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3M employee and church chorister Art Fry needed something to temporarily mark pages in his hymnal. He was in luck because his colleague, Spencer Silver, accidentally developed a glue that was too weak for other purposes. After initially discouraging consumer response, Post-it Notes became a hit in 1979.
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| Number | Title | Issue Date |
| 7309884 | Semiconductor light receiving device and method of fabricating the same A semiconductor light receiving device is disclosed which is capable of receiving a first wavelength band light beam and a second wavelength band light beam having a shorter wavelength than that of the first wavelength band light beam. The device has a light absorbi... | 12/18/2007 |
| 7307290 | Compound semiconductor wafer and manufacturing method thereof A compound semiconductor wafer providing an InGaAs light receiving layer having superior crystal characteristic suitable for a near-infrared sensor includes an InAsxP1-x graded buffer layer consisting of a plurality of layers positioned on an I... | 12/11/2007 |
| 7132677 | Super bright light emitting diode of nanorod array structure having InGaN quantum well and method for manufacturing the same An GaN light emitting diode (LED) having a nanorod (or, nanowire) structure is disclosed. The GaN LED employs GaN nanorods in which a n-type GaN nanorod, an InGaN quantum well and a p-type GaN nanorod are subsequently formed in a longitudinal direction by inserting ... | 11/07/2006 |
| 6696740 | Photodiode A photodiode that is used in an optical communication system using two different wavelengths, λ1 and λ2 (λ1 | 02/24/2004 |
| 6693337 | Semiconductor photodetection device A semiconductor photodetection device includes a semiconductor structure including an optical absorption layer having a photo-incidence surface on a first side thereof, a dielectric reflecting layer formed on a second side of the semiconductor structure o... | 02/17/2004 |
| 6683326 | Semiconductor photodiode and an optical receiver The present invention relates to a high-sensitivity top-electrode and bottom-illuminated type photodiode. The device consists of a highly doped buffer layer, a photo-detecting layer on a semi-insulating substrate. An electrode is formed on the conductive ... | 01/27/2004 |
| 6518638 | Photodiode A photodiode (A) comprises a substrate, a light receiving layer having a band gap wavelength and including a pn-junction and at least an absorption layer having a band gap wavelength λg. One of the absorption layers is sandwiched between the substrate an... | 02/11/2003 |
| 6501104 | High speed semiconductor photodetector A first semiconductor mesa structure having a photoactive region and a second semiconductor mesa structure are formed side by side on a semi-insulating substrate and surrounded with a photoresist layer. The mesa structures and the surrounding photoresist ... | 12/31/2002 |
| 6458614 | Opto-electronic integrated circuit An optical electronic integrated circuit comprises: a silicon substrate; an electronic circuit formed in the silicon substrate and processing an electric signal; a ZnO film formed on at least portion of the silicon substrate; and an optical circuit electr... | 10/01/2002 |
| 6452220 | Current isolating epitaxial buffer layers for high voltage photodiode array An array of photodiodes in series on a common semi-insulating substrate has a non-conductive buffer layer between the photodiodes and the semi-insulating substrate. The buffer layer reduces current injection leakage between the photodiodes of the array an... | 09/17/2002 |
| 6437415 | Photodiode and photodiode module Besides the central pn-junction and the central electrode, a PD chip has a peripheral pn-junction and a peripheral electrode which do not appear on the sides. The ends of the peripheral pn-junction are covered with a protection layer for preventing self-s... | 08/20/2002 |
| 6303968 | Semiconductor light-receiving element An ohmic electrode for electrically connecting a shielding metal film and a window layer is provided to a semiconductor light-receiving element in which stray light is controlled by the shielding metal film. In this semiconductor light-receiving element, ... | 10/16/2001 |
| 6228673 | Method of fabricating a surface coupled InGaAs photodetector A photodetector is fabricated in a multilayer structure having a semi-insulating InP substrate, an n+ InP contact layer overlying the InP substrate, an undoped InGaAs absorbing layer overlying the n+ InP contact layer, and a p+ doped InGaAs layer overlyin... | 05/08/2001 |
| 6222200 | Photodetector with spectrally extended responsivity A photodetector has an extended wavelength range combined with high responsivity and reliability. It includes an active region having alternating compressive and tensile strain layers arranged so that the total effective strain of the active region is bal... | 04/24/2001 |
| 6177686 | High power waveguide photodiode with an absorption layer with reduced absorption coefficient A photodiode for an input light signal comprising an absorption layer having an absorption coefficient which is less than the absorption coefficient of InGaAs when measured at a wavelength of 1.55 μm. First and a second cladding layer are disposed on opp... | 01/23/2001 |
| 6002142 | Integrated optoelectronic structures incorporating P-type and N-type layer disordered regions Novel semiconductor devices are monolithically defined with p-type and/or n-type wide bandgap material formed by impurity induced layer disordering of selected regions of multiple semiconductor layers. The devices are beneficially fabricated by simultaneo... | 12/14/1999 |
| 5978399 | Electrically-tunable infrared detectors and method based on intraband transitions in quantum well structures A quantum well infrared detector comprised of a quantum well semiconductor structure having two adjacent quantum states. The structure is electrically tunable by photon induced resonant tunneling between the quantum wells. An infrared tunable detector dev... | 11/02/1999 |
| 5949120 | Semiconductor photodetector This semiconductor photodetector includes a photoabsorption layer, an n-type first semiconductor layer, and a p-type second semiconductor layer. The photoabsorption layer comprises an n-type first layer and a p-type second layer formed in contact with the... | 09/07/1999 |
| 5942775 | Photosensing device with improved spectral response and low thermal leakage A photosensing device is provided which has a photojunction structure that includes a junction of a photodiode and a body-junction of a photo-capacitor operating in an inversion mode. The photojunction structure is fabricated with standard complementary M... | 08/24/1999 |
| 5939729 | Optical controlled resonant tunneling diode The present invention relates to a semiconductor photoelectric device including a InAs layer formed to monoatomic thickness sandwiched between spacer layers adjacent to an emitter to maximize a difference in energy between two quantum states in accumulati... | 08/17/1999 |
| 5831277 | III-nitride superlattice structures The subject invention involves the p-type doping of Alx Ga1-x N thin films with a III-nitride composition and specifically a {Alx Ga1-x N/GaN} short-period superlattice structure of less than 5000 Å thickness i... | 11/03/1998 |
| 5600157 | Light-emitting and light-sensing diode array device, and light-emitting and light-sensing diode with improved sensitivity According to a first aspect of the invention, a light-emitting and light-sensing diode has a doped region with a depth not exceeding 2 μm, for adequate sensitivity, and an impurity concentration of at least 5×1020 atoms/cm-3, for a... | 02/04/1997 |
| 5576559 | Heterojunction electron transfer device A smooth and monotonic potential energy gradient was established at a p-type (InGa)As--undopad InP heterojunction to efficiently transfer conduction electrons from the (InGa)As:p layer to the InP:ø layer. This potential energy gradient was established wi... | 11/19/1996 |
| 5525539 | Method for forming a light emitting diode for use as an efficient emitter or detector of light at a common wavelength An infrared LED can function efficiently as both an emitter and a detector at a common wavelength without undesirable characteristics found in avalanche diodes. The LED comprises a graded-bandgap Ga1-x Alx As semiconductor material w... | 06/11/1996 |
| 5449943 | Visible and infrared indium antimonide (INSB) photodetector with non-flashing light receiving surface The light receiving or back-side surface (22) of an indium antimonide (InSb) photodetector device (10) substrate (12) is cleaned to remove all oxides of indium and antimony therefrom. Passivation and/or partially visible light blocking layers (26, 28) are... | 09/12/1995 |
| 5448082 | Light emitting diode for use as an efficient emitter or detector of light at a common wavelength and method for forming the same An infrared LED can function efficiently as both an emitter and a detector at a common wavelength without undesirable characteristics found in avalanche diodes. The LED comprises a graded-bandgap Ga1-x Alx As semiconductor material w... | 09/05/1995 |
| 5345074 | Semiconductor light source A semiconductor light source for transmitting light signals of digital or analog data having a laser diode and a photodiode for monitoring the output power of the laser diode. The driving current of the laser diode is adjusted by the photocurrent of the m... | 09/06/1994 |
| 5345075 | Semiconductor photodetector with dielectric shielding A semiconductor photodetector comprising a photodiode chip, a header for mounting the chip, a receptacle, and a ferrule for holding an end of an optical fiber. The photodetector does without a lens. A dielectric layer covers a periphery of the photodiode ... | 09/06/1994 |
| 5272105 | Method of manufacturing an heteroepitaxial semiconductor structure Heteroepitaxial semiconductor structures of, for example, GaAs on InP or Si. The epitaxially grown GaAs is in the form of individual spaced-apart islands having maximum dimensions in the plane of the surface of the substrate of no greater than 10 micromet... | 12/21/1993 |
| 5214276 | Semiconductor structure for photodetector A photodiode comprises e.g. an n-type semiconductor layer, a p-type semiconductor region selectively formed in a central part from a surface of the n-type semiconductor layer, a dish-like shaped pn-junction therebetween, an annular electrode formed on the... | 05/25/1993 |
| 5187378 | Photodetector A photodetector includes a compound semiconductor substrate including first and second elements and having a first energy band gap, a first conductivity type compound semiconductor light absorbing layer including at least one of the first and second eleme... | 02/16/1993 |
| 5144396 | Capping layer fabrication A planar, p-n junction device has electrical contact made to the active region, the capping layer (4) having been selectively removed through a mask (5, 6). The selective removal of the capping layer may be performed prior to a diffusion step in which the... | 09/01/1992 |
| 5136346 | Photon stimulated variable capacitance effect devices A photon stimulated variable capacitance effect device that yields useful variations in capacitance responsive to changes in intensity of incident photons, while the operating point of the device is maintained near equilibrium.... | 08/04/1992 |
| 5130776 | Ultraviolet-light photodiode An ultraviolet-light sensitive photodiode device comprises a first semiconductor photodiode for producing a first current when illuminated by light and a second semiconductor photodiode for producing a second current when illuminated by light. The first a... | 07/14/1992 |
| 5093589 | Charge injection circuit having impedance conversion means A charge injection circuit for injecting a charge to a signal processing circuit has a photo-voltaic element for generating a photocurrent when an infrared light is received, a field effect transistor used for injecting the charge to the signal processing... | 03/03/1992 |
| 5079616 | Semiconductor structure Heteroepitaxial semiconductor structures of, for example, GaAs on InP or Si. The epitaxially grown GaAs is in the form of individual spaced-apart islands having maximum dimensions in the plane of the surface of the substrate of no greater than 10 micromet... | 01/07/1992 |
| 5049962 | Control of optical crosstalk between adjacent photodetecting regions An array [10] of photodetecting active regions [16] includes a layer of photoresponsive material [14] differentiated into a plurality of photodetecting active regions. The layer has a composition which varies across a thickness of the layer from a first s... | 09/17/1991 |
| 4990990 | Monolithically integrated waveguide-photodiode-FET combination Monolithically integrated waveguide-photodiode-FET combination comprising waveguide layer (2), photodiode layer (3), FET layer (4) and a common cover layer (5) applied on a carrier substrate (1) of III-V semiconductor material, having butt coupling betwee... | 02/05/1991 |
| 4898834 | Open-tube, benign-environment annealing method for compound semiconductors An improved system and method for annealing indium antimonide ion implanted junctions employing an open-tube benign annealing environment. A furnace having a hollow chamber therein is maintained continuously at a predetermined annealing temperature and wa... | 02/06/1990 |
| 4835575 | Monolithically integrated waveguide-photodiode combination A monolithically integrated waveguide-photodiode combination for optical communications systems includes a carrier substrate of n-conductive semiconductor material, a further layer of the same material in whose surface is formed a strip-shaped n-conductiv... | 05/30/1989 |
