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| Number | Title | Issue Date |
| 7368750 | Semiconductor light-receiving device A semiconductor light-receiving device includes: a semi-insulating substrate; a semiconductor layer of a first conduction type that is formed on the semi-insulating substrate; a buffer layer of the first conduction type that is formed on the semi-insulating substrat... | 05/06/2008 |
| 7352044 | Photoelectric transducer, photoelectric transducer apparatus, and iron silicide film A solar battery 10 comprises a metal electrode layer 12, a pin junction 100, and a transparent electrode layer 16 which are successively laminated on a substrate 11 such as a silicon substrate. The pin junction 100 comprises... | 04/01/2008 |
| 7329895 | Dual wavelength detector A sensor comprises two photodiodes sensitive to different wavelengths. The photodiodes or detectors are stacked in a vertical relationship to each other. A bandpass filter is provided to limit the wavelengths of light reaching the detectors. The photodiodes are form... | 02/12/2008 |
| 7205641 | Polydiode structure for photo diode An integrated circuit device for converting an incident optical signal into an electrical signal comprises a semiconductor substrate, a well region formed inside the semiconductor substrate, a dielectric layer formed over the well region, and a layer of polysilicon ... | 04/17/2007 |
| 7202102 | Doped absorption for enhanced responsivity for high speed photodiodes A photodiode with a semiconductor intrinsic light absorption layer has at least one p-doped light absorption layer or an n-doped light absorption layer, and preferably both. The diode also has a cathode electrode and an anode electrode electrically coupled with the ... | 04/10/2007 |
| 7138697 | Structure for and method of fabricating a high-speed CMOS-compatible Ge-on-insulator photodetector The invention addresses the problem of creating a high-speed, high-efficiency photodetector that is compatible with Si CMOS technology. The structure consists of a Ge absorbing layer on a thin SOI substrate, and utilizes isolation regions, alternating n- and p-type ... | 11/21/2006 |
| 6690078 | Shielded planar dielectrically isolated high speed pin photodiode and method for producing same A PIN photodiode and method for forming the PIN photodiode are shown where an intrinsic layer of the photodiode can be made arbitrarily thin and a second active region of the photodiode substantially shields a first active region of the photodiode. A fabr... | 02/10/2004 |
| 6689667 | Photoreceiver of selectively detecting light of a specific wavelength and the method of manufacturing the same The present invention relates to a photoreceiver and method of manufacturing the same. For the purpose of a selective detection of a specific wavelength, if a waveguide type photodetector using a multiple quantum-well layer having a quantum confined stark... | 02/10/2004 |
| 6597023 | Semiconductor light-detecting element A semiconductor light-detecting element includes a given substrate, an underlayer and a light-detecting element structure which are formed on said substrate in turn. The underlayer is made of a nitride semiconductor including Al element with a dislocation... | 07/22/2003 |
| 6548878 | Method for producing a thin distributed photodiode structure A method is shown for producing a distributed PN photodiode having a first active region of the photodiode that can be made arbitrarily thin. A fabrication substrate is doped to have a first conductivity type in order to form the first active region of th... | 04/15/2003 |
| 6495894 | Photonic device, a substrate for fabricating a photonic device, a method for fabricating the photonic device and a method for manufacturing the photonic device-fabricating substrate A buffer layer with a composition of AlaGabIncN (a+b+c=1, a, b, cࣙ0) and a multilayered thin films with a composition of AlxGayInzN (x+y+z=1, x, y, zࣙ0) are formed in turn on a substrate. The Al component of the Al component-minimum portion of the buf... | 12/17/2002 |
| 6489232 | ESD resistant device A semiconductor device such as a photodetector has a substrate having an active region layer containing an active region of the device. A dielectric layer is disposed on the active region layer, and a metal active region contact is disposed in the dielect... | 12/03/2002 |
| 6485998 | Linear pin photodiode An improved PIN photodiode provides enhanced linearity by confining the light absorption region of the diode wholly within the depletion region. The photodiode exhibits improved linearity over prior art designs because the thickness of the absorption regi... | 11/26/2002 |
| 6458619 | Process for producing an isolated planar high speed pin photodiode with improved capacitance A method is shown for producing a PIN photodiode having low parasitic capacitance and wherein an intrinsic layer of the photodiode can be made arbitrarily thin. A fabrication substrate is lightly doped to have a first conductivity type in order to form th... | 10/01/2002 |
| 6451702 | Methods for forming lateral trench optical detectors A method for forming an optical detector device on a semiconductor substrate. The method includes forming a first set and a second set of trenches in the substrate, wherein trenches of the first set are alternately disposed with respect to trenches of the... | 09/17/2002 |
| 6384459 | Semiconductor device and method for producing the same A photo-detecting device includes: a semiconductor substrate; a multilayer structure formed on the semiconductor substrate; an island-like photo-detecting region formed in at least a portion of the multilayer structure, the island-like photo-detecting reg... | 05/07/2002 |
| 6326649 | Pin photodiode having a wide bandwidth A PIN photodiode comprising a p region containing a p type dopant, an n region containing an n type dopant, an i region positioned intermediate the p region and the n region, and a relatively thick, undoped buffer region positioned between the n region an... | 12/04/2001 |
| 6303967 | Process for producing an isolated planar high speed pin photodiode A method is shown for producing a PIN photodiode using a reduced number of masks wherein an intrinsic layer of the photodiode can be made arbitrarily thin. A fabrication substrate is lightly doped to have a first conductivity type in order to form the int... | 10/16/2001 |
| 6262465 | Highly-doped P-type contact for high-speed, front-side illuminated photodiode A semiconductor p-i-n photodiode having a substrate, an n layer coupled to the surface of said substrate, an i layer coupled to the surface of said n layer, and a carbon doped p layer coupled to the surface of said i layer.... | 07/17/2001 |
| 6255708 | Semiconductor P-I-N detector A semiconductor P-I-N detector including an intrinsic wafer, a P-doped layer, an N-doped layer, and a boundary layer for reducing the diffusion of dopants into the intrinsic wafer. The boundary layer is positioned between one of the doped regions and the ... | 07/03/2001 |
| 6225672 | High-gain and high-temperature applicable phototransistor with multiple mono-crystalline silicon-carbide layers on a silicon substrate The present invention relates to the structure and fabrication process of a high-gain monocrystal Silicon Carbide phototransistor applicable at high temperature. In view of the optical gain and applicable temperature of the conventional n-p-n type Silicon... | 05/01/2001 |
| 6191465 | Solid state radiation detector A radiation detection structural principle for improved detection wherein absorbtion members of high density and bandgap semiconductor material and meeting all efficiency limiting requirements are provided with a sweeping field applied across each member.... | 02/20/2001 |
| 6177289 | Lateral trench optical detectors A monolithic semiconductor optical detector is formed on a substrate having a plurality of substantially parallel trenches etched therein. The trenches are further formed as a plurality of alternating N-type and P-type trench regions separated by pillar r... | 01/23/2001 |
| 6175142 | Pin photodiode A PIN photodiode comprising a P-type layer, an N-type layer, and an I-type layer provided between said, P-type layer and said N-type layer, wherein a junction surface between said I-type layer and said N-type layer is formed by joining a high specific res... | 01/16/2001 |
| 6153921 | Diode device Disclosed is a diode device in which two electrodes of regions forming both terminals are provided on the same face, thereby enabling the device to be connected to a circuit substrate by face-down bonding. Since a region is located within the semiconducto... | 11/28/2000 |
| 6130466 | Semiconductor heterostructure radiation detector having two spectral sensitivity ranges A semiconductor heterostructure radiation detector has two adjacent semicuctor layer regions sensitive in different spectral ranges, in which photons having different energies respectively can be absorbed, optically exciting charge carriers present there... | 10/10/2000 |
| 6111305 | P-I-N semiconductor photodetector A semiconductor photodetector includes a SOI substrate; a p-i-n photodiode provided on the SOI substrate, the p-i-n photodiode having an i-type semiconductor region; an insulator film provided on the i-type semiconductor region; and a depleting electrode ... | 08/29/2000 |
| 6081020 | Linear PIN photodiode An improved PIN photodiode provides enhanced linearity by confining the light absorption region of the diode wholly within the depletion region. The photodiode exhibits improved linearity over prior art designs because the thickness of the absorption regi... | 06/27/2000 |
| 6075275 | Planar dielectrically isolated high speed photodiode A method is shown for producing a PIN photodiode wherein an intrinsic layer of the photodiode can be made arbitrarily thin. A fabrication substrate is lightly doped to have a first conductivity type in order to form the intrinsic layer of the photodiode. ... | 06/13/2000 |
| 6049638 | Photodetector module A photodetector module including a support substrate having a main surface, an optical waveguide mounted on the support substrate and having an end face for emerging a light beam along a first optical path, and a photodetector mounted on the support subst... | 04/11/2000 |
| 6027956 | Process for producing planar dielectrically isolated high speed pin photodiode A method is shown for producing a PIN photodiode wherein an intrinsic layer of the photodiode can be made arbitrarily thin. A fabrication substrate is lightly doped to have a first conductivity type in order to form the intrinsic layer of the photodiode. ... | 02/22/2000 |
| 6002142 | Integrated optoelectronic structures incorporating P-type and N-type layer disordered regions Novel semiconductor devices are monolithically defined with p-type and/or n-type wide bandgap material formed by impurity induced layer disordering of selected regions of multiple semiconductor layers. The devices are beneficially fabricated by simultaneo... | 12/14/1999 |
| 5880489 | Semiconductor photodetector A semiconductor device includes a laminated layer structure including at least one semiconductor layer disposed on a first conductivity type semiconductor substrate, a semi-insulating semiconductor layer disposed on the semiconductor laminated layer struc... | 03/09/1999 |
| 5872016 | Process of making an optoelectronic devices utilizing multiple quantum well pin structures Optoelectronic devices such as photodetectors, modulators and lasers with improved optical properties are provided with an atomically smooth transition between the buried conductive layer and quantum-well-diode-containing intrinsic region of a p-i-n struc... | 02/16/1999 |
| 5825047 | Optical semiconductor device An optical semiconductor device comprises a stripe-mesa structure provided on a semi-insulating substrate. The stripe-mesa structure comprises an undoped light absorption layer sandwiched by cladding layers, and by burying layers on both sides. With this ... | 10/20/1998 |
| 5818096 | Pin photodiode with improved frequency response and saturation output A pin photodiode having a structure capable improving the frequency response and the saturation output while maintaining the effective internal quantum efficiency and CR time constant. A pin photodiode is formed by: a first semiconductor layer in a first ... | 10/06/1998 |
| 5818322 | Silicon photosensitive element A groove is formed on the surface of a silicon substrate by way of etching. A silicon device for a driver of a photosensitive element is formed on the surface of the substrate where the groove is not formed. With the groove, a super lattice structure of S... | 10/06/1998 |
| 5789765 | Photo diode providing high-linearity signal current in response to light receiving signal A photo diode in which an optical absorption layer and a p-type semiconductor layer neighboring on each other are designed to be at almost the same valence band level (their offset not exceeding 0.05 eV). Preferably the optical absorption layer is a GaInA... | 08/04/1998 |
| 5777318 | Smart pixel array using single diode for detection and modulation A smart pixel array is disclosed wherein a single optical beam can be used to transmit information to and from each subarea or cell of the pixel array. An optical P-I-N diode with an intrinsic MQW region is present in each subarea, and the optical beam is... | 07/07/1998 |
| 5719414 | Photoelectric conversion semiconductor device with insulation film A photoelectric conversion semiconductor device is characterized in that a second conductivity type impurity region is formed in a first conductivity type semiconductor substrate, the second conductivity type impurity region having a depth of 0.1 μm or l... | 02/17/1998 |
