24/1999 |
| 5873003 | Sight line detector, display unit, view finder and unit and camera with the same display unit There is provided a liquid crystal unit having an on-chip photodetector. On a transparent substrate are laid down a metallic wiring, an n-type a-Si, an a-SiGe, and a p-type a-Si successively, an insulating film is formed, and then a transparent electrode is fo... | 02/16/1999 |
| 5844292 | Photosensitive structure hardened to hard electromagnetic radiation and its application to video cameras A photosensitive device, e.g. for use as an optical sensor for a video camera, is designed to capture light and to deliver an electrical signal representative of the captured light, and presenting a resistance to hard electromagnetic radiation. The device... | 12/01/1998 |
| 5796153 | Variable-response x-ray detection assemblies and methods of using same Variable-response photodetectors adapted to compensate for nonuniformity along an axis of a scintillating crystal by means of multi-element photodiodes and systems for selectively activating different photodiode sub-elements are disclosed, together with a... | 08/18/1998 |
| 5790255 | Transparent light beam detectors A system of partially transparent light beam detectors that allow passage of the light beam through the detector allows multiple detectors that use the same reference light beam. Transparent detectors can be position sensitive detectors (PSD), photodiode ... | 08/04/1998 |
| 5739065 | Method of fabricating a highly sensitive photo sensor A structure of and a method for fabricating a highly sensitive photo sensor. Its structural feature is that a PIN photo diode is allocated in a MOSFET, by means of enlarging the detected small photo current from PIN photo diode by the MOSFET; so as to avo... | 04/14/1998 |
| 5682037 | Thin film detector of ultraviolet radiation, with high spectral selectivity option Thin film detector of ultraviolet radiation with high spectral selectivity option, and a structure placed between two electrodes, formed by the superposition of semiconductor thin films such as hydrogenated amorphous silicon and its alloys with carbon. Th... | 10/28/1997 |
| 5587611 | Coplanar X-ray photodiode assemblies A coplanar photodiode construction is disclosed having particular utility in X-ray detection applications in which alternating P-doped and N-doped regions, separated by undoped material, are located in relatively shallow depth under and along the surface ... | 12/24/1996 |
| 5585280 | Method of fabricating solid state radiation imager with high integrity barrier layer A radiation imager includes a photosensor barrier layer disposed between an amorphous silicon photosensor array and the scintillator. The barrier layer includes two strata, the first stratum being silicon oxide disposed over the upper conductive layer of ... | 12/17/1996 |
| 5556794 | Method of manufacturing a semiconductor device having low sodium concentration A method of manufacturing a semiconductor device having a non-single crystalline semiconductor layer including an intrinsic silicon which contains hydrogen or halogen and is formed on a substrate by a vapor phase reaction in a reaction chamber which may h... | 09/17/1996 |
| 5557133 | Voltage-controlled variable spectrum photodetector for 2D color image detection and reconstruction applications Variable spectrum photodetector allowing the detection of the three main colors of the visible spectrum (red, green and blue) by varying the bias voltage by a few volts around zero. It is built using known thin-film technology and is externally connected ... | 09/17/1996 |
| 5521400 | Semiconductor photoelectrically sensitive device with low sodium concentration A semiconductor device including a conductive substrate or a first conductive layer formed on the substrate, a non-single-crystal semiconductor layer member is disposed on the conductive substrate or the conductive layer, the non-single-crystal semiconduc... | 05/28/1996 |
| 5463225 | Solid state radiation imager with high integrity barrier layer and method of fabricating A radiation imager includes a photosensor barrier layer disposed between an amorphous silicon photosensor array and the scintillator. The barrier layer includes two strata, the first stratum being silicon oxide disposed over the upper conductive layer of ... | 10/31/1995 |
| 5456762 | Photoelectric conversion elements The present invention provides photoelectric conversion elements, wherein the long wavelength sensitivity, the fill factor, and the photoelectric conversion efficiency are improved. In order to provide photoelectric conversion elements wherein light deter... | 10/10/1995 |
| 5442198 | Non-single crystal semiconductor device with sub-micron grain size A MOS-FET transistor is produced on a substrate made of glass which has a non single crystal semiconductor film (2'). The average diameter of a crystal grain in said film is in the range between 0.5 times and 4 times of thickness of said film, and said av... | 08/15/1995 |
| 5414275 | Photoelectric converting device and image processing apparatus utilizing the same A photoelectric converting device with PIN structure includes an amorphous I-type semiconductor layer and charge injection blocking layers positioned to sandwich the I-type layer. At least one of the charge injection blocking layers comprises an amorphous... | 05/09/1995 |
| 5391893 | Nonsingle crystal semiconductor and a semiconductor device using such semiconductor A semiconductor device including a conductive substrate or a first conductive layer formed on the substrate, a non-single-crystal semiconductor layer member is disposed on the conductive substrate or the conductive layer, the non-single-crystal semiconduc... | 02/21/1995 |
| 5370972 | Amorphous silicon photodiode with sloped sidewalls and method of fabrication Solid state photodetectors having amorphous silicon photodiode bodies with sloped sidewalls allowing for deposition of high integrity conformal layers thereover are produced by etching the amorphous silicon in a mostly anisotropic etchant in a reactive io... | 12/06/1994 |
| 5344499 | Electric device of hydrogenated amorphous silicon and method of manufacture The electro-migration of electrode metal takes place under an elevated temperature condition in amorphous silicon devices having conventional PI-type, NI-type, or PIN-type hydrogenated amorphous silicon layered structures, which substantially degrades the... | 09/06/1994 |
| 5298455 | Method for producing a non-single crystal semiconductor device A MOS-FET transistor is produced on a substrate made of glass which has a non single crystal semiconductor film (2'). The average diameter of a crystal grain in said film is in the range between 0.5 times and 4 times of thickness of said film, and said av... | 03/29/1994 |
| 5264077 | Method for producing a conductive oxide pattern A conductive oxide film is formed on a substrate at a low temperature. The formed conductive oxide film is not very dense because of the low temperature. Therefore the formed conductive oxide film can easily be etched by an etchant having a weak etching c... | 11/23/1993 |
| 5233181 | Photosensitive element with two layer passivation coating A photosensitive element has a two tier passivation layer disposed between the top contact layer and the amorphous silicon photosensor island. The passivation layer includes an inorganic moisture barrier layer which is disposed at least over the sidewalls... | 08/03/1993 |
| 5191394 | Amorphous silicon photodiode with sloped sidewalls and method of fabrication Solid state photodetectors having amorphous silicon photodiode bodies with sloped sidewalls allowing for deposition of high integrity conformal layers thereover are produced by etching the amorphous silicon in a mostly anisotropic etchant in a reactive io... | 03/02/1993 |
| 5164322 | Method for manufacturing photoelectric conversion device with a high response speed An improved photoelectric conversion device is shown. The device includes a plurality of photoelectric semiconductor elements each of which are composed of a first electrode and a semiconductor layer and a second electrode. The opposed surfaces of semicon... | 11/17/1992 |
| 5134081 | Image sensor free from undesirable incident light rays and a manufacturing method for the same An improved image sensor is described. The image sensor is produced with a light window by removing a portion of a photosensitive laminate structure by projection of a laser beam. The laminate structure comprises a light blocking electrode, a semiconducto... | 07/28/1992 |
| 5131954 | Monolithic solar cell array and method for its manufacturing Large area, thin-film body of photovoltaic material is subdivided into a plurality of small area devices. Through a selective etching process, a portion of the bottom electrode of each small area device is exposed. A metallic contact member is deposited u... | 07/21/1992 |
| 5126815 | Position sensor and picture image input device A semiconductor light beam position sensor element comprises a semiconductor layer of successively formed p-, i- and n-type semiconductor layers and an electrically conductive layer on either side of the semiconductive layer. At least one of the conductiv... | 06/30/1992 |
