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| Number | Title | Issue Date |
| 7317234 | Means of integrating a microphone in a standard integrated circuit process A means of integrating a microphone on the same integrated circuit die as other electronics in the system is disclosed. The structure uses solder bump technology to form a gap between an electrode on the silicon and another electrode. Charge is stored on the capacit... | 01/08/2008 |
| 7180150 | CMOS image sensor and method for detecting color sensitivity thereof A CMOS image sensor and a method for detecting color sensitivity of red, green and blue light without using a color filter layer is disclosed, which includes a semiconductor substrate having an active region; a photodiode formed in the active region of the semicondu... | 02/20/2007 |
| 7095060 | Unit for driving light-emitting device A unit according to the present invention includes a substrate and an IC chip used for driving a light-emitting device. A relay terminal is provided at a region spaced from peripheral areas of the substrate so as to connect the light-emitting device with the IC chip... | 08/22/2006 |
| 6263124 | Photoconductive switch A photoconductive switch comprises a first layer (1), two contact layers (2, 3) arranged on said first layer and connectable to different potentials for applying a voltage thereacross, said first layer being adapted to be conducting upon applying a voltag... | 07/17/2001 |
| 6252221 | Photo-conductive switch having an improved semiconductor structure A PCS that comprises a photo-conductive layer of NB material sandwiched between a top confinement layer and a bottom confinement layer. Both confinement layers are layers of WB material. NB material and WB material are semiconductor materials. NB material... | 06/26/2001 |
| 6222141 | Irradiation controlled switch A switch comprises at least a first layer of a first material and two contact electrodes arranged on opposite sides of the first layer and connectable to different potentials for applying a voltage thereacross. A first layer is adapted to be conducting up... | 04/24/2001 |
| 6194699 | Photoconductive switch with multiple layers A photoconductive switch comprises a first layer (1) of a first material sandwiches between two contact layers (2,3). The first layer is adapted to be conducting upon applying a voltage across said contact layers when irradiated by light (5) of an energy ... | 02/27/2001 |
| 5912455 | Photoconductor-based electrical switch A photoconductor-based electrical switch comprises an element made of photoconductor material possessing two electrodes located. on either side of an active zone, at least one light source emitting at least one light beam illuminating the active zone, the... | 06/15/1999 |
| 5905272 | Optical receiver Apparatus for optical communications (10, 110, 210) includes a low-temperature grown photoconductor (12, 140, 220) coupled to at least one resonant tunneling device (14, 120, 130, 230, 240). When exposed to an input light, low-temperature grown photocondu... | 05/18/1999 |
| 5864166 | Bistable photoconductive switches particularly suited for frequency-agile, radio-frequency sources A photoconductive switching device is disclosed that has an enhanced speed of response so that its closed (low) and open (high) resistive states are obtained in response to optical illumination in the less than nanosecond regime. The enhanced speed of res... | 01/26/1999 |
| 5844288 | Photoconductive element and method for measuring high frequency signals A photoconductive method or apparatus for measuring high frequency signals using a relatively inexpensive photoconductive material with a relatively long duration or recombination time. The photoconductive method or apparatus utilizes a photoconductive el... | 12/01/1998 |
| 5811841 | Photoconductive switching with thin layer enhanced breakdown charateristics A high voltage high current semiconductor switching device in which the tendency to incur premature electrical breakdown through carrier channels formed slightly below the surface of the semiconductor material is avoided. This avoidance occurs through use... | 09/22/1998 |
| 5808349 | Magnetized photoconductive semiconductor switch A strong magnetic field is applied to a photoconductive semiconductor switch to make the opening time of the switch independent of the recombination time of the photoionized semiconductor. As a result, the switch is capable of shaping current pulses with ... | 09/15/1998 |
| 5804815 | GaAs photoconductive semiconductor switch A high gain, optically triggered, photoconductive semiconductor switch (PCSS) implemented in GaAs as a reverse-biased pin structure with a passivation layer above the intrinsic GaAs substrate in the gap between the two electrodes of the device. The revers... | 09/08/1998 |
| 5773817 | Ultrafast, high voltage pulser using circumferentially illuminated, laser-switched radial transmission line A pulse signal generator apparatus for producing an ultrafast, high-voltage pulser using a circumferentially illuminated, laser-switched radial transmission line transformer. The apparatus includes a radial transmission line transformer having a circular ... | 06/30/1998 |
| 5637862 | Detector for determining the wavelength of an optical signal An optical detector for determining the wavelength of an optical signal iudes a semiconductor material in the path of the optical signal having a bandgap less than the optical signal. A conductive layer is positioned on the semiconductor material and a p... | 06/10/1997 |
| 5629665 | Conducting-polymer bolometer The invention is an apparatus and method for making a polymer bolometer. The apparatus consists of a current supply and current receiving paths affixed to a substrate. Bridging the current supply paths and current receiving paths is an electrically conduc... | 05/13/1997 |
| 5596209 | Photoconductive semiconductor control device The present invention provides a radiant energy activated semiconductor control device having N+ ion implanted regions exposed to the radiant energy for switching purposes.... | 01/21/1997 |
| 5508625 | Voltage stand off characteristics of photoconductor devices The invention provides a way to improve the voltage stand-off characteristics of photoconductors, including both surface and bulk photoconductors. In a preferred embodiment, the invention comprises a photoconductor device having a semiconductor substrate ... | 04/16/1996 |
| 5428226 | Relativistic semiconductor plasma wave frequency up-converter with energized portion A device that frequency up-shifts an impinging electromagnetic wave, facilitating signal pulse compression, consisting of a semiconductor block or waveguide containing an optically induced relativistic plasma wave which interacts with an applied or self g... | 06/27/1995 |
| 5403673 | Functional thin film member A functional thin film member is composed of an insulating substrate; a first single crystal thin film layer which contains at least one atom component of Si or Ge, formed on the insulating substrate; an intermediate layer with a cubic crystal system and ... | 04/04/1995 |
| 5382788 | Monolithic photoconductive bipolar pulsar utilizing a radial transmission line A monolithic photoconductive pulsar utilizing a radial transmission line structure to store energy and a unique optical pulse illumination means to trigger the radial transmission line to radiate extremely, high voltage gain, narrow bipolar pulses. By ach... | 01/17/1995 |
| 5374589 | Process of making a bistable photoconductive component Semi-insulating gallium arsenide wafers manufactured with varying silicon nsity shallow donors are copper compensated by heating to temperature of at least 550° C. to thermally diffuse the copper into the wafers and thereby provide deep copper acceptors ... | 12/20/1994 |
| 5332911 | Semiconductor component with adiabatic transport in edge channels A semiconductor radiation detector with layer-wise construction and a contive region having a two-dimensional or quasi one-dimensional electron or hole gas is provided in which adiabatic transport in edge channels occurs at least regionally and in which ... | 07/26/1994 |
| 5323024 | Relativistic semiconductor plasma wave frequency up-converter A device that frequency up-shifts an impinging electromagnetic wave, facilitating signal pulse compression, consisting of a semiconductor block or waveguide with an optically-induced relativistic plasma wave which interacts with an applied or self generat... | 06/21/1994 |
| 5309132 | Technique for trimming photoresistors and trimmed photoresistors A technique for trimming photoresistors to change relatively high tolerance parts to relatively low tolerance parts by blocking out a portion of the photoactive area, and the so-trimmed photoresistors. The blocking out can be performed by placing ink over... | 05/03/1994 |
| 5293037 | Opto-electronic converter with electron mirrors and quantum wire An opto-electronic converter comprises a mesoscopic resonant cavity constituted by a quantum wire made of a material that is a conductor or a semiconductor and situated between two electron mirrors of nanometer size, the said wire being interrupted over a... | 03/08/1994 |
| 5285068 | Photo-detector and photo-detection method using the same A photo-detector for detecting a light having a predetermined photon energy, comprises: a semiconductor member having a source region, a gate region and a drain region; a first path for propagating an electron wave from the source region to the drain regi... | 02/08/1994 |
| 5262657 | Optically activated wafer-scale pulser with AlGaAs epitaxial layer A device for generating pulses of radio frequency energy in response to pulses of laser light in which a circular wafer of GaAs has metallized annular layers ohmically bonded to the wafer by epitaxial GaAs layers, and an epitaxial layer of AlGaAs in the c... | 11/16/1993 |
| 5170238 | Switching element with organic insulative region A switching element is disclosed which comprises an element comprising two electrodes and an organic insulative region interposed between said two electrodes. The element has a memory property and is capable of being switched between different resistance ... | 12/08/1992 |
| 5140398 | Switching device A switching device is provided which comprises a pair of electrodes, and a insulating zone and a conductive or semiconductive zone that are provided between said electrodes. Another switching device is also provided which comprises a pair of electrodes, a... | 08/18/1992 |
| 5139913 | Photosensor having a monomolecular membranes of squarylium pigment A photosensor having a photoconductive layer made of built-up monomelecular membranes containing a squarylium pigment represented by the formula (I): ##STR1## wherein R1, R2, R3 and R4, which may be the same or ... | 08/18/1992 |
| 4843446 | Superconducting photodetector A photodetector which operates at a cryogenic temperature by utilizing superconductivity is disclosed. A plurality of mutually spaced-apart superconducting layers are formed in such a manner as to be in contact with a semiconductor layer at least one of t... | 06/27/1989 |
| 4782227 | Image sensor with memory Image sensor with memory and, more especially, image sensor with reading by thermal effect. This sensor comprises mainly a layer of a photoconductive material and a layer of a transparent material, the impedance of which varies with the temperature, these... | 11/01/1988 |
| 4754130 | Method and means for detecting optically transmitted signals and establishing optical interference pattern between electrodes A photodetector for detecting signal pulses transmitted in an optical carrier signal relies on the generation of electron-hole pairs and the diffusion of the generated electrons and holes to the electrodes on the surface of the semiconductor detector body... | 06/28/1988 |
| 4727349 | Depleted channel photoconductor Photoconductors with channels that lie in the surface depleted region of a GaAs structure are described. These devices have nanoampere bias current, and exhibit photoconductive gain. In contrast to other photoconductors, their low frequency responsivity i... | 02/23/1988 |
| 4695733 | Photoconductive power switch A photoconductive power switch capable of producing electrical pulses of at least 10 amperes and 100 volts at switching speeds of one nanosecond or less is disclosed. The photoconductive power switch comprises a wafer of high resistivity semiconductor mat... | 09/22/1987 |
| 4693599 | Apparatus for measuring light beam characteristics The spatial or temporal characteristic of a beam of light or other electromagnetic radiation or a beam of sub-atomic particles is measured by an array of detectors. The array comprises the layer 1 of photosensitive material on which there are positioned p... | 09/15/1987 |
| 4678732 | Method for manufacture of photo-semiconductor A photo-semiconductor is produced by melting Bi2 O3 or its mixture with a small amount of an oxide or fluoride and then quenching the resultant melt in the form of a film.... | 07/07/1987 |
| 4672578 | Method of information recording on a semiconductor wafer An information recording method is provided, in which a p- or n-type semiconductor wafer is irradiated with an energetic particle beam such as an electron beam thereby to control, e.g., decreased or increased generation of the surface photovoltage at the ... | 06/09/1987 |
