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| Number | Title | Issue Date |
| 7372068 | QWIP with electron launcher for reducing dielectric relaxation effect in low background conditions A QWIP structure is disclosed that includes a graded emitter barrier and can further be configured with a blocked superlattice miniband. The graded emitter barrier effectively operates to launch dark electrons into the active quantum well region, thereby improving r... | 05/13/2008 |
| 7368762 | Heterojunction photodiode The present invention provides a heterojunction photodiode which includes a pn or Schottky-barrier junction formed in a first material region having a bandgap energy Eg1. When reverse-biased, the junction creates a depletion region which expands towards a... | 05/06/2008 |
| 7304361 | Inexpensive organic solar cell and method of producing same The present invention proposes an organic photovoltaic component, particularly an organic solar cell, whose electrode is implemented as unstructured and is provided with a passivation layer, so that the passivated electrode layer acts functionally as a structured el... | 12/04/2007 |
| 7259439 | Semiconductor photodetector and its production method In a semiconductor photodetector 1 according to the present invention, flat surfaces of three steps with different heights are formed in a top surface portion of a semi-insulating GaAs substrate 2. An n-type GaAs layer 3, an i-type GaAs layer | 08/21/2007 |
| 7250647 | Asymmetrical transistor for imager device An imager device that has mitigated dark current leakage and punch-through protection. The transistor associated with the photoconversion device is formed with a single (i.e, one-sided) active area extension region on one side of the transistor gate opposite the pho... | 07/31/2007 |
| 7226803 | Photodiode with ultra-shallow junction for high quantum efficiency CMOS image sensor and method of formation A pinned photodiode with an ultra-shallow highly-doped surface layer of a first conductivity type and a method of formation are disclosed. The ultra-shallow highly-doped surface layer has a thickness of about 100 Angstroms to about 500 Angstroms and a dopant concent... | 06/05/2007 |
| 7227246 | Matching circuits on optoelectronic devices An apparatus comprises a first substrate and a second substrate. The first substrate includes an optoelectronic device and a matching circuit. The second substrate includes a driver circuit. A frequency response of the optoelectronic device is changed by the matchin... | 06/05/2007 |
| 7198976 | Solid-state imaging device and method for manufacturing the same Channel stop sections are formed by multiple times of impurity ion implanting processes. Four-layer impurity regions are formed across the depth of a semiconductor substrate (across the depth of the bulk), so that a P-type impurity region is formed deep in the semic... | 04/03/2007 |
| 7161220 | High speed photodiode with a barrier layer for blocking or eliminating slow photonic carriers and method for forming same A structure (and method for forming the structure) includes a photodetector, a substrate formed under the photodetector, and a barrier layer formed over the substrate. The buried barrier layer preferably includes a single or dual p-n junction, or a bubble layer for ... | 01/09/2007 |
| 7151287 | Minimizing the effect of directly converted x-rays in x-ray imagers In one embodiment, an image sensor for an x-ray imager includes a photodiode and a readout circuit. A deep well formed below the readout circuit may be configured as a diode to drain away parasitic electrons, which would otherwise induce noise in images. The parasit... | 12/19/2006 |
| 7102185 | Lightshield architecture for interline transfer image sensors An interline transfer type image sensing device that can be operated at high speed and with low image smear is described. The device incorporates a refractory metal layer which is used for both a light shield over the vertical charge transfer region and as a wiring ... | 09/05/2006 |
| 6693317 | Optical sensor by using tunneling diode A method of fabricating a tunneling photodiode is presented comprised of the following steps: forming a p-well in an n-type substrate, forming a thin insulating layer over the surface of the p-type material, and then forming a thin n-type layer over the i... | 02/17/2004 |
| 6677628 | Pinned floating photoreceptor with active pixel sensor A pinned photodiode is operated without a transfer gate. This is done by forming a pinned photodiode which has a selective connection to the substrate. When the connection is turned on, the photodiode is pinned to the substrate, and kept at a specified po... | 01/13/2004 |
| 6380531 | Wavelength tunable narrow linewidth resonant cavity light detectors A light detector comprising a photodetector disposed within an etalon or microcavity. The light detector is sensitive to light having a wavelength resonant with the etalon. Preferably, the etalon is a solid state microcavity having distributed bragg refle... | 04/30/2002 |
| 6271943 | Wavelength demultiplexing stack photodiode detector with electrical isolation layers A wavelength demultiplexer having at least two pairs of photodetectors is disclosed. The photodetectors are arranged in sequential layers along an optical path and the pairs of photodetectors are separated by a non-optically active insulator interposed be... | 08/07/2001 |
| 6245601 | Photoelectric converter, method for driving photoelectric converter and system having photoelectric converter There is provided a photoelectric converter comprising a photoelectric conversion element of a laminated structure comprising a first electrode layer, an insulation layer for blocking the passage of a first carrier and a second carrier, a photoelectric co... | 06/12/2001 |
| 6163039 | Triangular-barrier optoelectronic switch A GaAs-InGaP triangular-barrier optoelectronic switch (TBOS) is disclosed, wherein two i-InGaP layers are formed on both sides of the p+ -GaAs layer in the conventional triangular-barrier structure. By introducing avalanche multiplication and c... | 12/19/2000 |
| 5965899 | Miniband transport quantum well detector A semiconductor device for detecting radiation includes a plurality of quantum well layers, each of which has bound ground and excited states, interleaved with a plurality of superlattice barrier layers, each of which has a miniband of energy states. By s... | 10/12/1999 |
| 5747861 | Wavelength discriminating photodiode for 1.3/1.55 μm lightwave systems The specification describes a discriminating photodiode for detection of 1.55 μm signals used in wavelength multiplexed systems operating with 1.3 μm and 1.55 μm wavelengths. The device uses a semiconductor layered structure to absorb photons from the ... | 05/05/1998 |
| 5382824 | Integrated circuit with an integrated color-selective photo diode and an amplifier following the photo-diode An integrated circuit includes a photo diode having a first electrically isolated portion of an epitaxial layer of a first conductivity type, a first semiconductor layer of a second conductivity type disposed therein, a second semiconductor layer of the f... | 01/17/1995 |
| 5373186 | Bipolar transistor with monoatomic base layer between emitter and collector layers A semiconductor device consisting of epitaxial material is provided with at least one monoatomic layer of doping atoms, i.e. with a layer which is just one atom thick. A preferred device is a bipolar transistor in which case the Dirac-delta doped p-type l... | 12/13/1994 |
| 5329150 | Semiconductor photodetector devices with pairs of monoatomic layers separated by intrinsic layers A semiconductor light wave detector which has a first layer of a highly doped n-type semiconducting substrate, a second layer of a highly doped n-type semiconducting material, a third layer of a distinct intrinsic semiconducting material and a fourth laye... | 07/12/1994 |
| 5238864 | Method of making solid-state imaging device A method for producing a solid-state imaging device including a photodetector including implanting two different dopant impurity ions, each producing the second conductivity type and having different diffusion coefficients in a first conductivity type sem... | 08/24/1993 |
| 5216260 | Optically bistable semiconductor device with pairs of monoatomic layers separated by intrinsic layers An optically bistable semiconductor device which has a doped or undoped gallium arsenide substrate and a series of alternating n-type and p-type Dirac-delta doped monoatomic layers formed on the substrate. Each Dirac-delta doped monoatomic layer is separa... | 06/01/1993 |
| 5204544 | Photoelectric conversion device with stabilizing electrode A photoelectric conversion device has a semiconductor region for accumulating the carriers generated by photoexcitation which reads the signals according to the accumulated carriers in said semiconductor region. A stabilizing electrode is provided above t... | 04/20/1993 |
| 5198659 | Wide-range multicolor IR detector An IR photodetector including an IR semiconductor detector with conductive layers on opposite, parallel surfaces. A semiconductor substrate supports the semiconductor IR detector. A circuit is connected across the semiconductor IR detector to provide a bi... | 03/30/1993 |
| 5191399 | Solid-state imaging device with improved photodetector A solid-state imaging device includes a photodetector having a first conductivity type semiconductor layer, a second conductivity type semiconductor region in the layer, and a first conductivity type region in the second conductivity type region. The seco... | 03/02/1993 |
| 5164809 | Amorphous silicon radiation detectors Hydrogenated amorphous silicon radiation detector devices having enhanced signal are disclosed. Specifically provided are transversely oriented electrode layers and layered detector configurations of amorphous silicon, the structure of which allow high el... | 11/17/1992 |
| 5160991 | Electromagnetic wave detector and image analyzer comprising a detector of this type The detector can be used to detect a wave in the medium infrared range by controlling the detector through optical pumping by means of a near infrared wave. In this case, the detector has a quantum well structure consisting of alternating first layers and... | 11/03/1992 |
| 5148251 | Photoconductive avalanche GaAs switch An optically activated avalanche GaAs switch having two opposing optical windows for receiving optical energy from an illumination source which may be, for example, a laser diode operating at a 1.06 micron wavelength. The switch is a semiconductor PIN str... | 09/15/1992 |
| 5140381 | Optical detection device with variable detection threshold An optical detection device with a variable detection threshold. The optical detection device comprises at least one element having a heterostructure on a substrate, the heterostructure incorporating two conducting layers and, between the latter, a semico... | 08/18/1992 |
| 5130776 | Ultraviolet-light photodiode An ultraviolet-light sensitive photodiode device comprises a first semiconductor photodiode for producing a first current when illuminated by light and a second semiconductor photodiode for producing a second current when illuminated by light. The first a... | 07/14/1992 |
| 5121181 | Resonant tunneling photodetector for long wavelength applications A long wavelength detector is formed by coupling a highly doped cathode to an anode through an undoped quantum well or superlattice filter structure. The absorption mechanism is free-carrier absorption in a heavily doped direct bandgap semiconductor (the ... | 06/09/1992 |
| 5097121 | Beveled edge impurity band conduction detector An impurity band conduction (IBC) detector having a substrate and a thin layer IR active region is provided with a beveled edge for increasing the quantum efficiency of the detector. The edge of the transparent detector substrate is beveled at an angle eq... | 03/17/1992 |
| 5068524 | Multiple heterostructure photodetector A photodetector (10) of the non-equilibrium kind incorporates three successively disposed sections (14, 16, 18) of like layer construction. Each of the sections (e.g. 14) contains three layers (14A, 14B, 14C) of semiconductor materials of the Cdx | 11/26/1991 |
| 5060234 | Injection laser with at least one pair of monoatomic layers of doping atoms A semiconductor device consisting of epitaxial material is provided with at least one monoatomic layer of doping atoms, i.e. with a layer which is just one atom thick. A particularly preferred device is injection laser in which case the Dirac-delta doped ... | 10/22/1991 |
| 5055901 | Multi-layer metal silicide infrared detector The efficiency of a metal silicide infrared (10) in greatly enhanced by depositing on the substrate (14) a stack (30) of alternating metal silicide (12,24) and silicon layers (22). The metal silicide layers (12,24) are connected to each other and to a con... | 10/08/1991 |
| 5047622 | Long wavelength infrared detector with heterojunction An infrared radiation detector having a first semiconductor layer deposited n a substrate to form a diode junction with an overlay contact, is rendered more effective to detect long wavelength radiation by deposit of a second semiconductor layer between th... | 09/10/1991 |
| 5047090 | Semiconductor device A semiconductor device includes laminated photoelectric conversion elements each having a semiconductor thin film carrying out the photoelectric conversion, the respective semiconductor thin film having a relationship Lࣘ1/(λ) when incident light... | 09/10/1991 |
| 5043785 | Photosensor device photodiode and switch A photosensor device having a semiconductor layer disposed on a substrate. The semiconductor layer includes a lateral photosensor having a semiconductor junction arranged in a serpentine configuration and a lateral read-out switch. The lateral read-out sw... | 08/27/1991 |
